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Femtosecond laser-plasmon interference lithography for self-organization of extremely regular nanogratings with tunable periodicity Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Ji Yan, Jiao Geng, Xiangwei Liu, Jukun Liu, Liping ShiAchieving laser-induced periodic surface structures with both excellent regularity and high tunability is a challenging task. In this study, we address this challenge by utilizing a hybrid film structure, comprising an amorphous silicon coating on a copper film, to create periodic structures through a photochemical reaction induced by laser-plasmon interference. Our experiments, corroborated by numerical
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1.96 kV p-Cr2O3/ β -Ga2O3 heterojunction diodes with an ideality factor of 1.07 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng ZhangIn this Letter, we report on a p-Cr2O3/n-Ga2O3 vertical heterojunction diode (HJD) with a kilovolt-level breakdown voltage (BV). The chromium oxide (Cr2O3) film was deposited via magnetron sputtering, with a controlled thickness of approximately 20 nm and a hole concentration of 1 × 1016 cm−3. High-resolution transmission electron microscopy of the p-Cr2O3 film reveals a polycrystalline lattice structure
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Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Yanhui Zhang, Haitao Jiang, Zaihong Yang, Liuyan Fan, Ziteng Zhang, Can Zhou, Xiaohao Zhou, Pingping ChenGrowth on patterned graphene/Ge provides a route to improve the film quality of large mismatch heteroepitaxy and simultaneously facilitate the transfer of epitaxial films; however, the growth process and its associated technical challenges remain unclear. In this work, the molecular beam epitaxy (MBE) growth of CdTe films on micro-scale patterned strip-like graphene/Ge (100), containing selective area
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RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu ManjakkalStructural energy storage combines energy storage with structural strength, reducing weight, saving space, and improving efficiency. Among various types, transparent structural energy storage shows strong potential for seamless integration into windows, screens, surfaces, consumer electronics, and automotive applications. Developing new electrode designs with environmentally abundant materials is essential
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An enhancement-mode C-H diamond FET with low work function gate material gadolinia Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing WangEnhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an effective and convenient way to deplete the two-dimensional hole gas and realize the enhancement-mode. In this article, we demonstrate a C-H diamond FET with low work function gadolinia (Gd2O3) gate materials
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Giant correlation, many body and exciton effects in Janus ferrovalley material H-FeClBr Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Chaobo Luo, Zhihui Jiang, Wenchao Liu, Zongyu Huang, Wenjuan Liu, Xiang Qi, Jiayu Dai, Xiangyang PengThe family of transition metal dichlorides are recently found to be ferrovalley materials, exhibiting desirable spontaneous valley polarization that is a key to practical applications. In this work, Janus monolayer H-FeClBr is investigated as a case study by performing first-principles calculations. We focus on the giant correlation and many-body and exciton effects that will essentially modulate the
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Charge localization in optoelectronic and photocatalytic applications: Computational perspective Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Francesco Ambrosio, Julia WiktorCharge localization is an important phenomenon that influences various material properties, including excited-state energetics, charge transport, catalytic activity, and recombination. As such, it has significant implications for optoelectronic and photocatalytic applications. In this Perspective, we begin by addressing the methodological challenges associated with modeling localized charges, highlighting
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Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W) Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying WangMagnetic materials featuring topology and flatband in their electronic structure bridge the topological quantum physics and strongly correlated many-body physics, but materials that manifest this feature are rare. Here, we predict a class of ideal intrinsic magnetic topological insulators naturally featuring a nontrivial flatband in the two-dimensional (2D) honeycomb-kagome lattices X2Rb3 (X=Cr, Mo
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Tunable layer-locked valley Hall effect in ferroelectric-magnetic-valley coupled breathing Kagome bilayer W3Br8 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Yuxin Liu, Fanzheng Chen, Guichao Hu, Xiuwen Zhao, Xiaobo Yuan, Junfeng RenBased on an effective k·p model, we form breathing Kagome bilayers with two different interlayer antiferroelectric (AFE) couplings, i.e., tail to tail and head to head, to study their magnetic and valley properties. Spin–orbit coupling and magnetic exchange interaction induce valley-layer locking when the bilayer is ferromagnetic, however, spin-layer locking appears for the case of antiferromagnetic
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Generation of high and bidirectional out-of-plane spin–orbit torque through vertical magnetization gradient Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Tianli Jin, Yuliang Zhu, Shaomin Li, Bo Zhang, Funan Tan, Gerard Joseph Lim, Jiangwei Cao, Kaiming Cai, Wen Siang LewHigh efficiency and out-of-plane spin–orbit torque (OOP-SOT) driven magnetization switching is essential for developing spin-based memory and logic devices. In this study, we report the generation of a large charge-to-spin conversion and bidirectional OOP-SOT by engineering a vertical magnetization gradient within a Co/Ho multilayer system. Exploiting the antiferromagnetic coupling between Co and Ho
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π /2-periodic planar Hall effect in MnGe thin films Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Zhaohang Li, Fanbao Meng, Kesen Zhao, Xiangyu Hua, Zongyao Huang, Feixiong Quan, Hua Ge, Ziji Xiang, Tao Wu, Wenjie Meng, Yubin Hou, Qingyou Lu, Xianhui ChenThe planar Hall effect (PHE) offers notable advantages in spintronic applications, particularly because of its high signal-to-noise ratio and minimal thermal drift. In this study, we present a tunable PHE in MnGe (111)/Si (111) thin films. Typically, PHE demonstrates π-periodicity as the magnetic field rotates within the plane. Interestingly, we observed that in MnGe thin films, both π- and π/2-periodicities
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Experiments on unidirectional excitation of designer flexural edge waves Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Kun Tang, Qinhao Lin, Yichao Xu, Da Gao, Yuqi Wang, Yibin LiWe demonstrate the unidirectional propagation of structure-induced edge waves in a thin plate. These waves, termed designer flexural edge waves (DFEWs), are observed along the free edge of a thin plate featuring periodically corrugated rectangular grooves. These DFEWs can be activated unidirectionally using either a pair of point sources exhibiting phase differences or a “chiral” source characterized
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Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Miaojia Yuan, Maokun Wu, Yichen Wen, Yilin Hu, Xuepei Wang, Boyao Cui, Jinhao Liu, Yishan Wu, Hong Dong, Feng Lu, Wei-Hua Wang, Pengpeng Ren, Sheng Ye, Hongliang Lu, Runsheng Wang, Zhigang JiThe metal–semiconductor contact resistivity has become a severe challenge for three-dimensional (3D) integration. In this work, starting from the physical origin, we propose that the charge redistribution is an effective strategy for decreasing Schottky barrier height (SBH), subsequently leading to a reduction in contact resistivity. Guided by this perspective, first-principles calculations are utilized
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Synchrotron 3D-RSM reveals the microstructure of superconducting YBa2Cu3O7−x films grown on various substrates Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
Qingyu He, Erhao Peng, Jiquan Zhang, Fucong Chen, Zhongpei Feng, Jiangxiao Li, Xinyan Chen, Yajun Tao, Yueliang Gu, Yongqi Dong, Jie Yuan, Kui Jin, Chen Gao, Zhenlin LuoFurther unleashing the full potential of YBa2Cu3O7−x (YBCO), a premier high-temperature superconductor, for devices in advanced communication technologies hinges on the refinement of its fabrication process. In this work, a synchrotron three-dimension reciprocal space mapping (3D-RSM) technique, which offers a larger Q-space range and higher spatial resolution, was developed and used to analyze YBCO
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Competing polar phases in 2D ferroelectric transition metal thio- and selenophosphates Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
Sabine Neumayer, Huimin Qiao, Nina BalkeThe aim of this Perspective is to provide an in-depth discussion of a certain class of 2D ferroelectrics that feature a van der Waals gap where more than one polar phase can exist energetically close to the ground state. Polar phases of interest can include different ferroelectric, antiferroelectric, and paraelectric phases, which can be transformed into each other through external stimuli, offering
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Microdisk HgCdTe lasers operating at 22–25 μm under optical pumping Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
A. A. Razova, V. V. Rumyantsev, K. A. Mazhukina, V. V. Utochkin, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, D. V. Shengurov, N. S. Gusev, E. E. Morozova, V. I. Gavrilenko, S. V. MorozovLasing from HgCdTe microdisk cavities is demonstrated at wavelengths as long as 20–25 μm. The optical threshold and operation temperature are mainly limited by nonradiative Shockley–Read–Hall type recombination. The employed ion etching technology appears to introduce additional defects in the vicinity of the microdisks, degrading figures of merit as the height of the cavity increases. However, a watt-level
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Negative differential resistance in a family of Fe3X4 (X = S, Se, Te) antiferromagnetic semiconducting nanowires Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Jinchao Kang, Qinxi Liu, Xue Jiang, Jijun ZhaoThe experimentally observed 2D magnets have unlocked the possibility of realizing a stable long-range order in the low-dimensional limit, which also gives a boost to the family of 1D magnets. Recently, a family of Fe-based nanowires has been observed in high-throughput transition metal chalcogenides synthesized by chemical vapor deposition [Zhou et al., Nat. Mater. 22, 450–458 (2023)]. In this work
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Enhanced photoresponse and polarization-sensitive photodetector coupling InGaN/GaN MQW heterojunction with Ag nanoparticles Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Liang Chen, Tingjun Lin, Jixing Chai, Ququ Hao, Lei Lei, Jinrong Chen, Wenliang Wang, Guoqiang LiInGaN-based pin-type visible light photodetectors (PDs), exhibiting enormous advantages of fast photoresponse speed and low noise, have drawn tremendous interest in visible light communication (VLC) applications. However, the insufficient light absorption capacity and low photoelectric conversion efficiency of InGaN-based pin heterojunction hinder the realization of high-sensitivity PDs for achieving
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Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok LeeTo enhance the efficiency and performance of p-type GaN-based power devices (diode, MOSFET) and p-channel transistors (p-FET), forming an Ohmic contact with low specific contact resistance (ρc) at p-GaN can be an effective way. However, the specific contact resistance values of p-GaN remain limited to the range of mid-10−2Ω cm2 due to the low activation ratio of Mg dopants and high work function. Here
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Multifunctional VO2 metasurface thermal emitter with switchable radiation bandwidth and direction Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Fuming Yang, Zhongzhu Liang, Xiaoyan Shi, Jinhuan Li, Zhe Wu, Siyu Guo, Xiangtao Chen, Wenwen Sun, Xintong Wei, Jihui Jiang, Junying LiuThe controllability of the spectral width and intensity of long-wave infrared (LWIR) emission is essential for various applications, including optical stealth, infrared radiation sources, and infrared lasers. Here, we proposed a multifunctional LWIR metasurface emitter with a switchable radiation state, which consists of germanium (Ge) rectangular pair resonators placed on a vanadium oxide (VO2) film
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Enhanced rectification behavior and electrical properties of ZnO:Cu/ZnO heterojunctions via laser-induced doping and annealing treatments Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Yantong Liang, Jin-Cheng Zheng, Huan Xing, Ying Du, Tielong Deng, Huahan Zhan, Junyong Kang, Hui-Qiong WangCu-doped ZnO:Cu/ZnO heterojunctions were fabricated via a three-step laser-induced doping technique. This study systematically investigated the electrical properties, microstructure, elemental valence states, and energy-band alignment of these heterojunctions through multiple analytical techniques. Current–voltage measurements revealed an asymmetric, nonlinear behavior due to the depletion region at
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Thermal evidences for multi-domain coexistence of freestanding VO2 crystalline microbeams with insulator–insulator transitions Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Sunyuan Zhang, Binhe Wu, Chunrui Wang, Jian Zhou, Hao Sun, Wenhan Cao, Huimei YuVanadium dioxide (VO2) exhibits multiple insulating states and complex transitions, both among these states and to a metallic rutile (R) phase. In this study, we investigate freestanding VO2 microbeams that undergo reversible transitions from an insulating triclinic (T) phase to an insulating monoclinic (M2) phase, followed by a transition to the R phase. The latent heat changes associated with these
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Enhancing carrier dynamics via phase manipulation of dual-phase all-inorganic perovskites for high-performance photodetectors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Gaohui Ge, Kai Shen, Fan Cui, Jian Guo, Qiushi Wu, Hao Xu, Shu Min WangCesium lead bromide perovskites have demonstrated enormous potential in detecting applications, benefitting from their excellent optoelectronic properties and environmental stability. However, their intrinsic properties of photoluminescence intensity and carrier lifetime, key to photodetector performance, are still limited with conventional approaches (e.g., material purification and defect passivation)
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First-principles and Monte Carlo simulations of high-entropy MXenes Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Noah Oyeniran, Oyshee Chowdhury, Chongze HuIn this work, we developed a computational framework that integrates first-principles density functional theory (DFT) calculations with Monte Carlo (MC) algorithm to search for the most stable configuration of high-entropy (HE) MXenes. This framework can predict the minimum energy configurations of HE MXenes with interlayer segregation. For instance, DFT/MC simulation indicates that (Ti0.5Cr0.5)4C3
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Biomimetic spider web sensor designed with memristive oscillators for location-resolved disturbance detection Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Wenbo Sun, Yungang Li, Christy G. Jenson, S. M. Sadaf, Qiang Yu, Yiwen Zhang, Xinjun LiuThis article introduces a memristor-coupled oscillatory network utilizing niobium dioxide (NbO2) memristors and a biomimetic spider web structure. It focuses on the dynamic behaviors of single oscillators and small-scale networks within this unique system, particularly emphasizing voltage, current, and frequency characteristics. By strategically applying step voltage signals on a 1 + 3 node single-layer
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Wide gap II-VI diodes with PbTe nano-inclusions for infrared detection and photovoltaics Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Jakub Mateusz Gluch, Michal Szot, Sergij Chusnutdinow, Grzegorz KarczewskiWe report on the fabrication and characterization of p–n diodes made from wide bandgap II-VI semiconductors (p-ZnTe/n-CdTe) containing nano-inclusions of narrow bandgap material (PbTe). The diodes are fabricated by molecular beam epitaxy on semi-insulating GaAs (100) substrates. The PbTe nano-inclusions are formed either as a single layer of PbTe with a thickness of 350 nm or as multilayers built from
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Strong coupling between cavity and flopping-mode qubit beyond direct gate connection in a Si/SiGe triple quantum dot Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Shun-Li Jiang, Tian-Yi Jiang, Tian-Yue Hao, Yong-Qiang Xu, Rui Wu, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping GuoCavity coupled flopping-mode spin qubit is considered as a promising scheme for enabling long-range qubit interactions in large-scale semiconductor quantum computation. In this work, we fabricate a linear Si/SiGe triple quantum dot (TQD) array coupled with a high-impedance TiN coplanar waveguide cavity via the gate of outer quantum dot. By utilizing two adjacent dots within the TQD, we sequentially
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Enhanced Curie temperature in atomically thin perpendicular magnetic anisotropic oxide film through interfacial engineering Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Daolong Liu, Mingzhu Xue, Caihong Jia, Weifeng Zhang, Yongli Yu, Rui Wu, Xucai Kan, Jinbo Yang, Mingliang Tian, Shouguo Wang, Xuegang ChenThe inverse spinel oxide NiCo2O4, known for its high Curie temperature, low resistivity, and perpendicular magnetic anisotropy, is a promising candidate for the development of next-generation spintronic devices. However, reducing the thickness of the NiCo2O4 film to a few atomic layers degrades its room temperature magnetic and electrical properties, limiting its practical application. In this study
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Ultra-long-range Bessel beams via leaky waves with mitigated open stopband Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
E. Negri, F. Giusti, W. Fuscaldo, P. Burghignoli, E. Martini, A. GalliOpen stopband (OSB) mitigation techniques are commonly used to improve the far-field radiating properties of leaky-wave antennas based on periodic structures. Recently, leaky waves have been proposed to focus energy in the near field through Bessel beams. However, the focusing character of Bessel beams is notably limited to a maximum distance known as the nondiffractive range. In this work, an OSB
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Single-shot Fourier ptychography using polarization-encoded illumination Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Hansol Yoon, Hyesuk Chae, Kyung Chul Lee, Kyungwon Lee, Seung Ah LeeFourier ptychography (FP) is widely adopted for label-free, high-resolution quantitative phase imaging (QPI) of biological samples. However, its imaging speed is limited by the need for multiple acquisitions. In this work, we propose a single-shot FP technique that uses linear polarizers to encode multiple illumination wavevectors and a polarization camera to capture multiple sets of information simultaneously
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Decoding the effect of defect and domain on piezoelectric properties of K0.5Na0.5NbO3-based single crystals Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Chenggong Xiang, Zhiyong Liu, Pu Mao, Kun Guo, Bing Xie, Zhiguo Wang, Longlong ShuThe ultra-high piezoelectric activity of K0.5Na0.5NbO3 (KNN)-based single crystals with excellent electromechanical coupling characteristics has attracted great interest. However, the growth of KNN-based single crystals is restricted by their high melting point and harsh equipment conditions. In this work, a large-sized single crystal of (K0.5Na0.5)0.994Bi0.006Nb0.998Cu0.004O3 (KNNBC) was grown using
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Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Yanpeng Song, Guangxing Wan, Xiaomeng Liu, Junjie Li, Hailing Wang, Xinhe Wang, Kuanrong Hao, Z. Bai, Xiangsheng Wang, Zhenzhen Kong, Junfeng Li, Jun Luo, Yongkui Zhang, Huilong Zhu, Chao Zhao, Guilei WangThis paper presents a comprehensive study of silicon germanium (SiGe) cladded channels for stacked nanowires (NWs), focusing on morphological control and strain engineering to enhance device performance. High-resolution transmission electron microscopy (TEM) was used to characterize the Si NWs and SiGe cladding morphology. The results demonstrate that the morphology of SiGe cladding can be controlled
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Black phosphorene-enhanced Raman spectroscopy for sensitive detection of DNA nucleotides Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Ferdinand Nouaye, Mohammed Amlieh, Soukayna Boulaassafre, Younes Akabli, Sidi Abdelmajid Ait Abdelkader, Afaf Yaden, Vivek Chaudhary, Reda Ben Mrid, Rachid El Fatimy, Abdelouahad El FatimyIn this study, we propose black phosphorene (BP) for surface-enhanced Raman spectroscopy of DNA nucleotides. BP-enhanced Raman spectroscopy provides superior enhancement compared to other 2D materials, such as graphene and molybdenum disulfide, for biomolecular detection. We show that BP significantly amplifies the Raman signals of DNA nucleotides, enabling more sensitive and accurate detection of
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Two-terminal photovoltaic neuromorphic device with temporal dynamics for reservoir computing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Hong Fang, Jie Wang, Shuanger Ma, Le Zhao, Zhiping Liu, Fang Nie, Weiming Lü, Limei ZhengPhotovoltaic (PV) neuromorphic devices with photocurrents under illumination as readouts have gained increasing attention due to their ultralow latency and excellent energy efficiency during reading process. However, they face significant challenges in processing temporal data because of the lack of inherent temporal dynamics, limiting their application in reservoir computing (RC) systems. Here, we
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Uncovering the modest hole mobility for the intrinsic single crystal CsPbBr3 by variable-temperature time of flight measurement Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Hao Yan, Gang Cao, Junqiang Wang, Chengqian Zhong, Shaohan Wang, Juan Qin, Fangxiong Tang, Minghao Cui, Yike Luo, Wenzhen Wang, Yan Zhu, Junfeng Chen, Run Xu, Linjun WangCsPbBr3 single crystal is a promising candidate for room temperature radiation detector. However, the experimental mobilities reported exhibit considerable discrepancy, ranging widely from 10 to 4500 cm2/(V · s) at room temperature. Here, vertical Bridgman grown CsPbBr3 single crystal has been used to measure the mobility accurately using pulse-biased time-of-flight method. The hole mobility for CsPbBr3
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Study on the difference in formation mechanism and demagnetization process between core–shell and reverse core–shell structures of sintered Nd-Fe-B magnets diffused with Tb Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Wendi Zhang, Dunbo Yu, Weibin Cui, Xiaojun Sun, Yuanfei Yang, Xiao Lin, Qingjia Wang, Yang Luo, Zilong WangDuring the grain boundary diffusion (GBD) of Tb, the core–shell and reverse core–shell structures are the two main microstructures influencing the magnetic properties of the sintered Nd-Fe-B magnets. These two microstructures are all composed of the (Nd, Tb)2Fe14B phase, but the formation mechanisms are different. The difference in formation mechanism of the core–shell and reverse core–shell structures
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Loss tangent fluctuations due to two-level systems in superconducting microwave resonators Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
André Vallières, Megan E. Russell, Xinyuan You, David A. Garcia-Wetten, Dominic P. Goronzy, Mitchell J. Walker, Michael J. Bedzyk, Mark C. Hersam, Alexander Romanenko, Yao Lu, Anna Grassellino, Jens Koch, Corey Rae H. McRaeSuperconducting microwave resonators are critical to quantum computing and sensing technologies. Additionally, they are common proxies for superconducting qubits when determining the effects of performance-limiting loss mechanisms such as from two-level systems (TLSs). The extraction of these loss mechanisms is often performed by measuring the internal quality factor Qi as a function of power or temperature
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Forward bias stress-induced degradation mechanism in β-Ga2O3 SBDs: A trap-centric perspective Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Sijie Bu, Yingzhe Wang, Xuefeng Zheng, Shaozhong Yue, Danmei Lin, Longbing Yi, Vazgen Melikyan, Xiaohua Ma, Yue HaoThis study explores the impact of constant forward electrical stress on beta-gallium oxide (β-Ga2O3) Schottky barrier diodes (SBDs) from the prospective of defect evolution. Prolonged stress significantly increased the reverse leakage current density (JR) and forward current density (JF) under small bias and decreased the turn-on voltage (Von). Temperature-dependent current-voltage (I-V-T) analysis
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Enhancing the circular photogalvanic effect in double Weyl semimetals via symmetry breaking Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Tongshuai Zhu, Hao Ni, Dinghui Wang, Zhilong Yang, Guohui Zhan, Baojun WeiWeyl semimetals have emerged as a hot topic in condensed matter physics in last decade. Beyond their intriguing electrical transport phenomena, such as the negative magnetoresistance driven by the chiral anomaly and the anomalous Hall effect, they also exhibit intriguing second-order optoelectronic responses, such as the circular photogalvanic effect (CPGE). In this Letter, we investigate the CPGE
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Biorealistic response in a technology-compatible graphene synaptic transistor Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Anastasia Chouprik, Elizaveta Guberna, Islam Mutaev, Ilya Margolin, Evgeny Guberna, Maxim RybinArtificial synapse is a key element of future brain-inspired neuromorphic computing systems implemented in hardware. This work presents a graphene synaptic transistor based on all-technology-compatible materials that exhibits highly tunable biorealistic behavior. It is shown that the device geometry and interface properties can be designed to maximize the memory window and minimize power consumption
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Low two-level-system noise in hydrogenated amorphous silicon Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Fabien Defrance, Andrew D. Beyer, Jordan Wheeler, Jack Sayers, Sunil R. GolwalaAt sub-Kelvin temperatures, two-level systems (TLSs) present in amorphous dielectrics source a permittivity noise, degrading the performance of a wide range of devices using superconductive resonators such as qubits or kinetic inductance detectors. We report here on measurements of TLS noise in hydrogenated amorphous silicon (a-Si:H) films deposited by plasma-enhanced chemical vapor deposition in superconductive
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Polarization-dependent spin wave channels in antiferromagnetic magnonic crystals Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Zhan Lv, Zhi-ming Yan, Zhi-xiong Li, Xi-guang Wang, Yao-zhuang Nie, Qing-lin Xia, Xiu-feng Han, Guang-hua GuoWe theoretically study the spin wave (SW) band structures in antiferromagnetic magnonic crystals formed by applying periodically modulated magnetic fields. We find that when the magnetic field is symmetric, the SW bands with different polarization are degenerate. However, if we consider an asymmetric magnetic field, the degeneracy of the SW bands is lifted due to the breaking of time-reversal symmetry
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Spin-orbit torque switching in Co/Ni multilayers with strong domain wall pinning Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Quwen Wang, Zetong Li, Qian Zhao, Bin He, Tengfei Zhang, Zimu Li, Chenbo Zhao, Jianbo Wang, Qingfang Liu, Guoqiang Yu, Jinwu WeiSpin–orbit torque (SOT) switching is a promising candidate mechanism to be applied in the spintronic devices. Here, we report the SOT switching in the [Co/Ni] × n multilayers with maze domain structures. The experimental results show that the SOT switching efficiency strongly depends on the magnetic structure of the ferromagnet (FM) layer. With the increase in cycle number of [Co/Ni] × n multilayers
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Predicting a metallic carbon allotrope: Pop-graphite via Na–C compounds Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Chun-Mei Hao, Shicong Ding, Bo Xu, Fei Li, Ming-Xing Huang, Xiao Dong, Zhisheng Zhao, Guochun Yang, Xiang-Feng Zhou, Yongjun TianCarbon allotropes continue to captivate research interest due to their structural diversity and remarkable properties. While diamond-like carbon structures have been extensively studied, bulk graphite-like, layer-structured allotropes remain relatively unexplored and experimentally elusive. Here, we proposed a hitherto unknown layered carbon structure, designated as pop-graphite, synthesizable from
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Electrohydrodynamic direct writing of high-resolution PVA hydrogels via thermally induced sol-gel transition Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Li Sun, Yutao Xiu, Xiaobo Wen, Linyuan Xue, Kunyue Xing, Zihan Zheng, Bing Liang, Jiyao Xing, Dongming XingPolyvinyl alcohol (PVA)-based hydrogels have received a lot of attention due to their superior biocompatibility and versatile applications. However, the fabrication of structurally complex hydrogels at high resolutions (<100 μm) remains challenging, mainly due to limitations in traditional methods such as casting and extrusion-based 3D printing. This work proposes sol-gel electrohydrodynamic direct
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Bouncing–pinning criterion for a drop impacting on a superhydrophobic surface Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
K. K. Krishnaram, Sharma Rahul, P. T. Naveen, A. R. HarikrishnanDrop impact on non-wetting surfaces has garnered significant interest due to its potential applications in water repellency, drag reduction, self-cleaning, and anti-icing. However, there are instances where a droplet fails to rebound from a superhydrophobic surface. It has been reported that the combined effect of gravito-capillary length and visco-capillary length determines the pinning–bouncing criteria
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An on-chip compact Chebyshev filter for semiconductor quantum dots in cQED architecture Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Ze-Cheng Wei, Song-Yan Deng, Zi-Qing Huang, Yuan Kang, Zong-Hu Li, Yong-Qiang Xu, Ran-Ran Cai, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping GuoCircuit quantum electrodynamics (cQED) architecture enables long-range qubit coupling and nondemolition readout, with a key requirement of a small resonator photon leakage rate, κ. Several types of low-pass on-chip LC filter designs have been proposed to mitigate κ. However, the non-flat frequency response in the passband introduces waveform distortion, which may degrade qubit performance. In this
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Temperature-dependent defect dipoles polarization of (La, Nb) co-doped TiO2/PEI microwave absorption materials Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Xiao-Bin Zhou, Wen-Wen Wu, Rui Li, Zhuo Wang, Yue-Chan Song, Lu-lu Han, Wen-Peng Liao, Li-Ling Liu, Zhen-Hao Han, Xiao-Ming Chen, Peng LiuPoint defect engineering has emerged as a key strategy to pursue efficient microwave absorption (MA) by effectively balancing impedance matching and polarization loss. Nevertheless, the detailed interplay between the temperature-driven dielectric relaxation characteristics and the absorption dissipation mechanisms remains an area that requires deeper exploration. Here, (La0.5Nb0.5)xTi1-xO2/polyetherimide
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Cs microcell optical reference at 459 nm with short-term frequency stability below 2 × 10−13 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
E. Klinger, C. M. Rivera-Aguilar, A. Mursa, Q. A. A. Tanguy, N. Passilly, R. BoudotWe describe the short-term frequency stability characterization of external-cavity diode lasers stabilized onto the 6S1/2−7P1/2 transition of Cs atoms at 459 nm, using a microfabricated vapor cell. The laser beatnote between two nearly identical systems, each using saturated absorption spectroscopy in a simple retroreflected configuration, exhibits an instability of 2.5 × 10−13 at 1 s, consistent with
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Application of probabilistic bits in measurement and sensing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Yunwen Liu, Jiang XiaoWe introduce a data-driven measurement and sensing paradigm that capitalizes on the limited sensing capabilities of probabilistic bits (p-bits). Unlike traditional methods that rely on the high quality of individual devices, our approach achieves high precision through the extensive data collected from a large ensemble of p-bits. We demonstrate the feasibility of using magnetic tunnel junction-based
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Megahertz cycling of ultrafast structural dynamics enabled by nanosecond thermal dissipation Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Till Domröse, Leonardo da Camara Silva, Claus RopersLight–matter interactions are of fundamental scientific and technological interest. Ultrafast electron microscopy and diffraction with combined femtosecond-nanometer resolution elucidate the laser-induced dynamics in structurally heterogeneous systems. These measurements, however, remain challenging due to the brightness limitation of pulsed electron sources, leading to an experimental trade-off between
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Impact ionization coefficients and excess noise characteristics of Al0.85Ga0.15As0.07Sb0.93 on GaSb substrate Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
N. Gajowski, M. Muduli, T. J. Ronningen, S. KrishnaWe report the multiplication properties of Al0.85Ga0.15As0.07Sb0.93 for use in separate absorption charge and multiplication avalanche photodiode lattice matched to a GaSb substrate. The demonstration of a high gain, low excess noise multiplier lattice matched to GaSb is a critical step toward high performance avalanche photodiodes operating at wavelengths exceeding 2 μm. We have measured impact ionization
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Controllable ferromagnetism in Cr2Te2 monolayer with intrinsic half-metallicity Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Ruishan Tan, Yunpeng Yang, Zesen Lei, Cuiru Sun, Yuanpeng Ma, Dongna Feng, Tao Jing, Qilong SunTwo-dimensional (2D) magnetic materials with high spin polarization and controllable magnetic anisotropy energy (MAE) are critical for advancing spintronic technologies. Using first-principles calculations, we demonstrate that monolayer Cr2Te2 exhibits intrinsic dynamic/thermal stability, half-metallicity, and robust ferromagnetic ordering. The Curie temperature (Tc) can be elevated from 90 to 190
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Hot-carrier photocatalysts with energy-selective contacts based on quantum wells and dots Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Shuanglong Han, Zhiqiang Fan, Ousi Pan, Xiaohang Chen, Zhimin Yang, Yanchao Zhang, Jincan Chen, Shanhe SuTwo types of hot-carrier photocatalysts (HCPCs) based on quantum well and quantum dot energy-selective contacts (ESCs) have been proposed. The transport equations for both types of devices are derived using the ballistic transport theory. The electrocatalytic behavior of reaction sites in water splitting is modeled by using the Butler–Volmer equation. The impacts of the ESC parameters, including the
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Realization of high power factor in polycrystalline In doped Sb2Te3 thin films for wearable application Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Wenyu Yang, Yiming Zhong, Dongwei Ao, Dong Yang, Meng Wei, Fu Li, Yuexing Chen, Guangxing Liang, Jingting Luo, Zhuanghao ZhengTe-based materials exhibit outstanding thermoelectric performance at room temperature, promising candidates for the fabrication of the wearable electronic devices and chip-sensor of internet-of-things. In this work, a combination of magnetron co-sputtering and post-tellurization methods was used to prepare In doped Sb2Te3 thin films. A high carrier concentration is ascribed to the increase in the density
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Thick-AlN-barrier AlN/GaN-based HEMTs with superior power and noise performance for low-voltage RF front-end applications Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Haochen Zhang, Mingshuo Zhang, Hu Wang, Xinchuan Zhang, Hui Zhang, Chengjie Zuo, Yansong Yang, Yi Pei, Haiding SunHerein, we report a thick-AlN-barrier (TAB) based AlN/GaN RF HEMT with remarkable power performance at low voltage for sub-6G applications. Featuring a 7 nm AlN barrier layer and the regrown n+-GaN Ohmic contacts, the device shows low sheet and contact resistances, leading to 1.6-A/mm output current, 3-V knee voltage, and consequent 75% power-added efficiency (PAE) and 1.3-W/mm output power density
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Secondary electron emission characteristics of 3D-printed ceramic insulators with functionally graded lattice structures Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Chao Wang, Yu-Long Yang, Xin-Ru Shi, Wen-Dong Li, Guang-Yu Sun, Si-Le Chen, Song-Lin Ran, Guan-Jun Zhang, Zhao-Quan ChenThe presence of a macroscopic interface between ceramic insulators and vacuum inevitably leads to multipactor under high electric fields, which is a significant threat to various electronic and electrical devices, as it is typically regarded as a precursor to electrical breakdown. In this study, we report a strategy using functionally graded lattice structures (FGLS) to manipulate the multipactor of
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Orbital torque in Mn/FM bilayer systems Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Yang Zhou, Fei Wei, Wenjun Zhang, Zhixiang Ren, Gengtao Chen, Hui Li, G. Han, S. KangWe investigate the orbital torque generated in ferromagnetic (FM)/manganese (Mn) bilayer systems based on angular-dependent spin-torque ferromagnetic resonance (ST-FMR) experiments. From the ST-FMR results, it is found that a relatively large out-of-plane anti-damping torque can be obtained in Ni/Mn bilayers. The Gilbert damping constant, derived from the resonant linewidth of frequency-dependent ST-FMR
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Probing near-field heating effects on monolayer MoS2 photoluminescence via tip-enhanced Raman spectroscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Kishore K. Madapu, C. Abinash Bhuyan, Sandip DharaThe photoluminescence (PL) intensity of monolayer MoS2 is limited by weak optical absorption due to its atomic scale thickness. To enhance PL intensity, field enhancement techniques, such as surface plasmon resonance (SPR) of metal nanoparticles, are often employed. However, SPR-induced light confinement at the nanoscale also leads to significant localized heating. In this study, we investigated the
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Electric control of oxygen vacancies in homo-ferroelectric-domain BiFeO3 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-24
Xi Shen, Qinwen Guo, Xianghan Xu, Xiangfei Li, Ying Meng, Luyao Wang, Haoyu Zhuang, Richeng Yu, Sang-Wook CheongAlthough the performance of BiFeO3 (BFO) films has been extensively and deeply studied, further exploration is still needed to understand the correlation between a ferroelectric single domain and high performance in BFO single crystals. Therefore, we conduct the biased in situ transmission electron microscopy experiments on the electrical transport properties of BFO single crystals with single domains