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Editorial IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-06-06 Thomas Zwick, Roberto Gómez-García, Dylan Williams, Kate Remley
This Special Issue of IEEE Microwave and Wireless Components Letters (MWCL) represents the second year that we include selected papers from the IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS). The IEEE MTT-S IMS is the MTT Society’s flagship conference and the world’s largest meeting on microwave technology. This year, it is to be held in Denver, CO, USA
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Table of Contents IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-06-07
Presents the table of contents for this issue of the publication.
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IEEE Microwave and Wireless Components Letters publication information IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-06-07
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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IEEE Microwave and Wireless Components Letters information for authors IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-06-07
These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.
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Corrections to “Parameterized Modeling Incorporating MOR-Based Rational Transfer Functions With Neural Networks for Microwave Components” IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-09 J. Zhang, J. Chen, Q. Guo, W. Liu, F. Feng, Q. J. Zhang
In the above article [1] , the funding information should have been included as:
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A 31-Tap Reconfigurable Analog FIR Filter Using Heterogeneously Integrated Polystrata Delay-Lines IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-10 Eric Wagner, Tim LaRocca, Mark Verderber, Carlos Rezende, Peter May
This letter presents a 31-tap analog finite impulse response (FIR) filter capable of synthesizing bandpass, bandstop, and multinull filter responses with continuous center frequency and bandwidth tuning from less than 1 to 20 GHz. The FIR filter delay-lines are realized using Polystrata 3-D air-metal-dielectric technology and are heterogeneously integrated directly on top of a CMOS die using 100- $\mu
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Deep Learning-Enabled Inverse Design of 30–94 GHz Psat,3dB SiGe PA Supporting Concurrent Multiband Operation at Multi-Gb/s IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-06 Zheng Liu, Emir Ali Karahan, Kaushik Sengupta
Deep learning and artificial intelligence, in general, is advancing scientific discovery and technological inventions through its ability to extract inherently hidden features and map it to output in a highly complex multi-dimensional space. Synthesis of electromagnetic (EM) structures with nearly arbitrary with desired functional properties is such an example of a high dimensional optimization space
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Multilayer GCPW-to-AFSIW Transition for High-Performance Systems on Substrate IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-03 Jean-Charles Henrion, Anthony Ghiotto, Tifenn Martin, Jean-Marie-Pham, Petronilo Martin-Iglesias, Christophe Goujon, Laurent Carré
This letter presents a transition from a top layer grounded coplanar waveguide (GCPW) to an inner layer air-filled substrate-integrated waveguide (AFSIW). Such type of transition is crucial for the interconnection of top layer surface-mounted radio-frequency integrated circuits (RFICs), toward the integration of complete microwave and millimeter-wave systems taking advantage of the low-cost and high-performance
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A 0.43 g Wireless Battery-Less Neural Recorder With On-Chip Microelectrode Array and Integrated Flexible Antenna IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-02 Hengying Shan, John Peterson, Nathan J. Conrad, Yu Tang, Yuhang Zhu, Shabnam Ghotbi, Sutton Hathorn, Alexander A. Chubykin, Saeed Mohammadi
This work presents a single-chip battery-less neural recorder with 12 on-die microelectrodes. It can be powered wirelessly up to 16 cm away from a horn antenna at 915 MHz and only consumes 104 $\mu \text{W}$ dc power for accessing ten enabled recording sites simultaneously, transmitting at 5 Mb/s. The implantable device integrated with a flexible antenna weighs only 0.43 g. In vivo measurements on
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Interferometric Motion Sensing With a Single-Channel Radar Sensor Based on a Novel Calibration-Free Phase Demodulation Technique IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-05-02 Wei Xu, Changzhan Gu, Junfa Mao
The interferometric radar sensor is superior in detecting the relative displacement motions. The conventional motion-recovery techniques leverage the quadrature $I/Q$ signals to reconstruct the phase information, where accurate calibration of the $I/Q$ signals is a prerequisite. Accurate phase demodulation depends on the precision of signals calibration. Incorrect signals calibration and hardware imperfections
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High-Q On-Chip Capacitors Featuring “Self-Inductance Cancellation” for RF and mm-Wave Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-29 Arian Rahimi, Pratheesh Somarajan, Qiang Yu, Elham Mohammadi, Jeffrey Garrett, Said Rami, Kalyan C. Kolluru
In this letter, we are reporting on the characterization of the on-chip metal–oxide–metal (MOM) capacitors that use “self-inductance cancellation” technique resulting in high-performance operation in radio frequency (RF)/millimeter-wave (mm-wave) regime. The utilized method helps mitigate the mutual magnetic induction between the metal fingers of a MOM capacitor while they are placed in proximity to
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33 GHz Overmoded Bulk Acoustic Resonator IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-28 Zachary Schaffer, Pietro Simeoni, Gianluca Piazza
In this work, we present a new class of thickness extensional microelectromechanical resonator, the overmoded bulk acoustic resonator (OBAR) for filtering applications in the 5G millimeter wave (mm-wave) spectrum. This resonator operates in a second overtone thickness mode with approximately equal thickness electrodes and piezoelectric layer so that acoustic energy is distributed evenly between the
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Broadband 100-W Ka-Band SSPA Based on GaN Power Amplifiers IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-27 Philipp Neininger, L. John, M. Zink, D. Meder, M. Kuri, A. Tessmann, C. Friesicke, M. Mikulla, R. Quay, Thomas Zwick
In this letter, we report on the realization of a two-stage 16-way solid-state power amplifier (SSPA) in the Ka-band. To this end, we describe the design of a high-power amplifier (HPA) in a 100-nm gallium nitride (GaN) process and its integration into a split-block waveguide module. The PA module achieves an output power of more than 7.6 W between 28 and 39 GHz. In conjunction with 16 of these PA
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Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2% IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-22 Masoud Pashaeifar, Leo C. N. de Vreede, Morteza S. Alavi
This letter presents a novel load-modulation-based 3rd-order intermodulation distortion (IMD3) cancellation technique for class-B CMOS power amplifiers (PAs). In a class-B PA, the IMD3 generated by the 3rd-order transconductance ( $g_{m3}$ ) and the gain compression have opposite signs, and thus, they can cancel each other at specific bias and loading conditions. The proposed Doherty topology allows
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A Quantitative Analysis of Physical Security and Path Loss With Frequency for IBOB Channel IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-22 Arunashish Datta, Mayukh Nath, Baibhab Chatterjee, Shovan Maity, Shreyas Sen
Security vulnerabilities demonstrated in implantable medical devices have opened the door for research into physically secure and low power communication methodologies. In this study, we perform a comparative analysis of commonly used ISM frequency bands and human body communication (HBC) for data transfer from in-body to out-of-body (IBOB). We develop a figure of merit (FoM) that comprises of the
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Modeling Thick Metal in Forward Volume Spin Wave Transducers IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-19 Max Robbins, David Connelly, Jonathan Chisum
In this letter, a theoretical expression for forward volume spin wave (FVSW) transducer radiation resistance is proposed to encompass the effects of transducer metal thickness. This thickness effect results in a reduction of radiation resistance that scales with metal thickness. The reduction in radiation resistance is especially evident in transducers with metal thicknesses approaching the wavelengths
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A 100-W W-Band GaN SSPA IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-19 Jason Soric, Nicholas Kolias, Jeffery Saunders, Jeffery Kotce, Andrew Brown, Christopher Rodenbeck, R. S. Gyurcsik
We present a compact W-band pulsed solid-state amplifier (SSPA) with WR-10 interfaces that delivers a record solid-state output power of 100 W, which is $> 2\times $ previously published waveguide combined W-band SSPAs. The SSPA leverages W-band gallium nitride (GaN) monolithic microwave integrated circuits (MMICs) and low-loss split-waveguide power combining. The amplifier utilizes an innovative modular
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A 110 GHz Comb Generator in a 250 nm InP HBT Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-18 Jerome Cheron, Dylan F. Williams, Richard A. Chamberlin, Miguel E. Urteaga, Paul D. Hale, Rob D. Jones, Ari D. Feldman
We report a monolithic microwave integrated-circuit (MMIC) comb generator capable of producing a repetitive narrow pulse (7.1 ps pulse duration) with sharp edges (4.2 ps falling time). The circuit was designed in a 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) technology using differential pairs. We characterized the output signal with a 110 GHz sampling oscilloscope and de-embedded
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A Large Dynamic Range Reconfigurable Interpolation Digital Transmitter for NB-IoT Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-18 Nagarajan Mahalingam, Hang Liu, Yisheng Wang, Kiat Seng Yeo, Chien-I Chou, Hung-Yu Tsai, Kun-Hsun Liao, Wen-Shan Wang, Ka-Un Chan, Ying-Hsi Lin
In this letter, we present a digital transmitter for dual-band narrowband-Internet-of-Things (NB-IoT) applications achieving a large dynamic range with high-speed cartesian RF-DACs requiring less area and consuming low power consumption. The proposed transmitter incorporates integrated output baluns, a reconfigurable digital interpolater-based oversampling for DAC image suppression, or avoidance of
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Air-Induced PIM Cancellation in FDD MIMO Transceivers IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-15 Vesa Lampu, Lauri Anttila, Matias Turunen, Marko Fleischer, Jan Hellmann, Mikko Valkama
In this letter, air-induced passive intermodulation (PIM) modeling and cancellation schemes are presented in a multiple-input multiple-output (MIMO) frequency-division duplexing (FDD) transceiver context. PIM is distortion generated by nonlinear passive devices either within the transmitter chain or outside the transceiver system, as is the case in air-induced PIM. In FDD systems, the PIM products
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Miniaturized 28-GHz Packaged Bandpass Filter With High Selectivity and Wide Stopband Using Multilayer PCB Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Yunbo Rao, Huizhen Jenny Qian, Jie Zhou, Yuandan Dong, Xun Luo
In this letter, a packaged bandpass filter (BPF) with a compact size of $1.5 \times 1.5 \times 0.315$ mm3 operating at 28 GHz is proposed. This BPF is implemented based on a multilayers printed circuit board (PCB) fabrication process with ultra-thin substrate. With the packaged configuration, the filter can not only reduce the circuit size and component insertion loss, but also eliminate the effect
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Josephson Junctions-Based Low-Temperature Superconducting Phase Shifter for X- and K-Bands Using MIT-LL SFQ5ee Process IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Navjot K. Khaira, Tejinder Singh, Raafat R. Mansour
This letter presents a low-temperature superconductor (LTS)-based ${X}$ - and ${K}$ -band analog ultra-wideband phase shifters realized by coupling an array of radio-frequency superconducting quantum interference devices (rf-SQUIDs) to a microwave transmission line (TL). The proposed device is realized using MIT-LL SFQ5ee eight-layer niobium-based process. The device is designed by distributing 2256
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Nonlinear Analysis of an Injection-Locked Oscillator Coupled to an External Resonator IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Víctor Ardila, Franco Ramírez, Almudena Suárez
This work investigates an injection-locked power oscillator inductively coupled to an external resonator for wireless power transfer. The system allows a high transfer efficiency, while ensuring a constant oscillation frequency versus the coupling factor, unlike free-running implementations. An analytical formulation provides insight into the impact of the coupling factor on the locked-operation ranges
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2–8 GHz Interference Detector With 1.1 μs Response IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Mohammad Abu Khater, Dimitrios Peroulis
This letter reports the first wideband method that: 1) detects both the power and frequency of an arbitrary interferer within a two-octave bandwidth and 2) subsequently deactivates the interferer through a frequency-tunable narrowband bandstop filter (BSF). The entire process can be completed within approximately $1~\mu \text {s}$ . The success of the proposed detection method relies on creating frequency-
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Closed-Loop Antenna Impedance Tuning via Transfer Function Learning for 5G Sub-6 GHz User Equipment IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Taha Yekan, Donghoon Lee, Pranav Dayal, Walid Y. Ali-Ahmad
Closed-Loop Antenna Impedance Tuning (CL-AIT) is a technique to adaptively reduce the antenna impedance mismatch by monitoring changes in the antenna impedance and adjusting a tunable matching network (or tuner). This work presents a data-driven CL-AIT solution to find the optimal code for configuring the tuner in order to maximize the power transferred to the antenna; it also minimizes the need for
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Electromagnetic Analysis of Integrated On-Chip Sensing Loop for Side-Channel and Fault-Injection Attack Detection IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-13 Archisman Ghosh, Mayukh Nath, Debayan Das, Santosh Ghosh, Shreyas Sen
Securing crypto-cores is becoming increasingly difficult with the advent of electro-magnetic (EM) side-channel analysis (EMSCA) and fault injection attacks (FIAs). This letter presents an Ansys high-frequency structure simulator (HFSS)-based simulation framework for EM analysis of an integrated on-chip sensor for detecting EMSCA and FIA and validates the efficacy of an on-chip higher metal layer loop-based
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Irradiated Silicon for Microwave and Millimeter Wave Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-12 Jerzy Krupka, Bartlomiej Salski, Tomasz Karpisz, Pawel Kopyt, Leif Jensen, Marcin Wojciechowski
Complex permittivity measurements of irradiated high-resistivity float-zone silicon have been performed in this letter from microwave to millimeter-wave frequencies employing three different resonance techniques. It has been proven that the irradiated silicon exhibits resistivity of the intrinsic silicon at temperatures larger than 295 K and the loss tangent due to phonon absorption reaches about 10−5
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Time Dependence of RF Losses in GaN-on-Si Substrates IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-11 Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin
GaN-on-Si HEMT technology suffers from RF losses and non-linearities originating from the conductive Si substrate. The understanding and modeling of substrate performance are the keys to enabling next-generation front-end modules. In this letter, we show that when subjected to a chuck bias step, the effective substrate resistivity of a typical $C$ -doped HEMT stack shows a dynamic behavior. Using a
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A Compact SiGe Stacked Common-Base Dual-Band PA With 20/18.8 dBm Psat at 36/64 GHz Supporting Concurrent Modulation IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-11 Zheng Liu, Emir Ali Karahan, Kaushik Sengupta
This work presents a compact, concurrent dual-band (36/64 GHz) linear power amplifier in 90 nm SiGe technology. To simultaneously overcome the gain and power limitation of conventional common-emitter (CE) silicon device at mm-wave, the stacked common-base (SCB) topology in SiGe is studied and utilized as PA cell. A highly efficient dual-band output network enables the optimum load-line matching for
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High-Integration and Low-Cost Transmitter Packaging Solution for 0.2 THz SiP Application Using HTCC Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-08 Bo Yu, Zhigang Wang, Peng Wu, Oupeng Li, Hua Cai, Jia He, Guangjian Wang, Ruimin Xu
A high-integration and low-cost transmitter packaging solution for 0.2-THz system-in-package (SiP) application is newly presented using high-temperature co-fired ceramic (HTCC) technology. To improve 3-D integration, internal vertical air-filled interconnection waveguides buried in the HTCC package are explored and fabricated. A compact MoCu waveguide bandpass filter (BPF) is designed and integrated
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Back-Gate Lumped Resistance Effect on AC Characteristics of FD-SOI MOSFET IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-08 Martin Vanbrabant, Lucas Nyssens, Valeriya Kilchytska, Jean-Pierre Raskin
In this work, the impact of a large lumped resistor connected to the back-gate (B-G) of an fully depleted silicon-on-insulator (FD-SOI) transistor is studied. A related transition in the frequency responses of output conductance and capacitance is evidenced experimentally by $S$ -parameters measurements in a large frequency range up to 40 GHz. However, present compact model does not correctly reproduce
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A 1–170-GHz Distributed Down-Converter MMIC in 35-nm Gate-Length InGaAs mHEMT Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-08 Fabian Thome, Sandrine Wagner, Arnulf Leuther
This letter demonstrates two distributed down-converter monolithic microwave integrated circuits (MMICs). MMIC1 contains a distributed down-conversion mixer and MMIC2 expands MMIC1 by an eight-cell distributed local oscillator (LO) driver amplifier. The letter includes an investigation of the optimal gate width for each of the transistors in the stack of the source-feedback mixer cells. The MMICs are
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160-GSa/s-and-Beyond 108-GHz-Bandwidth Over-2-Vppd Output-Swing 0.5-μm InP DHBT 2:1 AMUX-Driver for Next-Generation Optical Communications IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-08 R. Hersent, A. Konczykowska, F. Jorge, F. Blache, V. Nodjiadjim, M. Riet, C. Mismer, J. Renaudier
This letter reports on a 108-GHz bandwidth 0.5- $\mu \text{m}$ InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of the authors’ knowledge, this 2:1 AMUX-driver shows unprecedented 1.9-Vppd 160-GSa/s 160-GBd non-return-to-zero (NRZ) and 2.4-Vppd 100-GSa/s 100-GBd PAM-4 output swings, with very high-quality eye diagrams, without any digital signal processing (DSP) or postprocessing. Up to
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Incoherent Point Spread Function Estimation and Multipoint Deconvolution for Active Incoherent Millimeter-Wave Imaging IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-08 Jorge R. Colon-Berrios, Stavros Vakalis, Daniel Chen, Jeffrey A. Nanzer
We present an approach to image deconvolution in active incoherent millimeter-wave (AIM) imaging. While traditional incoherent imaging systems capture thermal radiation from the scene, AIM imaging uses the transmission of noise signals to increase the signal-to-noise ratio (SNR) while maintaining the necessary space–time incoherence required for image reconstruction. Images formed by any imaging technique
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Proof-of-Concept of Millimeter-Wave RF Beamforming Transmitter Architecture Employing Frequency-Multiplier-Based Up-Converters IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-07 Ahmed Ben Ayed, Ifrah Jaffri, Ali M. Darwish, Patrick Mitran, Slim Boumaiza
This letter proposes a millimeter-wave (mm-wave) RF beamforming transmitter (TX) architecture that employs frequency multipliers (FMs) as frequency up-converters to avoid the challenges associated with the signal and local oscillator (LO) distribution networks that intensify with the increase of operating frequency. The proposed architecture incorporates a single-input– single-output (SISO) digital
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IEEE Microwave and Wireless Components Letters publication information IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-07
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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Table of Contents IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-07
Presents the table of contents for this issue of this publication.
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IEEE Microwave and Wireless Components Letters information for authors IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-07
These instructions give guidelines for preparing papers for this publication. Presents information for authors publishing in this journal.
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Synthesis of Extracted-Zero Filters IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-05 Giuseppe Macchiarella, Stefano Tamiazzo, Simone Bastioli, Richard V. Snyder
We present an exact synthesis procedure for the low-pass prototype of extracted-zero filters. This type of filter has been recently introduced and it allows the realization of a true inline topology with up to two transmission zeros. Compared to other inline (or quasi-inline) solutions, the one here considered is the simplest to dimension and fabricate (the same techniques used for all-pole filters
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Miniaturized Quarter-Mode SIW Filters Loaded by Dual-Mode Microstrip Resonator With High Selectivity and Flexible Response IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-05 Gu Lin, Yuandan Dong, Xun Luo
A novel miniaturized multilayer quarter-mode substrate integrated waveguide (QMSIW) filter with high selectivity and wide stopband is proposed. First, an innovative multilayer dual-mode microstrip resonator is proposed to couple the QMSIW resonators located at the upper and lower substrate layers. The combination of the dual-mode resonator with the two QMSIW cavities leads to a fourth-order filtering
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Ultralow Power E-Band Low-Noise Amplifier With Three-Stacked Current-Sharing Amplification Stages in 28-nm CMOS IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-05 Liang Qiu, Jiabing Liu, Qianyi Dong, Zhihao Lv, Kailong Zhao, Shengjie Wang, Yen-Cheng Kuan, Qun Jane Gu, Xiaopeng Yu, Chunyi Song, Zhiwei Xu
This letter presents a differential ultralow power low-noise amplifier (LNA) with stacked three-stage common-source (CS) amplification cells. A three-coil transformer is developed to boost each stage’s $g_{m}$ and reuse current, which renders high gain, low noise, and low power consumption. The proposed LNA has been implemented in a 28-nm CMOS process and achieves a peak gain of 13.48 dB and a minimum
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A 1.9-dB NF K-Band Temperature-Healing Phased-Array Receiver Employing Hybrid Packaged 65-nm CMOS Beamformer and 0.1-μm GaAs LNAs IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-04-05 Dixian Zhao, Peng Gu, Jiajun Zhang, Yongran Yi, Mengru Yang, Chenyu Xu, Yuan Chai, Huiqi Liu, Pingyang He, Na Peng, Liangliang Liu, Xiangxi Yan, Xiaohu You
A 1.9-dB NF K-band phased-array receiver (RX) is presented, which employs the hybrid packaged 65-nm CMOS beamformer and 0.1- $\mu \text{m}$ GaAs LNAs based on the fan-out wafer-level chip-scale packaging (WLCSP) technology. Power-efficient gain and phase tuning blocks are utilized to reduce power consumption. Temperature-healing design methodology is adopted to ensure nearly constant gain response
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Capacitive Coupler for Wireless Power Transfer to Intravascular Implant Devices IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-31 Masaya Tamura, Takamasa Segawa, Marimo Matsumoto
In this letter, we analyze a capacitive coupler for wireless power transfer (WPT) to intravascular implant devices using a stent that contacts the vessel wall for vasodilation as a power receiver. We focus on the effect of conductivity on the transfer efficiency of capacitive WPT and verify the relationship between the maximum transfer efficiency and conductivity based on an equivalent circuit, including
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Improving Wireless Power Transfer Efficiency With DC/DC Boost Charger by Multi-Sine Excitation at 5.8 GHz IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-30 M. Passafiume, G. Collodi, A. Cidronali
This work deals with new design techniques of RF to dc converter coupled with commercial dc/dc converters, for efficient wireless power transfer. The dc/dc boost converter operates as current sinks, thus imposing challenging design constraints. We investigate the impact of applying a multi-sine RF input signal on power transfer efficiency, involving a source-pull optimization to maximize RF to dc energy
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Cryogenic Characterization of the High Frequency and Noise Performance of SiGe HBTs From DC to 70 GHz and Down to 2 K IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-29 S. Bonen, G. Cooke, T. Jager, A. Bharadwaj, S. Pati Tripathi, D. Céli, P. Chevalier, P. Schvan, S. P. Voinigescu
The high frequency and noise performance ( $T_{\mathrm {MIN}}$ , NFMIN, $R_{n}$ , and $Z_{\mathrm {sopt}}$ ) of SiGe heterojunction bipolar transistors (HBTs) are characterized for the first time from dc and $S$ -parameter measurements up to 70 GHz and from 2 to 400 K. Significantly improved current gain ~10 000, minimum noise temperature, $T_{\mathrm {MIN}}$ (< 1 K below 8.5 GHz), MAG, $f_{T}$ (458
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Inverted Scanning Microwave Microscopy of a Vital Mitochondrion in Liquid IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-29 S. N. Afifa Azman, Gianluca Fabi, Eleonora Pavoni, C. H. Joseph, Niccolò Pini, Tiziana Pietrangelo, Luca Pierantoni, Antonio Morini, Davide Mencarelli, Andrea Di Donato, James C. M. Hwang, Marco Farina
The inverted scanning microwave microscope (iSMM) is a recently developed variety of scanning microprobe microscopes. Similar to a scanning microwave microscope (SMM), the iSMM is sensitive to not only surface structure, but also electromagnetic properties below the surface. Different from the SMM, the iSMM can be converted from any scanning probe microscope, such as an atomic force microscope (AFM)
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New Triple-Resonance Configuration Using Stubbed Waveguide Dual-Mode Cavities IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-28 Simone Bastioli, Richard V. Snyder
This letter presents new configurations of stubbed waveguide cavities for the realization of pseudo-elliptic and self-equalized filters. The basic structure consists of a main TE102/TE201 dual-mode cavity that is loaded with a pair of waveguide stubs. The two stubs are located at the top and bottom walls of the cavity while always being parallel and in-line to each other. Such a two-stub arrangement
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Received Signal Strength Estimation in Indoor Environment Using High Frequency Rytov Approximation IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-28 Amartansh Dubey, Samruddhi Deshmukh, Dingfei Ma, Ross Murch
We present a new and improved formulation of Rytov approximation (RA) using the theory of ray tracing in low loss media for solving the direct scattering problem. The resultant model provides an accurate prediction of wave scattering in the presence of electrically large scatterers with high permittivity and small loss tangent. The high validity range and the straightforward linear formulation of the
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High-Gain 670-GHz Amplifier Circuits in InGaAs-on-Insulator HEMT Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-25 Laurenz John, Axel Tessmann, Arnulf Leuther, Thomas Merkle, Hermann Massler, Sébastien Chartier
In this letter, we report on the development of high-gain WR-1.5 amplifier circuits, utilizing a transferred-substrate InGaAs-on-insulator (InGaAs-OI) high-electron-mobility transistor (HEMT) technology on Si with 20-nm gate length. A six-stage and a nine-stage amplifier circuit are described, which are based on gain cells in cascode configuration. With more than 30 dB of measured gain in the frequency
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Contactless Measurement of Human Systolic Time Intervals Based on Doppler Cardiograms in Clinical Environment IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-25 Shuqin Dong, Li Wen, Zhi Zhang, Changzhan Gu, Junfa Mao
As the most important organ of human body, heart has many measures and indicators to assess the cardiac function in clinic. Ventricular systolic time intervals (STIs) are of major relevance in providing crucial information regarding cardiovascular state. However, the existing measurement technologies are costly, complicated to operate, and also require contact sensors. Based on the human cardiovascular
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Application of Nonlinear Transmission Lines for Picosecond Pulse Sharpening IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-24 A. M. Bobreshov, A. S. Zhabin, A. D. Ryazantsev, V. A. Stepkin, G. K. Uskov
The amplitude and width of the ultrashort pulses depend on the performance of the generator’s electronic elements. The usage of step recovery diodes (SRDs) with picosecond switching time can lead to a significant increase in device cost. In this letter, nonlinear transmission line (NLTL) was built and tested using commercial-off-the-shelf components to improve the performance of the generator that
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Measurement of Uniaxially Anisotropic Dielectrics With a Fabry–Perot Open Resonator in the 20–50 GHz Range IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-18 Tomasz Karpisz, Bartlomiej Salski, Pawel Kopyt, Jerzy Krupka, Marcin Wojciechowski
Measurement results of uniaxially anisotropic materials performed with the aid of a plano-concave Fabry–Perot open resonator in the 20–50 GHz frequency range are presented and discussed in this letter. It is shown that a linear polarization of Gaussian modes applied in the characterization allows extracting in-plane complex permittivity of such materials as crystals and foils in a single measurement
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Dual-Band Balanced to Unbalanced Multilayer Filtering Magic-T Based on SIW Cavity IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-10 Gang Zhang, Jian Zheng, Xiu Yin Zhang, Hua Yang, Wanchun Tang, Jiquan Yang
A new dual-band balanced to unbalanced (BTU) multilayer filtering magic-T (FMT) based on square substrate integrated waveguide (SIW) cavity is proposed in this letter. Degenerate TE 201 and TE 203 modes are exploited to realize the requested dual-band filtering responses and in-/out-of-phase characteristic. The requested differential-mode (DM) transmission, common-mode (CM) suppression, and port-to-port
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Guest Editorial Special Issue on Radar and Microwave Sensor Systems IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-03-10 Christian Waldschmidt, Jeffrey Nanzer, Thomas Zwick
This Special Issue is devoted to technical papers on radar and sensor systems in microwave and millimeter-wave bands. Massive technological progress has been made in recent years at the microwave device and component level, enabling new research directions on sophisticated microwave and millimeter-wave systems. Among the most significant fields of application for such systems has been sensor technology
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A 2.4-GHz Sub-Sampling PLL With an Adaptive and No Power Contribution FLL Achieving 103.58 fs rms Jitter and −257.8 dB FOM IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-28 Shujiang Ji, Yizhuo Wang, Yuxiao Zhao, Haoyuan Gao, Yiyun Mao, Xinyi Lin, Sijia Lai, Hao Min, Na Yan
A sub-sampling PLL (SSPLL) employing an adaptive frequency-locked loop (FLL) without static power consumption is proposed in this letter. A new unlock detection mechanism and a configurable PFD are realized in the adaptive FLL. With the new unlock detection mechanism, while the FLL that contains phase detector, divider, and charge pump dissipates no power during the locked steady state, it automatically
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A High-Performance 330-GHz Subharmonic Mixer Using Schottky Diodes IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-21 Yang Liu, Zhongqian Niu, Bo Zhang, Yi Hu, Bingli Dai, Chuanqi Qiao, Yinian Feng, Yong Fan, Xiaodong Chen
This letter presents the design of a state-of-the-art 330-GHz subharmonic mixer (SHM) using planar Schottky diodes. Unlike conventional mixers, the embedded impedances of the diode chip are accurately extracted and then used for direct synthesis of the diode’s peripheral circuit to efficiently design SHMs with good performance. Band-stop filters (BSFs) using symmetrical open stubs are adopted to recycle
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A 0.6-dB Low Loss and 3–165 GHz Wideband Phase Difference Sub-THz Coupler in 0.18-μm CMOS IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-21 Yu-Hsiang Chang, Cheng-Hung Hsieh, Shi-Peng Chen, Yiming Li, Seiji Samukawa, Tzong-Lin Wu, Zuo-Min Tsai
In this letter, a new 90° coupler with a symmetric coupled-line structure featuring the use of the tuning multiple floating metals technique is designed, analyzed, and verified for subterahertz (THz) applications; this new coupler was fabricated on the standard Taiwan Semiconductor Manufacturing Company (TSMC) 0.18- $\mu \text{m}$ 1P6M CMOS process. With the proposed structure, the impedances of even
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Design and Analysis of High-Gain and Compact Single-Input Differential-Output Low Noise Amplifier for 5G Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-18 Hao-Hsuan Chen, Wei-Chung Cheng, Cheng-Hung Hsieh, Zuo-Min Tsai
This letter describes the design, analysis, and testing of a 28-GHz single-input differential-output (SIDO) low-noise amplifier (LNA) with a noise figure of 2.5 dB, compact size (0.25 mm2), and high gain (22.3 dB). The proposed LNA was fabricated using the Taiwan Semiconductor Manufacturing Company (TSMC) 65-nm CMOS process. This amplifier contains a two-stage common-source (CS) buffer amplifier for
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A Compact Ultra-Broadband RF Rectifier Using Dickson Charge Pump IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-17 Wenbo Liu, Kama Huang, Tao Wang, Jing Hou, Zhuoyue Zhang
In this letter, an ultra-broadband rectifier is proposed and tested to get more RF energy from ambient. The rectifier using the Dickson charge pump increases the bandwidth and improves the dc voltage of the output load. The upper branch uses an inductor in series to counteract the capacitance of the imaginary parts of the diode and at the same time acts as a booster circuit to increase the output voltage
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Harmonic Suppression of a Three-Stage 25–31-GHz GaN MMIC Power Amplifier Using Elliptic Low-Pass Filtering Matching Network IEEE Microw. Wirel. Compon. Lett. (IF 2.862) Pub Date : 2022-02-17 Peng Chen, Xiao-Wei Zhu, Rui-Jia Liu, Ziming Zhao, Lei Zhang, Chao Yu, Wei Hong
In this letter, the modified elliptic low-pass filtering (LPF) matching network (MN) is proposed for harmonic suppression of a wideband gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) power amplifier (PA) at millimeter-wave (mm-wave). To investigate the effectiveness of the method at mm-wave, a three-stage 25–31-GHz GaN MMIC PA is designed using a commercial 150-nm GaN HEMT foundry