This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, $g_{m}$ restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50–800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of −7.1 dBm, and power dissipation of 1.2 mW.

中文翻译：

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采用电流再利用和器件再利用正分流反馈技术的低功率 Sub-GHz 宽带 LNA

这封信介绍了一种用于 sub-GHz 宽带应用的低功率电流复用和设备复用低噪声放大器 (LNA)。基于并联反馈共栅极 (SFBCG) 混合拓扑和所提出的电流/设备再利用并联反馈 (SFB) 技术， $g_{m}$限制得到缓解。此外，通过将输出耦合到同相电流源晶体管的栅极以激活正反馈而无需额外的功率负担，增加了设计自由度，从而实现更高增益和更低噪声的设计。该低噪声放大器原型采用 90 纳米 CMOS 技术实现，有源面积为 0.075 平方毫米。测量结果显示峰值增益为 21.3 dB，3 dB 带宽为 50–800 MHz，噪声系数为 4.5 dB，三阶截取点 (IIP3) 为 −7.1 dBm，功耗为 1.2 mW。