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Boosting computational thermodynamic analysis of the CVD of SiC coating via machine learning J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-27 Bingquan Xu, Wei Huang, Junjun Wang, Song Zhang, Zhigang Xu, Rong Tu, Wenjun Li, Jian Peng, Chuanbin Wang
Although thermodynamic analysis provides the possibility to perform a full-range study on the chemical vapor deposition (CVD) of SiC, billions of calculations are required to achieve a high-resolution study for such a high-dimensional space. Similar issues are also encountered for other materials modeling and simulation techniques. Therefore, using the database from the thermodynamic analysis of CVD
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Optimal operating conditions for the rapid growth of KH2PO4 crystal by numerical simulation J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-27 Jianyu Bai, Mingxia Xu, Baoan Liu, Lisong Zhang, Hongkai Ren, Guokai Hao, Xiangxu Chai, Xun Sun, Shenglai Wang
Numerical simulations of the turbulent hydrodynamics and concentration in the rapid growth of potassium dihydrogen phosphate (KHPO or KDP) crystals have been performed. In this work, a quadratic power-law growth model is applied, concerning the mass transfer occurring at the crystal surface during the growth process under low supersaturations. The mass transfer boundary condition is discretized by
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Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-26 Guangyu Zheng, Yukang Sun, Hong Zhang, Peng Su, Ran Zuo, Lijun Liu
Numerical study on the influence of the carrier gas (H and N), V/III ratio, inlet temperature, and pressure on gas reaction path and growth rate of indium nitride (InN) thin film in metal–organic chemical vapor deposition (MOCVD) with close-coupled showerhead (CCS) reactor was conducted. It was found that the concentrations of precursor for InN film and nanoparticle determine the growth rate and gas
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Semi-insulating [formula omitted]-Ga2O3 single crystals through vanadium doping: Growth, Optical and Terahertz characterization J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-25 Maneesha Narayanan, Ajinkya Punjal, Emroj Hossain, Shraddha Choudhary, Ruta Kulkarni, S.S. Prabhu, Arumugam Thamizhavel, Arnab Bhattacharya
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Molecular insights into quercetin-enhanced crystalline silver nanoparticles: Implications for breast cancer cell cytotoxicity and antibacterial action in Kyllinga nemoralis J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-23 M. Amalin Sobi, M.R. Bindhu, D. Usha, Rajakrishnan Rajagopal, Ahmed Alfarhan, Selvaraj Arokiyaraj, M. Umadevi
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Mixed surfactant assisted synthesis of single-crystal Ni2P hollow spheres with excellent adsorption performance J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-23 Yang Lin, Xiaojun Li, Shuling Liu, Jianbo Tong
The single-crystal NiP hollow spheres have been synthesized via a solvothermal route in presence of mixed surfactant. It is showed that solvent played a significant role for the synthesis of NiP. Furthermore, the structure of hollow spheres would be obtained only using the mixtures of cetyltrimethyl ammonium bromide (CTAB) and sodium dodecyl benzene sulfonate (SDBS) which act as soft template rather
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Growth of InGaSb/AlInGaSb quantum cascade laser structures on GaSb substrates by molecular beam epitaxy J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-22 Hiroaki Yasuda, Norihiko Sekine, Iwao Hosako
An InGaSb/AlInGaSb terahertz quantum cascade laser (THz-QCL) structure was grown by molecular beam epitaxy (MBE) on a GaSb substrate with introducing an InGaSb composition graded buffer layer. It was found that the occurrence of inverted pyramid-shaped defects with a size of several micrometers is related to oxygen. The lattice matching condition between InGaSb and AlInGaSb was investigated. We grew
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Effects of rare earth codoping on the optical and scintillation properties of Cs3Cu2I5:Tl single crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-20 Qiang Gao, Qian Wang, Wen Li, Aiqing Gao, Mikhail Korzhik, Shunsuke Kurosawa, Guohao Ren, Yuntao Wu
In this work, the effects of rare earth ion codoping on the optical and scintillation performance of CsCuI:Tl single crystals were studied. CsCuI:Tl single crystals codoped with different concentrations of Sc, Y, and La ions were grown by the Bridgman method. It was found that rare earth ion codoping reduces the optical transmittance of the as-grown crystals, in particular the coloring caused by Sccodoping
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Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-18 M. Förste, T. Schneider, P. Fischer, C. Röder, O. Pätzold, D. Rafaja, A. Charitos
Structural quality of GaN layers grown on foreign substrates is usually improved by applying masks or interlayers, which interact with the crystal structure defects, mainly with threading dislocations, and consequently reduce their density. In this work, GaN interlayers with intrinsic defect structures were employed as barriers impeding the propagation of threading dislocations. The GaN samples were
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Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 1. Temperature measurements J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-16 Michio Kida, Toshinori Taishi
Relation between temperature distribution in a crucible and size of poly-silicon chunks is investigated in a melting process of silicon Czochralski (CZ) method. Five kinds of feedstocks with a different size are heated up to about 1,000 °C in a crucible and the temperature distributions and thermal gradients are measured with six thermocouples. Two sizes of commercial poly-silicon chunks and three
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Effective thermal conductivity of poly-silicon chunks and its size dependence in a melting process of silicon Czochralski crystal growth: Part 2. Numerical simulations and comparison with measurements J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-16 Michio Kida, Toshinori Taishi
In the article Part 1, experimental relation of a temperature distribution and a poly-silicon size in a melting process of silicon Czochralski (CZ) method is investigated. In this work, numerical simulations are performed to obtain temperature distributions in a crucible of a silicon CZ melting process. And applicability of International Atomic Energy Agency (IAEA) formula of effective thermal conductivity
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Rapid formation of imidazolium glutarate (IMGA) compound and investigation of its single crystal growth by modified vertical Bridgman technique for optical limiting applications J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-16 Mohamad Asikali Abdul Hakkim, Rajesh Paulraj
In this paper, we have examined the formation of the imidazole glutarate adduct by protonation-deprotonation between imidazole and glutaric acid using a direct precipitation method within a short period. Following that, we have succeeded in growing imidazolium glutarate (IMGA) single crystaldirectly from synthesized material and we have also grown IMGA single crystal from the melt methodusing the vertical
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Pinning/depinning dynamics of trijunction lines during faceted/nonfaceted eutectic growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-14 S. Mohagheghi, M. Şerefoğlu, S. Akamatsu, S. Bottin-Rousseau
We present an in situ experimental study of decoupled- and coupled-growth patterns in a binary faceted/ nonfaceted (f/nf) eutectic alloy. Real-time optical observation is carried out at low growth velocity () during directional solidification of the transparent AminoMethylPropaneDiol-Succinonitrile (AMPD-SCN) eutectic in thin samples. On a large scale, the two-phase growth front mostly exhibits irregularly
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Study on the facet effect in LEC-GaSb single crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-14 Weimin Dong, Jun Jiang, Qianwen Peng, Chengao Liu, Deliang Chu, Biwen Duan, Henghao Feng, Jin Yang, Wei Guo, Jincheng Kong, Jun Zhao
The “facet effect” had an important impact on the growth and quality of III-V semiconductor crystals. Herein, Te-doped 〈111〉 and 〈100〉 GaSb single crystals were grown by the liquid-encapsulated Czochralski (LEC) method. The theoretical causes of the central facets of 〈111〉 GaSb and the edge facets of 〈100〉 GaSb were studied in detail. The Te component segregation, electrical parameter changes, infrared
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Design engineering of non-linear graded InAlAs metamorphic buffer layers for efficient reduction of misfit dislocation density J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-12 M.Yu. Chernov, N.D. Prasolov, S.V. Ivanov, V.A. Solov'ev
Metamorphic InAlAs ( > 0.75) buffer layer (MBL) grown on GaAs with an optimized non-linear graded composition profile along the growth direction is proposed for enhanced reduction of misfit dislocation (MD) density in highly mismatched III-V/GaAs metamorphic heterostructures. The equilibrium distributions of MD density throughout such InAlAs/GaAs MBLs are calculated. The influence of the initial composition
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Investigation of heat transfer mechanism affecting temperature homogeneity at polysilicon rods in a Siemens reduction furnace J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-08 Wei Si, Ning Wang, Yuan Zong, Gance Dai, Ling Zhao, Zhong Xin, Guangjing Jiang
The temperature homogeneity at polysilicon rods significantly affects the uniformity growth of the polysilicon rod and the product quality in reduction furnace. The heat transfer phenomena on the rod surface includes electric heating, radiation heat transfer, convection heat transfer, heat conduction and reaction heat. In this paper, a representative configuration (RC) of heat transfer model was selected
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Evaluation of defect density in bulk gallium nitrides by photothermal deflection spectroscopy and steady-state photocapacitance methods J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-06 Masatomo Sumiya, Hajime Fujikura, Yoshitaka Nakano, Shuhei Yashiro, Yasuo Koide, Tohru Honda
Bulk GaN samples were characterized by both photothermal deflection spectroscopy (PDS) and steady-state photocapacitance (SSPC) methods. The PDS signal intensity in the bandgap was found to correlate quantitatively with the defect density estimated by the SSPC method. The defect density of GaN bulks fabricated by hydride vapor phase epitaxy (HVPE) was decreased by controlling the incorporation of carbon
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Growth and characterization of 6LiI:Ag crystal scintillators for thermal and epithermal neutron detection on the lunar surface J. Cryst. Growth (IF 1.8) Pub Date : 2024-04-03 Nguyen Duy Quang, Phan Quoc Vuong, Nguyen Thanh Luan, Lam Tan Truc, Nguyen Duc Ton, S.C. Kang, Hwanbae Park, Uk-Won Nam, Won-Kee Park, Jongdae Sohn, Young-Jun Choi, Sukwon Youn, Sung-Joon Ye, Sunghwan Kim, Hongjoo Kim
This paper discusses crystal growth and characterization of 1.0-inch LiI:Ag scintillators for thermal and epithermal neutron detection on the lunar surface as part of the Lunar Vehicle Radiation Dosimeter project. Zone purification method was employed to purify the raw material of LiI, and the crystals were grown using the Bridgman method. X-ray luminescence spectrum was measured to confirm the presence
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Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-31 Kazuma Eto, Takeshi Mitani, Kenji Momose, Tomohisa Kato
The propagation behaviour of threading screw dislocations (TSDs) during 4H-SiC crystal growth using high-off-angle seeds was investigated. By studying the conversion ratio of TSD to basal plane defects during physical vapour transport (PVT) growth and hybrid growth (combination of solution growth and PVT growth) on various off-angle seeds, we suggest an energy diagram showing the off-angle dependence
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Enhanced photocatalytic hydrogen production using TiO2 nanoflower photocatalysts loaded with Zn-Cu-In-Se quantum dots J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-30 Mengyao Geng, Shichang Yuan, Li Wang, Yecheng Zou, Jing Zhang, Tong Zhao, Yulong Cui, Meiling Sun, Guangchao Yin
Herein, a unique Zn-Cu-In-Se@TiO (ZCIS@TiO) composite photocatalyst was constructed by incorporating the narrow-band-gap and zero-dimensional (0D) ZCIS quantum dots (QDs) on the surface of three-dimensional (3D) TiO nanoflowers. The 3D TiO nanoflowers with highly exposed high-energy {001} facets possess the abundant specific surface area and active sites, which are conducive to the efficient loading
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Ultrasonic cavitation-modulated nanocrystal facets growth of zinc-based oxide J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-30 Wencan Wang, Yupu Zhang, Ruowen Zhao, Fang Chen, Wei Zhai
In this study, in situ detection of the transient cavitation intensity during the sonochemical synthesis of Zinc-based Oxide (ZBO) is realized. At a fixed ethanol/water ratio of 25%, the transient cavitation intensity initially increases to a certain level during the nucleation stage of ZBO since the growth units of ZBO serve as supplementary induction sites for transient cavitation bubbles. Once the
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Synthesis and characterization of monodispersed uniform-size aromatic thiolate-protected cobalt nanoclusters for antibacterial and dye degradation studies J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-29 M. Ramadurai, R. Kirubhakaran, S. Chitra, Ali Saheb, M. Suresh, Vinayagam Mohanavel, Palanivel Velmurugan, Subbaiah Suresh Kumar, Arunachalam Chinnathambi, Sulaiman Ali Alharbi, Nagaraj Basavegowda
In this work, we successfully synthesized monodispersed uniform-sized nanoclusters of less than 7 nm using a dual solvent interaction effect based on nanoclusters formation and growth of thiol-protected (TP) stabilized cobalt nanoclusters (CoNCs) mechanism. The spherical morphology synthesized nanoclusters was confirmed by high-resolution transmission electron microscopy (HRTEM) microscopy. The X-Ray
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Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-27 Miki Watanabe, Yutaka Anzai, Isao Tanaka
TbGaO (TGG) single crystals, which are used as optical isolators, are grown by the Czochralski (Cz) method. Radial stripes are sometimes observed inside the TGG-grown single crystals. Polarized light microscopy, chemical etching, and X-ray topography results suggest that helical dislocations are present in crystals with radial stripes. Therefore, the radial stripes are considered to be caused by light
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Growth, optical and thermal properties of YbxHo1-xCa4O(BO3)3 crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-27 Tuanjie Liang, Linwen Jiang, Zhigang Sun, Chen Yang, Huiyu Qian, Tao Zhao, Lei Ai, Yanqing Zheng
YbHoCaO(BO) (Yb:HoCOB, x = 0, 0.1, 0.2, 0.3) crystals were grown by the Bridgman method for the first time. The crystal structure, rocking curve, transmission spectra, absorption spectra, band structure and thermal properties of Yb:HoCOB were characterized in detail. The maximum half peak width (FMHW) of YbHoCOB and YbHoCOB is 26.7″ and 23.8″, respectively, and the effective segregation coefficient
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Formation mechanism of two-dimensional hexagonal silica on SiO2/Si substrate J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-26 Nuzhat Maisha, Olugbenga Ogunbiyi, Guanhui Gao, Mingyuan Sun, Alexander Puretzky, Bo Li, Yingchao Yang
Owing to their remarkable electronic properties, silica ultrathin films have been utilized as an insulating layer in nanoelectronics systems. Silica films have been epitaxially grown on different substrates using various synthesis methods. Among all fabrication approaches, chemical vapor deposition has long been an advanced method for synthesizing two-dimensional (2D) materials due to its ability to
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Gas effects on horizontal ribbon growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-22 Nojan Bagheri-Sadeghi, Brian T. Helenbrook
Three-phase (solid, melt, and gas) and two-phase (solid and melt) models of horizontal ribbon growth were compared to identify the significance of different gas effects. The boundary conditions at the melt–gas and solid–gas interfaces for two-phase simulations were obtained from decoupled simulations of the gas phase. The results showed that the gas shear stress strongly changes the flow and temperature
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Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-22 Ning Gu, Junwei Yang, Jikang Jian, Huaping Song, Xiaolong Chen
Short Step-Bunching (SSB) are a kind of linear defects consisting of convex and concave undulations on the surface of 4H-SiC homoepitaxial layer. In this work, we report the characterizations of SSBs on 12 μm, 50 μm and 85 μm thick SiC epilayers by using optical microscopy (OM), micro-photoluminescence spectra (PL), atomic force microscopy (AFM), chemical mechanical polishing (CMP), molten KOH etching
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Optical properties of pure and Sn-doped β-Ga2O3 single crystals grown by optical float zone technique J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-21 P. Vijayakumar, D. Joseph Daniel, M. Suganya, Nguyen Duy Quang, H.J. Kim
High-quality single crystals of both pure and Sn:β-GaO single crystals weregrown using the optical floating zone technique and a comprehensive study of its luminescence and scintillation properties was carried out. The pure and Sn:β-GaO grown crystals were oriented along (100) by Laue diffraction pattern and its monoclinic structure was confirmed using a single crystal XRD. X-ray induced luminescence
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Crystal growth, structure, spectral and thermal properties of ScxY1-xCOB single crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-21 Yafei Qin, Chengkai Ren, Xiaoniu Tu, Haikuan Kong, Liming Shen, Ningzhong Bao, Jun Chen, Erwei Shi
Yttrium calcium oxyborate (YCOB) crystals are excellent nonlinear optical crystals. To enhance the thermal properties of YCOB crystal, Sc-doped YCOB crystals, denoted as ScYCaO(BO) (x = 0.1 and 0.2) were grown using the Czochralski method along the -direction. Various measurements, including X-ray powder diffraction, rocking curve analysis, inductively coupled plasma-optical emission spectroscopy (ICP-OES)
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Design and characterization of type-II superlattice-based InAs/AlSb/GaSb detector structure J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-20 Kürşat Kızılkaya, Mustafa Kemal Öztürk, Mustafa Hoştut, Yüksel Ergün, Süleyman Özçelik
In this study, N-Structured based InAs/AlSb/GaSb Type-II Superlattice pbin type detector structures are investigated. These systems make absorption in the infrared region in the electromagnetic spectrum as detectors. Structural characterization of these systems is aimed. n-type GaSb is used as the substrate. InAs/AlSb/GaSb-based repetitive SL layers are formed as n-layer, i-layer, p-layer, and p-contact
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Growth of β-Ga2O3 crystal with a diameter of 30 mm by laser-diode-heated floating zone (LDFZ) method J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-18 T. Ito, Y. Tomioka, F. Rackerseder, M. Traub, D. Hoffmann
To investigate the effect of high-power laser heating on the floating zone (FZ) method, a crystal of β-GaO was grown by the LDFZ method using a newly developed optical system equipped with a 20-kW laser diode (LD) system as a heat source. The growth started from a twin-free seed crystal with a diameter of 7 mm and the diameter of the crystal was increased gradually up to 30 mm. With increasing the
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High temperature solution phase diagram of lead zirconate titanate J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-16 Vincent J. Fratello, Song Won Ko
Lead zirconate titanate (PZT) of composition Pb(ZrTi)O is a non-congruently melting material, so crystal growth must be done from a high temperature solution. An understanding of the high temperature solution phase diagram is necessary to make this possible. A variety of solvent systems and solvent properties were evaluated for the growth of PZT, and two innovative lead oxide-phosphate solvents were
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Advancements in Iso-Diameter seeded growth of CdZnTe crystals: A numerical modeling approach and applications in liquid phase Epitaxy J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-13 Chao Xu, Juan Zhang, Changhe Zhou, Shangshu Li, Ruiyun Sun
CdZnTe (CZT) is the preferred material for HgCdTe (MCT) infrared detectors and room temperature nuclear-radiation detector applications. However, their widespread application is hindered by the low yield, attributed to intrinsic thermophysical properties like extremely low thermal conductivity and stacking fault energy, complicating the growth of large-volume crystals. Based on steady-state computer
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Growth and magnetocaloric effect of Na2Gd2(BO3)2O crystal J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-12 Yuwei Chen, Wang Liu, Zuhua Chen, Zhenxing Li, Jun Shen, Heng Tu, Guochun Zhang
High-quality NaGd(BO)O crystals have been successfully grown using the top-seeded solution growth method (TSSG), employing a NaO - NaF - BO flux system with optimal molar ratios of NaGd(BO)O : NaCO : NaF : HBO = 1:2:6:4. The magnetic and magnetocaloric properties were investigated including magnetic susceptibility (), magnetization (), and isothermal magnetic entropy change () measurements. NaGd(BO)O
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Synthesis and phase transformation study of nanostructured manganese oxide polymorphs J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-08 Abdelmalik Zemieche, Loubna Chetibi, Djamel Hamana, Slimane Achour, Gioele Pagot, Vito Di Noto
This paper presents the green synthesis of manganese oxide nanoparticles using olive leaf extract (OLE). The extract functions as both a reducing agent, responsible for converting manganese ions into nanoparticles, and a capping agent, aiding in stabilizing the formed nanoparticles. Our focus lies on investigating the thermal stability, phase transformation, and decomposition temperatures of different
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Preparation, characterization, and antibacterial activity of Ni, Sn co-doped ZnO nanoparticles: Effect of Sn doping concentration J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-08 L.Bruno Chandrasekar, M.Divya Gnaneswari, A.Murugeswari, P.Shunmuga Sundaram, N.Ananthan, M.Karunakaran
Ni, Sn co-doped ZnO nanoparticles have been prepared by chemical method at room temperature. The effects of Sn on the structural, morphological, optical, electrical, and anti-microbial properties of the prepared nanoparticles have been evaluated and discussed. The crystallite size and the unit cell properties have been influenced by the doping concentration of Sn. The addition of Sn enhances the texture
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Dissolution‑recrystallization growth and structural characteristics of facile decomposition-processed NiFe2O4 octahedrons J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-06 Pimjai Saengkwamsawang, Panuwat Katekaew, Arrak Klinbumrung
In this paper, NiFeO powders were prepared by a thermal decomposition process with various temperatures. The structural characteristic and intrinsic defect were characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet–visible (UV–vis) spectroscopy, and photoluminescence (PL). The morphology was investigated by scanning electron microscope (SEM) and transmission
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Conversion of silicon wafer type from perfect-interstitial to perfect-vacancy by rapid thermal process J. Cryst. Growth (IF 1.8) Pub Date : 2024-03-05 Armando Giannattasio
Vacancies, self-interstitials, and Frenkel pairs represent the basic point defects in silicon single-crystals and are unavoidably introduced in the ingots during the manufacturing process. In semiconductor technology, several problems are caused by points defects that are not at thermodynamic equilibrium. For this reason, virtually defect-free silicon wafers having a small residual concentration of
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The effect of Te solution volume on the growth of CdZnTe crystals by Traveling Heater Method J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 Jijun Zhang, Yongwu Qi, Wanping Liu, Jiongjiong Wei, Hao Liu, Xiaoyan Liang, Linjun Wang
Nowadays, Traveling Heater Method (THM) is demonstrated to be one of the most promising ways to grow high-quality CdZnTe (CZT) crystals. The THM is essentially a melt-solution growth method, in which the CZT solute diffuses from the dissolution interface to the growth interface in the Te solution and deposits on the CZT seed. In this work, the effects of Te solution volumes on the structure of CZT
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Corrigendum to “A complete comprehension of InGaAs capping layer deposition on InAs quantum dots by comparison of simulations, luminescence and X-ray diffraction” [J. Cryst. Growth 629 (2024) 127516] J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 S, u, r, y, a, n, s, h, , D, o, n, g, r, e
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Single crystalline high-purity germanium bars grown by the zone-refining technique J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-29 Kevin-P. Gradwohl, Alexander Gybin, Christo Guguschev, Albert Kwasniewski, Mike Pietsch, Uta Juda, Carsten Richter, R. Radhakrishnan Sumathi
A novel low-temperature-gradient zone-refining setup is presented here which allows for single crystalline zone-refining of high-purity Ge. The reported single crystalline zone-refined Ge bar has a length of 680 mm and shows a high structural quality, as confirmed by X-ray diffraction techniques. The dislocation density determined by an etch pit density analysis lies between 10 and 10 cm. The Ge bar
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Hydrothermally grown pure and Er-doped ZnS nanocrystals based flexible piezoelectric nanogenerator for energy harvesting and sensing applications J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-27 Puneet Sagar, Nidhi Sinha, Binay Kumar
Pure zinc sulphide (ZnS) and Er-doped ZnS nanocrystals were grown by hydrothermal method at low temperature. Powder XRD analysis reveals the formation of wurtzite hexagonal phase structure for both pure and Er-doped ZnS samples. Morphology of 2D nanocrystals for both pure and doped ZnS nanocrystals was confirmed by FESEM technique. Presence of Er element in Er-doped ZnS was confirmed by energy-dispersive
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Role of carbon in n-type bulk GaN crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 M. Amilusik, M. Zajac, M. Fijalkowski, M. Iwinska, T. Sochacki, D. Wlodarczyk, A.K. Somakumar, R. Jakiela, A. Suchocki, M. Bockowski
In this work co-doping with silicon and carbon in gallium nitride grown by halide vapor phase epitaxy was performed. Native seeds of high structural quality with bowing radii of (0001) crystallographic planes higher than 15 m and threading dislocation density on the order of 5 × 10 cm were used. The crystallized material was examined in terms of structural, optical, and electrical properties. For this
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Structural and resistivity properties of Fe1-xCoxSe single crystals grown by the molten salt method J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 Qiaoyu Wang, Mingwei Ma, Binbin Ruan, Menghu Zhou, Yadong Gu, Qingsong Yang, Lewei Chen, Yunqing Shi, Junkun Yi, Genfu Chen, Zhian Ren
A series of tetragonal FeCoSe single crystals with a complete Co doping range (0 ≤ x ≤ 0.52) up to its solid solubility limit in FeSe have been grown by an eutectic AlCl/KCl molten salt method. The typical lateral size of as-grown FeCoSe single crystals is 1–5 mm. The chemical composition and homogeneity of the crystals was examined by both inductively coupled plasma atomic emission spectroscopy and
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Characteristics of high-order silane based Si and SiGe epitaxial growth under 600 ℃ J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-24 Dongmin Yoon, Hyerin Shin, Seokmin Oh, Chunghee Jo, Kiseok Lee, Seonwoong Jung, Dae-Hong Ko
Low temperature Si and SiGe epitaxy have been crucial in the semiconductor industry, prompting interest in high-order silanes as Si precursors. In this study, we investigated the growth characteristics of Si and SiGe epitaxial layers using SiH, SiH, and SiH precursors by ultra-high vacuum chemical vapor deposition at temperatures between 500℃ and 600 ℃. We examined the effects of each precursor on
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Cationic order-related magnetoresistivity and half-metallicity in bulk Pb2FeMoO6 grown by high pressure synthesis J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-23 Chiara Coppi, Riccardo Cabassi, Francesco Mezzadri, Massimo Solzi, Francesco Cugini, Edmondo Gilioli, Davide Delmonte
We investigate the electric properties of PbFeMoO (PFMO), a double perovskite that can be grown in a bulk pure phase only via High Pressure/High Temperature solid-state reaction. The as-obtained PFMO is characterized by a high degree of cationic ordering at the B site between Fe and Mo and a ferrimagnetic transition with T around 275 K. A semi-metallic to half-metallic transition seems to occur when
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Optimized InGaAs growth on GaP/Si(1 0 0) templates with different low-temperature layers J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-22 Huyin Zhao, Xuefei Li, Yingchun Zhao, Ming Tan, Wenxian Yang, Tieshi Wei, Shulong Lu
In this paper, the effect of low-temperature buffer layer on the quality of InGaAs grown on GaP/Si templates is investigated. Three different materials, InP, GaAs/InAs and InAs/InP, were grown on GaP/Si templates by molecular beam epitaxy (MBE). The interfacial states between the above materials and the GaP layer were calculated using first principles methods. It was found that the interfacial structure
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Monte Carlo simulation of planar GaAs nanowire growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-21 A.A. Spirina, N.L. Shwartz
The Monte Carlo model for the planar GaAs nanowire growth via the vapor–liquid-solid mechanism on GaAs substrate using a gallium droplet as a catalyst is realized. The effect of temperature, Ga and As deposition rates, substrate orientation and surface properties on the morphology of planar GaAs nanowires is considered. It is shown, that at the initial stages of nanowire growth, a 3D GaAs crystal is
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Numerical simulation of flow and mass transfer during the process of large-sized cuboid KDP crystals grown by the LSLM J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-20 Hang Liu, Yi Xiao, Binbin Lin, Duanyang Chen, Hongji Qi
The growth of high-quality large-sized KDP crystals is to meet the requirements of high-power laser systems. The convective transport characteristics of KDP solution are one of the key factors affecting the growth of large-sized KDP crystals in the growth vessel. In this work, the three-dimensional simulation of flow and mass transfer occurring in the process of large-sized cuboid potassium dihydrogen
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Recent advances of rare earth iron garnet magneto-optical single crystals J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-16 Hui Shen, Yu Zhao, Leifan Li, Qixin Li, Heyan Geng, Yasheng Li, Xuanbing Shen, Jiayue Xu, Ding Zhou, Tian Tian, Yunfeng Ma, Jiamin Shang, Anhua Wu
RFeO (RIG) crystals are the most desirable elements for magneto-optical isolators in the near-infrared (NIR) to mid-infrared (MIR) region, with ever-growing demands for optical fiber communication and high-power laser system. Now, this system is the only commercialized Faraday rotator for optical isolators in 5G wireless communications. However, the growth of high-quality bulk RIG single crystals has
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Exploring 2D materials by high pressure synthesis: hBN, Mg-hBN, b-P, b-AsP, and GeAs J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 N.D. Zhigadlo
In materials science, selecting the right synthesis technique for specific compounds is one of the most important steps. High-pressure conditions have a significant effect on the crystal growth processes, leading to the creation of unique structures and properties that usually are not possible under normal conditions. The prime objective of this article is to illustrate the benefits of using high-pressure
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Advanced Cd1-xMnxTe:Fe2+ semiconductor crystals for IR applications: The role of the composition and sin-band redshift spectra effect J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 Sergei V. Naydenov, Oleksii K. Kapustnyk, Igor M. Pritula, Nazar O. Kovalenko, Igor S. Terzin, Dmitro S. Sofronov, Pavel V. Mateichenko
Doped semiconductor crystals of solid solution CdMnTe:Fe were grown by the high-pressure Bridgman method, covering the range of their existence as a zinc blende structure (0 < < 0.76). The concentration of the Fe impurities was approximately 10 wt% in all the studied samples. The structural and optical properties of the crystals were investigated, including the case of high concentrations of > 0.4
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Recovery of lithium from Li-ion battery leachate by gas-liquid precipitation J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-15 L.E. Ramírez Velázquez, Laëtitia Palos, Marie Le Page Mostefa, Hervé Muhr
Today Li-ion battery recycling processes allow the recovery of heavy metal elements such as copper, cobalt, nickel and manganese. On the other hand, lithium is generally lost in slag or released to the environment and therefore is not recovered. Lithium is an element non-substitutable of Li-ion batteries which technology is indispensable in electromobility and energy transition. Moreover, since 2020
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Crystallization of ferritin on biocompatible Surfaces – Bare Ti and Ti covered by polypyrrole (PPy) J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-10 Daniela S. Tsekova, Vasil Karastoyanov, Daniel Peychev, Ivonka Valova
The purpose of this study was to examine crystallization of ferritin on some biocompatible materials, like bare Ti, and Ti substrate covered by polypyrrole (PPy) through electrochemical polymerization.
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Non-reversibility of crystal growth and Dissolution: Nanoscale direct observations and kinetics of transition through the saturation point J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-09 Natalia N. Piskunova
Atomic force microscopy experiments with modelling nature-like factors affecting crystal-genetic processes registered phenomena accompanying continuous transition from dissolution to growth (through the saturation point) on one and the same defect in a molecular hydroxymethylquinoxalinedioxide (CHNO) crystal. The conducted analysis of the mechanisms of attachment/detachment of the matter to the crystal
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Low-defect-density SnSe2 films nucleated via thin layer crystallization J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 S.A. Ponomarev, K.E. Zakhozhev, D.I. Rogilo, A.K. Gutakovsky, N.N. Kurus, K.A. Kokh, D.V. Sheglov, A.G. Milekhin, A.V. Latyshev
We have studied the structural and morphological features of SnSe films grown on Si(111) and BiSe(0001) surfaces in an reflection electron microscope. On both substrates, the SnSe growth started at 100 °C as an amorphous layer, and when thickness reached 1 nm, crystallized by raising the growth temperature to 250 °C without interruption of Sn and Se fluxes. The introduction of this growth-initiating
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A density functional theory study on the gas-phase formation of InGaN by metalorganic chemical vapor deposition J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 Yukang Sun, Peng Su, Hong Zhang, Guangyu Zheng, Ran Zuo, Lijun Liu
Density functional theory was used to analyze the formation of InGaN from trimethyl indium (TMIn) and trimethyl gallium (TMGa) by metalorganic chemical vapor deposition in ammonia in terms of oligomerization reactions of the nitrides and the elimination reactions of the oligomers formed. The reaction pathways were assumed by reference to previous studies, and their free energy and energy barrier characteristics
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Phase-controlled growth of indium selenide by metalorganic chemical vapor deposition J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-08 Yukihiro Endo, Yoshiaki Sekine, Yoshitaka Taniyasu
Indium selenide (InSe), group III-VI semiconductor, has various crystal phases, so that the growth technique for controlling the crystal phase is necessary for studying the novel properties as well as the device applications. In this work, we demonstrate the phase-controlled growth of InSe using metalorganic chemical vapor deposition. As the growth temperature increases, the crystal phase changes from
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Analysis of Macrostep Interaction via Carbon Diffusion Field in SiC Solution Growth J. Cryst. Growth (IF 1.8) Pub Date : 2024-02-07 Yuki Nakanishi, Kentaro Kutsukake, Yifan Dang, Shunta Harada, Miho Tagawa, Toru Ujihara
In the top-seeded solution growth (TSSG) method for SiC, control of macrostep development is crucial for improving the crystal quality. Dislocation conversion phenomena caused by macrosteps with a certain height on the crystal surface can reduce the dislocation density, while over-developed macrosteps bring macroscopic defects such as solvent inclusions. It is experimentally reported that solution