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All-optical switch exploiting Fano resonance and subwavelength light confinement Nanophotonics (IF 6.5) Pub Date : 2025-02-13 Quentin Saudan, Dagmawi A. Bekele, Meng Xiong, Kresten Yvind, Michael Galili, Jesper Mørk
We propose and experimentally demonstrate a small-mode volume bowtie cavity design for all-optical switching applications using a waveguide-cavity structure that exploits asymmetric Fano resonance lineshapes. The bowtie cavity has a mode volume that is five times smaller than conventional (H0-type) photonic crystal point-defect cavities enabling higher nonlinearity and faster switching. Blue and red-detuned
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Artificial intelligence driven Mid-IR photoimaging device based on van der Waals heterojunctions of black phosphorus Nanophotonics (IF 6.5) Pub Date : 2025-02-13 Ziqian Wang, Huide Wang, Chen Wang, Yushuo Bao, Weiying Zheng, Xiaoliang Weng, Yihan Zhu, Yi Liu, Yule Zhang, Xilin Tian, Shuo Sun, Rui Cao, Zhe Shi, Xing Chen, Meng Qiu, Hao Wang, Jun Liu, Shuqing Chen, Yu-Jia Zeng, Wugang Liao, Zhangcheng Huang, Haiou Li, Lingfeng Gao, Jianqing Li, Dianyuan Fan, Han Zhang
Mid-infrared (Mid-IR) photodetection and imaging are pivotal across diverse applications, including remote sensing, communication, and spectral analysis. Among these, single-pixel imaging technology is distinguished by its exceptional sensitivity, high resolution attainable through the sampling system, and economic efficiency. The quality of single-pixel imaging primarily depends on the performance
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Empowering nanophotonic applications via artificial intelligence: pathways, progress, and prospects Nanophotonics (IF 6.5) Pub Date : 2025-02-13 Wei Chen, Shuya Yang, Yiming Yan, Yuan Gao, Jinfeng Zhu, Zhaogang Dong
Empowering nanophotonic devices via artificial intelligence (AI) has revolutionized both scientific research methodologies and engineering practices, addressing critical challenges in the design and optimization of complex systems. Traditional methods for developing nanophotonic devices are often constrained by the high dimensionality of design spaces and computational inefficiencies. This review highlights
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Contextual subspace variational quantum eigensolver calculation of the dissociation curve of molecular nitrogen on a superconducting quantum computer npj Quantum Inform. (IF 6.6) Pub Date : 2025-02-12 Tim Weaving, Alexis Ralli, Peter J. Love, Sauro Succi, Peter V. Coveney
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Morphological-engineering-based capacitive tactile sensors Appl. Phys. Rev. (IF 11.9) Pub Date : 2025-02-12 Hongsen Niu, Hao Li, Ning Li, Hongkai Niu, Song Gao, Wenjing Yue, Yang Li
Capacitive tactile sensors have garnered significant attention due to their simple structure, temperature independence, and wide applicability. However, with the continuous evolution of the intellectualization process, developing tactile sensors that can compare or even surpass the sensing ability of human skin remains a significant challenge. Consequently, various strategies aimed at enhancing sensing
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Transverse orbital angular momentum and polarization entangled spatiotemporal structured light Nanophotonics (IF 6.5) Pub Date : 2025-02-12 Hsiao-Chih Huang, Kefu Mu, Hui Min Leung, Chen-Ting Liao
Intra-system entanglement occurs between non-separable modes within the same system. For optical systems, the various degrees of freedom of light represent different modes, and the potential use of light to create higher dimensional classical entangle states offers a promising potential to drive new technological developments. In this work, we present experimental results demonstrating the orthogonality
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Enhanced optical encryption via polarization-dependent multi-channel metasurfaces Nanophotonics (IF 6.5) Pub Date : 2025-02-12 Minghao Ning, Haozong Zhong, Zhen Gu, Ling-En Zhang, Ning Qu, Jun Ding, Tao Li, Lin Li
Optical encryption offers a powerful platform for secure information transfer, combining low power consumption, high-speed transmission, and intuitive visualization. Metasurfaces, with their unprecedented ability to manipulate light across multiple degrees of freedom within quasi-two-dimensional nanostructures, are emerging as promising devices for advanced encryption. However, encryption capacity
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Multimodal Purcell enhancement and optical coherence of Eu3+ ions in a single nanoparticle coupled to a microcavity Nanophotonics (IF 6.5) Pub Date : 2025-02-12 Timon Eichhorn, Nicholas Jobbitt, Sören Bieling, Shuping Liu, Tobias Krom, Diana Serrano, Robert Huber, Ulrich Lemmer, Hugues de Riedmatten, Philippe Goldner, David Hunger
Europium-doped nanocrystals constitute a promising material for a scalable future quantum computing platform. Long-lived nuclear spin states could serve as qubits addressed via coherent optical transitions. In order to realize an efficient spin-photon interface, we couple the emission from a single nanoparticle to a fiber-based microcavity under cryogenic conditions. The spatial and spectral tunability
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Inductive effect of charge transfer in ferroelectrics and plasmonic Ag heterojunctions for enhanced CO2 photoreduction Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Xiao Liu, Jicong Wang, Wenchao Tian, Yanrui Li, Jing Shi
Converting carbon dioxide into fuel and chemicals by utilizing solar energy represents a cutting-edge approach to carbon recovery and energy renewal. The transfer behavior of photogenerated electrons and built-in electric field of photocatalysts greatly affect the efficiency of the photoreduction reaction. Herein, the heterostructures composed of bismuth sodium titanate (BNT) ferroelectrics and silver
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High-performance GaSb-based interband cascade lasers with a top hybrid cladding Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Wenxiang Huang, Shiyu Hu, Junjie Tu, Peng Wang, Wenquan Ma, Yanhua Zhang, Jianliang Huang
We report high-performance GaSb-based interband cascade lasers (ICLs) with a top hybrid cladding and operating around 3.5 μm at room temperature. Unlike the conventional superlattice (SL) claddings in GaSb-based ICLs, the top cladding of the present ICLs consisted of an n-SL, followed by an n+-InAs0.91Sb0.09 layer, while their bottom claddings entirely consisted of an n-SL. This “asymmetric” waveguide
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Characterization and reduction of RF loss up to 110 GHz by optimizing the UID-GaN layer in N-polar GaN material Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Yu Qi, Yu Zhou, Qian Li, Sheng Cheng, Xiaoning Zhan, Xinkun Zhang, Qingru Wang, Jianxun Liu, Qian Sun, Hui Yang
In this work, the mechanism of RF loss up to 110 GHz for N-polar GaN has been studied. With the assistance of S-parameter characterization combined with secondary ion mass spectroscopy analyses, the incorporated oxygen impurity has been identified to be the main source bringing about the severe RF loss of N-polar GaN. The compensation of Fe-doping enables an effective reduction in RF loss. Moreover
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Ferroelectric tunnel junction based on Zr0.75Hf0.25O2/Al2O3 composite barrier Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Yating Cao, Jingchao Xiao, Haoxin Qiao, Wei Zhang, Yubao Li
Ferroelectric tunnel junction (FTJ) with tunable tunnel electroresistance is promising for emerging nonvolatile memory applications. In this work, 6 nm-thick Hf-doped ZrO2 ferroelectrics with Zr : Hf = 3 : 1 (ZHO), exhibiting a high remanent polarization of 30 μC/cm2, was prepared and further used to build Pt/ZHO/Al2O3/W FTJ devices with adding 1 nm-thick Al2O3 dielectric layer to reduce the leakage
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Enhanced stability and mobility of aligned In2O3 nanofiber field-effect transistors with Y2O3 passivation Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Likun Tian, Yao Dong, Guangtan Miao, Zezhong Yin, Guoxia Liu, Fukai Shan
Field-effect transistors (FETs) based on indium oxide (In2O3) nanofibers demonstrate significant potential for applications in next-generation electronic devices. However, In2O3 nanofiber FETs typically exhibit deteriorated electrical performance and bias stability due to the disordered arrangement of nanofibers and a high concentration of oxygen vacancy defects. In this study, In2O3 nanofibers were
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Terahertz near-zero reflection modulator based on cascaded electrical length reconfiguration Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Chunyang Bi, Sen Gong, Kesen Ding, Liyu Cheng, Huajie Liang, Hongxin Zeng, Lan Wang, Shixiong Liang, Ziqiang Yang, Yaxin Zhang
Return loss is a core indicator of module connectivity performance in integrated communication systems. Reflections from the modulation device can cause power fluctuations, leading to excessive amplitude noise affecting the system's signal-to-noise ratio. To solve the problem of high return loss in existing terahertz amplitude modulation techniques, this paper proposes a near-zero reflection terahertz
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Significant orbit-to-charge conversion in CoFeB/Pt/SrIrO3 trilayer by terahertz emission spectroscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Weiwei Li, Yangkai Wang, Hao Cheng, Jun Huang, Bing Xiong, Jianping Huang, Qiuping Huang, Zhangzhang Cui, Zhengping Fu, Yalin Lu
Orbitronics has been extensively explored theoretically and experimentally in orbital-charge conversion. The spin-charge conversion efficiency induced by the orbital Hall effect can be much larger than that of the spin Hall effect. However, orbitronics focuses primarily on light metal elements and their oxides, while exploring heavy metal elements and oxides is rare. In this Letter, we report significant
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Stacking-dependent tunable valley splitting in Janus SMoSiN2-based van der Waals heterostructure Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Hui Zeng, Weijie Zhang, Chengyu Qiu, Jun Zhao, Dazhi Ding
Using the first principles calculation, we explore the modulation of valley-related properties of two-dimensional (2D) Janus SMoSiN2 monolayer by constructing van der Waals (vdW) heterostructure with the ferromagnet CrCl3 monolayer. The monolayered SMoSiN2 possesses excellent stability and direct bandgap at the K/K′ valley, making it a promising candidate for valleytronic semiconductor. The ferromagnet
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Peculiar spin Hall magnetoresistance in polycrystalline WTe2/Ni80Fe20 heterostructures Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Zong-kui Tian, Zi-yan Luo, Jun-jie Guo, Jin-min Ding, Yao-zhuang Nie, Qing-lin Xia, Yu Zhou, Guang-hua Guo
Charge–spin interconversion is a key issue in spintronics. It gives rise to a series of new phenomena, such as spin Hall magnetoresistance (SMR). In the present work, we report the peculiar SMR behaviors in heterostructures composed of polycrystalline WTe2 nanoplate and Ni80Fe20(Py) film. We observe a negative SMR, which is contrary to the positive SMR usually measured in heavy metal/ferromagnet bilayers
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Giant persistent photoconductivity at room temperature in Sn-based perovskites Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Julie Euvrard, Sadaf Pournia, Oki Gunawan, David B. Mitzi
Long avoided due to adverse effects in traditional optoelectronic devices, persistent photoconductivity (PPC) is now sought-after for emerging technologies, including artificial synapses and coupled solar batteries. We report on a giant PPC effect at room temperature in the mixed Sn/Pb-based perovskite MAPb0.5Sn0.5I3 (MA = methylammonium). Using Hall and photo-Hall measurements, we identify macroscopic
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Spin wave propagation in YIG waveguides with magnetic microvolcanoes: Experiment and simulation Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 A. B. Khutieva, A. V. Sadovnikov, F. E. Garanin, R. A. Anisimov, A. E. Kalinova, X. Chen, Y. Song, S. E. Sheshukova, M. V. Lomova
Control of spin wave transport in polymer 3D films was realized by magnetic microvolcanoes embedded in waveguides, fabricated by soft-matter specific techniques. Propagate of the spin wave signal excited in yttrium iron garnet (YIG) with 3D self-standing microvolcanoes chambers on top filled by the magnetic nanoparticles was evaluated by Brillouin light scattering and microwave spectroscopy. The magnetic
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Exploring the potential of 2D PtTe2-based memristors for neuromorphic computing Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Xiaojuan Lian, Xin Zhang, Shiyu Li, Bingxin Ding, Jiyuan Jiang, Yunbo Zhang, Yufeng Guo, Zhikuang Cai, Lei Wang
Neuromimetic devices have emerged as transformative technologies with the potential to redefine traditional computing paradigms and enable advanced artificial neural systems. Among various innovative materials, two-dimensional (2D) materials have garnered attention as frontrunners for next-generation device fabrication. In this work, we report the fabrication and comprehensive characterization of a
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Energy level alignment of confined hole states in InAs1−x−ySbxPy asymmetric double quantum dots for single-photon energy up- and downconversion Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-12 Karen M. Gambaryan, Owen Ernst, Torsten Boeck, Oliver Marquardt
We present a combined experimental and theoretical study of uncapped In(As, Sb, P) graded composition laterally coupled asymmetric double quantum dots (DQDs), suited for application in nanodiodes or single-photon nano-optical up- and downconverters in the mid-infrared spectral range. We provide details on the growth process using liquid-phase epitaxy and characterization using atomic-force microscopy
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Neural network-based analysis algorithm on Mueller matrix data of spectroscopic ellipsometry for the structure evaluation of nanogratings with various optical constants Nanophotonics (IF 6.5) Pub Date : 2025-02-11 Juwon Jung, Nagyeong Kim, Kibaek Kim, Jongkyoon Park, Yong Jai Cho, Won Chegal, Young-Joo Kim
Accurate and fast characterization of nanostructures using spectroscopic ellipsometry (SE) is required in both industrial and research fields. However, conventional methods used in SE data analysis often face challenges in balancing accuracy and speed, especially for the in situ monitoring on complex nanostructures. Additionally, optical constants are so crucial for accurately predicting structural
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Ultrasensitive metasurface sensor based on quasi-bound states in the continuum Nanophotonics (IF 6.5) Pub Date : 2025-02-11 Ning Li, He Chen, Yunxia Zhao, Yongtian Wang, Zhaoxian Su, Yin Liu, Lingling Huang
The quasi-bound state in the continuum (quasi-BIC) of dielectric metasurface provides a crucial platform for sensing, because its almost infinite Q-factor can greatly enhance the interactions between light waves and the analytes. In this work, we proposed an ultrasensitive all-dielectric metasurface sensor composed of periodic rectangular amorphous silicon pillars on a quartz substrate. By breaking
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Light-induced enhancement of alternating current poling quality and mechanical quality factor in ferroelectric single crystals Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Xinyu Jin, Yu Wang, Xiangda Meng, Bohan Xing, Xing Wen, Jinyu Ruan, Xiaoou Wang, Chengpeng Hu, Peng Tan, Hao Tian
Alternating current poling (ACP) and light fields have been studied as domain engineering methods for regulating the domain structures and improving the physical properties of ferroelectric crystals because of their convenience, effectiveness, and economic advantages. In this study, we propose a LACP method (ACP under above-bandgap light illumination), by which the transparency and electro-optic properties
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All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Kornelius Tetzner, Andreas Thies, Enrico Brusaterra, Alexander Külberg, Pallabi Paul, Ina Ostermay, Joachim Würfl, Oliver Hilt
In this work, we report on the fabrication of all-implanted β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) devices on semi-insulating (-201) β-Ga2O3 substrates. Through the use of multiple energy Si+ implantation and subsequent annealing, we were able to achieve high activation efficiencies up to 87% allowing to realize the active transistor channel and Ohmic contact regions with
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Universal scaling of electrostatic effects of a curved counter-electrode on the emitter field enhancement Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Thiago A. de Assis, Fernando F. Dall'Agnol
Experiments on field electron emission from single-tip nanoemitters have typically been carried out using a counter-electrode with a finite curvature radius R, positioned at a distance dgap from the emitter's apex. The effects of the counter-electrode's curvature on the apex field enhancement factor (γCa) of the emitter are still not understood. In this Letter, we theoretically explore how the apex
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Topographically selective atomic layer deposition within trenches enabled by an amorphous carbon inhibition layer Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Thijs Janssen, Lodewijk J. P. Vossen, Marcel A. Verheijen, Wilhelmus M. M. Kessels, Adriaan J. M. Mackus
To meet the demands for more advanced computer chips, creating devices with advanced 3D architectures is becoming commonplace in the semiconductor industry. To ensure alignment between the different layers, the bottom-up technique of area-selective deposition (ASD) is promising. However, ASD may not always be feasible depending on the various surface chemistries present during manufacturing of complex
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Low-frequency noise and DC I–V characterization of gamma-ray irradiation-induced degradation and trap behaviors in a-IGZO TFTs Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Hongseung Lee, Jaewook Yoo, Hyeonjun Song, Binhyeong Lee, Soon Joo Yoon, Seongbin Lim, Jo Hak Jeong, Soyeon Kim, Minah Park, Seohyeon Park, Sojin Jung, Bhishma Pandit, Taehwan Moon, Jin-Ha Hwang, Kiyoung Lee, Yoon Kyeung Lee, Keun Heo, Hagyoul Bae
This work reports the impact of gamma-ray (γ-ray) irradiation-induced degradation based on the trap behaviors in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. By employing multiple measurement configurations via low-frequency noise and direct current I–V characterization, we quantitatively investigated the energetic distribution of subgap density-of-states in the a-IGZO channel
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Heterostructure and interfacial engineering for low-resistance contacts to ultra-wide bandgap AlGaN Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Yinxuan Zhu, Andrew A. Allerman, Chandan Joishi, Jonathan Pratt, Agnes Maneesha Dominic Merwin Xavier, Gabriel Calderon Ortiz, Brianna A. Klein, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan
We report on the heterostructure and interfacial engineering of metalorganic chemical vapor deposition (MOCVD) grown reverse graded contacts to ultra-wide bandgap AlGaN. A record low contact resistivity of 1.4 × 10−6 Ω cm2 was reported on an Al0.82Ga0.18N metal-semiconductor field effect transistor by compositionally grading the contact layer from Al0.85Ga0.15N → Al0.14Ga0.86N with degenerate doping
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Anti-irradiation reinforcement in NiFe/oxide composite structure by electronic reconstruction and structural stabilization for efficient magnetoresistive sensor in aerospace/radiotherapy applications Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Ronggui Zhu, Tong Guo, Lei Ding, Fei Meng, Boyi Wang, Yu Qi, Xutong Meng, Baohe Li, Chun Feng, Guanghua Yu
The construction of irradiation-tolerant anisotropic magnetoresistance (AMR) sensors is crucial for weak-field detection in scenarios of aerospace and radiotherapy. Presently, the utilization of the NiFe/oxide composite structure was considered to be an effective scheme to optimize the spin-dependent transport property; however, it exhibited poor anti-irradiation ability due to the crystal instability
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Oxygen impurities in AlN and their impact on optical absorption Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Qimin Yan, John L. Lyons, Luke Gordon, Anderson Janotti, Chris G. Van de Walle
Oxygen is a common impurity in AlN samples. Using hybrid density functional calculations, we investigate the role of substitutional oxygen (ON) in the optical absorption. We construct configuration coordination diagrams for ON and related complexes. Our results indicate that an optical transition involving ON− (a DX center) gives rise to an absorption band peaked at 2.22 eV, suggesting it is a source
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Construction of oriented Zn (002) facets via 3D conductive frameworks for enhanced performance in fiber-based zinc-ion batteries Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Hang Lei, Xincheng Zhou, Zhiheng Chen, Yongyin Liang, Daping Qiu, Xuelin Yang, Zilong Wang, Wenjie Mai
Zinc-ion batteries (ZIBs) are poised to play a pivotal role in the future energy storage market. However, the undesired growth of zinc dendrites and the prevalence of side reactions pose significant challenges that limit the practical application of ZIBs. The sophisticated structural design and crystal orientation of the Zn anode can effectively suppress the occurrence of zinc dendrites and side reactions
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Li-ion storage characteristics and migration mechanisms of intrinsic, doped, and oxygen-deficient CeO2 and La2O3: A study using DFT+U Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 Yucheng Hu, Na Jin, Lei Sun, Ying Liu, Xin Tian
Rare-earth oxides (REOs) represented by CeO2 and La2O3 became a focal point in the study of Li-ion battery (LIB) electrode materials. However, leveraging defects to tune the intrinsic electronic structure of REO to enhance electrochemical performance, as well as understanding the underlying physical mechanisms at the atomic level, remained an open challenge. Density functional theory plus U calculations
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Oxygen vacancy distribution and phase composition in scaled, Hf0.5Zr0.5O2-based ferroelectric capacitors Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-11 T. Iung, L. Pérez Ramírez, A. Gloskovskii, C.-Yi Cho, M.-Y. Lao, S. De, T.-H Hou, C. Lubin, M. Gros-Jean, N. Barrett
In this paper, we address correlations between film thickness, phase composition, and oxygen vacancy (VO) distribution in scaled, hafnia-based ferroelectric capacitors (FeCAPs), necessary to achieve low operating voltages, higher endurance, and advanced node integration. Using x-ray photoelectron spectroscopy, hard x-ray photoelectron spectroscopy, grazing incidence x-ray diffraction, and electrical
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Bond dipole-based geometric theory of band alignment Appl. Phys. Rev. (IF 11.9) Pub Date : 2025-02-10 Zeyu Jiang, Damien West, Shengbai Zhang
The band alignment (BA) between two materials is a fundamental property that governs the functionality and performance of electronic and electrochemical devices. However, despite decades of study, the inability to separate surface properties from those of the bulk has made a deep understanding of the physics of BAs elusive. Building on the theory of the ideal vacuum level to separate surface from bulk
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Nonlinear domain engineering for quantum technologies Appl. Phys. Rev. (IF 11.9) Pub Date : 2025-02-10 Tim F. Weiss, Alberto Peruzzo
The continuously growing effort toward developing real-world quantum technological applications has come to demand an increasing amount of flexibility from its respective platforms. This review presents a highly adaptable engineering technique for photonic quantum technologies based on the artificial structuring of the material nonlinearity. This technique, while, in a simple form, already featured
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Polarization-insensitive microwave power receiving composite array based on reflection phase gradient metasurfaces Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Yi-Zhe Huang, Qiang Yang, Han Xiong, Huai-Qing Zhang
This paper presents a polarization-insensitive microwave power receiving composite metasurface array. The composite array consists of a reflection phase gradient metasurface array and a horizontal omnidirectional antenna, with a central operating frequency of 5.8 GHz. The reflection phase gradient metasurface array elements are insensitive to the polarization of the incident wave and are arranged radially
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Native antisite defects in h-BN Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Song Li, Pei Li, Adam Gali
Hexagonal boron nitride (hBN) is an excellent host for solid-state single phonon emitters. Experimental observed emission ranges from infrared to ultraviolet. The emission centers are generally attributed to either intrinsic or extrinsic point defects embedded into hBN. Nevertheless, the microscopic structure of most of these defect emitters is uncertain. Here, through density-functional theory calculations
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Distinct effects of Na and heavy alkali (K, Rb) incorporation in Cu(In, Ga)Se2 solar cells Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Yinglin Guan, Qinglin Zhang, Ye Xiao, Minru Wen, Le Huang
Density functional theory calculations are performed to explore the nature of the alkali incorporation in Cu(In, Ga)Se2 (CIGS) thin-film solar cells. It is revealed that all the alkalis (Na, K, Rb) prefer to accumulate in the surface region of the absorber with occupying Cu sites. A hole barrier can be introduced in the absorber surface region, and the electron barrier at CdS/CuInSe2 interface is nearly
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Enhanced near-infrared photoresponse of SnS2 nanosheets by Er–Yb co-doping Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Lei Wang, Tengfei Huang, Ruipeng Hou, Baocheng Yang
Rare earth (RE) ions are important dopants to modulate semiconductor properties because of their abundant energy levels. Herein, a simple Er–Yb co-doping strategy was developed to enhance the near-infrared optoelectronic properties of SnS2 nanosheets. The constructed device based on Er–Yb co-doping SnS2 has a detectivity of ∼4.97 × 108 Jones at 980 nm. The enhanced photoresponse of the doped system
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Enhanced piezoelectricity in TiSXY monolayers based on electronegative polar moments effect Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Dai-Song Tang, Yu-Qing Luo, Dan-Yang Zhu, Jun-Hui Wang, Xian-Tong Shao, Shou-Xin Cui, Xiao-Chun Wang
It is a challenge to find the relationship between the microscopic property of atoms in monolayers and the macroscopic piezoelectricity of monolayer. By first-principles calculation, we find not only the super-dipole moment (SDM) effect but also the electronegative polar moments (EPMs) effect, which can lead to the remarkable piezoelectricity in TiSXY monolayers. The SDM and EPM effects can deepen
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Direct measurement of thermal Knudsen forces in rarefied gas environments Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Greg I. Acosta, Amun Jarzembski, Mohammad Ghashami
At micro- and nanoscales, momentum transfer between surfaces is influenced by various physical mechanisms, including quantum fluctuations, electromagnetic interactions, electric charges, and the dynamics of (rarefied) gases. Under non-isothermal conditions, rarefied gases give rise to thermal Knudsen forces whose magnitudes strongly depend on the gas species and surface characteristics. Knudsen forces
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Evolution of point defects in Bi2Te3-based materials and performance of thermoelectric modules subjected to γ -irradiation Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Yixiao Deng, Wenbin Qiu, Kaiyi Luo, An Li, Kai Luo, Geyang Wu, Pingping Qian, Haowen Chen, Lei Yang, Jun Tang
Bismuth telluride (Bi2Te3), renowned for its exceptional thermoelectric (TE) properties near room temperature, is used in extreme environments such as deep space exploration, leading to extensive attention on the radiation-induced defects to Bi2Te3. However, the evolution of point defects during gamma (γ)-irradiation is still poorly understood. In this paper, we report the evolution of point defects
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Design guidelines for Si metal–oxide–semiconductor and Si/SiGe heterostructure quantum dots for spin qubits Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Yu-Cheng Li, Che-Hao Chang, Yu-Jui Wu, Chen-Yao Liao, Jiun-Yun Li
Si-based spin qubits are promising due to their long decoherence time and the compatibility with state-of-the-art semiconductor technology and have been demonstrated using quantum dots (QDs) to host single electrons for spin manipulation. In this work, we simulate the electrostatics and quantum transport properties of quantum dots on a Si metal–oxide–semiconductor platform and a Si/SiGe heterostructure
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Anisotropic phonon responses of 2D NbOX2 (X=Cl, Br, I) under uniaxial tensile strain Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Xiaoyue Fan, Ziling Shen, Deng Hu, Youning Liu, Tianhong Tang, Wenchen Yang, Haiyang Liu, Yuxin Song, Qinsheng Wang, Baoli Liu, Zhiwei Wang, Jin-Jian Zhou, Gang Wang
The van der Waals crystal NbOX2 (X = Cl, Br, I) has recently attracted much attention due to its remarkable in-plane anisotropy and substantial second-order nonlinear optical response. Moreover, the importance of modulating its physical properties through strain has become increasingly prominent. Herein, we investigate the anisotropic phonon response of NbOX2 along various crystallographic directions
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Al2O3/in situ GaON gate dielectrics incorporated GaN MIS-HEMTs with stable VTH and significantly reduced interface state density Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Tian Luo, Sitong Chen, Ji Li, Fang Ye, Zhehan Yu, Wei Xu, Jichun Ye, Wei Guo
This work reports a metal–insulator–semiconductor High-Electron-Mobility-Transistor (HEMT) with Al2O3/in situ GaON bi-layer gate dielectric for improved threshold voltage (VTH) stability and reduced interface state density. With a combination of in situ GaON and large bandgap Al2O3 on top of the recessed gate region, normally-off HEMT was achieved with high On/Off current (ION/IOFF) ratio of 109, low
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ZnO/Cu2S PN-junctions with built-in electric field for enhanced CO2 electroreduction Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Daojian Ye, Weiyang Xu, Wenda Zhou, Xingfang Luo, Yong Yang, Ting Yu, Wen Lei, Cailei Yuan
A full stack strategy, including facilitating the capture of CO2 molecules on catalysts, regulating intermediates, and releasing products, is highly needed to break the bottleneck for CO2 electroreduction to CO. The electric field is expected to promote capture of CO2, reduce energy barriers of reaction, and efficiently release CO, boosting the overall CO2 reduction reaction (CO2RR) activities. In
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Strong interface coupling for enhanced photoresponse in 1D BiInSe/2D WSe2 phototransistor Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Shuo Liu, Xinyun Zhou, Wanglong Wu, Junda Yang, Ruiying Ma, Le Yuan, Qinglin Xia, Mianzeng Zhong, Jun He
With the improvement of heterostructure preparation technology, research on the physical properties and device performance of mixed-dimensional heterostructures has been greatly developed. Numerous studies have focused on 2D/2D heterostructures, but research on 1D/2D heterostructures is comparatively limited, and the interface electron transfer mechanism needs to be further explored. In this study
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3 kV fully vertical β-Ga2O3 junction termination extension Schottky barrier diode with sputtered p-GaN Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Qingyuan Chang, Bin Hou, Ling Yang, Mao Jia, Youjun Zhu, Mei Wu, Meng Zhang, Qing Zhu, Hao Lu, Jiarui Xu, Chunzhou Shi, Jiale Du, Qian Yu, Mengdi Li, Xu Zou, Haolun Sun, Xiaohua Ma, Yue Hao
In this work, we present the fabrication of a fully vertical β-Ga2O3 Schottky barrier diode with junction termination extension (JTE-SBD) utilizing a p-GaN layer produced by sputtering, offering a solution to the absence of p-Ga2O3 materials. The p-GaN/n-Ga2O3 JTE-SBD demonstrates a turn-on voltage (Von) of 0.8 V, a specific on-resistance (Ron,sp) of 6.15 mΩ·cm2, an ideality factor (n) of 1.24, a breakdown
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High thermal durability and thermoelectric performance with ultra-low thermal conductivity in n-type single-walled carbon nanotube films by controlling dopant concentration with cationic surfactant Appl. Phys. Lett. (IF 3.5) Pub Date : 2025-02-10 Hisatoshi Yamamoto, Takuya Amezawa, Yutaro Okano, Koki Hoshino, Shuya Ochiai, Kento Sunaga, Shugo Miyake, Masayuki Takashiri
Single-walled carbon nanotubes (SWCNTs) are promising candidates for use in thermoelectric generators (TEGs) to power Internet of Things (IoT) sensors. For practical applications, the major challenge for SWCNTs is improving the thermoelectric performance and thermal durability of n-type SWCNT films. Here, SWCNT inks were prepared using a dopant, which is a cationic surfactant of dimethyldioctadecylammonium
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Broadband perfect Littrow diffraction metasurface under large-angle incidence Nanophotonics (IF 6.5) Pub Date : 2025-02-08 Jingyuan Zhu, Siliang Zhou, Tao He, Chao Feng, Zhanshan Wang, Siyu Dong, Xinbin Cheng
Littrow diffraction devices are commonly used in the laser field (e.g., laser resonators and spectrometers), where system integration requires larger incidence angles and perfect broadband efficiency. Compared to traditional diffraction devices, which struggle to manipulate light paths under large-angle incidence, metasurfaces has the potential to enhance the broadband efficiency. Despite quasi three-dimensional
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Electrochemically modulated single-molecule localization microscopy for in vitro imaging cytoskeletal protein structures Nanophotonics (IF 6.5) Pub Date : 2025-02-08 Chenghong Lei, Dehong Hu
A new concept of electrochemically modulated single-molecule localization super-resolution imaging is developed. Applications of single-molecule localization super-resolution microscopy have been limited due to insufficient availability of qualified fluorophores with favorable low duty cycles. The key for the new concept is that the “On” state of a redox-active fluorophore with unfavorable high duty
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Photonic neural networks at the edge of spatiotemporal chaos in multimode fibers Nanophotonics (IF 6.5) Pub Date : 2025-02-08 Bahadır Utku Kesgin, Uğur Teğin
Optical computing has gained significant attention as a potential solution to the growing computational demands of machine learning, particularly for tasks requiring large-scale data processing and high energy efficiency. Optical systems offer promising alternatives to digital neural networks by exploiting light’s parallelism. This study explores a photonic neural network design using spatiotemporal
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Data-efficient prediction of OLED optical properties enabled by transfer learning Nanophotonics (IF 6.5) Pub Date : 2025-02-08 Jeong Min Shin, Sanmun Kim, Sergey G. Menabde, Sehong Park, In-Goo Lee, Injue Kim, Min Seok Jang
It has long been desired to enable global structural optimization of organic light-emitting diodes (OLEDs) for maximal light extraction. The most critical obstacles to achieving this goal are time-consuming optical simulations and discrepancies between simulation and experiment. In this work, by leveraging transfer learning, we demonstrate that fast and reliable prediction of OLED optical properties
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Realizing electronically reconfigurable intrinsic chirality: from no absorption to maximal absorption of any desirable spin Nanophotonics (IF 6.5) Pub Date : 2025-02-08 Muhammad Ismail Khan, Tayyab Ali Khan, Moustafa Abdelbaky, Alex M. H. Wong
Circular dichroism – the spin-selective absorption of light – finds diverse applications in medicine, antennas and microwave devices. In this work, we propose and experimentally demonstrate an ultrathin electronically reconfigurable chiral metasurface which exploits the intrinsic symmetries of the meta-molecule to realize any spin absorption based on the handedness of the chirality chosen. We construct
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Universal validity of the second law of information thermodynamics npj Quantum Inform. (IF 6.6) Pub Date : 2025-02-07 Shintaro Minagawa, M. Hamed Mohammady, Kenta Sakai, Kohtaro Kato, Francesco Buscemi
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Remote cooling of spin-ensembles through a spin-mechanical hybrid interface npj Quantum Inform. (IF 6.6) Pub Date : 2025-02-07 Yang Wang, Durga Bhaktavatsala Rao Dasari, Jörg Wrachtrup
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Microscopic parametrizations for gate set tomography under coloured noise npj Quantum Inform. (IF 6.6) Pub Date : 2025-02-06 P. Viñas, A. Bermudez
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All-optical image transportation through a multimode fibre using a miniaturized diffractive neural network on the distal facet Nat. Photon. (IF 32.3) Pub Date : 2025-02-07 Haoyi Yu, Zihao Huang, Simone Lamon, Baokai Wang, Haibo Ding, Jian Lin, Qi Wang, Haitao Luan, Min Gu, Qiming Zhang
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Gate-voltage control of anisotropic bilinear magnetoresistance at Rashba interfaces Appl. Phys. Rev. (IF 11.9) Pub Date : 2025-02-07 Meng Zhao, Jine Zhang, Furong Han, Yuansha Chen, Fengxia Hu, Baogen Shen, Weisheng Zhao, Jirong Sun, Yue Zhang
Bilinear magnetoresistance (BMR), exhibiting a linear response to magnetic field or applied current, has garnered significant attention in recent research. While most previous works have focused on isotropic BMR, arising from isotropic band structure or the spin Hall effect, we report on a strongly anisotropic BMR (ABMR) observed at the KTaO3 Rashba interface, characterized by a unique low-symmetry