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  • Quantum neuromorphic computing
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Danijela Marković; Julie Grollier

    Quantum neuromorphic computing physically implements neural networks in brain-inspired quantum hardware to speed up their computation. In this perspective article, we show that this emerging paradigm could make the best use of the existing and near future intermediate size quantum computers. Some approaches are based on parametrized quantum circuits and use neural network-inspired algorithms to train

    更新日期:2020-10-17
  • Magnetic order in 3D topological insulators—Wishful thinking or gateway to emergent quantum effects?
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    A. I. Figueroa; T. Hesjedal; N.-J. Steinke

    Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counterpropagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This topological surface state crosses the bandgap of the TI and lives at the interface between the topological and a trivial material, such as vacuum. Despite its balanced perfection

    更新日期:2020-10-17
  • A perspective on hybrid quantum opto- and electromechanical systems
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-15
    Yiwen Chu; Simon Gröblacher

    Quantum opto- and electromechanical systems interface mechanical motion with the electromagnetic modes of optical resonators and microwave circuits. The capabilities and promise of these hybrid devices have been showcased through a variety of recent experimental advances that demonstrated exquisite control over the quantum state of solid-state mechanical objects. In this perspective, we offer an overview

    更新日期:2020-10-17
  • Scalable wafer-to-fiber transfer method for lab-on-fiber sensing
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    L. Picelli; A. van Klinken; G. Lindgren; K. D. Hakkel; F. Pagliano; N. Fiaschi; I. Sersic-Vollenbroek; P. J. van Veldhoven; R. W. van der Heijden; A. Fiore

    We present an efficient and flexible method to realize micro- and nano-optical structures on the tip of optical fibers. We demonstrate this approach for a fiber-tip sensor consisting of a photonic crystal (PhC) structure in a semiconductor membrane on the cleaved facet of a telecom fiber. The PhC structure is fabricated on a wafer by lithography and etching and then transferred to the fiber facet by

    更新日期:2020-10-17
  • Photon-avalanche-like upconversion in NdAl3(BO3)4nanoparticles excited at 1064 nm
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Jefferson F. da Silva; Rodrigo F. da Silva; Emanuel P. Santos; Lauro J. Q. Maia; André L. Moura

    We report efficient nonresonant ground-state excitation at 1064 nm of trivalent neodymium (Nd3+) ions in stoichiometric neodymium aluminum borate NdAl3(BO3)4 nanoparticles, which are crystalline and, besides the large content of Nd3+ ions, present excellent photoluminescence properties. Upconversion (UC) emission was observed, and the energy pathways were identified starting from multi-phonon assisted

    更新日期:2020-10-17
  • A tunable plasmonic resonator using kinetic 2D inductance and patch capacitance
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    V. M. Muravev; N. D. Semenov; I. V. Andreev; P. A. Gusikhin; I. V. Kukushkin

    We have studied the microwave response of a high-mobility two-dimensional electron system (2DES) contacted by two side electrodes. Using kinetic inductance of the 2DES and inter-electrode capacitance, we have constructed a subwavelength 2D plasmonic resonator. We have shown that the resonant frequency of this circuit can be controlled by 2D electron density, external magnetic field, or size of the

    更新日期:2020-10-17
  • A highly efficient nanofocusing system for soft x rays
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Yoko Takeo; Hiroto Motoyama; Takenori Shimamura; Takashi Kimura; Takehiro Kume; Yusuke Matsuzawa; Takahiro Saito; Yoichi Imamura; Hiroaki Miyashita; Kentaro Hiraguri; Hirokazu Hashizume; Yasunori Senba; Hikaru Kishimoto; Haruhiko Ohashi; Hidekazu Mimura

    The focusing of x rays is essential in various types of x-ray microscopy because the size and flux of the illuminating beam determine the spatial resolution and signal intensity, respectively. A system with grazing incidence mirrors allows highly efficient x ray focusing with beam dimensions on the nanometer scale. Tube-shaped mirrors with a large numerical aperture and high demagnification, including

    更新日期:2020-10-17
  • Nanotip response to monocycle terahertz pulses
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    J. Houard; L. Arnoldi; A. Ayoub; A. Hideur; A. Vella

    The interaction of monocycle terahertz (THz) fields with metal nanostructures such as nanotips is attracting a lot of interest for the development of new applications such as THz-scanning tunneling microscopy and ultra-fast field emission. New methods have been introduced to measure the enhanced THz near field waveform in the vicinity of a nanotip surface. Here, we present results obtained by electron

    更新日期:2020-10-17
  • Effective linewidth shifts in single-molecule detection using optical whispering gallery modes
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Sivaraman Subramanian; Serge Vincent; Frank Vollmer

    Here, we report shifts of the linewidth of a plasmon enhanced whispering gallery mode (WGM) of a glass microsphere cavity due to binding of single sub-kDa molecules. The observed linewidth of the WGM can either increase or decrease upon binding of single molecules depending on the location of their binding sites. The linewidth shifts arise due to the change in the unresolved frequency splitting of

    更新日期:2020-10-17
  • Substrate oxygen sponge effect: A parameter for epitaxial manganite thin film growth
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Kyeong Tae Kang; Bruce Zhang; Yogesh Sharma; Binod Paudel; Haiyan Wang; Paul Dowden; Aiping Chen

    The emergent phenomena in complex oxide thin films are strongly tied to the oxygen content, which is often engineered by the oxygen partial pressure during growth. However, such oxygen control by the growth pressure is challenging to synthesize for some oxide films, which requires a subtle control of the oxygen content. A parameter of controlling the oxygen content independent of the growth pressure

    更新日期:2020-10-17
  • Reduced contact time of a droplet impacting on a moving superhydrophobic surface
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Xuan Zhang; Zhibing Zhu; Chaoyang Zhang; Chun Yang

    While the droplet impact dynamics on stationary superhydrophobic surfaces has been extensively studied, the dynamic behaviors of impact droplets on moving superhydrophobic surfaces have received less attention. Here, we report the droplet impact dynamics on a moving superhydrophobic surface. We show that compared to the stationary surface, the moving superhydrophobic surface breaks the symmetry in

    更新日期:2020-10-17
  • A non-invasive gating method for probing 2D electron systems on pristine, intrinsic H-Si(111) surfaces
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    L. D. Robertson; B. E. Kane

    Intrinsic Si(111) surfaces passivated with atomic hydrogen are an ideal platform to host two-dimensional electron systems. Traditional methods to probe these surfaces, however, typically involve the placement of dopants and metals directly onto the surface and subsequent high temperature processing, which can be harsh and invasive and lead to surface degradation. Here, we detail a non-invasive gating

    更新日期:2020-10-17
  • Giant enhancing photoresponse at LaAlO3/SrTiO3interfaces by the nickelate buffer layer
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-15
    Ruishu Yang; Cong Bi; Shenggui Zhao; Ming Li; Iqbal. Muhammad Asad; Butt Mehwish Khalid; Kexin Jin

    Manipulating the photoresponse of two-dimensional electron gas at the interface of complex oxides is attracting tremendous interest because of its potential applications in photoelectric devices. In this study, transport behaviors of LaAlO3/SrTiO3 heterointerfaces tuned by a nickelate buffer layer under light irradiation have been investigated. With the increasing thickness of the buffer layer, the

    更新日期:2020-10-17
  • Transition waves in multi-stable metamaterials with space-time modulated potentials
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Vinod Ramakrishnan; Michael J. Frazier

    This Letter introduces a strategy for transition wave (soliton) management in multi-stable mechanical metamaterials, enabling on-demand, post-fabrication control of the associated phase transformation kinetics and distribution. Specifically, the wave dynamics are controlled by a small, kinematically prescribed spatiotemporal variation in the elastic potential, constituting a driving force. The stability

    更新日期:2020-10-17
  • Impact of La–OH bonds on the retention of Co/LaSiO CBRAM
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    J. Radhakrishnan; A. Belmonte; L. Nyns; W. Devulder; G. Vereecke; G. L. Donadio; P. Kumbhare; R. Delhougne; M. Houssa; G. S. Kar; L. Goux

    Co/LaSiO conducting bridge random access memory is a promising candidate for low power storage class memories due to its high endurance and short switching pulse width. Moisture has been hypothesized to be an important parameter in determining device retention. In this study, we anneal the LaSiO layers at different temperatures and pressures in order to reduce the absorbed moisture and improve retention

    更新日期:2020-10-17
  • Realization of multidimensional sound propagation in 3D acoustic higher-order topological insulator
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Fei Meng; Yafeng Chen; Weibai Li; Baohua Jia; Xiaodong Huang

    Higher-order topological insulators (TIs) develop the conventional bulk-boundary correspondence theory and increase the interest in searching innovative topological materials. To realize a higher-order TI with a wide passband of one-dimensional (1D) and two-dimensional (2D) transportation modes, we design three-dimensional non-trivial and trivial sonic crystals whose combination mimics the Su–Schrieffer–Heeger

    更新日期:2020-10-17
  • Acoustic impedance regulation of Helmholtz resonators for perfect sound absorption via roughened embedded necks
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Mingyu Duan; Chenlei Yu; Zhimin Xu; Fengxian Xin; Tian Jian Lu

    Acoustic impedance regulation of a neck embedded Helmholtz resonator is realized by introducing surface roughness to the neck so as to convert the initially non-perfect sound absorber to a perfect sound absorber. The proposed roughened-neck embedded Helmholtz resonator (R-NEHR) achieves perfect sound absorption ( α > 0.999) at 158 Hz across a deep subwavelength thickness of λ / 42. Theoretical predictions

    更新日期:2020-10-17
  • Structural transition and recovery of Ge implantedβ-Ga2O3
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Elaf A. Anber; Daniel Foley; Andrew C. Lang; James Nathaniel; James L. Hart; Marko J. Tadjer; Karl D. Hobart; Stephen Pearton; Mitra L. Taheri

    Ion implantation-induced effects were studied in Ge implanted β-Ga2O3 with the fluence and energy of 3 × 1013 cm−2/60 keV, 5 × 1013 cm−2/100 keV, and 7 × 1013 cm−2/200 keV using analytical electron microscopy via scanning/transmission electron microscopy, electron energy loss spectroscopy, and precession electron diffraction via TopSpin. Imaging shows an isolated band of damage after Ge implantation

    更新日期:2020-10-17
  • A deep neural network interatomic potential for studying thermal conductivity ofβ-Ga2O3
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Ruiyang Li; Zeyu Liu; Andrew Rohskopf; Kiarash Gordiz; Asegun Henry; Eungkyu Lee; Tengfei Luo

    β-Ga2O3 is a wide-bandgap semiconductor of significant technological importance for electronics, but its low thermal conductivity is an impeding factor for its applications. In this work, an interatomic potential is developed for β-Ga2O3 based on a deep neural network model to predict the thermal conductivity and phonon transport properties. Our potential is trained by the ab initio energy surface

    更新日期:2020-10-17
  • Reset-voltage-dependent precise tuning operation of TiOx/Al2O3memristive crossbar array
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Tae-Hyeon Kim; Hussein Nili; Min-Hwi Kim; Kyung Kyu Min; Byung-Gook Park; Hyungjin Kim

    In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed

    更新日期:2020-10-17
  • Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Ziyi Zhang; Maki Kushimoto; Masahiro Horita; Naoharu Sugiyama; Leo J. Schowalter; Chiaki Sasaoka; Hiroshi Amano

    The space charge density profile of the nondoped AlGaN-based p-type cladding layer for UV-C laser diodes realized by distributed polarization doping is examined theoretically and experimentally. The analysis of the capacitance-voltage measurement revealed that the average effective acceptor density of 4.2 × 1017 cm–3 is achieved even without impurity doping, and it is in good agreement with the theoretical

    更新日期:2020-10-17
  • Epitaxial growth ofβ-Ga2O3on (110) substrate by plasma-assisted molecular beam epitaxy
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Takeki Itoh; Akhil Mauze; Yuewei Zhang; James S. Speck

    Epitaxial growth of β-Ga2O3 films on (110) substrates has been performed via plasma-assisted molecular beam epitaxy (PAMBE). The atomic force microscopy scan shows a very low root mean square roughness of 0.08 nm for the surface of the as-received (110) substrates. High-resolution x-ray diffraction measurements reveal a 2.5 nm/min growth rate of β-Ga2O3 films on (110) substrates for conventional PAMBE

    更新日期:2020-10-17
  • Amplifying photocurrent of graphene on GeSn film by sandwiching a thin oxide between them
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    Yanhui Lv; Hui Li; Kuo-Chih Lee; Guo-En Chang; Tung-Ho Shieh; Xiao-Shan Wu; Ching-Ray Chang; Han-Chun Wu; Kuan-Ming. Hung; Hung-Hsiang Cheng

    We report an investigation of the photoresponse of a GeSn film with a graphene layer placed on top and a thin GeO2 layer sandwiched between them. Both wavelength- and power-dependent amplification of the photocurrent are demonstrated. These results are associated with the spatial separation of photoexcited electrons and holes enabled by the thin oxide layer, where electrons and holes accumulate in

    更新日期:2020-10-17
  • Raman scattering in heavily donor dopedβ-Ga2O3
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    A. Fiedler; M. Ramsteiner; Z. Galazka; K. Irmscher

    β-Ga2O3 crystals doped with the donor impurities Si or Sn are investigated by Raman spectroscopy. In addition to the well-known intrinsic Raman allowed phonon modes, we discover several spectral features when the doping concentration exceeds the Mott criterion for the metal-insulator transition (∼ 3 × 1018 cm−3). The most prominent extra Raman peak at 255 cm−1 is an asymmetrically broadened one. It

    更新日期:2020-10-17
  • Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-15
    Lei Li; Ryohei Yamaguchi; Akio Wakejima

    Normally-off AlGaN channel heterostructure field effect transistors (HFETs) have been proposed and investigated numerically by taking advantage of the polarization engineering perspective in III-nitrides. The utilization of polarization-matched InAlN/AlGaN heterostructures shifted the threshold voltage to approximately 1.1 V for an Al0.3Ga0.7N channel HFET. Compared to the AlGaN/GaN HFEF with a low

    更新日期:2020-10-17
  • Dynamic susceptibility of skyrmion clusters in Co/Pt nanodots
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    F. Tejo; E. Saavedra; J. C. Denardin; J. Escrig

    We study the dynamic susceptibility of skyrmion clusters in Co/Pt nanodots using micromagnetic simulations. For this, we investigate the dynamic response of the skyrmions to a small magnetic field pulse applied parallel to the dot axis. Skyrmions exhibit a main resonance peak associated with the skyrmions' breathing mode, which is closely linked to the average radius of the skyrmions. Furthermore,

    更新日期:2020-10-17
  • Quadruple perovskite oxide LaCu3Co2Re2O12: A ferrimagnetic half metal with nearly 100% B-site degree of order
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Zhehong Liu; Qian Sun; Xubin Ye; Xiao Wang; Long Zhou; Xudong Shen; Kai Chen; Lucie Nataf; Francois Baudelet; Stefano Agrestini; Chien-Te Chen; Hong-Ji Lin; Hari Babu Vasili; Manuel Valvidares; Zhiwei Hu; Yi-feng Yang; Youwen Long

    An A- and B-site ordered quadruple perovskite oxide LaCu3Co2Re2O12 was synthesized at 9 GPa and 1323 K. The compound possesses a Pn-3 space group, where both A and B sites are orderly occupied by different cations with a nearly 100% degree of order. Bond valence sum calculations and x-ray absorption spectroscopy confirm the charge distribution to be LaCu2+3Co2+2Re5.5+2O12. A ferrimagnetic phase transition

    更新日期:2020-10-17
  • Current-controlled magnon propagation in Pt/Y3Fe5O12heterostructure
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Md Shamim Sarker; Hiroyasu Yamahara; Hitoshi Tabata

    We present a dynamic spin wave (SW) modulation technique using direct current (DC) to manipulate the magnetic properties of an ultralow-damping Y3Fe5O12 thin film. The microwave excitation and detection technique with two coplanar waveguide antenna arrangements on the Y3Fe5O12 (YIG) surface is used to characterize the SW. An additional platinum (Pt) stripe connected to a current source is integrated

    更新日期:2020-10-17
  • Manipulation of nonlinear magnon effects using a secondary microwave frequency
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-16
    Aneesh Venugopal; Tao Qu; R. H. Victora

    With minimal Joule loss, magnetic insulator-based quantized spin-waves or magnons are becoming increasingly popular for device applications including logic-circuits and signal processing. The parametric excitation-based nonlinear behavior that plays an important role in such applications is also interesting from a physics perspective. In this work, we demonstrate quantitative prediction of the threshold

    更新日期:2020-10-17
  • A memory window expression to evaluate the endurance of ferroelectric FETs
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-15
    Nicolò Zagni; Paolo Pavan; Muhammad A. Alam

    The recent discovery of ferroelectricity in HfO2 has revived the interest into non-volatile memories based on ferroelectric transistors (FeFETs). The key advantages of these FeFETs include the low power consumption and the compatibility with the existing CMOS process. On the other hand, issues related mainly to endurance still represent a challenge to the development of the technology. In this Letter

    更新日期:2020-10-17
  • Low-temperature p-type ohmic contact to WSe2using p+-MoS2/WSe2van der Waals interface
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Kei Takeyama; Rai Moriya; Kenji Watanabe; Satoru Masubuchi; Takashi Taniguchi; Tomoki Machida

    This study demonstrates a low-temperature Ohmic contact to WSe2 using a van der Waals (vdW) junction between highly p-doped MoS2 (p+-MoS2) and WSe2. p+-MoS2 exhibits a large work function comparable to that of a well-known metal such as Pt. Owing to its layered crystal structure, p+-MoS2 can easily be exfoliated to obtain atomically flat, freshly cleaved surfaces. Moreover, it is stable in air; therefore

    更新日期:2020-10-17
  • Strain-induced hierarchical ripples in MoS2layers investigated by atomic force microscopy
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Sabir Hussain; Rui Xu; Kunqi Xu; Le Lei; Lan Meng; Zhiyue Zheng; Shuya Xing; Jianfeng Guo; Haoyu Dong; Adeel Liaqat; Muhammad Ahsan Iqbal; Yan Jun Li; Yasuhiro Sugawara; Fei Pang; Wei Ji; Liming Xie; Zhihai Cheng

    Strain engineering plays a vital role in controlling the physical properties of two-dimensional (2D) materials. However, the nanomechanical behavior of atomically thin 2D crystals under strain has not been completely understood. Here, strain-induced hierarchical ripple nanostructures in triangular MoS2 flakes were investigated by advanced atomic force microscopy and optical spectral measurements. The

    更新日期:2020-10-17
  • Observation of split defect-bound excitons in twisted WSe2/WSe2homostructure
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Cheng Zeng; Jiahong Zhong; Yun-Peng Wang; Juan Yu; Lingkai Cao; Ziliang Zhao; Junnan Ding; Chunxiao Cong; Xiaofei Yue; Zongwen Liu; Yanping Liu

    The excitonic effects in two-dimensional transition metal dichalcogenides and their heterostructures have been extensively investigated. Significantly, the moiré excitons, induced by a moiré superlattice in a twisted heterostructure, have triggered tremendous attention, demonstrating the practicability of artificial excitonic crystals. Besides, recent works have shown that the excitonic states in homostructures

    更新日期:2020-10-17
  • Stacking the MoS2/GeSe2vertical van der Waals heterostructure for memory device
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Jiadong Yao; Yali Liu; Wenxuan Guo; Xinyue Niu; Mengge Li; Xiaoxiang Wu; Ying Yu; Xiaoyuan Yan; Boran Xing; Shucheng Zhang; Jian Sha; Yewu Wang

    Recently, two-dimensional materials have shown great potential in the application of memories due to their atomic thickness and excellent electrical properties. Furthermore, van der Waals heterostructures consisting a variety of two-dimensional materials provide more possibilities for memory research. Here, we design a simple memory device based on the molybdenum disulfide/germanium diselenide (MoS2/GeSe2)

    更新日期:2020-10-17
  • Measurement of angstrom-level laser induced protrusion using touchdown in heat-assisted magnetic recording
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Qilong Cheng; Haoyu Wang; Siddhesh V. Sakhalkar; David B. Bogy

    In heat-assisted magnetic recording (HAMR), a laser is employed above the read-write transducer to provide energy to the media, lowering its coercivity. However, the laser also brings thermal energy diffusion inside the slider and induces an extra angstrom-level protrusion, which we call laser-induced protrusion (LIP). The LIP needs to be taken into consideration in HAMR due to the significance of

    更新日期:2020-10-17
  • High performance planar microcavity organic semiconductor lasers based on thermally evaporated top distributed Bragg reflector
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Yongsheng Hu; Fatima Bencheikh; Sébastien Chénais; Sébastien Forget; Xingyuan Liu; Chihaya Adachi

    High performance organic semiconductor lasers (OSLs), especially those under current injection, have been sought for decades due to their potentially great applications in fields such as spectroscopy, displays, medical devices, and optical interconnection. The design and fabrication of high-quality resonators is a prerequisite for high performance OSLs. In the case of planar microcavities, the fabrication

    更新日期:2020-10-17
  • Electro-thermal co-design ofβ-(AlxGa1-x)2O3/Ga2O3modulation doped field effect transistors
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Bikramjit Chatterjee; Yiwen Song; James Spencer Lundh; Yuewei Zhang; Zhanbo Xia; Zahabul Islam; Jacob Leach; Craig McGray; Praneeth Ranga; Sriram Krishnamoorthy; Aman Haque; Siddharth Rajan; Sukwon Choi

    Ultra-wide bandgap β-gallium oxide (Ga2O3) devices are of considerable interest with potential applications in both power electronics and radio frequency devices. However, current Ga2O3 device technologies are limited by the material's low intrinsic electron mobility and thermal conductivity. The former problem can be addressed by employing modulation-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructures in

    更新日期:2020-10-17
  • C–N-codoped Sb2Te3chalcogenides for reducing writing current of phase-change devices
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    You Yin; Wataru Matsuhashi; Koji Niiyama; Jie Yang; Tao Wang; Jingze Li; Yang Liu; Qi Yu

    In this work, doping C and codoping C and N into the Sb2Te3 traditional chalcogenide were investigated to reduce the writing current of the phase-change device using a chalcogenide as the active medium. No face-centered-cubic (FCC) structure was observed in the C-doped Sb2Te3 film, while it appeared after codoping C and N into Sb2Te3. The FCC crystallite size greatly reduced from 6.5 to 3.5–3.8 nm

    更新日期:2020-10-17
  • Detection of narrow lines in the inhomogeneously broadened line of P1 centers in diamond by double modulation EPR spectroscopy
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-14
    B. Rakvin; D. Carić; M. Kveder

    The study of double modulation continuous wave (CW) electron spin resonance (DM-EPR) is reported to detect narrow “spin-packet”-like lines within an inhomogeneous CW-EPR line of low concentration P1 (Ns0) centers ([Ns0] < 1 ppm) in diamond. These narrow lines appear as peaks at multiples of modulation frequency in the double modulation spectrum. It is shown that the respective line shape can be fitted

    更新日期:2020-10-17
  • On non-Newtonian effects in fluidic shock-absorbers
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    L. Goldstein; D. Ilssar; A. D. Gat

    Shock-absorbers often involve throttling of viscous fluids through small orifices. This gives rise to high rates-of-strain and non-Newtonian behavior even in fluids which are commonly assumed Newtonian, which affects impact mitigation properties. We here derive an asymptotic approximation describing the dynamics of fluidic shock-absorbers while focusing on weak Carreau type non-Newtonian effects and

    更新日期:2020-10-17
  • Calcium-stannous oxide solid solutions for solar devices
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Ned Thaddeus Taylor; Arnaldo Galbiati; Monica Saavedra; Steven Paul Hepplestone

    In this study, solid solutions formed of SnO and CaO [termed (Sn:Ca)xO] are explored as potential solar active layers. The results indicate that a ratio of x = 7 : 1 leads to a fundamental direct bandgap of 1.56 eV. In order to promote the transport of excited charge carriers from within the active layer, appropriately aligned hole/electron transport layers need to be identified. To this end, a set

    更新日期:2020-10-17
  • Thickness-dependent electronic transport induced byin situtransformation of point defects in MBE-grown Bi2Te3thin films
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Min Zhang; Wei Liu; Cheng Zhang; Junhao Qiu; Sen Xie; Fuqiang Hua; Yu Cao; Zhi Li; Hongyao Xie; Ctirad Uher; Xinfeng Tang

    Interactions among various film growth parameters, such as the substrate temperature (Tsub), film thickness (d), and composition, play a crucial role in controlling the type and density of the intrinsic point defects. In turn, the point defects modulate and control electronic transport properties of Bi2Te3 films. We have grown n-type Bi2Te3 films with different d by molecular beam epitaxy at different

    更新日期:2020-10-17
  • An entertaining physics: On the possibility of energy storage enhancement in electrostatic capacitors using the compensational inductive electric field
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-15
    Alexander Khitun

    In this work, we consider the possibility of energy storage enhancement in electrostatic capacitors using the compensational method. The essence of the proposed approach is the use of inductive voltage V ind to partially compensate the electrostatic voltage q / C produced by the electric charges on the capacitor plates. We hypothesize that it may be possible to increase the amount of charge stored

    更新日期:2020-10-17
  • Vortex-induced swing (VIS) motion for energy harvesters and flowmeters
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-16
    Ying Gong; Xiaobiao Shan; Hong Hu; Tao Xie; Zhengbao Yang

    Vortex-induced vibration (VIV) has been widely studied in the fields of vibration control, building construction, and underwater vehicles. Recently, researchers began utilizing the VIV phenomenon for flow energy harvesting. Here, we describe that vortex shedding causes periodic rotational motions and explore these vortex-induced swing (VIS) motions for harvesting flow energy and measuring flow speed

    更新日期:2020-10-17
  • Coherent coupling of a trapped electron to a distant superconducting microwave cavity
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    April Cridland Mathad; John H. Lacy; Jonathan Pinder; Alberto Uribe; Ryan Willetts; Raquel Alvarez; José Verdú

    We theoretically investigate the coupling of a single electron in a planar Penning trap with a remote superconducting microwave (MW) cavity. Coupling frequencies around Ω = 2 π · 1 MHz can be reached with resonators with a loaded quality factor of Q = 10 5, allowing for the strong coupling regime. The electron and the cavity form a system of two coupled quantum harmonic oscillators. This is a hybrid

    更新日期:2020-10-17
  • Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-13
    Jennifer F. Lilieholm; Vasileios Niaouris; Alexander Kato; Kai-Mei C. Fu; Boris B. Blinov

    We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the P 2 1/2 to S 2 1/2 transition in Yb+. The lifetime of the relevant ionic state is longer than that

    更新日期:2020-10-17
  • Studying time-dependent contribution of hot-electron versus lattice-induced thermal-expansion response in ultra-thin Au-nanofilms
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    Peng-Jui Wang; Chih-Chiang Shen; Kuan-Yu Chou; Mu-Han Ho; Jinn-Kong Sheu; Chi-Kuang Sun

    Through the femtosecond-time-resolved study of photoacoustic pulse generation in ultra-thin gold nanofilms, we observed a time delay of 0.5–0.7 ps in the formation of thermal-expansion pulses after photoexcitation. Our observation indicates that lattice anharmonicity dominates over hot electron pressure in the thermal expansion of Au nanofilms under ultrashort-pulsed photoexcitation.

    更新日期:2020-10-17
  • Disentangling nanoscale electric and magnetic fields by time-reversal operation in differential phase-contrast STEM
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-12
    M. Campanini; L. Nasi; F. Albertini; R. Erni

    Differential phase-contrast (DPC) scanning transmission electron microscopy (STEM) has recently attracted significant interest for allowing mapping of electrostatic and magnetic fields at a high spatial resolution. Nevertheless, due to its simultaneous sensitivity to both electrostatic and magnetic fields, the interpretation of DPC measurements on magnetic specimens is not straightforward. In this

    更新日期:2020-10-17
  • Recent twists in twisted light: A Perspective on optical vortices from dielectric metasurfaces
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-06
    Marco Piccardo; Antonio Ambrosio

    Optical vortices are the electromagnetic analogue of fluid vortices studied in hydrodynamics. In both cases, the traveling wavefront, either made of light or fluid, is twisted like a corkscrew around its propagation axis—an analogy that also inspired the first proposition of the concept of optical vortices. Even though vortices are one of the most fundamental topological excitations in nature, they

    更新日期:2020-10-11
  • Forward and backward stimulated Brillouin scattering in aqueous suspension of SiO2spherical nanoparticles
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    V. S. Gorelik; A. F. Bunkin; M. A. Davydov; A. N. Fedorov; S. M. Pershin; A. Yu. Pyatyshev; Mengyuan Wu

    Both backward and forward directed Stimulated Brillouin Light Scattering (SBLS) are observed in an aqueous suspension of SiO2 nanoparticles with diameters of 100 and 200 nm by using for excitation a second harmonic (λ = 532 nm, 10 ns) of a single (∼0.005 cm − 1) mode YAG : N d 3 + laser. Both backward and forward directed SBLS are characterized by a low beam divergence and typically for a water Stokes

    更新日期:2020-10-11
  • Ho:YLF amplifier with Ti:Sapphire frontend for pumping mid-infrared optical parametric amplifier
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    Krishna Murari; Fangjie Zhou; Yanchun Yin; Yi Wu; Bruce Weaver; Timur Avni; Esben Larsen; Zenghu Chang

    We present a Ho:YLF Chirped-Pulse Amplification laser for pumping a longwave infrared Optical Parametric Chirped Pulse Amplifier at a 1 kHz repetition rate. By utilizing a Ti:Sapphire laser as a frontend, 5-μJ seed pulses at 2051 nm laser pulse are generated in a Dual-Chirp Optical Parametric Amplifier, which are amplified to 28 mJ pulses with a pulse duration of 5.6 ps. The scheme offers a potential

    更新日期:2020-10-11
  • Temperature-dependent phase noise properties of a two-section GaSb-based mode-locked laser emitting at 2μm
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    Xiang Li; Hong Wang; Zhongliang Qiao; Jia Xu Brian Sia; Wanjun Wang; Xin Guo; Yu Zhang; Zhichuan Niu; Cunzhu Tong; Chongyang Liu

    The temperature-dependent phase noise properties of a monolithic two-section mode-locked semiconductor laser are first investigated. This is performed on a GaSb-based quantum well laser emitting at ∼2 μm. Stable mode locking operation with a fundamental repetition frequency of ∼13.3 GHz is achieved on this laser up to 60 °C. At a fixed temperature, there is no monotonous dependence of integrated jitter

    更新日期:2020-10-11
  • Reduced screening of remote phonon scattering in thin-film transistors caused by gate-electrode/gate-dielectric interlayer
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    Y. X. Ma; W. M. Tang; P. T. Lai

    Pentacene organic thin-film transistors have been fabricated with their NdTaO gate dielectrics annealed at 200 °C, 400 °C, and 800 °C to study the effects of remote phonon scattering caused by the thermal vibration of the gate dielectric on the carrier transport in the conduction channel. Although the sample annealed at 800 °C can achieve the best dielectric quality (reflected by its lowest oxide-charge

    更新日期:2020-10-11
  • Thermoelectric Si1−xGexand Ge epitaxial films on Si(001) with controlled composition and strain for group IV element-based thermoelectric generators
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    Tatsuhiko Taniguchi; Takafumi Ishibe; Ryoya Hosoda; Youya Wagatsuma; Md. Mahfuz Alam; Kentarou Sawano; Mutsunori Uenuma; Yukiharu Uraoka; Yuichiro Yamashita; Nobuya Mori; Yoshiaki Nakamura

    This study presents the material design of Si1−xGex epitaxial films/Si for thin film thermoelectric generators (TFTEGs) by investigating their thermoelectric properties. The thermoelectric films composed of group-IV elements are advantageous due to their compatibility with the Si process. We fabricated Si1−xGex epitaxial films with various controlled x values and strains using various growth methods

    更新日期:2020-10-11
  • Trapping of multiple H atoms at the Ga(1) vacancy inβ-Ga2O3
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    W. Beall Fowler; Michael Stavola; Ying Qin; Philip Weiser

    Recent suggestions that hydrogen incorporation at the Ga(1) vacancy in β-Ga2O3 may have an impact on its electronic properties have led us to extend our earlier work on these defects. While our previous work provides strong evidence for one, two, and perhaps three or four H trapped into the shifted vacancy configurations introduced by Varley and Kyrtsos, the apparent experimental absence of several

    更新日期:2020-10-11
  • Low temperature homoepitaxy of (010)β-Ga2O3by metalorganic vapor phase epitaxy: Expanding the growth window
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-05
    Arkka Bhattacharyya; Praneeth Ranga; Saurav Roy; Jonathan Ogle; Luisa Whittaker-Brooks; Sriram Krishnamoorthy

    In this work, we report on the growth of high-mobility β-Ga2O3 homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature β-Ga2O3 thin films grown at 600 °C on Fe-doped (010) bulk substrates exhibit remarkable crystalline quality, which is evident from the measured room temperature Hall mobility of

    更新日期:2020-10-11
  • Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-06
    I. Prozheev; F. Mehnke; T. Wernicke; M. Kneissl; F. Tuomisto

    We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 × 10 16 cm−3 to 2 × 10 18 cm−3 in samples with a high C content, strongly correlated

    更新日期:2020-10-11
  • Observation of room-temperature long-lived trapped exciton in WS2/RGO heterostructure
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-06
    Anirban Mondal; Rajesh Kumar Yadav; Megha Shrivastava; Chandra Sekhar Rout; Debjani Karmakar; K. V. Adarsh

    In this Letter, we studied the nature of exciton interactions and lifetimes in the WS2/Reduced graphene oxide (WS2/RGO) heterostructure using femtosecond transient absorption spectroscopy. Our studies demonstrate that the key optoelectronic properties of the heterostructure in the strongly coupled regime are substantially different from those of the control WS2 and RGO, promoting the mixing of electronic

    更新日期:2020-10-11
  • Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-07
    N. Manikanthababu; B. R. Tak; K. Prajna; S. Sarkar; K. Asokan; D. Kanjilal; S. R. Barman; R. Singh; B. K. Panigrahi

    The electrical device characteristics of Ni/β-Ga2O3 vertical Schottky barrier diodes (SBDs) were measured in situ during the irradiation of 120 MeV Ag7+ swift heavy ions (SHIs). These devices exhibit SHI irradiation-induced degradation with 120 MeV Ag7+ ions in the ion fluence ranges of 1 × 1010 to 1 × 1012 ions/cm2. The height of the Schottky barrier is found to decrease from 1.11 to 0.93 eV, and

    更新日期:2020-10-11
  • Influence of electron irradiation and rapid thermal annealing on photoluminescence from GaAsNBi alloys
    Appl. Phys. Lett. (IF 3.597) Pub Date : 2020-10-07
    E.-M. Pavelescu; O. Ligor; J. Occena; C. Ticoş; A. Matei; R. L. Gavrilă; K. Yamane; A. Wakahara; R. S. Goldman

    We have examined the influence of electron irradiation and rapid thermal annealing on photoluminescence emission from GaAsNBi alloys. Electron irradiation of a 1-eV compressively strained GaNAsBi-on-GaAs epilayer, grown by molecular beam epitaxy and subsequently rapidly thermally annealed, is found to induce much stronger photoluminescence than what is observed for an identical as-grown sample upon

    更新日期:2020-10-11
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