This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18- $\mu \text{m}$ CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality ( $Q$ ) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers $\text{M}_{\mathrm {5-2}}$ and used in current-reuse (CR) VCO. The M6 inductor improves the $Q$ -factor by more than 25%over one loop inductor in the frequency band of interest, while the $\text{M}_{\mathrm {5-2}}$ inductor uses four shunt layers to boost the $Q$ -factor by 28% in $K$ -band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.

中文翻译：

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采用 0.18 μm CMOS 技术的高品质因数两个正交电感器的双频带 VCO

这项工作引入了一种新的拓扑结构，用于设计低相位噪声 (PN) 双频带压控振荡器 (VCO)，方法是在 0.18- 中提出正交定位的电感器 $\mu\文本{m}$CMOS。电感器使用五个金属层实现，保持最低层为空以最大限度地提高质量（ $Q$ ） 因素。第一个电感是使用顶层（M6）的两个半分流八边形环路，用于交叉耦合压控振荡器，而第二个电感由四个 C 形分流电感组成，使用下四层 $\text{M}_{\mathrm {5-2}}$并用于电流重用 (CR) VCO。M6电感提高了 $Q$ - 在感兴趣的频带中，一个环路电感器的系数超过 25%，而 $\text{M}_{\mathrm {5-2}}$电感器使用四个分流层来提升 $Q$ -因素 28% $K$ -带与单层电感器相比。VCO 的振荡频率为 22.36 至 23.4 GHz，1 MHz 时的 PN 为 −112.4 dBc/Hz，品质因数 (FoM) 为 −188.8 dBc/Hz，而 CR VCO 的调谐范围为 23.8 至 25.7 GHz，PN 为 − 1 MHz 和 FoM 时为 107 dBc/Hz -185.8 dBc/Hz。