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Toward radiative-limited coherence of erbium dopants in a nanophotonic resonator Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-22 Likai Yang, Sihao Wang, Hong X. Tang
Atomic-like emitters in the solid state serve as important resources in the advancement of future quantum networks. In particular, intra-4f optical transitions of rare earth ions exhibit excellent coherence properties thanks to the shielding effect of outer electrons. Still, the presence of various dephasing channels in solid state hosts introduces additional decoherence beyond the radiative decay
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Violet phosphorus nanosheets for room-temperature dimethylamine detection and mechanism insights by DFT calculation Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-22 Yinhua Hu, Xiao Chang, Jun Zhang, Xianghong Liu
Two-dimensional (2D) materials offer great prospects in room temperature (RT) gas sensors with minimum power consumption, compared to conventional metal oxide semiconductor sensors that require high temperature operation. In this work, we prepared violet phosphorus (VP) nanosheets by optimized liquid-phase exfoliation in various solvents. A highly sensitive gas sensor has been fabricated by using the
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Defect evolution of iodine vacancy and related strain modulation in all-inorganic halide perovskites Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-21 Xin Xu, Yating Cai, Yating Qu, Ang Li, Yujia Gao, Tengcheng Huang, Zhuxia Wu, Xi Huang, Zheyu Zhang, Zhenyuan Wu, Tingting Shi, Weiguang Xie, Pengyi Liu
Vacancy related defects play a crucial role in optoelectronic properties and carrier transport for photovoltaic materials, especially for its structural evolution becoming non-radiative defects induced by strain. Thus far, the evolution phenomena of vacancy defects in halide perovskite triggered by energy or strain have not been systematically investigated. Herein, we study the change in defect levels
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All-solid integratable device of electric field control of magnetism based on hydrogen ion migration in La1−xSrxMnO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-21 Weikang Liu, Xinyi Wu, Shuyun Wu, Xiangxiang Zhao, Tingting Miao, Ruiyue Chu, Bin Cui, Bin Cheng, Liang Liu, Jifan Hu
Field-effect transistors based on semiconductor integration technology have come to a bottleneck, while electric field control of magnetism has great potential for applications in next-generation magnetic memory and calculators based on electron spins. Magnetic properties manipulation from a mechanism of ion migration driven by an electric field has the advantages of low energy consumption, nonvolatility
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Observation of photoelectric-induced microplasma avalanche breakdown in AlGaN ultraviolet photodiode with separate absorption and multiplication structure Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-21 Jiying Cao, Qing Cai, Haifan You, Pengfei Shao, Jin Wang, Hui Guo, Junjun Xue, Bin Liu, Zili Xie, Xun Cao, Hai Lu, Youdou Zheng, Rong Zhang, Dunjun Chen
Amplification of weak ultraviolet signals has always been a challenging issue to design and fabricate high-performance ultraviolet photodetectors. Here, we observe a distinctive microplasma breakdown behavior in AlGaN-based ultraviolet avalanche photodiodes with artificial mesa architecture. At 107 V breakdown voltage, the photocurrent increases sharply whereas dark current intriguingly remains at
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Tunable flatband plasmonic quasi-bound states in the continuum based on graphene-assisted metasurfaces Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Zhuo Wang, Yue Wang, Zhi Cheng, Jiaqi Qu, Mingjie Cui, Dongmei Huang, Changyuan Yu
Bound states in the continuum (BICs) of plasmonic systems offer a powerful method for enhancing light–matter interaction at the nanoscale. The recent emergence of flatband quasi-BICs has alleviated the limitation of the incident angle of the excitation light on generating high-quality-factor (high-Q-factor) resonances, which makes it feasible to produce substantial near-field enhancement by focused
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An energy efficient reservoir computing system based on HZO memcapacitive devices Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Pan Zhang, Xinrui Ma, Yulong Dong, Zhixin Wu, Danyang Chen, Tianning Cui, Jingquan Liu, Gang Liu, Xiuyan Li
Memcapacitor devices based on ferroelectric material have attracted attention recently in application of neuromorphic computing due to lower static power relative to memristors. They have been used for establishing fully connected neural networks but not yet for recurrent neural networks (RNNs), which owns the advantage in temporal signal processing. As an improved network architecture for RNNs, reservoir
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A liquid electrolyte-based memristor with application in associate learning Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Gang Dou, Jiandong Liu, Wenhai Guo, Lixin Liu, Douyin Zhang, Mei Guo
Most of the existing memristors are complicated to prepare, which is not conducive to actual applications. In this paper, a Zn/ZnSO4/Pt (ZSP) memristor with a simple preparation method is fabricated. The I–V characteristics show good switching characteristics and a stable SET/RESET process. By modulating the weight (current of the memristor) continuously, the ZSP memristor simulates typical synaptic
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Control of intrinsic polarity for work function modulation of polyvinylidene fluoride crystalline phases Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Ajay Kumar, Dipankar Mandal
Ferroelectric polymers with high flexibility and inherent piezo- and pyro-electric properties have gained tremendous importance for next-generation wearable electronics. In this context, we investigate the intrinsic polarity mediated work function modulation in α-, γ-, and β-crystalline phases of a ferroelectric polymer, namely, polyvinylidene fluoride. A wide range of surface potentials (i.e., −5
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Observation of an abnormally large bandgap in monolayer 1T′-WS2 grown on SrTiO3(001) Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Qichao Tian, Ziyu Wang, Wei-Min Zhao, Yong-Jie Xu, Gan Liu, Li Wang, Pengdong Wang, Li-Guo Dou, Wang Chen, Shaoen Jin, Junyu Zong, Qinghao Meng, Fan Yu, Can Wang, Xiaoxiang Xi, Fang-Sen Li, Shao-Chun Li, Junwei Liu, Yi Zhang
The 1T′ structural phase of monolayer transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) has attracted broad interest because of an exotic quantum spin Hall insulator state. Among them, the investigation on the electronic structures of the 1T′-WS2 monolayer is still lacking due to the difficulty in obtaining the 1T′-WS2 as a metastable phase. Here, we report the growth of 1T′ phase WS2
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Surface-plasmon-enhanced MoS2 multifunctional optoelectronic memory for emulating human retinal imaging Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Chengjie Zhou, Wencheng Niu, Lei Li, Dandan Hao, Hao Huang, Houqiang Fu, Xingqiang Liu, Xuming Zou, Fukai Shan, Zhenyu Yang
As one of the most important members of the two-dimensional (2D) chalcogenide family, MoS2 plays a fundamental role in the development of 2D electronic and optoelectronic designs. However, MoS2-based optoelectronic devices are hindered by their weak light–matter interactions, which make it challenging to achieve excellent device performance in photoelectronic memory applications. Here, we developed
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Near-zero-power infrared relay based on microfluidic switch and metamaterial absorber Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Zekun Zhang, Jiawen Yan, Jiahao Zhao, Peng Li
Internet of Things sensor nodes, which integrate information acquisition, processing, exchange, and execution modules, have widely been used for unattended industrial production, environmental monitoring, and other fields. However, limited battery power constrains the lifespan of the sensor nodes. In this paper, we propose a near-zero-power infrared relay consists of microfluidic switches and a metamaterial
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Ferroelectric-programmed photonic computing in monolayer WS2 Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Xing Wu, Kai Xu, Kangmin Leng, Ruihua Ma, Longlong Shu, Li Wang, Qisheng Wang
Photonic computing has the potential to significantly improve energy efficiency and data processing speed beyond that of von Neumann architecture. Although various optical processing techniques have been developed during recent two decades, the photonic manipulation is still a big challenging due to the bosonic nature of photons. Herein, we propose a ferroelectric field-controlled photonic computing
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Binary frequency shift keying modulation in spin torque oscillators with synthetic antiferromagnetic layer Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Yiyue Wang, Cuixiu Zheng, Dalin Zhang, Hao-Hsuan Chen, Yaowen Liu
Antiferromagnets exhibit ultrafast magnetization precession, which has the potential to enable the development of terahertz spin torque nano-oscillators. By utilizing perpendicularly magnetized magnetic nanopillars with a synthetic antiferromagnetic (SAF) free layer, we have demonstrated through theoretical and numerical analysis that stable out-of-plane precession states can be achieved by applying
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Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photodiodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-20 Hoon Jeong, Minkyu Cho, Zhiyu Xu, Frank Mehnke, Nepomuk Otte, Shyh-Chiang Shen, Theeradetch Detchprohm, Russell D. Dupuis
A deep-ultraviolet Al0.6Ga0.4N p–i–n avalanche photodiode (APD) structure was grown on a (0001) AlN bulk substrate by metalorganic chemical vapor deposition. The wafer was fabricated into 20 μm diameter mesa APD devices both with and without ion-implantation with nitrogen ions on the periphery of the p-type region of the diode mesa and tested. The dark current density vs bias, photoresponse, and the
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Anisotropic strain relaxation in epitaxially constrained α -(Al,Ga)2O3 thin films on a-plane Al2O3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Anna Reis, Michael Hanke, Joao Marcelo J. Lopes, Achim Trampert
Binary α-Ga2O3 and ternary α-(AlxGa1−x)2O3 thin films with x = 0.29 and 0.54 were deposited on a-plane Al2O3 substrates via plasma-assisted molecular beam epitaxy. The strain relaxation dynamics along three orthogonal crystal directions was investigated ex situ and in situ by synchrotron-based high-resolution x-ray diffraction. A pronounced in-plane anisotropy was observed as strain is preferably built
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Resistive switching localization by selective focused ion beam irradiation Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Nareg Ghazikhanian, Javier del Valle, Pavel Salev, Ralph El Hage, Yoav Kalcheim, Coline Adda, Ivan K. Schuller
Materials displaying resistive switching have emerged as promising candidates for implementation as components for neuromorphic computing. Under an applied electric field, certain resistive switching materials undergo an insulator-to-metal transition through the formation of a percolating filament, resulting in large resistance changes. The location and shape of these filaments are strongly influenced
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Helicity-controlled switching of superconducting states by radiation pulse Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 M. D. Croitoru, B. Lounis, A. I. Buzdin
We provide a theoretical analysis of the possibility of using circularly polarized radiation to switch between two different quantum states of a superconducting nanoring subjected to the half quantum flux. Numerical modeling, performed in the framework of the time-dependent Ginzburg–Landau equation, reveals the condition for on-demand switching between current-carrying states with different helicities
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Prestrain-induced bistability in the design of tensegrity units for mechanical metamaterials Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Andrea Micheletti, Filipe A. dos Santos, Simon D. Guest
Tensegrity metamaterials are a type of artificial materials that can exploit the tunable nonlinear mechanical behavior of the constituent tensegrity units. Here, we present reduced-order analytical models describing the prestrain-induced bistable effect of two particular tensegrity units. Closed-form expressions of the critical prestrain at which a unit transitions into a bistable regime are derived
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Compositional dependence of spintronic properties in Pt/GdCo films Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Daniel H. Suzuki, Byung Hun Lee, Geoffrey S. D. Beach
GdCo films have been widely used in spintronic applications, owing largely to their tunable degree of ferrimagnetic compensation. However, all key properties likewise depend on the alloy composition, and a systematic study of the interdependent spintronic properties with composition has not been reported. Here, we report the compositional dependence of key spintronic properties, including anisotropy
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Significant efficiency increment of spintronic terahertz emitters by oxygen engineering Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Weiwei Li, Zhangzhang Cui, Yangkai Wang, Hao Cheng, Mo Zhu, Bing Xiong, Jianping Huang, Zheling Shan, Qiuping Huang, Zhengping Fu, Yalin Lu
Spintronic terahertz (THz) emitters have been intensively explored as next-generation sources of THz waves due to their low-cost, nanometer thickness, and broadband spectra. Growing research works are focusing on how to improve the THz emission efficiency, mainly by using a larger spin-Hall angle heavy metal. Currently, the highest intensity spintronic THz emission was based on a CoFeB/Pt heterostructure
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Gain-loss-induced non-Abelian Bloch braids Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Bikashkali Midya
Onsite gain-loss-induced topological braiding principle of non-Hermitian energy bands is theoretically formulated in multiband lattice models with Hermitian hopping amplitudes. Braid phase transition occurs when the gain-loss parameter is tuned across exceptional point degeneracy. Laboratory realizable effective-Hamiltonians are proposed to realize braid groups B2 and B3 of two and three bands, respectively
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Detection of vortex charge and beam displacement by wavefront division interferometry Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Kalipada Chatterjee, Rakesh Kumar Singh, Rajan Jha
In this work, a wavefront division interferometry method for determining the topological charge (l) of vortex beams (VB) is proposed and utilized for the detection of beam displacement. The method uses Fresnel biprism as a single element to determine vortex charge for up to l = ±10. Additionally, the interference pattern configuration is utilized to detect beam displacement in orthogonal directions
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Growth of ultrathin Mn4N epitaxial films on SrTiO3(001) and their thickness-dependent magnetic structures Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Tomohiro Yasuda, Kenta Amemiya, Takashi Suemasu
Mn4N thin films meet the requirements for efficient current-driven magnetic domain wall motion, such as perpendicular magnetic anisotropy and small magnetization. To demonstrate efficient field-free spin–orbit torque (SOT)-driven domain wall motion, the thickness of the Mn4N layer must be reduced. In this study, we focus on the fabrication of Mn4N ultrathin films on SrTiO3(001) substrates and demonstrate
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Scaling analysis for azimuthal spreading and contact time of droplet impacting on superhydrophobic cylindrical surfaces Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 P. T. Naveen, A. R. Harikrishnan
Drop impact on superhydrophobic surfaces has gained great attention because of its physics and application in water repellency, drag reduction, and anti-icing. Spreading lengths and the contact time are the crucial parameters determining the extend of drop–surface interaction and effective heat transfer between the two and are, hence, trivial to many engineering applications. Post-collisional dynamics
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Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, W. V. Lundin, A. F. Tsatsulnikov
We experimentally demonstrate the formation of a superradiant optical mode in the room-temperature reflection spectra from a resonant Bragg structure composed of 30 equidistant GaN quantum wells separated by (Al,Ga)N barriers. The mode arises when the condition of the Bragg diffraction is fulfilled at the wavelength corresponding to the energy of the quasi-two-dimensional excitons in the quantum wells
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Fourfold magnetic anisotropy varied by interfacial exchange coupling in epitaxial Fe/IrMn bilayers Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Xinwei Feng, Yangping Wang, Jing Meng, Haoyu Lin, Xiaoyan Zhu, Yali Xie, Dongmei Jiang, Yang Xu, Tian Shang, Qingfeng Zhan
We report variable in-plane fourfold magnetic anisotropy in epitaxial exchange-biased Fe/IrMn bilayers with different layer thicknesses. The fourfold magnetic anisotropy of the bilayers continuously decreases and even appears negative as the thickness of the Fe layer decreases, indicating a change in the easy axes from Fe 100 to Fe 110, which can be interpreted by the competition between the intrinsic
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Origin of electrical noise near charge neutrality in dual gated graphene device Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Aaryan Mehra, Roshan Jesus Mathew, Chandan Kumar
This Letter investigates low frequency 1/f noise in an hBN encapsulated graphene device in a dual gated geometry. The noise study is performed as a function of top gate carrier density (nTG) at different back gate density (nBG). The noise at low nBG is found to be independent of top gate carrier density. With increasing nBG, noise value increases, and a noise peak is observed near charge inhomogeneity
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Ultra-stable and low-divergence high-power antimonide light emitters with on-chip mode filter Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Jianmei Shi, Chengao Yang, Tianfang Wang, Yihang Chen, Hongguang Yu, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Antimonide semiconductor laser diodes with high brightness are ideal light sources for a variety of applications. However, the traditional structure of broad-area (BA) lasers with high-power output is normally accompanied by a multi-lobed far field profile and large lateral divergence. In this paper, we put up an on-chip microstructure for mode filtering. The excellent mode control capability is doubly
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Combining machine learning and Mie theory to simplify particle characterization inside microchannels Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Amirmohammad Taei, Rouhollah Karimzadeh, Mohammadmehdi Jahanbakhshian
In recent decades, particle characterization has been one of the most widely used achievements. The article presents a method to simplify the setup using unsupervised machine learning techniques, such as K-means, K-medoids, and Hierarchical clustering. Utilizing these three methods together, our approach can accurately measure particle diameter with a precision of 0.1 μm and a refractive index of 0
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Stable Janus monolayer MoSHx (0.5 ≤ x ≤ 2) Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Zhijing Huang, Jose Manuel Perez Aguilar, Shuming Zeng, Yusong Tu, Zonglin Gu
MoSH is a representative example of a Janus two-dimensional monolayered system consisting of a molybdenum atomic layer sandwiched between sulfur and hydrogen atomic layers. Extensive experimental and theoretical efforts have suggested the great promise of the MoSH material, but the validity of the MoSH model (with a Mo–S–H ratio of 1:1:1) remains uncertain. While various experiments have established
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Thermally stable piezoelectric fiber based on perfluoroalkoxy alkane piezoelectret with a lotus root structure Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Lian Zhou, Qianqian Hu, Jiayou Shi, Quan Ling, Yujin Yuan, Tongyan Zhang, Xiaoqing Zhang
Advanced functional fibers, which can endow common textiles with specific functionalities by traditional weaving processes without losing their basic features, including flexibility, breathability, and wash ability, are desired in flexible and wearable devices. However, the performance of piezoelectric wire sensors in previous studies has been unsatisfactory, especially in harsh environments. This
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Two- and three-photon absorption in bulk CuI Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Andreas Müller, Sebastian Henn, Evgeny Krüger, Steffen Blaurock, Harald Krautscheid, Marius Grundmann, Chris Sturm
We report on photoluminescence emission in copper iodide bulk single crystals induced by two- and three-photon absorption around 1.525 eV. These non-linear optical processes are investigated utilizing density-dependent, steady-state, as well as time-resolved photoluminescence spectroscopy as a function of the excitation energy. Using an excitation energy that corresponds to half of the bandgap energy
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Electric field controlled perpendicular exchange bias in Ta/Pt/Co/IrMn/Pt heterostructure Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 Mengxi Wang, Meiling Li, Yunhao Lu, Xiaoguang Xu, Yong Jiang
Perpendicular exchange bias (PEB) is an essential effect of antiferromagnetic materials. It has the advantages over the in-plane exchange bias in application of magnetic random access memory (MRAM) technology, particularly in terms of higher packing density. The influence of the strain effect on PEB of Ta/Pt/Co/Ir20Mn80/Pt multilayers deposited on the piezoelectric substrate is studied in this work
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Non-uniform Gd distribution and magnetization profiles within GdCoFe alloy thin films Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-19 O. Inyang, C. Swindells, D. Rianto, L. Bouchenoire, R. J. H. Morris, A. Merkulov, A. Caruana, C. Kinane, T. P. A. Hase, D. Atkinson
Rare earth (RE):transition metal (TM) ferrimagnetic alloys continue to attract significant attention for spintronics. This work focuses on the elemental distribution of RE and TM elements throughout the thickness of nominally uniform films and the resulting spatial variations of the magnetization within these layers. Samples of CoFe alloyed with Gd were studied using secondary ion mass spectroscopy
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Impact of graphene state on the orientation of III–nitride Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Jeong-Hwan Park, Nan Hu, Mun-Do Park, Jia Wang, Xu Yang, Dong-Seon Lee, Hiroshi Amano, Markus Pristovsek
We attempted to grow (10–13) semi-polar GaN on graphene to confirm the possibility of a remote epitaxy of semi-polar GaN. Single crystalline (10–13) GaN was obtained on an optimized template using optimized growth conditions. However, (10–13), (0002), and other GaN orientations were found under the same growth conditions on a graphene-coated template. Scanning transmission electron microscopy and energy-dispersive
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Directional planar antennae in polariton condensates Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Denis Aristov, Stepan Baryshev, Julian D. Töpfer, Helgi Sigurðsson, Pavlos G. Lagoudakis
We report on the realization of all-optical planar microlensing for exciton–polariton condensates in semiconductor microcavities. We utilize spatial light modulators to structure a nonresonant pumping beam into a plano–concave lens-shape focused onto the microcavity plane. When pumped above condensation threshold, the system effectively becomes a directional polariton antenna, generating an intense
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Metal-ferroelectric AlScN-semiconductor memory devices on SiC wafers Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Yunfei He, Shangyi Chen, Merrilyn Mercy Adzo Fiagbenu, Chloe Leblanc, Pariasadat Musavigharavi, Gwangwoo Kim, Xingyu Du, Jiazheng Chen, Xiwen Liu, Eric A. Stach, Roy H. Olsson, Deep Jariwala
This Letter presents oriented growth and switching of thin (∼30 nm) co-sputtered ferroelectric (FE) aluminum scandium nitride (AlScN) films directly on degenerately doped 4H silicon carbide (SiC) wafers. We fabricate and test metal ferroelectric semiconductor capacitors, comprising of Al/Al0.68Sc0.32N/4H-SiC. Our devices exhibit asymmetric coercive electric field values of −5.55/+12.05 MV cm−1 at 100
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Experimental observation of negative rotational inertia Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Shuanglong Liu, Fei Chen, Tian Yang, Robert G. Parker, Pai Wang, Tianzhi Yang
We report an easy-to-make, resonance-based mechanism to realize negative rotational inertia. The device consists of three parts: a heavy inner core, a lightweight outer shell, and rubber connections between the core and shell. We theoretically predict and experimentally observe the negative rotational inertia in the range of 100–230 Hz. The experimental values are obtained via measurements of vibrational
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Effects of atmospheric UV-O3 exposure of WSe2 on the properties of the HfO2/WSe2 interface Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Maria Gabriela Sales, Alexander Mazzoni, Wendy L. Sarney, Asher C. Leff, Justin Pearson, Sina Najmaei, Stephen McDonnell
Transition metal dichalcogenides (TMDCs), such as semiconducting WSe2, are typically interfaced with a high-quality dielectric layer in device applications. The unreactive basal plane of TMDCs makes the standard technique for deposition of dielectric oxides, atomic layer deposition (ALD), challenging on TMDC surfaces. In this work, we make use of atmospheric ultraviolet–ozone (UV-O3) exposure of WSe2
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High-throughput computation and machine learning of refractive index of polymers Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Ankit Mishra, Pankaj Rajak, Ayu Irie, Shogo Fukushima, Rajiv K. Kalia, Aiichiro Nakano, Ken-ichi Nomura, Fuyuki Shimojo, Priya Vashishta
Refractive index (RI) of polymers plays a crucial role in the design of optoelectronic devices, including displays and image sensors. We have developed a framework for (1) high-throughput computation of RI values for computationally synthesized amorphous polymer structures based on a generalized polarizable reactive force-field (ReaxPQ+) model, which is orders-of-magnitude faster than quantum-mechanical
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Killer defect responsible for reverse leakage current in halide vapor phase epitaxial (011) β -Ga2O3 Schottky barrier diodes investigated via ultrahigh sensitive emission microscopy and synchrotron x-ray topography Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Sayleap Sdoeung, Yuto Otsubo, Kohei Sasaki, Akito Kuramata, Makoto Kasu
In this study, we identify the killer defect responsible for the reverse leakage in the halide vapor phase epitaxial (011) β-Ga2O3 Schottky barrier diode via ultrahigh sensitive emission microscopy, synchrotron x-ray topography, and scanning transmission electron microscopy. A polycrystalline defect was found to be causing a leakage current of −5.1 μA at a reverse bias of −50 V. They were distributed
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, J. Mateos
The detection capability of GaN-based nano-diodes is measured up to 110 GHz in two configuration schemes: voltage and current responsivity. The ratio between both figures of merit allows one to extract the AC resistance of the diode, showing a very flat value in all the frequency spans. An optimization on the geometrical parameters is performed, finding that the narrower the channel, the higher the
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Arbitrary self-rotating beam array generated with the synthetic phase Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Shengxiang Shan, Shuo Liu, Xuejuan Liu, Yan Xiong, Yiping Xu, Shaohua Tao, Wenxing Yang, Shubo Cheng
In this Letter, the phase profile of the self-rotating beam is modified by introducing the radial shift factor c and the azimuthal shift factor θ0. The effect of the radial shift factor c on the corresponding intensity distribution is discussed. The results demonstrate that the focal-field intensity patterns of the modified self-rotating beams with different radial shift factors moved away from the
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Artificial fear neural circuit based on noise triboelectric nanogenerator and photoelectronic neuromorphic transistor Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-18 Shuo Ke, Feiyu Wang, Chuanyu Fu, Huiwu Mao, Yixin Zhu, Xiangjing Wang, Changjin Wan, Qing Wan
Fear neural circuits can recognize precisely threatening stimuli and enable the early-warning for the individual in the real world. In this regard, implementation of fear neural circuits functions by neuromorphic devices could potentially improve the intelligent adaptability and cognition of humanoid robots. Here, an artificial fear neural circuit is proposed, which consists of a noise triboelectric
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Layered semimetal electrodes for future heterogeneous electronics Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-15 Bubunu Biswal, Ramesh Rajarapu, Saroj Poudyal, Renu Yadav, Prahalad Kanti Barman, Manasi Mandal, Ravi Prakash Singh, B. R. K. Nanda, Abhishek Misra
Integration of the emerging layered materials with the existing CMOS platform is a promising solution to enhance the performance and functionalities of the future CMOS based integrated circuits. In this direction, we have experimentally studied the suitability of the layered semimetals, namely, Td-WTe2, 1T′-MoTe2, 1T-PtTe2, and 1T-PtSe2, as an electrode with two most commonly used semiconductors, i
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Electroluminescence hyperspectral imaging of light-emitting diodes using a liquid crystal tunable filter Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-15 Paul R. Edwards, Jochen Bruckbauer, Douglas Cameron, Robert W. Martin
We demonstrate the use of a low-cost liquid-crystal-based wavelength-tunable filter and CMOS video camera to add hyperspectral imaging capabilities to a probe station equipped with a simple optical microscope. The resultant setup is used to rapidly resolve the spectral and spatial variations in electroluminescence typically observed for InxGa1−xN/GaN light-emitting diodes. Applying standard statistical
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Wide-field quantitative magnetic imaging of superconducting vortices using perfectly aligned quantum sensors Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-15 Shunsuke Nishimura, Taku Kobayashi, Daichi Sasaki, Takeyuki Tsuji, Takayuki Iwasaki, Mutsuko Hatano, Kento Sasaki, Kensuke Kobayashi
Various techniques have been applied to visualize superconducting vortices, providing clues to their electromagnetic response. Here, we present a wide-field, quantitative imaging of the stray field of the vortices in a superconducting thin film using perfectly aligned diamond quantum sensors. Our analysis, which mitigates the influence of the sensor inhomogeneities, visualizes the magnetic flux of
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High-resolution reconstruction of spectrum-overlapped off-axis holography by deflecting reference beam of Gaussian symmetry Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-15 Benyong Chen, Jifan Zhang, Liu Huang, Liping Yan
In digital holography, extracting the +1-order spectrum accurately and making full utilization of the spatial bandwidth of the CCD sensor are essential for high-resolution and artifacts-free quantitative phase imaging. In this paper, using the light intensity symmetry of the Gaussian laser beam, we delicately eliminate the zero-order spectrum by means of subtraction of two off-axis hologram spectra
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Ab initio calculations of low-energy quasiparticle lifetimes in bilayer graphene Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Catalin D. Spataru, François Léonard
Motivated by recent experimental results, we calculate from first principles the lifetime of low-energy quasiparticles in bilayer graphene (BLG). We take into account the scattering rate arising from electron–electron interactions within the GW approximation for the electron self-energy and consider several p-type doping levels ranging from 0 to ρ≈2.4×1012 holes/cm2. In the undoped case, we find that
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Manipulating the propagation of ionization wave by pulsed electrical potential in atmospheric plasma jet Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Chenzi Lu, Junlin Fang, Shaofeng Xu, Ying Guo, Jianjun Shi
A noninvasive method was developed to measure the electrical potential in an atmospheric pressure plasma jet. The spatiotemporal evolution of electrical potential was measured by a wire electrode in experiment and simulated by a two-dimensional self-consistent numerical model, which demonstrates that the electrical potential along with the traveling ionization wave outside the discharge tube in ambient
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Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Junwei Hu, Kun Xing, Zhihu Xia, Yimeng Sang, Xiaoping Yang, Tao Tao, Zhe Zhuang, Rong Zhang, Bin Liu
We propose a strain relaxed template (SRT), which consists of an InGaN decomposition layer (DL) and GaN protecting layers grown at three different temperatures as decomposition stop layers (DSLs), to enhance the indium incorporation in quantum wells. The high-temperature growth of the DSL decomposed the InGaN DL and created voids inside to release the strain of the as-grown templates. Although the
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Patterning nucleation area by femtosecond laser in exchange-coupled systems Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 P. Vallobra, Y. Xu, H. Wang, G. Malinowski, M. Hehn, J.-C. Rojas-Sánchez, S. Mangin
Optical control of the exchange bias field in IrMn/[Co/Pt]N heterostructures has been recently demonstrated. We show that this phenomenon can be used to create specific nucleation areas and even decide the preferential direction of propagation of the domain wall inside these preferred areas of nucleation. Using different features of a femtosecond laser, such as the helicity, fluence, and number of
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Spin reorientation induced large spin memory loss at Py/Pd interface Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Zhihao Li, Jingxin Li, Yihao Wang, Junbo Li, Tian Li, Teng Li, Feng Chen, Wei Tong, Liang Cao, Yimin Xiong
Achieving spin current switching functionality is crucial for the development next-generation low power information storage. In this study, the spin reorientation and temperature dependence of spin Hall angle θSH in the Permalloy (Py)/Pd bilayer were investigated by using ferromagnetic resonance, spin pumping, inverse spin Hall effect, and quantum interference transport. The uniaxial ferromagnetic
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Enhanced linearity through high-order antisymmetric vibration for MEMS DC power sensor Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Xuecui Zou, Nizar Jaber, Abdullah Bukhamsin, Usman Yaqoob, Khaled Nabil Salama, Hossein Fariborzi
We present an electric power meter that capitalizes on the interaction of electrothermal strain and mechanical vibration in a micro-electro-mechanical systems (MEMS) beam undergoing the antisymmetric mode of vibration. This is achieved by using a resonant bridge driven with an electrothermal modulation technique. The change in electrical power is monitored through the alteration in the mechanical stiffness
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Electrically modulated photoresponse and optically modulated electroresistance in a ferroelectric heterostructure with PbZr0.2Ti0.8O3 barriers Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Zhuokun Han, Boyong Zhang, Fenglin Wang, Bingcheng Luo, Shuanhu Wang, Wei Zhai, Jianyuan Wang
Ferroelectric heterostructures hold great promise for developing multifunctional memristors and optoelectronic devices. In this study, we report a ferroelectrically modulated photoresponse and optically modulated electroresistance behaviors in the Pt/PbZr0.2Ti0.8O3(PZT)/Nb-doped SrTiO3 (NSTO) heterostructure. The short-circuit photocurrent rises from 28 nA (after poling at +5 V) to 345 nA (after poling
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Growth of magnetooptical cerium-substituted yttrium iron garnet on yttrium aluminum garnet using ion beam sputtering Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Yuki Yoshihara, Kazushi Ishiyama, Toshiaki Watanabe, Pang Boey Lim, Mitsuteru Inoue, Caroline A. Ross, Taichi Goto
Cerium-substituted yttrium iron garnet (Ce:YIG, Ce0.9Y2.1Fe5O12) was epitaxially grown on a (111)-oriented yttrium aluminum garnet (YAG) substrate using radio frequency ion beam sputtering. Magnetic hysteresis loops, transmissivity spectra, and magnetooptical (MO) responses, including Faraday rotation and Faraday ellipticity, were measured. The structural properties of the grown Ce:YIG were characterized
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Revealing the ultrafast spontaneous emission in plasmon-enhanced monolayer semiconductor nano-light sources Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Jiawei Sun, Huatian Hu, Wen Chen, Yuhao Xu, Jibo Tang, Yang Li, Hongxing Xu
Nanoscale spontaneous light sources are promising alternatives to lasers for high-speed optical communications and interconnections through energy-efficient integrated circuits. Yet, developing the spontaneous light sources faster than lasers is hampered by the detection means (e.g., time-resolved fluorescence spectroscopy). Here, by coupling monolayer WSe2 to individual plasmonic nanocavities, we
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Hybrid integration of ensemble nitrogen-vacancy centers in single-crystal diamond based on pick-flip-and-place transfer printing Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Ryota Katsumi, Kosuke Takada, Shun Naruse, Kenta Kawai, Daichi Sato, Takeshi Hizawa, Takashi Yatsui
Incorporating color centers in diamond with mature integrated photonics using hybrid integration techniques such as transfer printing provides a promising route toward scalable quantum applications. However, single-crystal diamond nanostructures fabricated using current etching technologies have triangular bottoms that are unsuitable for conventional pick-and-place integration. Herein, we present an
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MoO3 facilitator enables ultrathin and stabilized Li metal anode for quasi-solid-state batteries Appl. Phys. Lett. (IF 4.0) Pub Date : 2023-09-13 Yanfang Zhai, Zongyuan Chen, Chengyong Liu, Chuying Ouyang, Xiao Liang, Peerasak Paoprasert, Ning Hu, Shufeng Song
Lithium metal is considered as a highly desirable anode for high-energy and safe quasi-solid-state batteries. Nevertheless, the terrible wettability of molten lithium does not permit it to spread out on the lithiophobic current collectors, limiting their practical applications. Herein, we report an ultrathin lithium–molybdenum (Li–Mo) composite anode to settle this hurdle by reacting molten Li with