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A laboratory-based, low-energy, multi-modal x-ray microscope with user-defined resolution. Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-06-08 Michela Esposito,Lorenzo Massimi,Ian Buchanan,Joseph D Ferrara,Marco Endrizzi,Alessandro Olivo
We report on the development of a low-energy x-ray phase-based microscope using intensity-modulation masks for single-shot retrieval of three contrast channels: transmission, refraction, and ultra-small-angle scattering or dark field. The retrieval method is based on beam tracking, an incoherent and phase-based imaging approach. We demonstrate that the spatial resolution of this imaging system does
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Trench field-effect transistors integrated in a microfluidic channel and design considerations for charge detection. Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-05-13 Dong-Wook Park,Gene Tsvid,Juan P Hernandez-Ortiz,David C Schwartz,Zhenqiang Ma
Field-effect transistors (FETs) combined with a microfluidic system allow for the electrical detection of charged materials moving in a microfluidic channel. Here, we demonstrate trench-shaped silicon FETs with the combination of a microfluidic channel that can be used for simultaneous electrical and optical detection of charged fluorescent beads. The n-channel silicon trench FETs have a maximum transconductance
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Broadband terahertz time-domain polarimetry based on air plasma filament emissions and spinning electro-optic sampling in GaP. Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-05-03 Kuangyi Xu,Mengkun Liu,M Hassan Arbab
We report on a time-domain polarimetry (TDP) system for generating and detecting broadband terahertz (THz) waves of different polarization angles. We generate THz waves from two-color laser filaments and determine their polarization states with a detection bandwidth of up to 8 THz using a spinning gallium phosphide crystal. The polarization of THz emission can be controlled by adjusting the position
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Elliptical-tube off-beam quartz-enhanced photoacoustic spectroscopy Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Zhijin Shang, Hongpeng Wu, Shangzhi Li, Frank K. Tittel, Lei Dong
We propose an elliptical-tube off-beam quartz-enhanced photoacoustic spectroscopy (EO-QEPAS) method in which an elliptical tube is employed as an acoustic resonator, instead of a circular resonator in QEPAS, to match the stripe-like beam emitted from a high-power multimode laser diode (MLD). A lower noise level than that of conventional QEPAS is achieved due to the optimal matching between the elliptical
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Color-tunable organic light-emitting diodes with ultrathin thermal activation delayed fluorescence emitting layer Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Jiaming Zhang, Yuanhe Wang, Shihao Liu, Hongwei Yu, Letian Zhang, Wenfa Xie
Recently, organic light-emitting diodes (OLEDs) are becoming increasingly attractive to information security, wearable healthcare, and other fields. These fields propose different requirements for performances of OLEDs, especially for voltage-controlled color tunability. In this study, it is proposed to use an ultrathin layer consisting of thermally activated delayed fluorescence (TADF) material as
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 P. Quach, A. Jollivet, A. Babichev, N. Isac, M. Morassi, A. Lemaitre, P. A. Yunin, E. Frayssinet, P. de Mierry, M. Jeannin, A. Bousseksou, R. Colombelli, M. Tchernycheva, Y. Cordier, F. H. Julien
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical, and optical investigations attest of high structural quality of the synthetized nitride
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Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Mikołaj Chlipała, Henryk Turski, Mikołaj Żak, Grzegorz Muziol, Marcin Siekacz, Krzesimir Nowakowski-Szkudlarek, Natalia Fiuczek, Anna Feduniewicz-Żmuda, Julita Smalc-Koziorowska, Czesław Skierbiszewski
In this work, we present a GaN-based blue LED construction utilizing bottom tunnel junction (TJ) grown by plasma-assisted molecular beam epitaxy. The setup allows for N-polar-like built-in field alignment while being grown on a Ga-polar substrate. In this study, we present an efficient bottom TJ LED in which the distance between the quantum well and device surface is only 25 nm. This is achieved by
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Realizing single-mode lasing in all-inorganic CsPbBr3perovskite microwires using intrinsic self-absorption Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Junfeng Lu, Chengyu Zhang, Fangtao Li, Ru Wang, Feifei Qin, Gangyi Zhu
Single-mode operation while maintaining a high-quality factor have always been key factors for building high-performance semiconductor lasers. Here, single CsPbBr3 perovskite microwire with a width of ∼3 μm is served as an active microresonator in which a typical single-mode laser output with a quality factor of 3000 is realized through the intrinsic self-absorption effect in success. Simultaneously
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Generation of intense sub-cycle terahertz pulses with variable elliptical polarization Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 X. Ropagnol, E. lsgandarov, X. Chai, S. M. Raeis-Zadeh, S. Safavi-Naeini, M. Reid, F. Blanchard, T. Ozaki
We demonstrate the generation of intense, sub-cycle terahertz (THz) pulses with variable elliptical polarization and peak fields above 80 kV/cm from large aperture photoconductive antennas using a specific interdigitated structure. The latter is composed of horizontal and vertical electrodes, which allow the generation of two quasi-half-cycle THz pulses with orthogonal polarization. A time delay between
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Customizable and highly sensitive 3D micro-springs produced by two-photon polymerizations with improved post-treatment processes Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Xinggang Shang, Ning Wang, Zimeng Wang, Hanqing Jiang, Yunfei Jia, Nanjia Zhou, Min Qiu
Springs are ubiquitous in a variety of scientific and engineering fields. However, the comprehensive study on mechanical properties of micro-spring has not been fully conducted yet due to a lack of reliable productions of varied-shaped micro-springs. Here, we report the design and manufacturing of triple-helix-shaped springs employing two-photon polymerization (TPP) technologies and present a systemic
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AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Heemal Parimoo, Qihua Zhang, Mohammad Vafadar, Jenaes Sivasundarampillai, Songrui Zhao
Despite graphene being an attractive transparent conductive electrode for semiconductor deep ultraviolet (UV) light emitting diodes (LEDs), there have been no experimental demonstrations of any kind of semiconductor deep UV LEDs using a graphene electrode. Moreover, although aluminum gallium nitride (AlGaN) alloys in the format of nanowires are an appealing platform for surface-emitting vertical semiconductor
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30-kHz linewidth interband cascade laser with optical feedback Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Xiang-Yi Li, Zhuo-Fei Fan, Yu Deng, Cheng Wang
Interband cascade lasers are power-efficient mid-infrared laser sources which usually exhibit a spectral linewidth of hundreds of kHz. However, narrower linewidth lasers are more desirable for high-resolution molecular spectroscopy applications. This work narrows the spectral linewidth of an interband cascade laser from about 530 kHz down to about 30 kHz by applying optical feedback from an external
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Ge–Ge0.92Sn0.08core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee, Simone Assali, Lu Luo, Samaresh Das, Oussama Moutanabbir, Samit K. Ray
Recent development on Ge1−xSnx nanowires with high Sn content, beyond its solid solubility limit, makes them attractive for all group-IV Si-integrated infrared photonics at the nanoscale. Herein, we report a chemical vapor deposition-grown high Sn-content Ge–Ge0.92Sn0.08 core–shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 μm. The atomic concentration
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Ultra-high liquid–solid thermal resistance using nanostructured gold surfaces coated with graphene Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Cecilia Herrero, Laurent Joly, Samy Merabia
The search for materials with high thermal resistance has promising applications in thermoelectric devices and boiling crisis retardation. In this paper, we study the interfacial heat transfer between water and gold, nanostructuring the gold surface and coating it with graphene. By trapping air (or vacuum in our simulations) between graphene and the nanopatterned surface, we observe a considerable
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Nanorod orientation control by swift heavy ion irradiation Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-29 Spyridon Korkos, Ville Jantunen, Kai Arstila, Timo Sajavaara, Aleksi Leino, Kai Nordlund, Flyura Djurabekova
Highly energetic ions have been previously used to modify the shape of metal nanoparticles embedded in an insulating matrix. In this work, we demonstrate that under suitable conditions, energetic ions can be used not only for shape modification but also for manipulation of nanorod orientation. This observation is made by imaging the same nanorod before and after swift heavy ion irradiation using a
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Spin-decoupled omnidirectional anomalous refraction based on a single metasurface Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Lili Tang, Yue Cao, Renchao Jin, Ying-Hua Wang, Jiaqi Li, Jin Wang, Zheng-Gao Dong
Taking advantage of the flexible customization of dynamic and Pancharatnam–Berry phases on meta-atoms, spin-decoupled multifunctional metasurfaces have been realized for optical beams of orthogonal circularly polarized lights, which promotes the diverse development of nanophotonic devices. To date, spin-decoupled metasurfaces can only spatially split and deflect beams in coplanar directions not in
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Plasmonic grating for circularly polarized outcoupling of waveguide-enhanced spontaneous emission Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Ilia M. Fradkin, Andrey A. Demenev, Vladimir D. Kulakovskii, Vladimir N. Antonov, Nikolay A. Gippius
Plasmonic metasurfaces form a convenient platform for light manipulation at the nanoscale due to their specific localized surface plasmons. Even despite high intrinsic Joule losses, plasmonic nanoparticles are very effective for light manipulation. Here, we show the lattice of plasmonic nanoparticles onto a dielectric waveguide that efficiently couples oppositely propagating guided modes to circularly
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Realization of broadband coherent perfect absorption of spoof surface plasmon polaritons Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Cong Wang, Xian Shen, Hongchen Chu, Jie Luo, Xiaoxi Zhou, Bo Hou, Ruwen Peng, Mu Wang, Yun Lai
In this work, we propose and demonstrate a scheme to realize broadband coherent perfect absorption of spoof surface plasmon polaritons (SPPs) using an ultrathin conductive film vertically placed on a plasmonic metasurface that supports spoof SPPs. When the conductive film possesses an appropriate sheet resistance, two incident coherent beams of spoof SPP waves can be simultaneously absorbed over a
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Intelligent regulation of VO2-PDMS-driven radiative cooling Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-28 Yang Liu, Yanpei Tian, Xiaojie Liu, Fangqi Chen, Andrew Caratenuto, Yi Zheng
Passive radiative cooling, radiating energy from objects to the outer space through the Earth's atmospheric window, offers promising solutions for passive building cooling and renewable energy harvesting. However, static passive radiative cooling systems with a fixed thermal emissivity cannot automatically regulate emission in response to varying ambient temperature. Here, we propose an intelligent
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The roles of kinematic constraint and diffusion in non-equilibrium solid state phase transformations of Ti-6Al-4V Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Nathan S. Johnson, Donald W. Brown, John S. Carpenter, Behnam Amin-Ahmadi, Craig A. Brice, Branden B. Kappes, Aaron P. Stebner
A solid state phase transformation of Ti-6Al-4V was studied using high speed in situ x-ray diffraction measurements made during rapid cooling of a cold metal transfer arc weld bead deposited onto a water cooled substrate. Analysis of body centered cubic (BCC) and hexagonal close packed (HCP) lattices revealed an abrupt, nonlinear shift in the lattice parameters of both phases just after the HCP phase
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Regulation of energy band and luminescence properties in blue quasi-2D lead bromide perovskite via lattice strain Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Chunyue Cao, Yao Lu, Huitian Li, Dandan Song, Suling Zhao, Zheng Xu, Aliaksandr Smirnov, Bo Qiao
Development of blue quasi-2D lead halide perovskite LEDs is key to the perovskite based full-color displays and white-light illumination. It is still quite challenging to accurately enlarge the bandgap to achieve high performance and stable blue Quasi-2D perovskite LEDs. The lattice strain due to the deformation of lead-bromide octahedra is a critical factor leading to the energy band adjustment and
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Temperature dependent pulsed IV and RF characterization ofβ-(AlxGa1−x)2O3/Ga2O3hetero-structure FET withex situpassivation Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Chinmoy Nath Saha, Abhishek Vaidya, Uttam Singisetti
In this work, we report a study of the temperature dependent pulsed current voltage and RF characterization of β-(AlxGa1−x)2O3/Ga2O3 hetero-structure FETs (HFETs) before and after silicon nitride (Si3N4) passivation. Under sub-microsecond pulsing, a moderate DC-RF dispersion (current collapse) is observed before passivation in gate lag measurements, while no current collapse is observed in the drain
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Critical electric field for transition of thermionic field emission/field emission transport in heavily doped SiC Schottky barrier diodes Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Masahiro Hara, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto
In this study, n-type SiC Schottky barrier diodes (SBDs) with various doping concentrations (Nd=4×1015–1×1019cm−3) were fabricated, and their forward and reverse current–voltage (I–V) characteristics were analyzed focusing on tunneling current. Numerical calculation with the fundamental formula of tunneling current gives good agreement with experimental forward and reverse I–V curves in the heavily
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Resonance Raman scattering on graded-composition WxMo1–xS2alloy with tunable excitons Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Xuhong An, Weiwei Zhao, Yuanfang Yu, Wenhui Wang, Ting Zheng, Yueying Cui, Xueyong Yuan, Junpeng Lu, Zhenhua Ni
Exciton–phonon interactions strongly affect photocarrier dynamics in two-dimensional materials. Here we report on resonant Raman experiments based on a graded composition WxMo1–xS2 alloy with tunable exciton energy without changing the energy of excitation laser. The intensities of the four most pronounced Raman features in the alloy are dramatically enhanced due to the resonance derived from the energy
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Correlation between small polaron tunneling relaxation and donor ionization in Ga2O3 Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Ying-Li Shi, Dong Huang, Francis Chi-Chung Ling, Qi-Sheng Tian, Liang-Sheng Liao, Matthew R. Phillips, Cuong Ton-That
Pulsed laser deposition is employed to fabricate as-grown amorphous and post-growth annealed crystalline β-Ga2O3 films. The films annealed at temperatures above 600 °C are found to exhibit a pure monolithic phase with a bandgap of 4.7 eV. The thermally activated donor ionization and dielectric relaxation of these films are systematically investigated by temperature-dependent DC and AC conductivity
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Record >10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrical properties of Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors (HEMT) grown on a 2-in. single crystal AlN substrate are investigated, and
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The observation of Gaussian distribution and origination identification of deep defects in AlGaN/GaN MIS-HEMT Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Kuan-Chang Chang, Tianjiao Dai, Zhengda Wang, Zhangwei Huang, Xinnan Lin, Lei Li
This paper proposes a math-physical correlative method that monitors deep defect response by electrical measurement and calculates the state density by designed mathematical processing. The extracted Gaussian distribution of deep defects was discussed according to the theoretical model for the density of states. The accuracy of this method was also verified through 1/f low frequency noise analysis
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Origin of the discrepancy between the fundamental and optical gaps and native defects in two dimensional ultra-wide bandgap semiconductor: Gallium thiophosphate Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-28 Tao Shen, Chen Zhang, Chen Qiu, Hui-Xiong Deng
Ultra-wide bandgap (UWBG) semiconductors have great potential for high-power electronics, radio frequency electronics, deep ultraviolet optoelectronic devices, and quantum information technology. Recently, the two-dimensional UWBG GaPS4 was first applied to the solar-blind photodetector in experiments, which was found to have remarkable performance, such as high responsivity, high quantum efficiency
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Schottky contacts to N-polar GaN with SiN interlayer for elevated temperature operation Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-29 Dolar Khachariya, Dennis Szymanski, Pramod Reddy, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
In this Letter, we unveil the high-temperature limits of N-polar GaN Schottky contacts enhanced by a low-pressure chemical vapor deposited (LPCVD) SiN interlayer. Compared to conventional Schottky diodes, the insertion of a 5 nm SiN lossy dielectric interlayer in-between Ni and N-polar GaN increases the turn-on voltage (VON) from 0.4 to 0.9 V and the barrier height (ϕB) from 0.4 to 0.8 eV. This modification
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Atomistic spin model of single pulse toggle switching in Mn2RuxGa Heusler alloys Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 F. Jakobs, U. Atxitia
Single femtosecond-pulse toggle switching of ferrimagnetic alloys is an essential building block for ultrafast spintronics. It is believed that for switching to occur in these ferrimagnets, the individual sublattices must have very different (element-specific) demagnetization dynamics. This suggests that ferrimagnets composed of two different elements, such as rare-earth transition-metal alloys, are
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Chirality-induced effective field in Pt/Co/MgO system with spatial anisotropy-modulation Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 T. Koyama, Y. Nakatani, D. Chiba
In a perpendicularly magnetized (PM) material with the interfacial Dzyaloshinskii–Moriya interaction (iDMI), a chirality-induced effective magnetic field (EMF) acts on a magnetic domain wall, which is a naturally formed in-plane magnetized (IM) region sandwiched by perpendicular (PM) regions. In this study, we artificially created a Pt/Co/MgO system with the regions exhibiting different anisotropy
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Noncollinear magnetic order in epitaxial thin films of the centrosymmetric MnPtGa hard magnet Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 R. Ibarra, E. Lesne, B. Ouladdiaf, K. Beauvois, A. S. Sukhanov, R. Wawrzyńczak, W. Schnelle, A. Devishvili, D. S. Inosov, C. Felser, A. Markou
Magnetic systems exhibiting spin-canted states have garnered much attention recently for their promising rich exotic properties driven by the real-space spin textures and competing magnetic orders. In this study, we present the structural and magnetic properties of hexagonal 60 nm MnPtGa epitaxial thin films grown by magnetron sputtering on Al2O3(0001) single-crystalline substrates. The MnPtGa film
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Modulated terahertz generation in femtosecond laser plasma filaments by high-field spintronic terahertz pulses Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Shaojie Liu, Chenhui Lu, Zhengquan Fan, Shixiang Wang, Peiyan Li, Xinhou Chen, Jun Pan, Yong Xu, Yi Liu, Xiaojun Wu
Strong-field terahertz (THz) light-matter interaction provides various nonlinear control approaches in condensed matter physics, energy and material sciences, electron acceleration, and manipulation. Recently developed spintronic THz emission with minimum complexities has been demonstrated to have the capability for generating high field strengths. Up to now, nonlinear applications based on the spintronic
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Observation of domain structure in non-collinear antiferromagnetic Mn3Sn thin films by magneto-optical Kerr effect Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Tomohiro Uchimura, Ju-Young Yoon, Yuma Sato, Yutaro Takeuchi, Shun Kanai, Ryota Takechi, Keisuke Kishi, Yuta Yamane, Samik DuttaGupta, Jun'ichi Ieda, Hideo Ohno, Shunsuke Fukami
We perform hysteresis-loop measurement and domain imaging for (11¯00)-oriented D019-Mn3+xSn1-x (−0.11≤x≤0.14) thin films using the magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg, comparable with bulk single-crystal Mn3Sn. The composition x dependence of AHE and MOKE shows a similar trend, suggesting
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Crystallographic dependence of the spin Hall angle in epitaxial Pt films: Comparison of optical and electrical detection of spin-torque ferromagnetic resonance techniques Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-28 Bharat Grover, Binoy Krishna Hazra, Tianping Ma, Banabir Pal, Nirel Bernstein, Amit Rothschild, Abhay Kant Srivastava, Samiran Choudhury, Georg Woltersdorf, Amir Capua, Stuart S. P. Parkin
The spin Hall effect appears in nature in two forms. Its intrinsic form is highly dependent on the crystal symmetry while its extrinsic form stems from impurity scattering. Its efficiency is defined by the spin Hall angle, θSH, and has profound impact on spintronic technologies. However, an accurate measurement of θSH is not straightforward nor the identification of its origin. In this work, we apply
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Sub-10-nm ferroelectric Gd-doped HfO2layers Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 E. V. Skopin, N. Guillaume, L. Alrifai, P. Gonon, A. Bsiesy
Sub-10 nm thick gadolinium-doped hafnia (Gd:HfO2) layers were grown in metal–insulator–metal (TiN/Gd:HfO2/TiN) stacks using a plasma-enhanced atomic layer deposition process. Thermally annealed Gd:HfO2 layers with a thickness of 8.8, 6.6, and 4.4 nm exhibited orthorhombic crystalline structure and showed ferroelectric properties. Indeed, polarization vs electric field hysteresis loops were recorded
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Concurrent achievement of giant energy density and ultrahigh efficiency in antiferroelectric ceramics via core–shell structure design Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-28 Longwen Wu, Guitian Lan, Ziming Cai, Lihua Zhao, Jian Lu, Xiaohui Wang
The boom in high-power-density electronics and advanced pulsed power systems has led to a requirement for high-energy-density dielectric capacitors, for which the key enabler is the availability of dielectric materials with high energy densities and high efficiencies. Although antiferroelectric ceramics are promising dielectric materials with high energy densities, they have low efficiencies. In this
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Rashba spin–orbit interaction effect in twisted silicon nanotubes for chiral spintronics Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Pavel N. D'yachkov, Evgeny P. D'yachkov
Using a relativistic symmetrized linear augmented cylindrical wave method, we investigated a formation of spin minigaps due to a torsion strain of the nonchiral hexagonal and gear-like armchair (n, n) and zigzag (n, 0) silicon nanotubes (SiNTs). In the absence of mechanical twisting, the hexagonal (n, n) SiNTs have an inversion symmetry and metallic band structures with the spin-degenerate states at
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Fabrication of (Bi2)m(Bi2Te3)nsuperlattice films by Te desorption from a pristine Bi2Te3film Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 S. Kusaka, T. T. Sasaki, K. Sumida, S. Ichinokura, S. Ideta, K. Tanaka, K. Hono, T. Hirahara
We fabricated superlattice films composed of Bi2 bilayers (BLs) and Bi2Te3 quintuple layers (QLs) by annealing pure Bi2Te3 films. It was found that Te desorbs from the QL to form the BL with an activation energy of 2.7 eV. Eventually, two distinct stoichiometric phases were formed, Bi1Te1 (QL–BL–QL) and Bi4Te3 (QL–BL), as evidenced by scanning transmission emission microscopy measurements. The surface-state
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Impact of the chemical vapor transport agent on polymorphism in the quasi-1D NbS3system Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Matthew A. Bloodgood, Yassamin Ghafouri, Pingrong Wei, Tina T. Salguero
The discovery of another monoclinic polymorph in the niobium trisulfide system expands the structural possibilities for quasi-1D transition metal trichalcogenide materials. We describe here NbS3-VI prepared by chemical vapor transport (CVT) using ammonium chloride as the transport agent rather than the typical iodine or excess chalcogen. This example establishes precedent for transport agent control
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Resistive switching properties of monolayer h-BN atomristors with different electrodes Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Yuan Li, Zhenjun Cui, Yanwei He, Hao Tian, Tianchen Yang, Chengyun Shou, Jianlin Liu
Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average
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Dual functional anode for organic light-emitting devices by directly imprinted nanostructured ultrathin Au film Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Chi Ma, Huan Lou
The ultrathin metal film with excellent electrical conductivity and high visible-band transmittance has attracted considerable attention as a transparent electrode for the organic light-emitting devices (OLEDs). However, the deficient surface morphology and poor continuity of low thickness evaporated metal films and the surface plasmon-polaritons (SPPs) mode induced energy loss still seriously limit
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AlN/GaN/InGaN coupling-channel HEMTs with steep subthreshold swing of sub-60 mV/decade Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 Hao Lu, Ling Yang, Bin Hou, Meng Zhang, Mei Wu, Xiao-Hua Ma, Yue Hao
This work reports an AlN/GaN/InGaN high electron mobility transistor (HEMT) with a steep subthreshold swing (SS) of sub-60 mV/dec utilizing a coupling-channel architecture. The fabricated transistors show a negligible hysteresis, a SS of 39 mV/dec, a large gate voltage swing of >4.2 V, and achieving an excellent quality factor Q = gm/SS of 6.3 μS-dec/μm-mV. The negative differential resistance effect
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Strain-dependent phase-change devices based on vanadium dioxide thin films on flexible glass substrates Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Min Kyun Sohn, Hardeep Singh, Eun-Mi Kim, Gi Seok Heo, Seoung Woo Choi, Do Gi Phyun, Dae Joon Kang
Smart materials offering tunable electrical properties in response to external stimuli are in high demand for their usage in reconfigurable electronics. This study reports the stability and reversibility of insulator-to-metal transition (IMT) in a vanadium dioxide (VO2) thin film grown on flexible glass substrates under the external strain. The systematic application of the external strain was used
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Insights into the charge carrier dynamics in perovskite/Si tandem solar cells using transient photocurrent spectroscopy Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Anaranya Ghorai, Prashant Kumar, Suhas Mahesh, Yen-Hung Lin, Henry J. Snaith, K. S. Narayan
Direct bandgap perovskite and indirect bandgap Si, which form the two active layers in a tandem solar cell configuration, have different optoelectronic properties and thicknesses. The charge-carrier dynamics of the two-terminal perovskite-on-Si tandem solar cell in response to a supercontinuum light pulse is studied using transient photocurrent (TPC) measurements. Spectral dependence of TPC lifetime
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Ultra-broadband light detection based on the light-induced transverse thermoelectric effect of epitaxial PbSe thin films with inclined structure Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Mingjing Chen, Xuyang Chen, Qinyi Wang, Xingkun Ning, Zhiliang Li, Guoying Yan, Xingyuan San, Shufang Wang
PbSe is a simple binary compound that has been studied extensively for use as a promising moderate-temperature thermoelectric material. In this Letter, we report the observation of the light-induced transverse thermoelectric (TTE) effect in c-axis inclined PbSe thin films that were grown epitaxially on c-axis miscut SrTiO3 single crystal substrates using the pulsed laser deposition technique. Because
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Frequency comb in 1:3 internal resonance of coupled micromechanical resonators Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-28 Xuefeng Wang, Qiqi Yang, Ronghua Huan, Zhan Shi, Weiqiu Zhu, Zhuangde Jiang, Zichen Deng, Xueyong Wei
Frequency comb in microelectromechanical systems has attracted many concerns, which is expected to realize great achievements analogous with the optical frequency comb. Previous frequency combs are generated by mode coupling in a single micro-resonator. To pursuit more excellent tunability and robustness, it is impending to create a frequency comb through another way, i.e., coupled but relatively independent
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Extension of on-chip thermometry of metal strips toward sub-10 K regime Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-29 Jiabin Qiao, Ding Zhang
One widely employed method to study thermoelectric effects in nano- and mesoscopic systems is by utilizing on-chip metal strips. However, the standard technique loses sensitivity in the sub-Kelvin temperature regime because the resistance of metal strips saturates. Here, we report a possible solution that can extend the working point from the conventional window (10 to 300 K) down to temperatures below
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Al0.7Sc0.3N butterfly-shaped laterally vibrating resonator with a figure-of-merit (kt2·Qm) over 146 Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-29 Zhifang Luo, Shuai Shao, Kangfu Liu, Yuan Lu, Andrea Mazzalai, Carlo Tosi, Tao Wu
This work presents the laterally vibrating Lamb wave resonators (LVRs) based on a 30% aluminum scandium nitride (Al0.7Sc0.3N) thin film with three interdigited transducer pairs operating in the S0 mode. In order to reduce the anchor loss, perfect matched layer-based finite element analysis simulations are utilized to design and optimize the device. Thanks to the high quality AlScN using magnetron sputtering
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Dense twin and domain boundaries lead to high thermoelectric performance in Sn-doped Cu3SbS4 Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Baobiao Lu, Mingyuan Wang, Jian Yang, Haigang Hou, Xiangzhao Zhang, Zhongqi Shi, Junlin Liu, Guanjun Qiao, Guiwu Liu
Exploring high-performance medium-temperature thermoelectric (TE) materials with nontoxicity and low price is of great significance for waste heat recovery. In spite of low price and nontoxicity, the poor intrinsic electrical properties of Cu3SbS4 restrict its potential commercial applications. Herein, intermediate-phase-free Cu3SbS4-based bulks were fabricated by incorporating a sulfurization process
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Revealing the intrinsic p-to-n transition mechanism on Mg3Sb2through extra Mg Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Xiong Zhang, Xiaoliang Cao, Yu Zhang, Haoshuang Gu, Jibing Liu, Guang Han, Bin Zhang, Guoyu Wang, Xiaoyuan Zhou
The intrinsic p-to-n transition mechanism for Mg3Sb2-based thermoelectrics is revealed through pristine Mg3Sb2 by tunning extra Mg. By using TEM characterization combined with transport measurements, the Mg3Sb2 matrix is proposed to have three stages of evolution with the increase in extra Mg content: Mg vacancy-rich (Sb-rich phase) period, Mg vacancy-compensated (nearly no precipitates) period, and
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Canceling microwave crosstalk with fixed-frequency qubits Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-26 Wuerkaixi Nuerbolati, Zhikun Han, Ji Chu, Yuxuan Zhou, Xinsheng Tan, Yang Yu, Song Liu, Fei Yan
Scalable quantum information processing requires that modular gate operations can be executed in parallel. The presence of crosstalk decreases the individual addressability, causing erroneous results during simultaneous operations. For superconducting qubits which operate in the microwave regime, electromagnetic isolation is often limited due to design constraints, leading to signal crosstalk that
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Nanoscale solid-state nuclear quadrupole resonance spectroscopy using depth-optimized nitrogen-vacancy ensembles in diamond Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-27 Jacob Henshaw, Pauli Kehayias, Maziar Saleh Ziabari, Michael Titze, Erin Morissette, Kenji Watanabe, Takashi Taniguchi, J. I. A. Li, Victor M. Acosta, Edward S. Bielejec, Michael P. Lilly, Andrew M. Mounce
Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena, such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2D materials with magnetic phenomena, inductively detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials
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Erratum: “Pulsed vs dc I–V measurements on AlxV1−xO2 (x = 0–0.013) single crystals: Unmasking a non-thermal electric field effect on these crystals” [Appl. Phys. Lett. 119, 221901 (2021)] Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 L. Patlagan,I. Taitler,G. M. Reisner,B. Fisher
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A gas curtain beam profile monitor using beam induced fluorescence for high intensity charged particle beams Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-25 A. Salehilashkajani,H. D. Zhang,M. Ady,N. Chritin,P. Forck,J. Glutting,O. R. Jones,R. Kersevan,N. Kumar,T. Lefevre,T. Marriott-Dodington,S. Mazzoni,I. Papazoglou,A. Rossi,G. Schneider,O. Sedlacek,S. Udrea,R. Veness,C. P. Welsch
A minimally invasive transverse beam profile monitor based on supersonic gas curtain technology and beam-induced fluorescence has been developed and demonstrated. The concept presented can be used to measure both the profile of the proton beam in the Large Hadron Collider (LHC) and the concentricity of the electron and the proton beams in the LHC hollow electron lens. In this Letter, the performance
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Water as a contrast agent to quantify surface chemistry and physics using second harmonic scattering and imaging: A perspective Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-18 D. Roesel, M. Eremchev, T. Schönfeldová, S. Lee, S. Roke
Molecular level interactions that take place at the interface of different materials determine their local electrical, chemical, and mechanical properties. In the case of solid interfaces, this information has traditionally been obtained with experimental techniques that require ultra-high vacuum conditions. However, these methods are not suitable for studying surface chemistry of aqueous interfaces
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A perspective on electrical generation of spin current for magnetic random access memories Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-19 Christopher Safranski, Jonathan Z. Sun, Andrew D. Kent
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current can be used in two-terminal and three-terminal device geometries. In two-terminal devices, charge-to-spin
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Quantum phonon transport through channels and molecules—A Perspective Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-21 Bernd Gotsmann, Andrea Gemma, Dvira Segal
Phonon transport is a dominant mechanism of thermal conduction in solids that has been studied for decades. A good understanding of many transport regimes in micro- and nanostructures has been established, including ballistic and diffusive transport, mode softening, or band structure engineering in phononic crystals. However, the limit of quantized transport and the engineering of single transport
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Perspective on phase-controlled currents in semiconductors driven by structured light Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-21 Shawn Sederberg, Paul B. Corkum
Controlling electrons with ever-greater precision is central to both classical and quantum electronics. Since the invention of the laser, virtually every property of coherent light has been tamed, making it one of the most precise tools available to science, technology, and medicine. Coherent control involves the transduction of an exquisitely defined property of light to an electronic system, imparting
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Few-layer hexagonal boron nitride as a shield of brittle materials for cryogenic s-SNOM exploration of phonon polaritons Appl. Phys. Lett. (IF 3.971) Pub Date : 2022-04-19 Debo Hu, Cheng Luo, Lixing Kang, Mengkun Liu, Qing Dai
Surface phonon polaritons (SPhPs) in van der Waals (vdW) materials are of great interest in fundamental and applied research fields. Probing the characteristics of vdW SPhPs at cryogenic temperatures is an essential task for their implementation in low-temperature physics. However, the most commonly used characterization technique of vdW SPhPs—scattering-type scanning near-field optical microscopy