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Why is it challenging to improve the thermoelectric properties of n-type Bi2Te3 alloys? Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-07-25 Peyala Dharmaiah, Sung-Jin Jung, Jin-Sang Kim, Seong Keun Kim, Seung-Hyub Baek
The successful application of nanotechnologies in enhancing thermoelectric properties of n-type Bi2Te3 alloys remains a formidable challenge, despite significant advancements in their p-type counterparts. The distinctive challenges inherent to n-type materials include the complex relationships between defect structures and electron concentration, and the strong anisotropy of thermoelectric properties
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Room-temperature field-free valley exciton splitting in monolayer semiconductors achieved by perpendicular magnetic proximity effect Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Penghao Lv, Xiaorong Liang, Chenyue Xu, Guizhou Xu, Feng Xu, Xi Chen
The magnetic proximity effect at ferromagnet/semiconductor interface has been demonstrated as an effective method to generate and control valley splitting states in the semiconductor, which has potential for valley-based information processing devices. However, currently, this method typically requires cryogenic temperature or continuous application of external fields, due to limitation of the ferromagnet
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Broadband high-efficiency meta-holography from all-dielectric quasi-continuous metasurfaces Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Kaifeng Liu, Qinmiao Chen, Yanlin Liu, Shichao Song, Haimo Zhang, Lintong Shi, Mengyao He, Siqi Xiao, Shumin Xiao, Xiaohu Zhang
The compactness and particular optical design make metasurface a competitive candidate for holographic display and storage. Recently, the selection and optimization for the used metasurface structures and types have become research spots. Now the most researched and demonstrated meta-holograms are often based on discrete structures, which can achieve high efficiency but comparatively narrow working
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Coupling competition and energy transfer between C=C and C–H vibration in the process of cascaded stimulated Raman scattering of benzene–methanol solution Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Panpan Ren, Zhiwei Men, Shenghan Wang, Chenglin Sun
We introduced the coupling competition and energy transfer between the C=C and C–H vibration modes in the process of cascaded stimulated Raman scattering (SRS) of benzene and methanol mixtures. The results show that when the molar fraction of methanol is 0.9, the SRS process related to Raman activity can be simultaneously induced in different molecules, and the SRS gains involving a common pump pulse
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GHz-level repetition rate synchronously pumped diamond Raman laser based on bidirectional gain Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Chengjie Zhu, Xuezong Yang, Yuxuan Liu, Muye Li, Yuxiang Sun, Jiajie Fang, Dijun Chen, Weibiao Chen, Yan Feng
In this paper, we demonstrate an ultrafast diamond Raman laser at 1240 nm with a pulse repetition rate of 956.62 MHz, a pulse duration of 39.5 ps, and an average power of up to 3.3 W based on synchronous pumping. The pump source is an electrical-pulse-modulated picosecond pulsed laser at 1064 nm with a repetition rate of 239.16 MHz and a pulse duration of 65.4 ps. A quadrupling repetition rate of the
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Quantum confinement and energy filtering effect enhancing the thermoelectric power factor of InGaAs with buried ErAs nanoparticles Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Ting Meng, Xiwen Zhang, Jinshan Yao, Weiwei Zhang, Hongmei Zhong, Hongda Zhu, Yiyuan Zhang, Hui Zhang, Peng Zhang, Hong Lu, Yang Zhao
Given the strong coupling relationship between the Seebeck coefficient and electrical conductivity, achieving a significant increase in the thermoelectric power factor (PF) remains a formidable challenge. Previous studies have demonstrated that the ErAs:InGaAs system has the potential to leverage the energy filtering (EF) effect to enhance the Seebeck coefficient while maintaining high electron concentrations
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Fabry–Pérot resonances of acoustic waves in disordered slabs Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Tony Valier-Brasier, Adrien Rohfritsch, Ludovic Alhaïtz, Jean-Marc Conoir
The reflection and transmission of acoustic waves by slabs composed of parallel cylinders randomly distributed in a fluid are investigated theoretically, numerically, and experimentally. Measurements of the reflection and transmission coefficients are carried out on samples of concentrations ϕ=20% and ϕ=30% of steel rods immersed in water. These results experimentally highlight the existence of Fabry–Pérot
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Enhanced energy density of LiNi0.5Mn0.3Co0.2O2 batteries with negative-electronic-compressibility thin film coating Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Warakorn Jindata, Supansa Musikajaroen, Unchista Wongpratat, Chutchawan Jaisuk, Suchunya Wongprasod, Nantawat Tanapongpisit, Peerawat Laohana, Natthapon Sripallawit, Theerawee Thiwatwaranikul, Thanapon Muenwacha, Jessada Khajonrit, Wittawat Saenrang, Santi Maensiri, Worawat Meevasana
In this work, we study and compare the electrochemical performance of Li-ion battery (LIB) with and without a BiFe0.95Cu0.05O3 thin film coating. The BiFe0.95Cu0.05O3 thin film is deposited on both LiNi0.5Mn0.3Co0.2O2 (NMC532) cathode and graphite anode electrodes using radio frequency magnetron sputtering. By using galvanostatic charge–discharge measurements, we observe that, in contrast to LIB without
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Kilometer-range, full-Stokes polarimetric imaging LiDAR using fractal superconducting nanowire single-photon detectors Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Yun Meng, Kai Zou, Zifan Hao, Song Li, Thomas Descamps, Adrian Iovan, Val Zwiller, Xiaolong Hu
Full-Stokes polarimetric imaging light detection and ranging (LiDAR) provides rich information about distance, materials, texture, surface orientations, and profiles of objects, and it is an important remote-sensing technology. One major challenge to reach a long distance is to efficiently collect and detect the echo photons, as for long-range LiDAR, echo photons may become sparse. Here, we demonstrate
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Existence probabilities of single Si atoms diffusing in Si(111)-(7 × 7) half-unit cells at room temperature Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 K. Ueda, Z. Diao, L. Hou, H. Yamashita, M. Abe
We determined the probabilities of finding diffusing Si atoms in faulted and unfaulted half-unit cells on the Si(111)-(7 × 7) surface. An adsorbed Si atom on the surface at room temperature moved in the half-unit cells. The atom was adsorbed via atom manipulation and located via under-sampled scanning tunneling microscopy. Images of the half-unit cells with the diffusing Si atom and images of the clean
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Scalable piezoelectric energy harvesting from PVDF-HFP/BZT-BCT/GO hybrid composite film Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Loree Lipsa, Sabyasachi Parida, Sanjay K. Behura, Abhisek Choudhary, Amritendu Roy
Considering the growing demand for piezoelectric energy harvesting from ferroelectric–polymer-based composite materials and the benefits associated with them, this work focuses on piezoelectric energy harvesting from poly(vinylidene fluoride)-co-hexafluoropropylene (PVDF-HFP)/BZT-BCT/GO hybrid composite films synthesized via solution casting followed by the hot-pressing method. Structural properties
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Ultrafast green single photon emission from an InGaN quantum dot-in-a-GaN nanowire at room temperature Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-25 Swagata Bhunia, Ayan Majumder, Soumyadip Chatterjee, Ritam Sarkar, Dhiman Nag, Kasturi Saha, Suddhasatta Mahapatra, Apurba Laha
Single photon emitters, preferably working at room temperature, are crucial components of a diverse set of quantum technologies. Nanowire-supported quantum dots (NWQDs) of InGaN have emerged in the recent past as promising candidates of single photon emission (SPE) at visible wavelengths, though their efficient operation so far has been restricted to cryogenic temperatures. Here, we report the demonstration
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Observation of acoustic meron textures Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Nong Zhou, Wan-Na Chen, Wen-Jun Sun, Zong-Qiang Sheng, Hong-Wei Wu
Merons, as a member of quasiparticle family characterized by half-integer of the skyrmion topological charge with nontrivial topological textures, are of great interest in various branches of physics. Here, we report the first experimental observation of a meron texture configuration in acoustic waves. A squared metastructure is designed to support the spoof acoustic surface wave, forming meron lattice
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Electric field-induced volume change in pyro-vanadate-phosphates: Toward an alternative actuator architecture Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 K. Takada, J. Shibutani, K. Yagi, F. Ikawa, Y. Yokoyama, D. Hirai, Y. Okamoto, N. Katayama, Y. Umena, L. M. G. H. Chavas, T. Hatano, A. Fujita, K. Takenaka
We discovered large electric-field-induced strain in pyro-vanadate-phosphate Cu2−xZnxV1.8P0.2O7. Distinct from conventionally used piezoelectric materials including lead-zirconate-titanate, this material expands almost isotropically at room temperature when an electric field is applied. This volume change, exceeding 1000 ppm under the field of E = 3900 V/cm, is of the largest class induced by an electric
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L-PBF processing and characterization of a Ti35Nb30Zr29Mo3Ta3 multiprincipal element alloy for medical implants Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Farzin Arjmand, Adrien Mourgout, Alima Chali, Madjid Djemai, Credson-Yannick Langueh, Olivier Monasson, Elisa Peroni, Michel Boissiere, Souad Ammar-Merah, Guy Dirras
This Letter reports on the processing, mechanical properties, electrochemical performance, and toxicity behavior of a multiprincipal element Ti35Nb30Zr29Mo3Ta3 alloy. The recovered centimeter-sized cubes or parallelepipeds were polished before analysis. It was found that the homogeneity and yield stress of the alloys get increased when higher volumetric energy densities are applied during processing
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Prominent phonon transmission across aperiodic superlattice through coherent mode-conversion Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Theodore Maranets, Yan Wang
In both particle and wave descriptions of phonons, the dense, aperiodically arranged interfaces in aperiodic superlattices are expected to strongly attenuate thermal transport due to phonon-interface scattering or broken long-range coherence. However, non-trivial thermal conductivity is still observed in these structures. In this study, we reveal that incoherent modes propagating in the aperiodic superlattice
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Room temperature-produced chalcogenide superlattices for interfacial phase-change memory Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 S. Asanuma, N. Miyata, Y. Miyaguchi, K. Horita, T. Jimbo, T. Masuda, J. Tominaga
Phase-change memory (PCM) using chalcogenide films composed of Ge–Sb–Te alloys is the only commercially available nonvolatile memory for storage class memory. Recently, superlattice films of GeTe and Sb2Te3, called interfacial PCM (iPCM), have attracted attention for further increasing the switching speed and reducing energy consumption. It has been reported that the iPCM device exhibits both unipolar-
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Hall effect analysis of boron and nitrogen background concentration in undoped CVD diamond Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 D. D. Prikhodko, V. O. Timoshenko, S. A. Tarelkin, N. V. Kornilov, N. V. Luparev, A. V. Golovanov, T. E. Drozdova, V. D. Blank
Pure single crystal diamond is a superior material for electronic, quantum, and detection applications. The state-of-the-art level of background concentrations of boron and nitrogen in such diamonds is about 1 ppb, which is quite close to the detection limit of the best chemical analysis techniques. In this work, we show that the boron concentration of ∼0.1 ppb causes conductivity of ∼5 kΩ cm of the
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Ultrafast (≈10 GHz) mid-IR modulator based on ultrafast electrical switching of the light–matter coupling Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Mario Malerba, Stefano Pirotta, Guy Aubin, L. Lucia, M. Jeannin, J.-M. Manceau, A. Bousseksou, Q. Lin, J.-F. Lampin, E. Peytavit, S. Barbieri, L. H. Li, A. G. Davies, E. H. Linfield, Raffaele Colombelli
We demonstrate a free-space amplitude modulator for mid-infrared radiation (λ ≈ 9.6 μm) that operates at room temperature up to at least 20 GHz (above the −3 dB cutoff frequency measured at 8.2 GHz). The device relies on the ultrafast transition between weak- and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity
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Nanogap resistive switch mechanism study and performance degradation analysis Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Dacheng Yu, Zhongzheng Tian, Liming Ren, Yunyi Fu
The nanogap resistive switch holds potential as a candidate for nonvolatile memory, although its durability needs enhancement. This study delves into the operational mechanisms through detailed morphological examination during continuous operation of nanogap resistive switches. By developing a finite element model of nanogaps, we reveal the mechanisms behind the formation of electrode surface hillocks
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Epitaxial growth of c-axis inclined Sr3YCo4O10.5+ δ thin film: Insights into laser-induced voltage signals arising from magnetic anisotropy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Hongyuan Song, Ye Kang, Shijin Song, Haorong Wu, Zhenhua Ge, Kun Dong, Lan Yu
We report the laser-induced voltage (LIV) signals in cubic phase Sr3YCo4O10.5+δ (CP-SYCO) thin films with a c-axis tilted and discuss the relationship between the LIV signals and magnetic anisotropy. CP-SYCO thin films were epitaxially deposited on 0°, 5°, 10°, 15°, and 20° miscut LaAlO3 (001) substrates using pulsed laser deposition (laser energy of 200 mJ, post-annealed at 760 °C). The peak voltage
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Tunable magnetic synapse for reliable neuromorphic computing Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Hongming Mou, Zhaochu Luo, Xiaozhong Zhang
Artificial neural networks (ANNs), inspired by the structure and function of the human brain, have achieved remarkable success in various fields. However, ANNs implemented using conventional complementary metal oxide semiconductor technology face significant limitations. This has prompted exploration of nonvolatile memory technologies as potential solutions to overcome these limitations by integrating
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Revisiting thermal transport in CuInTe2: Role of temperature-dependent anharmonicity and higher-order phonon–phonon interactions Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Praveen Yadav, Ankit Jain
The temperature-dependent phonon thermal transport in CuInTe2 is investigated by considering lattice thermal expansion, temperature-dependent anharmonicity, higher-order phonon–phonon interactions, and phonon renormalization with input from first-principles based density functional theory calculations. Incorporating these higher-order temperature-dependent effects reveals that the thermal conductivity
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Theoretical study of metal contacts to the monolayer ferroelectric material CuInP2S6 and its device applications Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Jialong Qi, Huizhen Han, Shuli Yang, Lili Kang, Huabing Yin, Gaofeng Zhao
Two-dimensional (2D) ferroelectric materials exhibit significant potential for applications in nonvolatile memory and device miniaturization. In the device design stage, it is essential to consider the compatibility between 2D ferroelectric materials and three-dimensional (3D) metal. However, the interface between them introduces complex interactions that could impact the device's performance. In this
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Polarization control of lasing from few-layer MoTe2 coupled with the optical metasurface supporting quasi-trapped modes Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 A. V. Prokhorov, A. N. Toksumakov, A. V. Shesterikov, F. M. Maksimov, M. K. Tatmyshevskiy, M. Yu. Gubin, R. V. Kirtaev, E. I. Titova, D. I. Yakubovsky, E. S. Zhukova, V. V. Burdin, S. M. Novikov, A. I. Chernov, D. A. Ghazaryan, A. V. Arsenin, V. S. Volkov
The development of technology for integrating optical metaresonators with two-dimensional and layered van der Waals (vdW) materials opens up broad prospects for the creation of subdiffraction concentrators of electromagnetic energy, surface-emitting lasers, laser displays, and highly efficient nonlinear converters. In this work, we develop a straightforward strategy for the design and fabrication of
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Anisotropic optical response of Nb2SiTe4 under pressure Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 Liangxin Qiao, Chuansheng Hu, Tenglong Lu, Jiluan Zhang, Shiyu Xie, Hengjie Liu, Miao Liu, Zeming Qi
The optical response of a layered anisotropic crystal Nb2SiTe4 was investigated under varying pressure using synchrotron infrared spectroscopy, Raman spectroscopy, and first-principles calculation. This study revealed diverse trends in optical response and bandgap at different pressure levels. Below 5 GPa, the bandgap decreases rapidly due to the reduction of interlayer distance. The Raman and infrared
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Controllable coupling between fundamental modes in an asymmetric superconducting coplanar waveguide resonator Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-24 E. Mutsenik, A. Sultanov, S. Linzen, M. Schmelz, D. Kalacheva, O. Astafiev, G. Oelsner, M. Ziegler, U. Hübner, R. Stolz, E. Il'ichev
Controllable coupling between the odd and even fundamental modes of an asymmetric half-wavelength superconducting coplanar waveguide resonator is demonstrated. The resonant frequency of the even mode Ωe could be tuned by an external magnetic field, while the resonant frequency of the odd mode Ωo is field independent. To realize the tunability of Ωe, the central conductor of the NbN-based resonator
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The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics npj Quantum Inform. (IF 6.6) Pub Date : 2024-07-23 Di Liu, Florian Kaiser, Vladislav Bushmakin, Erik Hesselmeier, Timo Steidl, Takeshi Ohshima, Nguyen Tien Son, Jawad Ul-Hassan, Öney O. Soykal, Jörg Wrachtrup
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Fundamental causal bounds of quantum random access memories npj Quantum Inform. (IF 6.6) Pub Date : 2024-07-23 Yunfei Wang, Yuri Alexeev, Liang Jiang, Frederic T. Chong, Junyu Liu
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3D printing of bio-inspired porous polymeric solar steam generators for efficient and sustainable desalination Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-07-23 Yanbei Hou, Ming Gao, Xueyu Bai, Lihua Zhao, Hejun Du, Kun Zhou
Freshwater scarcity is a pressing issue worldwide, and solar steam generators (SSGs) have emerged as a promising device for seawater desalination, harnessing renewable solar energy to facilitate sustainable water evaporation. The facile fabrication approach for SSG with complex topologies to achieve high water evaporation efficiency remains a challenge. Herein, a MIL-101 (Fe)-derived C@Fe3O4 ink was
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Dual-band complex-amplitude metasurface empowered high security cryptography with ultra-massive encodable patterns Nanophotonics (IF 6.5) Pub Date : 2024-07-23 Zhen Gu, Rensheng Xie, Haoyang Liu, Yiting Liu, Xiong Wang, Hualiang Zhang, Jianjun Gao, Liming Si, Shuqi Chen, Jun Ding
The significance of a cryptograph method lies in its ability to provide high fidelity, high security, and large capacity. The emergence of metasurface-empowered cryptography offers a promising alternative due to its unparalleled wavefront modulation capabilities and easy integration with traditional schemes. However, the majority of reported strategies suffer from limited capacity as a result of restricted
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Nonlinear mid-infrared meta-membranes Nanophotonics (IF 6.5) Pub Date : 2024-07-23 Giovanni Sartorello, Joshua Bocanegra, David Knez, Daniil M. Lukin, Joshua Yang, Jelena Vučković, Dmitry A. Fishman, Gennady Shvets, Maxim R. Shcherbakov
Nanophotonic structures have shown promising routes to controlling and enhancing nonlinear optical processes at the nanoscale. However, most nonlinear nanostructures require a handling substrate, reducing their application scope. Due to the underwhelming heat dissipation, it has been a challenge to evaluate the nonlinear optical properties of free-standing nanostructures. Here, we overcome this challenge
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Phase-matched five-wave mixing in zinc oxide microwire Nanophotonics (IF 6.5) Pub Date : 2024-07-23 Kaibo Cui, Tianzhu Zhang, Tao Rao, Xianghui Zhang, Shunping Zhang, Hongxing Xu
High-order wave mixing in solid-state platforms gather increasing importance due to the development of advanced lasers and integrated photonic circuit for both classical and quantum information. However, the high-order wave mixing is generally inefficient in solids under weak pump. Here, we observed the presence of phase matching of five-wave mixing (5WM) propagating in a zinc oxide (ZnO) microwire
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CMOS-compatible, AlScN-based integrated electro-optic phase shifter Nanophotonics (IF 6.5) Pub Date : 2024-07-23 Valerie Yoshioka, Jicheng Jin, Haiqi Zhou, Zichen Tang, Roy H. Olsson III, Bo Zhen
Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic phase shifting and modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic
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Realization of Yin–Yang kagome bands and tunable quantum anomalous Hall effect in monolayer V3Cl6 Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-23 Fanzheng Chen, Jiajun Lu, Xiuwen Zhao, Guichao Hu, Xiaobo Yuan, Junfeng Ren
Kagome materials serve as crucial platforms for investigating the quantum anomalous Hall effect (QAHE) due to the presence of kagome bands in their electronic structures. However, despite the theoretical predictions being proposed, kagome band material realizations have been limited. In this work, through tight-binding (TB) model analysis, by setting the nearest-neighbor hopping integrals with opposite
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Influence of excess silicon on polytype selection during metal-mediated epitaxy of GaN nanowires Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-23 A. Liu, Z. Xi, M. Li, J. C. Yang, L. Qi, R. S. Goldman
We have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy
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Multi-doping effect on the martensitic transformation behavior of shape memory alloys Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-23 Yuanchao Yang, Jianbo Pang, Pengfei Dang, Yangyang Xu, Lei Zhang, Yumei Zhou, Xiangdong Ding, Jun Sun, Turab Lookman, Dezhen Xue
Incorporating various elements into host shape memory alloys (SMAs) has proven to be an effective strategy for optimizing their functional properties. However, modeling the complex multi-doping effect is challenging. In the present study, we introduced a phenomenological model based on Ginzburg–Landau theory, wherein each doping element is conceptualized as an internal dilatational stress. This internal
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Spin-anomalous-Hall unidirectional magnetoresistance in light-metal/ferromagnetic-metal bilayers Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-07-22 QiKun Huang, Xiaotian Cui, Shun Wang, Ronghuan Xie, Lihui Bai, Yufeng Tian, Qiang Cao, Shishen Yan
Nonreciprocal magnetotransport is one of the central topics in spintronics because of its importance for electrically probing magnetic information. Among numerous electrical probes used to read magnetic orders, unidirectional magnetoresistance (UMR), characterized by sign changes upon reversal of either current or magnetization, is currently a matter of great interest and has been identified in various
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Effect of temperature on the stability and performance of III-nitride HEMT magnetic field sensors Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Satish Shetty, Andrian V. Kuchuk, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Ayesha Hassan, Savannah R. Eisner, Nirosh M. Eldose, Dinesh Baral, Yuriy I Mazur, David Huitink, Debbie G. Senesky, H Alan Mantooth, Gregory J. Salamo
The study aimed to investigate the underlying physics limiting the temperature stability and performance of non-surface passivated Al0.34Ga0.66N/GaN Hall effect sensors, including contacts, under atmospheric conditions. The results obtained from analyzing the microstructural evolution in the Al0.34Ga0.66N/GaN Hall sensor heterostructure were found to correlate with the electrical performance of the
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Significant improvement in sensitivity of an anomalous Nernst heat flux sensor by composite structure Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Hiroto Imaeda, Reiji Toida, Tsunehiro Takeuchi, Hiroyuki Awano, Kenji Tanabe
Heat flux sensors (HFS) have attracted significant interest for their potential in managing waste heat efficiently. A recently proposed HFS, which works on the basis of the anomalous Nernst effect (ANE), offers several advantages in its simple structure leading to easy fabrication, low cost, and reduced thermal resistance. However, enhancing sensitivity through traditional material selection is now
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Ohmic contacts on SnO2 produced by hydrogen plasma treatment Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 I. Chaplygin, Z. Galazka, F. Herklotz, E. V. Lavrov
This study introduces a method for creating Ohmic contacts to tin oxide (SnO2) by subjecting the sample surface to hydrogen plasma treatment at moderate temperatures of about 300 °C. This process generates a surface layer of metallic tin droplets, forming suitable electrical contacts. The contacts exhibit remarkable durability and demonstrate Ohmic behavior down to liquid helium temperatures.
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Manipulating the nonreciprocal microwave transmission by using a pump-induced magnon mode Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Zhijian Chen, Jinwei Rao, K. X. Zhao, Fan Yang, C. X. Wang, Bimu Yao, Wei Lu
We realize the electromagnetic regulation of nonreciprocal microwave transmission by introducing a pump-induced magnon mode (PIM) into a cavity magnonic device with dissipative photon–magnon coupling. As a peculiar spin wave, the PIM's dynamic properties, including its spin number and resonant frequency, can be easily tuned by the microwave pump. Hence, it facilitates the precise control of the coupling
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A high-efficiency hybrid microwave power receiving metasurface array with dual matching of surface impedance and phase gradient Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Han Xiong, Qiang Yang, Yi-Zhe Huang, Xin Wang, Zao Yi, Huai-Qing Zhang
This paper proposes a hybrid microwave power receiving (MPR) metasurface array with efficient dual matching of surface impedance and phase gradient. The hybrid array comprises three components: a reflective phase gradient metasurface (R-PGM) array, a surface wave focusing array, and an energy harvesting port. The R-PGMs efficiently convert incident electromagnetic waves into surface waves. The surface
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Quantification of electron–phonon interaction in bismuth telluride under hydrostatic pressure via ultrafast spectroscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Bowen Guan, Fuxiang Ma, Ruiqi Wu, Yuanfei Jiang, Mingxing Jin, Qingyi Li
Here, we demonstrate a strategy for the quantification of electron–phonon interaction (EPI) of bismuth telluride (Bi2Te3) under hydrostatic pressure through systematic femtosecond pump-probe spectroscopy. Two optical phonon modes, namely A1g and Eg with frequencies of 1.87 and 3.71 THz at ambient pressure, are detected using time-resolved transient reflection (TR) measurement. Frequencies of both coherent
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Study on reliability improvement for p-type FeFinFET under negative-bias temperature instability stress with appropriate fluorine plasma treatment Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Wenqi Zhang, Min-Yen Yeh, Guan-Yu Lai, Bo-Rong Huang, Yi-Lin Yang
This study investigates the effects of fluorine plasma treatment (FPT) on the reliability of p-type ferroelectric fin-shaped field-effect transistors (FeFinFETs) based on Hf0.5Zr0.5O2 (HZO) and subjected to negative bias temperature instability (NBTI). Compared with non-FPT devices, FeFinFETs treated with FPT exhibited higher drive currents and mobility for fresh devices, indicating an improvement
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Clarification of the spontaneous polarization direction in crystals with wurtzite structure Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Simon Fichtner, Mohamed Yassine, Chris G. Van de Walle, Oliver Ambacher
The wurtzite structure is one of the most frequently found crystal structures in modern semiconductors and its inherent spontaneous polarization is a defining materials property. Despite this significance, confusion has been rampant in the literature with respect to the orientation of the spontaneous polarization inside the unit cell of the wurtzite structure, especially for the technologically very
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WS2 monolayer integration in a FAPbI3-based heterostructure Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Jorge Luis Miró-Zárate, Felipe Cervantes-Sodi, Milton Carlos Elias-Espinosa, Skarleth García-Trujillo, Carolina Janani Diliegros-Godines
Incorporating a monolayer of WS2 via interface engineering enhances the overall physical properties of a FAPbI3 perovskite based heterostructure. FAPbI3/WS2/TiO2/ITO and FAPbI3/TiO2/ITO heterostructures were analyzed by UV–Vis spectroscopy, x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The configuration with WS2 interlayer presents higher absorption in the visible region
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Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Xiaoyu Yan, Pengfei Zhai, Chen Yang, Shiwei Zhao, Shuai Nan, Peipei Hu, Teng Zhang, Qiyu Chen, Lijun Xu, Zongzhen Li, Jie Liu
Single-event burnout and single-event leakage current (SELC) in silicon carbide (SiC) power devices induced by heavy ions severely limit their space application, and the underlying mechanism is still unclear. One fundamental problem is lack of high-resolution characterization of radiation damage in the irradiated SiC power devices, which is a crucial indicator of the related mechanism. In this Letter
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Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Alejandro Quevedo, Feng Wu, Tsung-Yin Tsai, Jacob J. Ewing, Tanay Tak, Srinivas Gandrothula, Stephen Gee, Xianqing Li, Shuji Nakamura, Steven P. DenBaars, James S. Speck
V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {101¯1}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally
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Thermal conductance of interfaces between titanium nitride and group IV semiconductors at high temperatures Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Samreen Khan, Xinping Shi, Joseph Feser, Richard Wilson
Measuring the temperature dependence of material properties is a standard method for better understanding the microscopic origins for that property. Surprisingly, only a few experimental studies of thermal boundary conductance at high temperatures exist. This lack of high temperature data makes it difficult to evaluate competing theories for how inelastic processes contribute to thermal conductance
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Frictional aging in microscale structural superlubric graphite contacts Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Yisheng Huang, Ming Ma, Deli Peng, Kaiwen Tian
Devices based on structural superlubricity (SSL) technology are characterized by energy efficiency, low wear, longevity, and superior performance. However, the ubiquitous phenomenon of frictional aging, where static friction increases with contact time, can lead to issues such as startup failure and return-to-origin failure in SSL devices. To date, frictional aging in SSL systems has not been studied
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Ripplocation and kink boundaries in graphene/copper nanolaminates: A molecular dynamics study Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Yunfei Xu, Sen Zhang, Jinchun Shi, YinBo Zhu, Yingqi Li, HengAn Wu, Xiaoyi Liu
Over the past decade, four distinct differences have been summarized regarding ripplocation and kink boundaries in layered solids: spontaneous reversibility, atomic sharpness, delamination, and residual stress. However, according to molecular dynamics simulations, these four distinct differences are not completely applicable to the ripplocation and kink boundaries in graphene/copper nanolaminates.
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Oxygen vacancy engineering in Si-doped, HfO2 ferroelectric capacitors using Ti oxygen scavenging layers Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 N. Barrett, W. Hamouda, C. Lubin, J. Laguerre, C. Carabasse, N. Vaxelaire, J. Coignus, S. Martin, L. Grenouillet
In this paper, the ferroelectric properties of TiN/Ti/Si:HfO2/TiN stacks are shown to be modulated by the Ti oxygen scavenging layer, leading to improved remanent polarization and wake-up at low switching fields. Hard x-ray photoelectron spectroscopy is used to measure the oxygen vacancy (VO) concentration in Si-doped HfO2 based capacitors. This VO engineered ferroelectric stack is then assessed at
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Enhancement of spin Hall angle in semimetallic materials α -Sn under voltage regulation Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Xi Zha, Qi Lu, Jiaqiang Liu, Liwen Liang, Yifan Zhao, Bin Peng, Ming Liu
Utilizing current-induced spin–orbit torque (SOT) to control magnetization is essential for the advancement of spintronics. SOT offers high energy efficiency and rapid operation speed. The ideal SOT material should have a high charge-to-spin conversion efficiency and excellent electrical conductivity. Recently, there has been a focus on topological insulator materials with topological surface states
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Strain mapping in amorphous germanium thin films with scanning reflectance anisotropy microscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Fabian Haake, Joan Sendra, Micha Calvo, Henning Galinski, Ralph Spolenak
Strain imaging is a critical aspect in the design and characterization of opto-electronics, microelectronics, flexible electronics, and on-chip photonics. However, strain mapping techniques are often material specific and strain measurements in amorphous materials remain a challenge. Here, we demonstrate strain mapping and optical characterization of an amorphous semiconductor using scanning reflectance
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Controllable electrical contact characteristics of graphene/Ga2X3 (X = S, Se) ferroelectric heterojunctions Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Xianghe Liu, Yuliang Mao
Reducing the interface barrier between metals and semiconductors is crucial for designing high-performance optoelectronic devices based on van der Waals heterojunctions (HJs). This study proposes four models of HJs composed of graphene (GR) and Ga2X3 (X = S, Se) and systematically investigates their interface electronic properties, along with strain engineering and electric field effects. The results
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Hybrid improper ferroelectricity in La2Sr (Sc1−xFex)2O7 ceramics with double-layered Ruddlesden–Popper structures Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Zhe Guo, Zheng Duan Zhang, Xiao Qiang Liu, Xiang Ming Chen
Numerous hybrid improper ferroelectrics have been discovered in bulk oxides with layered perovskite structures. In contrast, the competition between the interlayer rumpling and oxygen octahedral rotation suppresses the ferroelectricity in layered perovskite material with trivalent cation at the B-site. In the present work, single-phase dense La2Sr(Sc1−xFex)2O7 ceramics with double-layered Ruddlesden–Popper
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Anomalously strong size effect on thermal conductivity of diamond microparticles Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Yufeng Wang, Bo Sun
Diamond has the known highest thermal conductivity of around 2000 W m−1 K−1 and is, therefore, widely used for heat dissipation. In practical applications, synthetic diamond microparticles are usually assumed to have similar thermal conductivity to that of bulk diamond because the particle size is larger than the theoretical phonon mean free path, so that boundary scattering of heat-carrying phonons
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Multilevel magnetoresistance states in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 heterostructure grown on MgO Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Anton Khanas, Christian Hebert, David Hrabovsky, Loïc Becerra, Nathalie Jedrecy
Magnetic tunnel junction (MTJ) is one of the cornerstones of modern information technologies. Bringing MTJ's operation beyond the conventional binary regime, enabled by tunneling magnetoresistance (TMR) effect, is highly promising for prospective memory technologies and neuromorphic hardware development. In this paper, we demonstrate multilevel magnetoresistance states in an all-perovskite-oxide La0
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Fast, universal scheme for calibrating microwave crosstalk in superconducting circuits Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-07-22 Xiao-Yan Yang, Hai-Feng Zhang, Lei Du, Hao-Ran Tao, Liang-Liang Guo, Tian-Le Wang, Zhi-Long Jia, Wei-Cheng Kong, Zhao-Yun Chen, Peng Duan, Guo-Ping Guo
A challenge in building large-scale superconducting quantum processors is the precise control and manipulation of the qubit state. However, the crosstalk between the microwave control lines impedes the parallel execution of high-fidelity digital and analog quantum operations. Here, we propose and demonstrate a universal compensation protocol for calibrating the microwave signal crosstalk. We also introduce