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Self-supported flexible organic electrochemical synaptic transistors on self-healing composite electrolyte membranes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Haoran Yu, Yunchao Xu, Zhonghui Deng, Chenxing Jin, Wanrong Liu, Xiaofang Shi, Jianzhou Liu, Jia Sun, Junliang Yang
A variety of organic electrochemical transistors have been recently developed; however, their self-healing performance has been largely ignored. In this study, we propose the use of a lithium-ion composite electrolyte membrane as a dielectric layer and the use of poly(3-hexylthiophene) (P3HT) as a channel layer to fabricate flexible self-supporting organic synaptic transistors. A variety of synaptic
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NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Kingsley Egbo, Emily M. Garrity, William A. Callahan, Chris Chae, Cheng-Wei Lee, Brooks Tellekamp, Jinwoo Hwang, Vladan Stevanovic, Andriy Zakutayev
NiO/Ga2O3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga2O3 heterojunction diodes and formation of NiGa2O4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an
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Tuning grain boundary cation segregation with oxygen deficiency and atomic structure in a perovskite compositionally complex oxide thin film Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Huiming Guo, Hasti Vahidi, Hyojoo Kang, Soham Shah, Mingjie Xu, Toshihiro Aoki, Timothy J. Rupert, Jian Luo, Kandis Leslie Gilliard-AbdulAziz, William J. Bowman
Compositionally complex oxides (CCOs) are an emerging class of materials encompassing high entropy and entropy stabilized oxides. These promising advanced materials leverage tunable chemical bond structure, lattice distortion, and chemical disorder for unprecedented properties. Grain boundary (GB) and point defect segregation to GBs are relatively understudied in CCOs even though they can govern macroscopic
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Enhancing flexibility in BaTiO3:Sm3+ freestanding nanofiber membranes through Poisson's ratio design Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Yang Li, Yongcheng Zhang, Dehua Wang, Limei Hou, Shanmei Du, Yang Deng, Yanfeng Du, Yingfei Xin, Chongyang Fu, Mingliang Jin, Yan Gu, Xiaoxiong Wang
In recent years, flexible functional materials have attracted increasing interest, but there is a lack of designing mechanisms of flexibility design with superstructures. In traditional engineering mechanics, the maximum bending strain (MBS) was considered universal for describing the bendable properties of a given material, leading to the universal designing method of lowering the dimension such as
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Direct observation of radio-frequency negative differential resistance in GaN-based single drift region IMPATT diodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Zhongtao Zhu, Lina Cao, Adam Jönsson, Pengcheng Xu, Jinqiao Xie, Patrick Fay
We report the direct observation of radio-frequency negative differential resistance, via on-wafer S-parameter measurements, in GaN-based impact ionization avalanche transit time (IMPATT) diodes. Clear signatures of reflection gain are observed from 18.7 to 30.6 GHz. These observations have been made possible by suppressing the reverse leakage current (and thereby parasitic shunt conductance) by optimization
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Abnormal temperature-dependent transient electroluminescence spikes induced by the leakage of hole carriers in organic light-emitting diodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Jing Chen, Jun Yang, Keyi Zhang, Yinqiong Zhou, Song Yang, Hong Lu, Zuo Li, Yingfei Yi, Lihong Chen, Sijie Zhang, Xiaoli Chen, Zuhong Xiong
The amplitude of the emission spike at the transient electroluminescence (TEL) falling edge is an important benchmark for evaluating the quantities of trapped charges existed in organic light-emitting diodes and often shows a normal temperature dependence which increases with the decreasing temperature. Surprisingly, an unreported abnormal temperature-dependent TEL spike was observed in this work.
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Direct simultaneous measurement of electrocaloric effect and hysteresis loss heating in ferroelectrics Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 J. Fischer, D. Hägele, J. Rudolph
Electrocaloric effect and loss-induced self-heating are simultaneously investigated in single-crystalline relaxor 0.9Pb(Mg1/3Nb2/3)O3-0.1PbTiO3 by a direct, high-resolution method. Transients of the total temperature change for few-cycle electric field pulses allow to distinguish and individually determine the contributions from electrocaloric effect and self-heating with millikelvin temperature and
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Lattice engineering of high-entropy olivine-type lithium metal phosphate as high-voltage cathodes Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Juntian Fan, Tao Wang, Yating Yuan, Albina Borisevich, Chi-Linh Do-Thanh, Zhenzhen Yang, Sheng Dai
Engineering of high-entropy cathode materials for lithium-ion batteries has been actively pursued owing to the outstanding conductivity of high-entropy materials benefited from the maximum entropy and unique antisite disordering structure. Olivine lithium metal phosphates such as LiMnPO4 and LiNiPO4 feature high working voltages but low capacities due to their insulation nature. In this work, the synthesis
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Tuning magnetization compensation temperature of Gd3Fe5O12 epitaxially grown on Gd3Sc2Ga3O12 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Pengju Wang, Jintao Ke, G. S. Li, L. Z. Bi, Chaoqun Hu, Zhaozhao Zhu, Junhang Liu, Ying Zhang, J. W. Cai
The compensated ferrimagnetic insulator Gd3Fe5O12 (GdIG) with a magnetization compensation point (TM ∼ 286 K) near room temperature has recently gained significant attention because of its long spin transmission length and absence of Ohmic loss. However, previously reported GdIG films with perpendicular magnetic anisotropy have a TM far below room temperature, which is unfavorable for practical applications
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Antiferromagnetic droplet soliton driven by spin current Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Roman V. Ovcharov, Mohammad Hamdi, Boris A. Ivanov, Johan Åkerman, Roman S. Khymyn
We demonstrate that a spin current flowing through a nanocontact into a uniaxial antiferromagnet with first- and second-order anisotropy can excite a self-localized dynamic magnetic soliton, known as a spin-wave droplet in ferromagnets. The droplet nucleates at a certain threshold current with the frequency of the Néel vector precession laying below the antiferromagnetic resonance. The frequency exhibits
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Direct recording and reading of mechanical force by afterglow evaluation of multi-piezo mechanoluminescent material Li0.12Na0.88NbO3 on well-designed morphotropic phase boundary Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Tomoki Uchiyama, Taisei Atsumi, Koki Otonari, Yuki Fujio, Xu-Guang Zheng, Chao-Nan Xu
Mechanoluminescence (ML) refers to the photon emission from materials subjected to mechanical stimuli. A general concept concerning ML materials is that they cannot directly record a stress history (mechanical record; MR). Here, we report an approach that retrieves a quantitative recording of stress history through the afterglow characteristics analysis of a specific multi-piezo ML material Li0.12Na0
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Phenomenological analysis of positive and negative electrocaloric effects in Rochelle salt Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Junjie Li, Chengdong Tao, Zhe Xiong, Yuxuan Hou, Xing Zhang, Wenjuan Wu, Lezhong Li, Yang Bai
Ferroelectrics exhibiting both positive and negative electrocaloric effects stand out as promising materials for achieving high-efficiency solid-state refrigeration. The phase transition is acknowledged as a crucial factor in designing such materials. This study investigates the electrocaloric behavior and its correlation with phase transitions in Rochelle salt single crystal using Landau thermodynamic
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Dynamic strain coupling driven by structural phase transition in mixed-dimensional 2H-MoS2/VO2 van der Waals heterointerfaces Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Wanyu Li, Lanping He, Yang Jiang, Yijun Yao, Meixia Chen, Weifeng Ge, Zhifeng Zhu, Sheng Cheng, Cheng Tan, Yuanjun Yang, Lan Wang
Mixed-dimensional van der Waals (vdW) heterostructures, integrated two-dimensional (2D) atomic crystals with three-dimensional (3D) functional materials, offer a powerful means to manipulating physical properties and generating unprecedented functionalities. Understanding interfacial couplings at those hetero (homo)-interfaces is indispensable for exploring new optical and electronic devices. Herein
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Weak ferromagnetism and magnetoelectric coupling in van der Waals antiferromagnet MnPSe3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 J. H. Zhang, L. Lin, S. H. Zheng, P. Z. Chen, L. Huang, G. Z. Zhou, W. J. Zhai, F. Yu, B. Yu, X. M. Cui, M. F. Liu, Y. S. Tang, Z. B. Yan, J.-M. Liu
With the discovery of two-dimensional (2D) ferroelectricity and ferromagnetism in van der Waals (vdW) materials, there has been significant interest in 2D multiferroics. Herein, we report the occurrence of weak ferromagnetism and magnetoelectricity in vdW antiferromagnet MnPSe3 single crystals. Our results demonstrate that MnPSe3 undergoes an antiferromagnetic transition at the Néel temperature TN
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Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Mingtao Nong, Che-Hao Liao, Xiao Tang, Haicheng Cao, Tingang Liu, Patsy A. Miranda Cortez, Dhanu Chettri, Glen Isaac Maciel García, Xiaohang Li
This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free AlN epilayer with a thickness of 500 nm was acquired. The x-ray diffraction rocking curves of AlN (002) and (102) exhibited full width at half maximum values of 0.22° and 0.36°, respectively
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Enhanced vertical piezoelectricity in nano-switch diamane structures by super-dipole-moment effect Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Xiao Shang, He-Na Zhang, Si-Tong Liu, Dai-Song Tang, Qi-Wen He, Jun-Hui Wang, Dan-Yang Zhu, Fu-Chun Liu, Xiao-Chun Wang
The lack of the vertical piezoelectricity and the corresponding internal physical mechanism of diamanes limit their applications in the piezoelectric field. The vertical piezoelectricity of the diamane doped with Si/Ge atoms is studied systematically by the first principles calculation. These monolayer diamanes can be regarded as the vertical piezoelectric nano-switches with a moderate barrier. Based
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Engineering the topological states of Weyl ferromagnetic CoxMnGay films grown by molecular beam epitaxy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Lizhu Ren, Tieyang Zhao, Jingsheng Chen, Kie Leong Teo
Due to its nontrivial topological state, a magnetic Weyl semimetal often exhibits exotic transport properties that are important for both fundamental physics and potential spintronics applications. In this Letter, we investigate the composition dependences of the structural order, magnetism, and transport properties for the epitaxial Heusler alloy CoxMnGay (CMG) topological Weyl semimetal films grown
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Enhancing carrier collection in CsPbBr3 solar cells through crystal orientation and defect passivation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Haotian Dong, Zijian Wang, Qiang Zhang, Zhen Zhang, Zhi Zhu, Xiaopeng Han, Jun Gu, Xiaoyong Wang, Jie Yang, Tao Yu, Chunxiong Bao, Zhigang Zou
All-inorganic carbon-based CsPbBr3 perovskite solar cells (PSCs) have gained growing interest for their remarkable stability. However, compared to their organic–inorganic hybrid counterparts, there is still substantial room for improving their performance primarily due to the inferior photogenerated carrier collection efficiency. Here, we employ area-dependent transient photocurrent to assess the carrier
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Strain-tunable ferromagnetism in 2D non-van-der-Waals CuCr2X4 (X = S, Se) Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Shasha Li, Xiangyan Bo, Lei Fu, Chang Liu, Feng Li, Yong Pu
The magnetic property of non-van-der-Waals CuCr2X4(X = S, Se) monolayer and its strain dependence are investigated systematically from first principles. The CuCr2X4 monolayers are intrinsic ferromagnetic (FM) metals, and the magnetism is mainly contributed by Cr atoms. Considerable magnetic anisotropy energy of 1.28 meV per Cr is found in CuCr2Se4 monolayer, which is one order of magnitude higher than
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Topological and chiral superconductor nanoarchitectures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-25 Rosa Córdoba, Vladimir M. Fomin
3D nano-superconductors, with non-trivial geometry-driven topological phenomena, stand as promising systems for the future evolution of efficient and multifunctional technologies. However, the substantial challenges inherent in the experimental work, particularly regarding the fabrication and characterization of 3D nanoscale geometries and unconventional topologies of superconducting states, have confined
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Enhancing gas film stability by alternating superhydrophobic and hydrophobic surfaces for stable drag reduction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Xiao Yao, Yi Yang, Guoqiang Li, Yuegan Song, Yuan Wang, Sensen Xuan, Huan Yin, Qinrui Zou, Hesong Ren, Xiaoxin Li, Xiaohong Li
Superhydrophobic surfaces can significantly reduce the resistance of underwater vehicles, but as the speed increases, the gas film is prone to be destroyed, leading to a decrease in the drag reduction effect or even an increase in the drag. Therefore, enhancing the stability of the gas film is crucial for maintaining the drag reduction effect. Inspired by the honeycomb array pit structures, the high
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Dual-comb interchanging absolute distance measurement with non-ambiguity range extension Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Xiaodong Shao, Hainian Han, Yu Yan, Junyi Ma, Chengzhi Li, Zhiyi Wei
We demonstrate a rapid and high-precision dual-comb ranging method with a significantly extended non-ambiguity range (NAR). By reasonably setting the polarization combining and splitting of two optical combs, we can obtain two sets of interferograms of signal comb and local oscillator comb interchanging simultaneously. This method allows us to extend the NAR to tens to hundreds of kilometers without
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Low turn-on voltage and 2.3 kV β -Ga2O3 heterojunction barrier Schottky diodes with Mo anode Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Chunxu Su, Hong Zhou, Kun Zhang, Chenlu Wang, Sihan Sun, Hehe Gong, Jiandong Ye, Zhihong Liu, Kui Dang, Zheyuan Hu, Xiaodong Zhang, Jie Wei, Xiaorong Luo, Jincheng Zhang, Rong Zhang, Yue Hao
In this work, we propose combining a low work function anode metal and junction barrier Schottky structure to simultaneously achieve low turn-on voltage (Von) and high breakdown voltage (BV), which alleviates the dilemma that high BV requires high Schottky barrier height (SBH) and high Von. Molybdenum (Mo) is used to serve as the anode metal to reduce the SBH and facilitate fast turn-on to achieve
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Tolerance and breakdown of topological protection in a disordered waveguide Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Kiyanoush Goudarzi, Moonjoo Lee
We consider a disordered waveguide consisting of trivial dielectric and non-trivial magnetically anisotropic material. A topologically protected edge mode appears owing to the broken time-reversal symmetry of the non-trivial lattice. While the edge mode maintains under other position and radius disorders, the protection is immediately broken by applying a radius disorder to the non-trivial lattice
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Source–drain contact impacts on electrical performances and low frequency noise of InZnO thin-film transistors down to 7 K Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Yayi Chen, Xingji Liu, Yuan Liu, Rongsheng Chen, Jianfeng Zhang, Mingchao Wu, Hoi-Sing Kwok, Wei Zhong
Source–drain contacts seriously affect low frequency noise (LFN) in amorphous IZO (a-IZO) thin-film transistors with bilayer ITO/Mo electrodes at cryogenic temperatures. In the range of 7–300 K, electrical and LFN performances of devices are measured, and the temperature dependence of channel resistances (Rch) and contact resistances (Rsd) is also analyzed. The carrier transport transition both occurs
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Dynamic tuning of moiré superlattice morphology by out-of-plane deformation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Guangfei Zhu, Rumeng Liu, Chun Tang, Lifeng Wang
The moiré superlattice structure has become a subject of intense interest due to its unique and intriguing properties. Key to the success of its applications is the precise manipulation of morphologies that determines the ultimate functionalities. To achieve such a goal is, however, very challenging. In this work, we present an approach for tuning moiré superlattices of suspended van der Waals structures
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Realization of high cryogenic thermoelectric performance for MgAgSb base alloy by regulation heat-treatment process Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Fanghong Qiu, Jun-Liang Chen, Yuntiao Liao, Zhongwei Zhang, Jisheng Liang, Lei Miao, Qi Zhou, Ying Peng, Chengyan Liu, Jie Gao
MgAgSb alloy has attracted wide attention due to its inherent low thermal conductivity, excellent thermoelectric (TE) properties, and environmental friendliness. Although the TE performance has been deeply investigated for the temperature range over 300–700 K, while cryogenic range has seldom report. In this study, a systematic investigation on cryogenic TE performance of α-MgAgSb has been performed
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High energy storage density in AgNbO3-based lead-free antiferroelectrics using A/B-site co-doping strategy Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 N. Zhang, J. R. Jiang, J. X. Zhang, J. Y. Wang, P. P. Jia, M. M. Zhu, Y. Y. Guo, S. Zhou, G. L. Song
Lead-free antiferroelectric AgNbO3 ceramics have garnered extensive attention due to their rapid charge/discharge capabilities and environmentally friendly nature, holding immense potential for energy storage applications. However, the practical utilization of AgNbO3 has been hindered by its low energy storage density. This study employed an A/B-site co-doping strategy, which yielded positive effects
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Phonon transport simulation with an extended VOF scheme for nano-structured thin film Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Yoshiya Takahara, Mitsuhiro Matsumoto, Misaki Hanaoka, Manabu Iwakawa
Control of phonon transport in solid devices is important for thermoelectric energy conversion and phononic crystal technology, and much attention has been paid to sub-micrometer or nanometer scale structures for that purpose. In order to investigate how various nano-structures affect the phonon transport, we have developed a numerical simulation code based on the Boltzmann transport equation of phonon
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Upscaling laboratory organic electronic sensor devices to roll-to-roll printing: The effect of printable electrodes on device operation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Daniel C. Elkington, Nathan A. Cooling, Swee-Lu Lim, Nguyen T. Trinh, Alaa Al-Ahmad, Tim Lewis, Kristofer L. Thompson, Riku Chowdhury, Warwick Belcher, Paul C. Dastoor
The prospect of large-scale production of low-cost electronic devices is a driving factor behind the recent interest in printed organic electronics. However, the upscaling of laboratory organic electronic devices is extremely challenging since it requires the adaptation of materials and fabrication processes optimized for the small scale to industrial manufacturing techniques, such as roll-to-roll
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True exponentially enhanced sensing in the non-Hermitian topological phase Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Rui Zhang, Tian Chen
Non-Hermitian systems have been employed to construct a high-sensitivity sensor. To evaluate the performance of the sensors, the quantum Fisher information per photon, or equivalently signal-to-noise ratio per photon, is provided as a “true” sensing criterion, which avoids the trivial contribution from the photon numbers. The specific properties of non-Hermitian systems, e.g., exceptional points and
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Primary dendrite growth within binary Fe71Ge29 eutectic alloy under duplex levitation states Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 N. S. Hou, D. L. Geng, Y. J. Jin, P. X. Yan, B. Wei
The primary β-Fe3Ge2 dendrite growth kinetics within liquid Fe71Ge29 eutectic alloy was studied by both acoustic levitation and electrostatic levitation techniques, with maximum experimental undercoolings of 130 and 143 K, respectively. At small undercoolings, (α1 + β-Fe3Ge2) eutectic growth proceeded and then transformed to lamellar (ε-Fe3Ge + β-Fe3Ge2) microstructure by peritectoid reaction. Once
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A synaptic transistor based on van der Waals heterojunction HfS2/HfOx/SnS2 with optical modulation properties Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Peijing Fang, Wenxin He, Yu Lin, Wenxing Lv, Zhipeng Yu, Like Zhang, Zishuo Han, Rongbin Zhan, Zhongming Zeng
Neuromorphic devices, which break the traditional von Neumann architecture, have attracted much attention for their ability to mimic the perception, learning, and memory functions of the human brain. Two-dimensional (2D) materials are excellent candidates for building neuromorphic devices due to their atomic-level thickness and excellent optoelectronic properties. In this work, we designed a nonvolatile
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Physics-based 3D simulation of single event transient current in GaN high-electron-mobility transistor and super-heterojunction field-effect transistor Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-24 Jianan Song, Anusmita Chakravorty, Miaomiao Jin, Rongming Chu
Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved
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Investigation of carrier transport and recombination at type-II band aligned p-NiO/AlGaN interface in p-NiO gate AlGaN/GaN HEMTs under forward bias Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yanghu Peng, Hui Guo, Ruiling Gong, Huaize Liu, Pengfei Shao, Na Sun, Fangfang Ren, Jiandong Ye, Youdou Zheng, Hai Lu, Rong Zhang, Dunjun Chen
In this work, fine carrier transport and recombination processes in p-NiO gate AlGaN/GaN high electron mobility transistors were investigated by analyzing their electroluminescence under forward gate bias, with photoluminescence spectrum as a reference. Red luminescence with a peak of 1.9 eV was captured when the gate bias voltage exceeded 4 V, which was verified to originate from the tunneling enhanced
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Optimizing Al content to eliminate the brittle phase in lightweight TiZrNbTa0.1Alx refractory high-entropy alloys Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Chen-Hao Xu, Hong Yu, Xuan Xiao, Jia-Wei Zhang, Wei-Bing Liao
Body-centered cubic (BCC) lightweight refractory high-entropy alloys (LWRHEAs) with Al contents have attracted much attention due to their low density and excellent mechanical properties. However, these typical lightweight alloys often suffer from poor room temperature plasticity. In this study, we prepared TiZrNbTa0.1Alx LWRHEAs by using a high-vacuum arc-melting technique and investigated the influence
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Fast relaxation of interlayer excitons from the free to self-trapped states in lead halide perovskite van der Waals heterostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jia-Pei Deng, Xin-Jun Ma, Shao-Juan Li, Zhi-Qing Li, Zi-Wu Wang
We study the thermal relaxation of interlayer excitons from the free to momentary self-trapped states in lead halide perovskite van der Waals heterostructures based on the well-known Huang-Rhys model. We find that these relaxation processes (self-trapped processes) are very fast ranging from nanoseconds to picoseconds. Moreover, the self-trapped time displays different variational trends by regulating
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Nanoscale single-electron box with a floating lead for quantum sensing: Modeling and device characterization Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 N. Petropoulos, X. Wu, A. Sokolov, P. Giounanlis, I. Bashir, A. K. Mitchell, M. Asker, D. Leipold, R. B. Staszewski, E. Blokhina
We present an in-depth analysis of a single-electron box (SEB) biased through a floating node technique that is common in charge-coupled devices. The device is analyzed and characterized in the context of single-electron charge sensing techniques for integrated silicon quantum dots (QD). The unique aspect of our SEB design is the incorporation of a metallic floating node, strategically employed for
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Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jia Xu, Yu Zhang, Ying Ding, Yuhua Gong, Jianxi Yao
In this study, all-inorganic two-dimensional (2D) perovskite Cs2Pb(SCN)2Br2 was employed in a thin-film vertical structure prototype memristor. The device consisted of a Cs2Pb(SCN)2Br2 film prepared through solution approach, sandwiched between an Ag electrode and a TiO2/FTO substrate bottom electrode. Two types of resistive switching (RS) behaviors were observed within a single device at different
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Kerr-lens mode-locking of an Yb:SALLO laser generating 25 fs pulses at 1090 nm Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Zhang-Lang Lin, Huang-Jun Zeng, Zhongben Pan, Pavel Loiko, Valentin Petrov, Xavier Mateos, Ge Zhang, Weidong Chen
We report on the generation of sub-30 fs pulses from a Kerr-lens mode-locked ytterbium solid-state laser based on a disordered Yb:SrLaAlO4 (Yb:SALLO) crystal as a gain medium. The Yb:SALLO laser, pumped by a spatially single-mode Yb-fiber laser at 979 nm, produces soliton pulses as short as 25 fs at 1090 nm, with an average output power of 149 mW at a pulse repetition rate of ∼80.7 MHz. The power scaling
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Violation of the Cauchy–Born rule in multi-principal element alloys Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Swarnava Ghosh
Multi-principal element alloys are a novel class of materials that are formed by combining multiple elements in high concentrations and show exceptional properties compared to conventional alloys. These alloys have high configurational entropy due to inherent atomic disorder. The Cauchy–Born rule is a popular homogenization method for linking atomistic to continuum length scales. In this Letter, we
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Femtosecond laser structured black superhydrophobic cork for efficient solar-driven cleanup of crude oil Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yuchun He, Kai Yin, Lingxiao Wang, Tingni Wu, Yu Chen, Christopher J. Arnusch
Marine oil spills have become a major global environmental challenge, yet there remains a lack of effective and environmentally friendly strategies for the remediation of water contaminated with high-viscosity oil. In this study, we introduce a superhydrophobic oleophilic material with photothermal properties for efficient absorption of viscous oil. Femtosecond laser treatment methodology is applied
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Continuous-variable quantum key distribution over 28.6 km fiber with an integrated silicon photonic receiver chip Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Yiming Bian, Yan Pan, Xuesong Xu, Liang Zhao, Yang Li, Wei Huang, Lei Zhang, Song Yu, Yichen Zhang, Bingjie Xu
Quantum key distribution, which ensures information-theoretically secret key generation, is currently advancing through photonic integration to achieve high performance, cost reduction, and compact size, thereby facilitating the large-scale deployment. Continuous-variable quantum key distribution is an attractive approach for photonic integrations due to its compatibility with off-the-shelf optical
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Asymmetric thermal optofluidics based on plasmonic multilayered nanostructures Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Zhimin Jing, Cuiping Ma, Peihang Li, Peng Yu, Arup Neogi, Zhiming Wang
Manipulating thermo-convective fluid flow induced by plasmonic nanostructures under light illumination has garnered significant attention in various fields, such as biomedical sensing, particle trapping, and drug delivery. However, achieving symmetric optical manipulation of fluid flow encounters challenges in certain applications due to the inherent temporal and spatial symmetry in the energy transfer
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Excitation and dynamics of spin solitons in chiral magnetization configuration Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Abir Shadman, Jian-Gang (Jimmy) Zhu
This research paper presents systematic micromagnetic modeling of dynamic spin solitons carried by perpendicular magnetization component on a topologically preserved chiral sequence of uniform 360° in-plane domain walls with fixed boundaries in a strip. The long, narrow strip of a soft, magnetic thin film has a repeated in-plane magnetization pattern such that the local magnetization will rotate uniformly
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High-entropy layer assisting quasi-zero-strain cathodes for P2-Na2/3Ni1/3Mn2/3O2 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Shuwei Sun, Ying Bai
Layered transition metal oxides have attracted much attention for high-energy density sodium ion batteries. However, most P2-type layered oxides undergo a large volume change when they are charged at a deep desodiated state, accompanied by inevitable anisotropic stress, leading to poor structural stability and terrible ion transfer. In this work, a high entropy (HE) material with a robust structure
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Anomalous thermal transport and high thermoelectric performance of Cu-based vanadate CuVO3 Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Xin Jin, Qiling Ou, Haoran Wei, Xianyong Ding, Fangyang Zhan, Rui Wang, Xiaolong Yang, Xuewei Lv, Peng Yu
Thermoelectric (TE) conversion technology, capable of transforming heat into electricity, is critical for sustainable energy solutions. Many promising TE materials contain rare or toxic elements, so the development of cost-effective and eco-friendly high-performance TE materials is highly urgent. Herein, we explore the thermal transport and TE properties of transition metal vanadate CuVO3 by using
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Dual-polarization small-angle strong nonreciprocal thermal radiator with Weyl semimetal Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-23 Jimin Fang, Jiaqi Zou, Tingyu Liu, Manzhuo Wang, Xiaoqiang Sun, Yuanda Wu, Daming Zhang
The development of dual-polarization irreversible radiators that can operate without external magnetic field is an arduous task. To avoid the need of strong magnetic field, a dual-polarization nonreciprocal thermal radiator with the introduction of Weyl semimetal is demonstrated. It consists of cross-shaped silicon nanopores, Weyl semimetal, and Ag reflective layer. The simulation results show that
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Electron mobility of SnO2 from first principles Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Amanda Wang, Kyle Bushick, Nick Pant, Woncheol Lee, Xiao Zhang, Joshua Leveillee, Feliciano Giustino, Samuel Poncé, Emmanouil Kioupakis
The transparent conducting oxide SnO2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO2 from first principles to examine the temperature
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Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Qingyun Xie, John Niroula, Nitul S. Rajput, Mengyang Yuan, Shisong Luo, Kai Fu, Mohamed Fadil Isamotu, Rafid Hassan Palash, Bejoy Sikder, Savannah R. Eisner, Harshad Surdi, Aidan J. Belanger, Patrick K. Darmawi-Iskandar, Zlatan Aksamija, Robert J. Nemanich, Stephen M. Goodnick, Debbie G. Senesky, Gary W. Hunter, Nadim Chowdhury, Yuji Zhao, Tomás Palacios
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms
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Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xiaohu Wang, Xuefeng Zheng, Danmei Lin, Hao Zhang, Yanrong Cao, Ling Lv, Yingzhe Wang, Peipei Hu, Jie Liu, Xiaohua Ma, Yue Hao
In this work, the single-event burnout (SEB) mechanism of p-GaN gate AlGaN/GaN HEMTs has been studied systematically. The irradiation experiment was carried out based on Ta ions with high linear energy transfer of 75.4 MeV/(mg/cm2), a standard criterion for commercial space applications. It is clearly observed that both the drain current and gate current increase during the irradiation. With the increasing
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Photoinduced shortening of metallic bond in 1T′-ReS2 revealed by femtosecond electron diffraction Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Jingjun Li, Luye Yue, Zijing Chen, Dao Xiang, Jianming Cao
Rhenium disulfide with a distorted crystal structure has recently attracted tremendous attention for its excitonic and highly anisotropic properties. While ultrafast spectroscopies have extensively probed the carrier response to photoexcitation, the associated lattice response has remained elusive. In this study, we utilize MeV femtosecond electron diffraction to unravel the intricate dynamics of lattice
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Fluorite-structured high-entropy oxide sputtered thin films from bixbyite target Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 George N. Kotsonis, Saeed S. I. Almishal, Leixin Miao, Mary Kathleen Caucci, Gerald R. Bejger, Sai Venkata Gayathri Ayyagari, Tyler W. Valentine, Billy E. Yang, Susan B. Sinnott, Christina M. Rost, Nasim Alem, Jon-Paul Maria
The prototype high-entropy oxide (HEO) Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ represents a particularly complex class of HEOs with significant anion sublattice entropy. The system takes either a fluorite or bixbyite-type crystal structure, depending on synthesis kinetics and thermal history. Here, we synthesize bulk ceramics and epitaxial thin films of Y0.2La0.2Ce0.2Pr0.2Sm0.2O2−δ and use diffraction to explore
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Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Tanay Tak, Alejandro Quevedo, Feng Wu, Srinivas Gandrothula, Jacob J. Ewing, Stephen Gee, Shuji Nakamura, Steven P. DenBaars, James S. Speck
The large polarization barriers between the quantum wells and quantum barriers in long-wavelength GaN-based light-emitting diodes (LEDs) inhibit their performance by requiring excess driving voltages to reach standard operating current densities. Lateral injection of carriers directly into quantum wells is required to circumvent this issue. V-defects are naturally occurring inverted hexagonal defects
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Propagon boundary scattering relaxed via crystalline host on multiphase germanium telluride Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Brian F. Donovan, Ronald J. Warzoha, Taylor L. Gray, Elizabeth Getto, Asher Leff, Adam A. Wilson, Laura B. Ruppalt, James G. Champlain
The movement of heat through amorphous solids on an atomic level remains an outstanding question. Recent studies suggest that the primary thermal carrier in amorphous materials, propagons, essentially behaves like phonons. In this work, we provide experimental evidence that shows the interaction between propagons and phonons by utilizing the phase change chalcogenide germanium telluride. A series of
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Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Xinghuan Chen, Zhiyuan He, Yijun Shi, Zeheng Wang, Fangzhou Wang, Ruize Sun, Yiqiang Chen, Yuan Chen, Liang He, Guoguang Lu, Wanjun Chen, Chao Liu, Bo Zhang
In this Letter, we investigate the threshold voltage (VTH) instability of Schottky p-GaN gate high electron mobility transistors (SP-HEMTs) under high-frequency operation by a resistive-load hard switching method. The abnormal VTH instability is observed, which is different between fully and partially depleted SP-HEMTs (FD- and PD-HEMTs). Notably, for FD-HEMT, VTH shifts positively with effective stress
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Meander-gated dual cap GaN HEMT-based portable noninvasive COVID-19 detection platform Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Rajiv Ranjan Thakur, Anil Kumar Saini, Rajeev Taliyan, Nidhi Chaturvedi
In this Letter, an epitaxial and device design has been proposed for the noninvasive detection of COVID-19 using a portable hand-held system. A ∼1.5-fold enhancement in sensitivity was observed for the meander-gated biosensor as compared to the conventional design. The sensitivity was further enhanced by ∼1.70 times when a dual cap layer was used instead of a conventional epitaxial design. A peak sensitivity
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Low-noise inverse magnetoelectric magnetic field sensor Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 L. Thormählen, P. Hayes, E. Elzenheimer, E. Spetzler, G. Schmidt, M. Höft, J. McCord, D. Meyners, E. Quandt
In the development of any type of magnetic field sensor based on magnetic films, special consideration must be given to the magnetic layer component. The presented work investigates the use of scalable flux closing magnetostrictive multilayers for inverse magnetoelectric sensors. In such a type of magnetic field sensor, highly sensitive AC and DC field detection relies on strong excitation of the incorporated
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Demonstration of high-impedance superconducting NbRe Dayem bridges Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 S. Battisti, J. Koch, A. Paghi, L. Ruf, A. Gulian, S. Teknowijoyo, C. Cirillo, Z. Makhdoumi Kakhaki, C. Attanasio, E. Scheer, A. Di Bernardo, G. De Simoni, F. Giazotto
Here, we demonstrate superconducting Dayem-bridge weak-links made of different stoichiometric compositions of NbRe. Our devices possess a relatively high critical temperature, normal-state resistance, and kinetic inductance. In particular, the high kinetic inductance makes this material a good alternative to more conventional niobium-based superconductors (e.g., NbN or NbTiN) for the realization of
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Interfacial second harmonic generation switching with 2D monolayer/VO2 heterostructure Appl. Phys. Lett. (IF 4.0) Pub Date : 2024-04-22 Yuanyuan Li, Tianjie Wang, Liang Li, Min Wang, Jiaxin Xie, Jianhua Chang, Chongwen Zou, Zeming Qi, Qiannan Cui
To establish a facile nonlinear optical switching mechanism activated by thermal field, that is compatible with on-chip integration, we develop a physical model to quantify the interfacial second harmonic generation (SHG) of 2D monolayer/3D phase-changing material heterostructure. Our results show that heat-induced phase transition of VO2 can realize temperature-reversible interfacial SHG switching