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Bilayer tungsten diselenide transistors with on-state currents exceeding 1.5 milliamperes per micrometre Nat. Electron. (IF 33.255) Pub Date : 2022-08-08 Ruixia Wu, Quanyang Tao, Jia Li, Wei Li, Yang Chen, Zheyi Lu, Zhiwen Shu, Bei Zhao, Huifang Ma, Zhengwei Zhang, Xiangdong Yang, Bo Li, Huigao Duan, Lei Liao, Yuan Liu, Xidong Duan, Xiangfeng Duan
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A chemically mediated artificial neuron Nat. Electron. (IF 33.255) Pub Date : 2022-08-08 Ting Wang, Ming Wang, Jianwu Wang, Le Yang, Xueyang Ren, Gang Song, Shisheng Chen, Yuehui Yuan, Ruiqing Liu, Liang Pan, Zheng Li, Wan Ru Leow, Yifei Luo, Shaobo Ji, Zequn Cui, Ke He, Feilong Zhang, Fengting Lv, Yuanyuan Tian, Kaiyu Cai, Bowen Yang, Jingyi Niu, Haochen Zou, Songrui Liu, Guoliang Xu, Xing Fan, Benhui Hu, Xian Jun Loh, Lianhui Wang, Xiaodong Chen
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A laser-based chemical process enables reversible doping of graphene Nat. Electron. (IF 33.255) Pub Date : 2022-08-02
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A laser-assisted chlorination process for reversible writing of doping patterns in graphene Nat. Electron. (IF 33.255) Pub Date : 2022-08-01 Yoonsoo Rho, Kyunghoon Lee, Letian Wang, Changhyun Ko, Yabin Chen, Penghong Ci, Jiayun Pei, Alex Zettl, Junqiao Wu, Costas P. Grigoropoulos
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Transistor reporting under test Nat. Electron. (IF 33.255) Pub Date : 2022-07-29
The assessment of emerging transistor technologies is a challenging task. What can be done to help improve the reporting and benchmarking of devices?
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How to report and benchmark emerging field-effect transistors Nat. Electron. (IF 33.255) Pub Date : 2022-07-29 Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang, Son T. Le, Yanqing Wu, Davood Shahrjerdi, Iuliana Radu, Max C. Lemme, Lian-Mao Peng, Xiangfeng Duan, Zhihong Chen, Joerg Appenzeller, Steven J. Koester, Eric Pop, Aaron D. Franklin, Curt A. Richter
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Resistive memories stack up Nat. Electron. (IF 33.255) Pub Date : 2022-07-26 Injune Yeo, Jae-sun Seo
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A computing-in-memory macro based on three-dimensional resistive random-access memory Nat. Electron. (IF 33.255) Pub Date : 2022-07-26 Qiang Huo, Yiming Yang, Yiming Wang, Dengyun Lei, Xiangqu Fu, Qirui Ren, Xiaoxin Xu, Qing Luo, Guozhong Xing, Chengying Chen, Xin Si, Hao Wu, Yiyang Yuan, Qiang Li, Xiaoran Li, Xinghua Wang, Meng-Fan Chang, Feng Zhang, Ming Liu
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Nanoscale physical unclonable function labels based on block co-polymer self-assembly Nat. Electron. (IF 33.255) Pub Date : 2022-07-26 Jang Hwan Kim, Suwan Jeon, Jae Hyun In, Seonho Nam, Hyeong Min Jin, Kyu Hyo Han, Geon Gug Yang, Hee Jae Choi, Kyung Min Kim, Jonghwa Shin, Seung-Woo Son, Seok Joon Kwon, Bong Hoon Kim, Sang Ouk Kim
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Sub-millimetre light detection and ranging using perovskites Nat. Electron. (IF 33.255) Pub Date : 2022-07-25 Amin Morteza Najarian, Maral Vafaie, Andrew Johnston, Tong Zhu, Mingyang Wei, Makhsud I. Saidaminov, Yi Hou, Sjoerd Hoogland, F. Pelayo García de Arquer, Edward H. Sargent
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Microelectromechanical systems that can dissolve in the body or the environment Nat. Electron. (IF 33.255) Pub Date : 2022-07-21
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Ecoresorbable and bioresorbable microelectromechanical systems Nat. Electron. (IF 33.255) Pub Date : 2022-07-21 Quansan Yang, Tzu-Li Liu, Yeguang Xue, Heling Wang, Yameng Xu, Bashar Emon, Mingzheng Wu, Corey Rountree, Tong Wei, Irawati Kandela, Chad R. Haney, Anlil Brikha, Iwona Stepien, Jessica Hornick, Rebecca A. Sponenburg, Christina Cheng, Lauren Ladehoff, Yitong Chen, Ziying Hu, Changsheng Wu, Mengdi Han, John M. Torkelson, Yevgenia Kozorovitskiy, M. Taher A. Saif, Yonggang Huang, Jan-Kai Chang, John A
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Security keys from paired up nanotube devices Nat. Electron. (IF 33.255) Pub Date : 2022-07-15 Satish Kumar
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An amphibious artificial vision system with a panoramic visual field Nat. Electron. (IF 33.255) Pub Date : 2022-07-11 Mincheol Lee, Gil Ju Lee, Hyuk Jae Jang, Eehyung Joh, Hyojin Cho, Min Seok Kim, Hyun Myung Kim, Kyeong Muk Kang, Joong Hoon Lee, Myungbin Kim, Hongwoo Jang, Ji-Eun Yeo, Frédo Durand, Nanshu Lu, Dae-Hyeong Kim, Young Min Song
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Twin physically unclonable functions based on aligned carbon nanotube arrays Nat. Electron. (IF 33.255) Pub Date : 2022-07-04 Donglai Zhong, Jingxia Liu, Mengmeng Xiao, Yunong Xie, Huiwen Shi, Lijun Liu, Chenyi Zhao, Li Ding, Lian-Mao Peng, Zhiyong Zhang
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Techniques to help devices keep their cool Nat. Electron. (IF 33.255) Pub Date : 2022-06-28
Thermal management technology is essential in the development of electronic systems, and techniques that can deliver efficient cooling continue to evolve.
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Micro-thermoelectric devices Nat. Electron. (IF 33.255) Pub Date : 2022-06-27 Qihao Zhang, Kangfa Deng, Lennart Wilkens, Heiko Reith, Kornelius Nielsch
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Lego-like reconfigurable AI chips Nat. Electron. (IF 33.255) Pub Date : 2022-06-16 Shi-Jun Liang, Feng Miao
A reconfigurable integration technology based on stackable chips with embedded arrays of optoelectronic devices and memristive crossbars could be of use in edge intelligence applications.
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A near-infrared colloidal quantum dot imager with monolithically integrated readout circuitry Nat. Electron. (IF 33.255) Pub Date : 2022-06-16 Jing Liu, Peilin Liu, Dengyang Chen, Tailong Shi, Xixi Qu, Long Chen, Tong Wu, Jiangping Ke, Kao Xiong, Mingyu Li, Haisheng Song, Wei Wei, Junkai Cao, Jianbing Zhang, Liang Gao, Jiang Tang
Imagers that operate in the near-infrared region (wavelengths of 0.7–1.4 µm) are of use in applications such as material sorting, machine vision and autonomous driving. However, such imagers typically use the flip-chip method to connect infrared photodiodes with silicon-based readout integrated circuits, as the need for high-temperature processing and single-crystalline substrates prevents direct integration
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Electrical control of quantum acoustics Nat. Electron. (IF 33.255) Pub Date : 2022-06-14 Anton Frisk Kockum
The phase, frequency and amplitude of gigahertz acoustic waves can be electrically controlled in a lithium niobate waveguide at millikelvin temperatures.
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Reconfigurable heterogeneous integration using stackable chips with embedded artificial intelligence Nat. Electron. (IF 33.255) Pub Date : 2022-06-13 Chanyeol Choi, Hyunseok Kim, Ji-Hoon Kang, Min-Kyu Song, Hanwool Yeon, Celesta S. Chang, Jun Min Suh, Jiho Shin, Kuangye Lu, Bo-In Park, Yeongin Kim, Han Eol Lee, Doyoon Lee, Jaeyong Lee, Ikbeom Jang, Subeen Pang, Kanghyun Ryu, Sang-Hoon Bae, Yifan Nie, Hyun S. Kum, Min-Chul Park, Suyoun Lee, Hyung-Jun Kim, Huaqiang Wu, Peng Lin, Jeehwan Kim
Artificial intelligence applications have changed the landscape of computer design, driving a search for hardware architecture that can efficiently process large amounts of data. Three-dimensional heterogeneous integration with advanced packaging technologies could be used to improve data bandwidth among sensors, memory and processors. However, such systems are limited by a lack of hardware reconfigurability
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Improving carrier mobility in two-dimensional semiconductors with rippled materials Nat. Electron. (IF 33.255) Pub Date : 2022-06-09 Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang, Jing Wu
Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice
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Enhancing the electrical stability of two-dimensional transistors Nat. Electron. (IF 33.255) Pub Date : 2022-06-06
Transistors based on two-dimensional semiconductors suffer from electrical instabilities because charges readily get trapped in the gate oxides. As charge trapping is sensitive to the energetic alignment of the channel Fermi level to the defect bands in the oxide, the number of electrically active traps can be reduced by tuning the channel Fermi level.
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Electrical control of surface acoustic waves Nat. Electron. (IF 33.255) Pub Date : 2022-06-06 Linbo Shao, Di Zhu, Marco Colangelo, Daehun Lee, Neil Sinclair, Yaowen Hu, Peter T. Rakich, Keji Lai, Karl K. Berggren, Marko Lončar
Acoustic waves at microwave frequencies are widely used in wireless communication and are potential information carriers in quantum applications. However, most acoustic devices are passive components, and the development of phononic integrated circuits is limited by the inability to control acoustic waves in a low-loss, scalable manner. Here we report the electrical control of gigahertz travelling
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Massively parallel probabilistic computing with sparse Ising machines Nat. Electron. (IF 33.255) Pub Date : 2022-06-02 Navid Anjum Aadit, Andrea Grimaldi, Mario Carpentieri, Luke Theogarajan, John M. Martinis, Giovanni Finocchio, Kerem Y. Camsari
Solving computationally hard problems using conventional computing architectures is often slow and energetically inefficient. Quantum computing may help with these challenges, but it is still in the early stages of development. A quantum-inspired alternative is to build domain-specific architectures with classical hardware. Here we report a sparse Ising machine that achieves massive parallelism where
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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning Nat. Electron. (IF 33.255) Pub Date : 2022-06-02 Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov, Zhenxing Wang, Martin Otto, Lado Filipovic, Michael Waltl, Daniel Neumaier, Max C. Lemme, Tibor Grasser
Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide)
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Towards zero-power 6G communication switches using atomic sheets Nat. Electron. (IF 33.255) Pub Date : 2022-05-30
A solid-state electronic switch based on an atomic sheet of molybdenum disulfide is demonstrated in the 6G communication band with very high speed data transmission.
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Monolayer molybdenum disulfide switches for 6G communication systems Nat. Electron. (IF 33.255) Pub Date : 2022-05-30 Myungsoo Kim, Guillaume Ducournau, Simon Skrzypczak, Sung Jin Yang, Pascal Szriftgiser, Nicolas Wainstein, Keren Stern, Henri Happy, Eilam Yalon, Emiliano Pallecchi, Deji Akinwande
Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to frequencies relevant to the fifth generation of wireless communication technology. Here we show that
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Contacts in 2D Nat. Electron. (IF 33.255) Pub Date : 2022-05-27
Methods to create van der Waals contacts between two-dimensional semiconductors and three-dimensional metals are helping to unleash the potential of two-dimensional devices.
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Integrating 2D materials and metal electrodes Nat. Electron. (IF 33.255) Pub Date : 2022-05-23 Soon-Yong Kwon
Graphene can be used as a donor substrate to create van der Waals contacts between two-dimensional semiconductors and a variety of three-dimensional metal electrodes, including strongly adhering metals.
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Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials Nat. Electron. (IF 33.255) Pub Date : 2022-05-23 Guanyu Liu, Ziao Tian, Zhenyu Yang, Zhongying Xue, Miao Zhang, Xudong Hu, Yang Wang, Yuekun Yang, Paul K. Chu, Yongfeng Mei, Lei Liao, Weida Hu, Zengfeng Di
Metal–semiconductor junctions are essential components in electronic and optoelectronic devices. With two-dimensional semiconductors, conventional metal deposition via ion bombardment results in chemical disorder and Fermi-level pinning. Transfer printing techniques—in which metal electrodes are predeposited and transferred to create van der Waals junctions—have thus been developed, but the predeposition
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A printed proximity-sensing surface based on organic pyroelectric sensors and organic thin-film transistor electronics Nat. Electron. (IF 33.255) Pub Date : 2022-05-23 Marco Fattori, Simone Cardarelli, Joost Fijn, Pieter Harpe, Micael Charbonneau, Denis Locatelli, Stephanie Lombard, Christelle Laugier, Laurent Tournon, Stephanie Jacob, Krunoslav Romanjek, Romain Coppard, Herbert Gold, Manfred Adler, Martin Zirkl, Jonas Groten, Andreas Tschepp, Bernhard Lamprecht, Markus Postl, Barbara Stadlober, Josephine Socratous, Eugenio Cantatore
Large-area, flexible proximity-sensing surfaces are useful in a range of applications including process control, work security and robotics. However, current systems typically require rigid and thick electronics, which limit how they can be used. Here we report a flexible large-area proximity-sensing surface fabricated using printed organic materials and incorporating analogue front-end electronics
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A wireless haptic interface for programmable patterns of touch across large areas of the skin Nat. Electron. (IF 33.255) Pub Date : 2022-05-23 Yei Hwan Jung, Jae-Young Yoo, Abraham Vázquez-Guardado, Jae-Hwan Kim, Jin-Tae Kim, Haiwen Luan, Minsu Park, Jaeman Lim, Hee-Sup Shin, Chun-Ju Su, Robert Schloen, Jacob Trueb, Raudel Avila, Jan-Kai Chang, Da Som Yang, Yoonseok Park, Hanjun Ryu, Hong-Joon Yoon, Geumbee Lee, Hyoyeong Jeong, Jong Uk Kim, Aadeel Akhtar, Jesse Cornman, Tae-il Kim, Yonggang Huang, John A. Rogers
Haptic interfaces can be used to add sensations of touch to virtual and augmented reality experiences. Soft, flexible devices that deliver spatiotemporal patterns of touch across the body, potentially with full-body coverage, are of particular interest for a range of applications in medicine, sports and gaming. Here we report a wireless haptic interface of this type, with the ability to display vibro-tactile
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Topological integrated circuits for 5G and 6G Nat. Electron. (IF 33.255) Pub Date : 2022-05-20 Abhishek Kumar, Manoj Gupta, Ranjan Singh
On-chip Floquet photonic topological insulators, which are based on switched-capacitor circulators, could be used to create hybrid electronic–photonic topological integrated circuits for emerging communication technologies.
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Tilted spin current generated by an antiferromagnet Nat. Electron. (IF 33.255) Pub Date : 2022-05-05
Measurements reveal that the antiferromagnet ruthenium dioxide (RuO2) can generate an electric-field-induced spin current with a component of spin polarization perpendicular to the sample plane. This verifies theoretical predictions and provides a strategy for the future development of highly energy-efficient magnetic storage devices.
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Tilted spin current generated by the collinear antiferromagnet ruthenium dioxide Nat. Electron. (IF 33.255) Pub Date : 2022-05-05 Arnab Bose, Nathaniel J. Schreiber, Rakshit Jain, Ding-Fu Shao, Hari P. Nair, Jiaxin Sun, Xiyue S. Zhang, David A. Muller, Evgeny Y. Tsymbal, Darrell G. Schlom, Daniel C. Ralph
Symmetry plays a central role in determining the polarization of spin currents induced by electric fields. It also influences how these spin currents generate spin-transfer torques in magnetic devices. Here we show that an out-of-plane damping-like torque can be generated in ruthenium dioxide (RuO2)/permalloy devices when the Néel vector of the collinear antiferromagnet RuO2 is canted relative to the
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Quantum computing without quantum computers Nat. Electron. (IF 33.255) Pub Date : 2022-05-04
A silicon chip fabricated in a standard semiconductor foundry demonstrates that coupled ring oscillators can solve optimization problems targeted by quantum computers, and are quicker, cheaper and more energy-efficient than digital solvers. The 1,968 oscillator integrated circuit consumes 0.042 W and finds a solution within 50 oscillation cycles.
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Chip-scale Floquet topological insulators for 5G wireless systems Nat. Electron. (IF 33.255) Pub Date : 2022-05-02 Aravind Nagulu, Xiang Ni, Ahmed Kord, Mykhailo Tymchenko, Sasank Garikapati, Andrea Alù, Harish Krishnaswamy
Floquet topological insulators, which have an exotic topological order sustained by time-varying Hamiltonians, could be of use in a range of technologies, including wireless communications, radar and quantum information processing. However, demonstrations of photonic Floquet topological insulators have been limited to systems that emulate time with a spatial dimension, which preserves time-reversal
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High-efficiency cooling via the monolithic integration of copper on electronic devices Nat. Electron. (IF 33.255) Pub Date : 2022-05-02 Tarek Gebrael, Jiaqi Li, Arielle R. Gamboa, Jingcheng Ma, Joseph Schaadt, Logan Horowitz, Robert Pilawa-Podgurski, Nenad Miljkovic
Electrification is critical to decarbonizing society, but managing increasing power densification in electrical systems will require the development of new thermal management technologies. One approach is to use monolithic-metal-based heat spreaders that reduce thermal resistance and temperature fluctuation in electronic devices. However, their electrical conductivity makes them challenging to implement
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Graphene charge-injection photodetectors Nat. Electron. (IF 33.255) Pub Date : 2022-05-02 Wei Liu, Jianhang Lv, Li Peng, Hongwei Guo, Chen Liu, Yilun Liu, Wei Li, Lingfei Li, Lixiang Liu, Peiqi Wang, Srikrishna Chanakya Bodepudi, Khurram Shehzad, Guohua Hu, Kaihui Liu, Zhipei Sun, Tawfique Hasan, Yang Xu, Xiaomu Wang, Chao Gao, Bin Yu, Xiangfeng Duan
Charge-coupled devices are widely used imaging technologies. However, their speed is limited due to the complex readout process, which involves sequential charge transfer between wells, and their spectral bandwidth is limited due to the absorption limitations of silicon. Here we report graphene charge-injection photodetectors. The devices have a deep-depletion silicon well for charge integration, single-layer
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A 1,968-node coupled ring oscillator circuit for combinatorial optimization problem solving Nat. Electron. (IF 33.255) Pub Date : 2022-05-02 William Moy, Ibrahim Ahmed, Po-wei Chiu, John Moy, Sachin S. Sapatnekar, Chris H. Kim
Computational architectures that are optimized to solve non-deterministic polynomial-time hard or complete problems are of use in the development of machine learning, logistical planning and pathfinding. A range of quantum-, optical- and spintronic-based approaches have been explored for solving such combinatorial optimization problems, but they remain complicated to build and to scale. Here we report
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Perovskite potential Nat. Electron. (IF 33.255) Pub Date : 2022-04-28
Driven by their achievements in solar cells, metal halide perovskites are being used in a range of other devices — from light-emitting diodes to photodetectors to field-effect transistors — with increasing success.
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Engineering two-dimensional magnets at birth Nat. Electron. (IF 33.255) Pub Date : 2022-04-25 Yimin Xiong
Thin flakes of Cr5Te8, which exhibit a colossal anomalous Hall effect, can be synthesized using a phase-controlled chemical vapour deposition technique.
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Author Correction: Transistor qubits heat up Nat. Electron. (IF 33.255) Pub Date : 2022-04-27 Romain Maurand,Xavier Jehl
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Author Correction: Qubits made by advanced semiconductor manufacturing Nat. Electron. (IF 33.255) Pub Date : 2022-04-27 A. M. J. Zwerver,T. Krähenmann,T. F. Watson,L. Lampert,H. C. George,R. Pillarisetty,S. A. Bojarski,P. Amin,S. V. Amitonov,J. M. Boter,R. Caudillo,D. Correas-Serrano,J. P. Dehollain,G. Droulers,E. M. Henry,R. Kotlyar,M. Lodari,F. Lüthi,D. J. Michalak,B. K. Mueller,S. Neyens,J. Roberts,N. Samkharadze,G. Zheng,O. K. Zietz,G. Scappucci,M. Veldhorst,L. M. K. Vandersypen,J. S. Clarke
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Perovskite oxides as a 2D dielectric Nat. Electron. (IF 33.255) Pub Date : 2022-04-25 Wenhan Zhou, Shengli Zhang, Haibo Zeng
A van der Waals integration approach can be used to deposit single-crystal strontium titanate on two-dimensional molybdenum disulfide and tungsten diselenide, creating high-performance n- and p-doped field-effect transistors.
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Broadband convolutional processing using band-alignment-tunable heterostructures Nat. Electron. (IF 33.255) Pub Date : 2022-04-25 Lejing Pi, Pengfei Wang, Shi-Jun Liang, Peng Luo, Haoyun Wang, Dongyan Li, Zexin Li, Ping Chen, Xing Zhou, Feng Miao, Tianyou Zhai
Broadband convolutional processing is critical to high-precision image recognition and is of use in remote sensing and environmental monitoring. Implementing in-sensor broadband convolutional processing using conventional complementary metal–oxide–semiconductor technology is, however, challenging because broadband sensing and convolutional processing require the use of the same physical processes.
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Phase engineering of Cr5Te8 with colossal anomalous Hall effect Nat. Electron. (IF 33.255) Pub Date : 2022-04-25 Bijun Tang, Xiaowei Wang, Mengjiao Han, Xiaodong Xu, Zhaowei Zhang, Chao Zhu, Xun Cao, Yumeng Yang, Qundong Fu, Jianqun Yang, Xingji Li, Weibo Gao, Jiadong Zhou, Junhao Lin, Zheng Liu
Two-dimensional materials that are intrinsically ferromagnetic are crucial for the development of compact spintronic devices. However, most non-layered 2D magnets with a strong ferromagnetic order are difficult to synthesize. Here we show that the flakes of trigonal and monoclinic Cr5Te8 can be grown via a chemical vapour deposition method. Using magneto-optical and magnetotransport measurements, we
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Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors Nat. Electron. (IF 33.255) Pub Date : 2022-04-25 Allen Jian Yang, Kun Han, Ke Huang, Chen Ye, Wen Wen, Ruixue Zhu, Rui Zhu, Jun Xu, Ting Yu, Peng Gao, Qihua Xiong, X. Renshaw Wang
Two-dimensional semiconductors can be used to build next-generation electronic devices with ultrascaled channel lengths. However, semiconductors need to be integrated with high-quality dielectrics—which are challenging to deposit. Here we show that single-crystal strontium titanate—a high-κ perovskite oxide—can be integrated with two-dimensional semiconductors using van der Waals forces. Strontium
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Perovskite light-emitting diodes Nat. Electron. (IF 33.255) Pub Date : 2022-04-21 Azhar Fakharuddin, Mahesh K. Gangishetty, Mojtaba Abdi-Jalebi, Sang-Hyun Chin, Abd. Rashid bin Mohd Yusoff, Daniel N. Congreve, Wolfgang Tress, Felix Deschler, Maria Vasilopoulou, Henk J. Bolink
Light-emitting diodes based on halide perovskites have undergone rapid development in recent years and can now offer external quantum efficiencies of over 23%. However, the practical application of such devices is still limited by a number of factors, including the poor efficiency of blue-emitting devices, difficulty in accessing emission wavelengths above 800 nm, a decrease in external quantum efficiency
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Interaction- and defect-free van der Waals contacts between metals and two-dimensional semiconductors Nat. Electron. (IF 33.255) Pub Date : 2022-04-21 Gihyeon Kwon, Yoon-Ho Choi, Hyangsook Lee, Hyeon-Sik Kim, Jeahun Jeong, Kwangsik Jeong, Min Baik, Hoedon Kwon, Jaemin Ahn, Eunha Lee, Mann-Ho Cho
High Schottky barrier heights at metal–semiconductor junctions due to Fermi-level pinning can degrade the performance of electronic devices and increase their energy consumption. Van der Waals contacts between metals and two-dimensional semiconductors without Fermi-level pinning are theoretically possible, but have not been achieved due to the presence of interactions such as interface defects and
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Efficient spin–orbit torque in magnetic trilayers using all three polarizations of a spin current Nat. Electron. (IF 33.255) Pub Date : 2022-04-07 Jeongchun Ryu, Ryan Thompson, Jae Yeol Park, Seok-Jong Kim, Gaeun Choi, Jaimin Kang, Han Beom Jeong, Makoto Kohda, Jong Min Yuk, Junsaku Nitta, Kyung-Jin Lee, Byong-Guk Park
Spin–orbit coupling can convert a charge current into a spin current, thereby generating a spin–orbit torque (SOT). Energy-efficient, commercially viable SOT technology requires field-free switching of perpendicular magnetization at low current. In heterostructures incorporating ferromagnets, the polarization of spin current consists, in general, of three vectors: \(( {{{{\hat{\mathrm z}}}} \times
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Scalable manufacturing processes for quantum computing Nat. Electron. (IF 33.255) Pub Date : 2022-04-06
Quantum computing has attracted attention owing to its potential to solve problems that are intractable with traditional computing technologies; however, a scalable scheme for producing millions of qubits remains elusive. A new effort demonstrates a milestone to achieving this by fabricating qubits in the same factory where state-of-the-art semiconductor chips are manufactured.
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Vanadium dioxide remembers the light Nat. Electron. (IF 33.255) Pub Date : 2022-04-01 Katharina Zeissler
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Room-temperature skyrmions in 2D ferromagnets Nat. Electron. (IF 33.255) Pub Date : 2022-04-01 Matthew Parker
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The case for silicon again Nat. Electron. (IF 33.255) Pub Date : 2022-03-29
Quantum computers based on silicon could exploit the manufacturing techniques used to create conventional computer chips — providing a potential route to scaled-up quantum processors.
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Qubits made by advanced semiconductor manufacturing Nat. Electron. (IF 33.255) Pub Date : 2022-03-29 A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Lüthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz, G. Scappucci, M. Veldhorst, L. M. K. Vandersypen, J. S.
Full-scale quantum computers require the integration of millions of qubits, and the potential of using industrial semiconductor manufacturing to meet this need has driven the development of quantum computing in silicon quantum dots. However, fabrication has so far relied on electron-beam lithography and, with a few exceptions, conventional lift-off processes that suffer from low yield and poor uniformity
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Smart textiles for personalized healthcare Nat. Electron. (IF 33.255) Pub Date : 2022-03-28 Alberto Libanori, Guorui Chen, Xun Zhao, Yihao Zhou, Jun Chen
Incorporating sensing and therapeutic capabilities into everyday textiles could be a powerful approach in the development of personalized healthcare. The creation of such smart textiles has been driven by the fabrication of various miniaturized platform technologies, and has led to the construction of compact, autonomous and interconnected functional textiles. Here we review the development of smart
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Gigahertz topological valley Hall effect in nanoelectromechanical phononic crystals Nat. Electron. (IF 33.255) Pub Date : 2022-03-28 Qicheng Zhang, Daehun Lee, Lu Zheng, Xuejian Ma, Shawn I. Meyer, Li He, Han Ye, Ze Gong, Bo Zhen, Keji Lai, A. T. Charlie Johnson
Topological phononic crystals can manipulate elastic waves that propagate in solids without being backscattered, and could be used to develop integrated acousto-electronic systems for classical and quantum information processing. However, acoustic topological metamaterials have been mainly limited to macroscale systems that operate at low (kilohertz to megahertz) frequencies. Here we report a topological
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A resonant metamaterial clock distribution network for superconducting logic Nat. Electron. (IF 33.255) Pub Date : 2022-03-24 Joshua A. Strong, Vladimir V. Talanov, Max E. Nielsen, Andrew C. Brownfield, Nancyjane Bailey, Quentin P. Herr, Anna Y. Herr
Clock distribution is central to digital technology and influences circuit performance, interconnect overhead and efficiency. However, ensuring reliable clock distribution across large digital systems with low skew and jitter—and in the presence of device variations and thermal noise—is a design challenge. Here we report a superconducting metamaterial resonant clock network that can provide energy-efficient