-
Low crosstalk modular flip-chip architecture for coupled superconducting qubits Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Soeren Ihssen, Simon Geisert, Gabriel Jauma, Patrick Winkel, Martin Spiecker, Nicolas Zapata, Nicolas Gosling, Patrick Paluch, Manuel Pino, Thomas Reisinger, Wolfgang Wernsdorfer, Juan Jose Garcia-Ripoll, Ioan M. PopWe present a flip-chip architecture for an array of coupled superconducting qubits, in which circuit components reside inside individual microwave enclosures. In contrast to other flip-chip approaches, the qubit chips in our architecture are electrically floating, which guarantees a simple, fully modular assembly of capacitively coupled circuit components, such as qubit, control, and coupling structures
-
Sputtered tantalum oxynitride electron-selective contact for silicon solar cells Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Wenhao Li, Kun Gao, Shibo Wang, Wei Shi, Fengxian Cao, Wenhao Li, Haicheng Li, Xiang Chen, Jun Zhou, Peng Xie, Yao Li, Xinbo YangWide bandgap metal compound-based carrier-selective contacts have been intensively investigated for crystalline silicon (c-Si) solar cells. In this work, we develop the electron-selective contact tantalum oxynitride (TaOxNy) deposited via magnetron sputtering. The effect of deposition parameters (N2 concentration, power, and pressure) on the optoelectronic properties of TaOxNy is investigated. The
-
Performance of 3 cm3 ion trap vacuum package sealed for 10 years Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
D. A. Thrasher, P. D. D. SchwindtMiniature atomic clocks based on the interrogation of the ground state hyperfine splitting of buffer gas cooled ions confined in radio frequency Paul traps have shown great promise as high precision prototype clocks. We report on the performance of two miniature ion trap vacuum packages after being sealed for as much as 10 years. We find the lifetime of the ions within the trap has increased over time
-
Enhancing spin–orbit torque in tri-layer devices with an ultra-thin light metal spacer Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Durgesh Kumar Ojha, Liang-Juan Chang, Yu-Hui Wu, Wen-Yueh Jang, Yuan-Chieh TsengThe discovery of spin current generation through an additional ferromagnetic layer has unlocked new possibilities for spin–orbit torque (SOT) devices, particularly in tri-layer SOT configurations. This breakthrough facilitates field-free switching (FFS) with perpendicular magnetic anisotropy (PMA) under the influence of z-polarization. Despite this progress, a significant challenge persists in lowering
-
Porous W2N fibrous nanograins and TiN nanopyramid framework for high-energy density flexible asymmetric supercapacitors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Rajesh Kumar, Bhanu Ranjan, Davinder KaurEnhancing the energy density of flexible asymmetric supercapacitors (ASCs) necessitates developing and implementing high-performance anode materials for technological developments in wearable energy storage systems. Tungsten nitride (W2N) offers enormous potential as an anode material for ASCs, ascribed to its substantial specific capacitance, massive electrical conductivity, and extended negative
-
Ionization effects in single-shot carrier-envelope phase detection with gas-gap devices Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Johannes Blöchl, Maximilian F. Seeger, Hartmut Schröder, Minjie Zhan, Alexander Guggenmos, Thomas Nubbemeyer, Matthias F. Kling, Boris BerguesThe carrier-envelope phase (CEP) is a key parameter for attosecond waveform control of ultrashort laser pulses. For laser systems with high repetition rates, however, single-shot CEP detection is still challenging. Building on recent findings on phase detection with electric current generation in gases, we show that with an optimized detection method, a long-term stable single-shot phase detection
-
Heterostructure-induced modulation of optical anisotropy in ReSe2 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Zhihao Zhang, Yang Zhang, Ling-xiu Chen, Xiaoxiao Wang, Shenbo Zhu, Yue Yu, Xiao-lan Xue, Chuan-lei Jia, Li-wei ShiThe precise identification of the optical anisotropy principal axis and the controlled modulation of optical anisotropy in low-dimensional semiconductor materials are critical for advancing polarization optoelectronic devices. This paper introduces an enhanced reflectance difference spectroscopy imaging technique that can simultaneously determine the optical anisotropy principal axis of ReSe2 across
-
Single-pixel imaging through random media with automated adaptive corrections Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Yining Hao, Yin Xiao, Wen ChenThe existence of random media is challenging in optical imaging, as the existing approaches usually cannot work well when the optical channel exhibits a certain level of randomness. Here, we report an automated adaptive correction scheme for single-pixel imaging through random media. An alternating projection method is developed to reconstruct an object from light intensities recorded by a single-pixel
-
Ag-doped capsule-like tungsten oxide with controllable band structure and oxygen vacancy for highly efficient triethylamine sensing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Hui Liang, Yan Liu, Jiuyu Li, Hu Ma, Ruihua Zhao, Jianping DuThe detection and portable monitoring of organic amine is necessary for hazardous substance warning, life, and health. Herein, capsule-like tungsten oxide nanoparticles (NPs) were prepared to detect triethylamine, and the gas-sensing property is further enhanced by adjusting oxygen vacancy and band structure by doping tungsten oxide with Ag NPs. As-prepared nanomaterial consists of well-dispersed nanoparticles
-
Voltage-controlled half adder via magnonic inverse design Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Ze Chen, Gerard Joseph Lim, Calvin Ching Ian Ang, Tianli Jin, Funan Tan, Bryan Wei Hao Cheng, Wen Siang LewIn this work, we report a magnonic device capable of dynamic control over magnon propagation. By leveraging voltage-controlled magnetic anisotropy on yttrium iron garnet waveguides, we have carried out simulations of an active demultiplexer and half-adder designed using inverse design principles. A high output intensity multiplexer was similarly developed via inverse design to mitigate the magnon re-emission
-
Ultrafast quasiparticle relaxation dynamics in the topological materials LaSbTe and CeSbTe Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Liye Cao, Cuiwei Zhang, Yi Yang, Lei Wang, Yanghao Meng, Bixia Gao, Feng Jin, Xinbo Wang, Youguo Shi, Rongyan ChenWe utilize ultrafast time-resolved pump-probe spectroscopy to investigate photoinduced quasiparticle dynamics in the topological materials LaSbTe and CeSbTe. Our results reveal that the relaxation dynamics in both materials are characterized by two distinct decay channels. In LaSbTe, the amplitude of the photoinduced reflectivity related to the first decay channel exhibits two pronounced peaks at 163
-
Investigation of channel material purity in fully depleted silicon-on-insulator transistors designed for qubit applications Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Philippe Ferrandis, Thomas Bédécarrats, Mikael CasséSilicon holds significant potential as a material for future quantum processors. Transistors built in silicon-on-insulator technology and functioning as silicon qubit devices can be fabricated using industry-standard processes, allowing for easy integration with classical control hardware. However, achieving precise management of carrier transfer within the transistor channel is essential, requiring
-
High endurance and low coercive voltage ferroelectric tunnel junction by electrode engineering Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Yefan Zhang, Xiaopeng Luo, Xiao Long, Peng Yang, Shihao Yu, Yang Liu, Zihao Hou, Wei Wu, Sen Liu, Zhiwei Li, Yi Sun, Qingjiang LiIn this paper, we report a high endurance and low coercive voltage (Vc) ferroelectric tunnel junction (FTJ) device by replacing the TiN top electrode with W electrode after annealing. This method implants a TiNOx thin layer, which reduces leakage current and increases breakdown voltage (Vbd), leading to better device endurance. It can also effectively promote the formation of orthogonal phase and inhibit
-
The influence of contact resistance and interface layers in extraordinary magnetoresistance devices Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Sreejith Sasi Kumar, Lou Bork, Stefan Pollok, Rasmus Bjørk, Dennis Valbjørn ChristensenThe electrical resistance change of a device when subjected to applied magnetic fields is essential for magnetoresistive magnetometers as well as for studying fundamental transport phenomena in condensed matter. One of the largest magnetoresistances at room temperature is observed in extraordinary magnetoresistance (EMR) devices composed of high-mobility materials with metal inclusions. However, the
-
Surface photosensitization enabled by embedded plasmonic nanoparticles in ferroelectric crystals for laser-induced periodic surface structures Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Zhixiang Chen, Quanxin Yang, Ning Lu, Xingjuan Zhao, Shengqiang Zhou, Hongliang Liu, Karsten Buse, Yuechen Jia, Feng ChenDielectric crystals, despite their rich optical properties and great potential in integrated optoelectronics, had generally fallen behind the competing photonic platforms, mainly due to the significant difficulties of material processing. By combining the unique capabilities of ion implantation in photosensitization and femtosecond laser direct writing (FsLDW) in nanostructuring, in this study, we
-
Enhanced thermoelectric performance by Hf substitution in p-type half-Heusler TiNi0.8Co0.2Sn Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-04
Masashi Mikami, Hidetoshi Miyazaki, Yoichi NishinoThe half-Heusler TiNiSn alloy is a promising candidate for thermoelectric power generation, capable of directly converting waste heat into electric power, due to its high thermoelectric performance over a wide temperature range from 500 to 1000 K. However, the thermoelectric performance of p-type TiNiSn is much lower than that of its n-type counterpart. Here, we demonstrate that Hf substitution in
-
Highly oriented and wafer-scale exfoliation of h-BN grown on AlN by metalorganic chemical vapor deposition Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-03
Qichao Yang, Jiaxin Liu, Yiwei Duo, Jingnan Dong, Ziqiang Huo, Jiankun Yang, Junxue Ran, Junxi Wang, Peng Gao, Junjie Qi, Tongbo WeiHexagonal boron nitride (h-BN) and aluminum nitride (AlN) are highly suitable for the development of flexible nitride-based ultraviolet devices. However, there are limited reports on the integration of high-quality h-BN within III-nitride systems. We have fabricated thickness-controllable h-BN on a step-flow AlN template using a two-step growth method through metalorganic chemical vapor deposition
-
Phase-locked single pixel imaging Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-03
Junquan Sun, Yongkai Yin, Baoqing SunSingle-pixel imaging, which is recognized for its high sensitivity and wide spectral range, has a great potential for development in many fields. However, noise from ambient light and detector poses great challenges to its application. In this work, we present a phase-locked single pixel imaging (PL-SPI) technique that uses a lock-in amplifier (LIA) as detector. With the assistance of tunable illumination
-
Monitoring thermal evolutions of 2D layered semiconductor/polymer heterostructure with ultrafast photoacoustic spectroscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Feiyang Hou, Yujie Wang, Zhen Yue, He Zhang, Chaoyang Huang, Xiaoxuan Wang, Chunxiang Xu, Qiannan CuiUtilizing 2D layered semiconductor as ultrafast photoacoustic transducer, we all-optically generate and track the propagation of picosecond acoustic pulses in 2D layered semiconductor/PMMA thin-film heterostructure via femtosecond laser pump-probe. By varying the environmental temperatures and the incident direction of pump laser pulse, the acoustic velocity of PMMA thin-film has been in situ monitored
-
Tunable magneto-optical Kerr effect in two-dimensional non-collinear antiferromagnetic material HfFeCl6 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Di Zhou, Ning Ding, Haoshen Ye, Shuai Dong, Shan-Shan WangWith the development of two-dimensional (2D) magnetic materials, the magneto-optical Kerr effect (MOKE) is widely used to measure ferromagnetism in 2D systems. Although this effect is usually inactive in antiferromagnets (AFM), recent theoretical studies have demonstrated that the presence of MOKE relies on the symmetry of the system and antiferromagnets with noncollinear magnetic order can also induce
-
Nonlinear response of microwave impedance microscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Amogh Yogesh Waghmare, Joshua Bromley, Jun-Yi Shan, Eric Y. MaMicrowave impedance microscopy (MIM) is an emerging scanning probe technique that allows non-contact measurement of local linear complex permittivity with nanometer spatial resolution. In this work, we extend traditional MIM to nonlinear operation to probe local electrical nonlinearity. We develop a quantitative framework relating the multi-harmonic MIM signals to nonlinear tip–sample admittance using
-
Dual-gradient multilayer ultra-microperforated panel composite for ultra-broadband and quasi-perfect sound absorption Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Yujie Qian, Bingxu Li, Jie ZhangThis study proposes and experimentally validates a multilayer composite acoustic absorber based on ultra-microperforated panels with a dual-gradient configuration, incorporating decreasing pore diameters and perforation ratios across multiple layers. The innovative design achieves ultra-broadband, wide-angle, and near-perfect sound absorption, with absorption coefficients exceeding 0.98 over a wide
-
Transport properties of graphene/MoS2 heterostructure device in the low carrier density regime at cryogenic temperatures Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Muhammad Atif Khan, Hanul Kim, Hye Jung Kim, Aram Yoon, Zonghoon Lee, Christopher J. B. Ford, Gil-Ho KimWe explore the transport characteristics of a graphene–MoS2 heterostructure transistor in the low carrier density regime at cryogenic temperatures, specifically between 30 and 50 K. The device exhibits persistent current oscillations between two distinct levels, which we attribute to the trapping and de-trapping of charge carriers in defect states within the forbidden bandgap. These oscillations show
-
Permittivity and remanent polarization contributions to the electrocaloric effect in (Ba, Sr)TiO3 under unipolar field Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Yukiya Tanaka, Ryo Iguchi, Takashi Teranishi, Shinya Kondo, Akira KishimotoThe electrocaloric effect (ECE)-induced temperature change (ΔT) in (Ba, Sr)TiO3-based ferroelectrics under unipolar electric fields was analyzed from the separate contributions of the dielectric constant (ε) and remanent polarization (Pr) based on the Maxwell relation. Consideration of the contributions of both ε and Pr is particularly important in a unipolar electric field operation, such as on/off
-
Rydberg communication antennas with self-decoupling for dynamic radar interference based on heterodyne technology Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Ge Gao, Minze Chen, Haonan Feng, Zhiao Zhu, Aobei Chen, Zhonghuai Wu, Tianqi Mao, WeiDong Dai, Peng Peng, Dezhi ZhengThe Rydberg atomic communication antenna exhibits exceptional properties superior to traditional antennas. The use of heterodyne technology further establishes a foundation for high-precision digital communication. However, current signal solvers limit its application in integrated radar-communication systems. To address this, we propose a multi-parameter mapping model between Rydberg heterodyne communication
-
Femtosecond laser-plasmon interference lithography for self-organization of extremely regular nanogratings with tunable periodicity Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Ji Yan, Jiao Geng, Xiangwei Liu, Jukun Liu, Liping ShiAchieving laser-induced periodic surface structures with both excellent regularity and high tunability is a challenging task. In this study, we address this challenge by utilizing a hybrid film structure, comprising an amorphous silicon coating on a copper film, to create periodic structures through a photochemical reaction induced by laser-plasmon interference. Our experiments, corroborated by numerical
-
1.96 kV p-Cr2O3/ β -Ga2O3 heterojunction diodes with an ideality factor of 1.07 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Chunxu Su, Hong Zhou, Zheyuan Hu, Chenlu Wang, Yue Hao, Jincheng ZhangIn this Letter, we report on a p-Cr2O3/n-Ga2O3 vertical heterojunction diode (HJD) with a kilovolt-level breakdown voltage (BV). The chromium oxide (Cr2O3) film was deposited via magnetron sputtering, with a controlled thickness of approximately 20 nm and a hole concentration of 1 × 1016 cm−3. High-resolution transmission electron microscopy of the p-Cr2O3 film reveals a polycrystalline lattice structure
-
Growth of CdTe films on patterned graphene/Ge (100) by molecular beam epitaxy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Yanhui Zhang, Haitao Jiang, Zaihong Yang, Liuyan Fan, Ziteng Zhang, Can Zhou, Xiaohao Zhou, Pingping ChenGrowth on patterned graphene/Ge provides a route to improve the film quality of large mismatch heteroepitaxy and simultaneously facilitate the transfer of epitaxial films; however, the growth process and its associated technical challenges remain unclear. In this work, the molecular beam epitaxy (MBE) growth of CdTe films on micro-scale patterned strip-like graphene/Ge (100), containing selective area
-
RF-sputtered Al-doped ZnO-based transparent electrochemical capacitors developed as a structural energy storage to replace double-glazed window for a smart building Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Febin Paul, Vishnu Kalarikkal Narayanan, Sreenath S. Gopidas, Prasutha Rani Markapudi, Chan H. See, Gin Jose, Sankara Narayanan Potty, Libu ManjakkalStructural energy storage combines energy storage with structural strength, reducing weight, saving space, and improving efficiency. Among various types, transparent structural energy storage shows strong potential for seamless integration into windows, screens, surfaces, consumer electronics, and automotive applications. Developing new electrode designs with environmentally abundant materials is essential
-
An enhancement-mode C-H diamond FET with low work function gate material gadolinia Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Minghui Zhang, Fang Lin, Wei Wang, Mingchen Zhang, Qi Qi, Genqiang Chen, Feng Wen, Yanfeng Wang, Pengfei Zhang, Yuesong Liang, Shuwei Fan, Cui Yu, Tai Min, Hongxing WangEnhancement-mode hydrogen-terminated diamond (C-H diamond) field effect transistors (FETs) are strongly desirable for safety protection, energy saving, etc., and low work function gate material is an effective and convenient way to deplete the two-dimensional hole gas and realize the enhancement-mode. In this article, we demonstrate a C-H diamond FET with low work function gadolinia (Gd2O3) gate materials
-
Giant correlation, many body and exciton effects in Janus ferrovalley material H-FeClBr Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-04-02
Chaobo Luo, Zhihui Jiang, Wenchao Liu, Zongyu Huang, Wenjuan Liu, Xiang Qi, Jiayu Dai, Xiangyang PengThe family of transition metal dichlorides are recently found to be ferrovalley materials, exhibiting desirable spontaneous valley polarization that is a key to practical applications. In this work, Janus monolayer H-FeClBr is investigated as a case study by performing first-principles calculations. We focus on the giant correlation and many-body and exciton effects that will essentially modulate the
-
Charge localization in optoelectronic and photocatalytic applications: Computational perspective Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Francesco Ambrosio, Julia WiktorCharge localization is an important phenomenon that influences various material properties, including excited-state energetics, charge transport, catalytic activity, and recombination. As such, it has significant implications for optoelectronic and photocatalytic applications. In this Perspective, we begin by addressing the methodological challenges associated with modeling localized charges, highlighting
-
Coexistence of intrinsic magnetic topological state and spin-polarized nontrivial flatband in the honeycomb-kagome monolayers X2Rb3 (X=Cr, Mo, W) Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Jiashuo Liang, Hongshuang Liu, Bo Wang, Zeying Zhang, Liying WangMagnetic materials featuring topology and flatband in their electronic structure bridge the topological quantum physics and strongly correlated many-body physics, but materials that manifest this feature are rare. Here, we predict a class of ideal intrinsic magnetic topological insulators naturally featuring a nontrivial flatband in the two-dimensional (2D) honeycomb-kagome lattices X2Rb3 (X=Cr, Mo
-
Tunable layer-locked valley Hall effect in ferroelectric-magnetic-valley coupled breathing Kagome bilayer W3Br8 Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Yuxin Liu, Fanzheng Chen, Guichao Hu, Xiuwen Zhao, Xiaobo Yuan, Junfeng RenBased on an effective k·p model, we form breathing Kagome bilayers with two different interlayer antiferroelectric (AFE) couplings, i.e., tail to tail and head to head, to study their magnetic and valley properties. Spin–orbit coupling and magnetic exchange interaction induce valley-layer locking when the bilayer is ferromagnetic, however, spin-layer locking appears for the case of antiferromagnetic
-
Generation of high and bidirectional out-of-plane spin–orbit torque through vertical magnetization gradient Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Tianli Jin, Yuliang Zhu, Shaomin Li, Bo Zhang, Funan Tan, Gerard Joseph Lim, Jiangwei Cao, Kaiming Cai, Wen Siang LewHigh efficiency and out-of-plane spin–orbit torque (OOP-SOT) driven magnetization switching is essential for developing spin-based memory and logic devices. In this study, we report the generation of a large charge-to-spin conversion and bidirectional OOP-SOT by engineering a vertical magnetization gradient within a Co/Ho multilayer system. Exploiting the antiferromagnetic coupling between Co and Ho
-
π /2-periodic planar Hall effect in MnGe thin films Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Zhaohang Li, Fanbao Meng, Kesen Zhao, Xiangyu Hua, Zongyao Huang, Feixiong Quan, Hua Ge, Ziji Xiang, Tao Wu, Wenjie Meng, Yubin Hou, Qingyou Lu, Xianhui ChenThe planar Hall effect (PHE) offers notable advantages in spintronic applications, particularly because of its high signal-to-noise ratio and minimal thermal drift. In this study, we present a tunable PHE in MnGe (111)/Si (111) thin films. Typically, PHE demonstrates π-periodicity as the magnetic field rotates within the plane. Interestingly, we observed that in MnGe thin films, both π- and π/2-periodicities
-
Experiments on unidirectional excitation of designer flexural edge waves Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Kun Tang, Qinhao Lin, Yichao Xu, Da Gao, Yuqi Wang, Yibin LiWe demonstrate the unidirectional propagation of structure-induced edge waves in a thin plate. These waves, termed designer flexural edge waves (DFEWs), are observed along the free edge of a thin plate featuring periodically corrugated rectangular grooves. These DFEWs can be activated unidirectionally using either a pair of point sources exhibiting phase differences or a “chiral” source characterized
-
Charge redistribution to reduce contact resistivity in NiSi/Si system through interface modification: A first-principles study Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-31
Miaojia Yuan, Maokun Wu, Yichen Wen, Yilin Hu, Xuepei Wang, Boyao Cui, Jinhao Liu, Yishan Wu, Hong Dong, Feng Lu, Wei-Hua Wang, Pengpeng Ren, Sheng Ye, Hongliang Lu, Runsheng Wang, Zhigang JiThe metal–semiconductor contact resistivity has become a severe challenge for three-dimensional (3D) integration. In this work, starting from the physical origin, we propose that the charge redistribution is an effective strategy for decreasing Schottky barrier height (SBH), subsequently leading to a reduction in contact resistivity. Guided by this perspective, first-principles calculations are utilized
-
Synchrotron 3D-RSM reveals the microstructure of superconducting YBa2Cu3O7−x films grown on various substrates Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
Qingyu He, Erhao Peng, Jiquan Zhang, Fucong Chen, Zhongpei Feng, Jiangxiao Li, Xinyan Chen, Yajun Tao, Yueliang Gu, Yongqi Dong, Jie Yuan, Kui Jin, Chen Gao, Zhenlin LuoFurther unleashing the full potential of YBa2Cu3O7−x (YBCO), a premier high-temperature superconductor, for devices in advanced communication technologies hinges on the refinement of its fabrication process. In this work, a synchrotron three-dimension reciprocal space mapping (3D-RSM) technique, which offers a larger Q-space range and higher spatial resolution, was developed and used to analyze YBCO
-
Competing polar phases in 2D ferroelectric transition metal thio- and selenophosphates Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
Sabine Neumayer, Huimin Qiao, Nina BalkeThe aim of this Perspective is to provide an in-depth discussion of a certain class of 2D ferroelectrics that feature a van der Waals gap where more than one polar phase can exist energetically close to the ground state. Polar phases of interest can include different ferroelectric, antiferroelectric, and paraelectric phases, which can be transformed into each other through external stimuli, offering
-
Microdisk HgCdTe lasers operating at 22–25 μm under optical pumping Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-28
A. A. Razova, V. V. Rumyantsev, K. A. Mazhukina, V. V. Utochkin, M. A. Fadeev, A. A. Dubinov, V. Ya. Aleshkin, N. N. Mikhailov, S. A. Dvoretsky, D. V. Shengurov, N. S. Gusev, E. E. Morozova, V. I. Gavrilenko, S. V. MorozovLasing from HgCdTe microdisk cavities is demonstrated at wavelengths as long as 20–25 μm. The optical threshold and operation temperature are mainly limited by nonradiative Shockley–Read–Hall type recombination. The employed ion etching technology appears to introduce additional defects in the vicinity of the microdisks, degrading figures of merit as the height of the cavity increases. However, a watt-level
-
Negative differential resistance in a family of Fe3X4 (X = S, Se, Te) antiferromagnetic semiconducting nanowires Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Jinchao Kang, Qinxi Liu, Xue Jiang, Jijun ZhaoThe experimentally observed 2D magnets have unlocked the possibility of realizing a stable long-range order in the low-dimensional limit, which also gives a boost to the family of 1D magnets. Recently, a family of Fe-based nanowires has been observed in high-throughput transition metal chalcogenides synthesized by chemical vapor deposition [Zhou et al., Nat. Mater. 22, 450–458 (2023)]. In this work
-
Enhanced photoresponse and polarization-sensitive photodetector coupling InGaN/GaN MQW heterojunction with Ag nanoparticles Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Liang Chen, Tingjun Lin, Jixing Chai, Ququ Hao, Lei Lei, Jinrong Chen, Wenliang Wang, Guoqiang LiInGaN-based pin-type visible light photodetectors (PDs), exhibiting enormous advantages of fast photoresponse speed and low noise, have drawn tremendous interest in visible light communication (VLC) applications. However, the insufficient light absorption capacity and low photoelectric conversion efficiency of InGaN-based pin heterojunction hinder the realization of high-sensitivity PDs for achieving
-
Enhanced p-type GaN Ohmic contacts through strategic metal schemes and annealing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Donghan Kim, Soo-Young Moon, Sung-Bum Bae, Hyeon-Tak Kwak, Hongsik Park, Hyung-Seok LeeTo enhance the efficiency and performance of p-type GaN-based power devices (diode, MOSFET) and p-channel transistors (p-FET), forming an Ohmic contact with low specific contact resistance (ρc) at p-GaN can be an effective way. However, the specific contact resistance values of p-GaN remain limited to the range of mid-10−2Ω cm2 due to the low activation ratio of Mg dopants and high work function. Here
-
Multifunctional VO2 metasurface thermal emitter with switchable radiation bandwidth and direction Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Fuming Yang, Zhongzhu Liang, Xiaoyan Shi, Jinhuan Li, Zhe Wu, Siyu Guo, Xiangtao Chen, Wenwen Sun, Xintong Wei, Jihui Jiang, Junying LiuThe controllability of the spectral width and intensity of long-wave infrared (LWIR) emission is essential for various applications, including optical stealth, infrared radiation sources, and infrared lasers. Here, we proposed a multifunctional LWIR metasurface emitter with a switchable radiation state, which consists of germanium (Ge) rectangular pair resonators placed on a vanadium oxide (VO2) film
-
Enhanced rectification behavior and electrical properties of ZnO:Cu/ZnO heterojunctions via laser-induced doping and annealing treatments Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Yantong Liang, Jin-Cheng Zheng, Huan Xing, Ying Du, Tielong Deng, Huahan Zhan, Junyong Kang, Hui-Qiong WangCu-doped ZnO:Cu/ZnO heterojunctions were fabricated via a three-step laser-induced doping technique. This study systematically investigated the electrical properties, microstructure, elemental valence states, and energy-band alignment of these heterojunctions through multiple analytical techniques. Current–voltage measurements revealed an asymmetric, nonlinear behavior due to the depletion region at
-
Thermal evidences for multi-domain coexistence of freestanding VO2 crystalline microbeams with insulator–insulator transitions Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Sunyuan Zhang, Binhe Wu, Chunrui Wang, Jian Zhou, Hao Sun, Wenhan Cao, Huimei YuVanadium dioxide (VO2) exhibits multiple insulating states and complex transitions, both among these states and to a metallic rutile (R) phase. In this study, we investigate freestanding VO2 microbeams that undergo reversible transitions from an insulating triclinic (T) phase to an insulating monoclinic (M2) phase, followed by a transition to the R phase. The latent heat changes associated with these
-
Enhancing carrier dynamics via phase manipulation of dual-phase all-inorganic perovskites for high-performance photodetectors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Gaohui Ge, Kai Shen, Fan Cui, Jian Guo, Qiushi Wu, Hao Xu, Shu Min WangCesium lead bromide perovskites have demonstrated enormous potential in detecting applications, benefitting from their excellent optoelectronic properties and environmental stability. However, their intrinsic properties of photoluminescence intensity and carrier lifetime, key to photodetector performance, are still limited with conventional approaches (e.g., material purification and defect passivation)
-
First-principles and Monte Carlo simulations of high-entropy MXenes Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Noah Oyeniran, Oyshee Chowdhury, Chongze HuIn this work, we developed a computational framework that integrates first-principles density functional theory (DFT) calculations with Monte Carlo (MC) algorithm to search for the most stable configuration of high-entropy (HE) MXenes. This framework can predict the minimum energy configurations of HE MXenes with interlayer segregation. For instance, DFT/MC simulation indicates that (Ti0.5Cr0.5)4C3
-
Biomimetic spider web sensor designed with memristive oscillators for location-resolved disturbance detection Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Wenbo Sun, Yungang Li, Christy G. Jenson, S. M. Sadaf, Qiang Yu, Yiwen Zhang, Xinjun LiuThis article introduces a memristor-coupled oscillatory network utilizing niobium dioxide (NbO2) memristors and a biomimetic spider web structure. It focuses on the dynamic behaviors of single oscillators and small-scale networks within this unique system, particularly emphasizing voltage, current, and frequency characteristics. By strategically applying step voltage signals on a 1 + 3 node single-layer
-
Wide gap II-VI diodes with PbTe nano-inclusions for infrared detection and photovoltaics Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-27
Jakub Mateusz Gluch, Michal Szot, Sergij Chusnutdinow, Grzegorz KarczewskiWe report on the fabrication and characterization of p–n diodes made from wide bandgap II-VI semiconductors (p-ZnTe/n-CdTe) containing nano-inclusions of narrow bandgap material (PbTe). The diodes are fabricated by molecular beam epitaxy on semi-insulating GaAs (100) substrates. The PbTe nano-inclusions are formed either as a single layer of PbTe with a thickness of 350 nm or as multilayers built from
-
Strong coupling between cavity and flopping-mode qubit beyond direct gate connection in a Si/SiGe triple quantum dot Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Shun-Li Jiang, Tian-Yi Jiang, Tian-Yue Hao, Yong-Qiang Xu, Rui Wu, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping GuoCavity coupled flopping-mode spin qubit is considered as a promising scheme for enabling long-range qubit interactions in large-scale semiconductor quantum computation. In this work, we fabricate a linear Si/SiGe triple quantum dot (TQD) array coupled with a high-impedance TiN coplanar waveguide cavity via the gate of outer quantum dot. By utilizing two adjacent dots within the TQD, we sequentially
-
Enhanced Curie temperature in atomically thin perpendicular magnetic anisotropic oxide film through interfacial engineering Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Daolong Liu, Mingzhu Xue, Caihong Jia, Weifeng Zhang, Yongli Yu, Rui Wu, Xucai Kan, Jinbo Yang, Mingliang Tian, Shouguo Wang, Xuegang ChenThe inverse spinel oxide NiCo2O4, known for its high Curie temperature, low resistivity, and perpendicular magnetic anisotropy, is a promising candidate for the development of next-generation spintronic devices. However, reducing the thickness of the NiCo2O4 film to a few atomic layers degrades its room temperature magnetic and electrical properties, limiting its practical application. In this study
-
Ultra-long-range Bessel beams via leaky waves with mitigated open stopband Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
E. Negri, F. Giusti, W. Fuscaldo, P. Burghignoli, E. Martini, A. GalliOpen stopband (OSB) mitigation techniques are commonly used to improve the far-field radiating properties of leaky-wave antennas based on periodic structures. Recently, leaky waves have been proposed to focus energy in the near field through Bessel beams. However, the focusing character of Bessel beams is notably limited to a maximum distance known as the nondiffractive range. In this work, an OSB
-
Single-shot Fourier ptychography using polarization-encoded illumination Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Hansol Yoon, Hyesuk Chae, Kyung Chul Lee, Kyungwon Lee, Seung Ah LeeFourier ptychography (FP) is widely adopted for label-free, high-resolution quantitative phase imaging (QPI) of biological samples. However, its imaging speed is limited by the need for multiple acquisitions. In this work, we propose a single-shot FP technique that uses linear polarizers to encode multiple illumination wavevectors and a polarization camera to capture multiple sets of information simultaneously
-
Decoding the effect of defect and domain on piezoelectric properties of K0.5Na0.5NbO3-based single crystals Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-26
Chenggong Xiang, Zhiyong Liu, Pu Mao, Kun Guo, Bing Xie, Zhiguo Wang, Longlong ShuThe ultra-high piezoelectric activity of K0.5Na0.5NbO3 (KNN)-based single crystals with excellent electromechanical coupling characteristics has attracted great interest. However, the growth of KNN-based single crystals is restricted by their high melting point and harsh equipment conditions. In this work, a large-sized single crystal of (K0.5Na0.5)0.994Bi0.006Nb0.998Cu0.004O3 (KNNBC) was grown using
-
Morphological and strain engineering of SiGe cladded channels for stacked nanowire transistors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Yanpeng Song, Guangxing Wan, Xiaomeng Liu, Junjie Li, Hailing Wang, Xinhe Wang, Kuanrong Hao, Z. Bai, Xiangsheng Wang, Zhenzhen Kong, Junfeng Li, Jun Luo, Yongkui Zhang, Huilong Zhu, Chao Zhao, Guilei WangThis paper presents a comprehensive study of silicon germanium (SiGe) cladded channels for stacked nanowires (NWs), focusing on morphological control and strain engineering to enhance device performance. High-resolution transmission electron microscopy (TEM) was used to characterize the Si NWs and SiGe cladding morphology. The results demonstrate that the morphology of SiGe cladding can be controlled
-
Black phosphorene-enhanced Raman spectroscopy for sensitive detection of DNA nucleotides Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Ferdinand Nouaye, Mohammed Amlieh, Soukayna Boulaassafre, Younes Akabli, Sidi Abdelmajid Ait Abdelkader, Afaf Yaden, Vivek Chaudhary, Reda Ben Mrid, Rachid El Fatimy, Abdelouahad El FatimyIn this study, we propose black phosphorene (BP) for surface-enhanced Raman spectroscopy of DNA nucleotides. BP-enhanced Raman spectroscopy provides superior enhancement compared to other 2D materials, such as graphene and molybdenum disulfide, for biomolecular detection. We show that BP significantly amplifies the Raman signals of DNA nucleotides, enabling more sensitive and accurate detection of
-
Two-terminal photovoltaic neuromorphic device with temporal dynamics for reservoir computing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Hong Fang, Jie Wang, Shuanger Ma, Le Zhao, Zhiping Liu, Fang Nie, Weiming Lü, Limei ZhengPhotovoltaic (PV) neuromorphic devices with photocurrents under illumination as readouts have gained increasing attention due to their ultralow latency and excellent energy efficiency during reading process. However, they face significant challenges in processing temporal data because of the lack of inherent temporal dynamics, limiting their application in reservoir computing (RC) systems. Here, we
-
Uncovering the modest hole mobility for the intrinsic single crystal CsPbBr3 by variable-temperature time of flight measurement Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-03-25
Hao Yan, Gang Cao, Junqiang Wang, Chengqian Zhong, Shaohan Wang, Juan Qin, Fangxiong Tang, Minghao Cui, Yike Luo, Wenzhen Wang, Yan Zhu, Junfeng Chen, Run Xu, Linjun WangCsPbBr3 single crystal is a promising candidate for room temperature radiation detector. However, the experimental mobilities reported exhibit considerable discrepancy, ranging widely from 10 to 4500 cm2/(V · s) at room temperature. Here, vertical Bridgman grown CsPbBr3 single crystal has been used to measure the mobility accurately using pulse-biased time-of-flight method. The hole mobility for CsPbBr3