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Physical reservoir computing with emerging electronics Nat. Electron. (IF 34.3) Pub Date : 2024-03-12 Xiangpeng Liang, Jianshi Tang, Yanan Zhong, Bin Gao, He Qian, Huaqiang Wu
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Quantum nonlinear devices go green Nat. Electron. (IF 34.3) Pub Date : 2024-03-01 Vsevolod Belosevich, Qiong Ma
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Two-dimensional perovskite oxide as a photoactive high-κ gate dielectric Nat. Electron. (IF 34.3) Pub Date : 2024-03-01 Siyuan Li, Xinya Liu, Hui Yang, Hong Zhu, Xiaosheng Fang
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A stress test for bioelectronics Nat. Electron. (IF 34.3) Pub Date : 2024-02-28
Advances in wearable and ingestible electronics are rapidly expanding the health-monitoring capabilities of bioelectronic devices.
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Stress monitoring with wearable technology and AI Nat. Electron. (IF 34.3) Pub Date : 2024-02-23 H. Ceren Ates, Cihan Ates, Can Dincer
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Monolithically integrated high-density vertical organic electrochemical transistor arrays and complementary circuits Nat. Electron. (IF 34.3) Pub Date : 2024-02-21 Jaehyun Kim, Robert M. Pankow, Yongjoon Cho, Isaiah D. Duplessis, Fei Qin, Dilara Meli, Rachel Daso, Ding Zheng, Wei Huang, Jonathan Rivnay, Tobin J. Marks, Antonio Facchetti
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Imaging circuits in three dimensions Nat. Electron. (IF 34.3) Pub Date : 2024-02-20 Matthew Parker
The researchers — who are based at the University of Stuttgart and various companies in Germany — attached a diamond plate containing the NV centres to the area of the circuit to be studied, and then placed the entire setup in a wide-field fluorescence microscope, with a field of view of around 90 μm × 90 μm. The magnetic fields generated by currents affect the spins of the NV centres, which are measured
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A fabrication process to reduce stress Nat. Electron. (IF 34.3) Pub Date : 2024-02-20 Katharina Zeissler
The researchers — who are based at various institutions in Singapore and China — fabricated optoelectronic fibres with single-core and dual-core configurations, by combining their optimized silicon and germanium semiconductor fibres with metal wires, a conducting polymer and an insulating polymer using a convergence fibre drawing technique. The tensile strengths of the silicon-based and germanium-based
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High-performance, power-efficient three-dimensional system-in-package designs with universal chiplet interconnect express Nat. Electron. (IF 34.3) Pub Date : 2024-02-19 Debendra Das Sharma, Gerald Pasdast, Sathya Tiagaraj, Kemal Aygün
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Pixel-correlated computing for detecting and tracking targets in dim lighting Nat. Electron. (IF 34.3) Pub Date : 2024-02-14
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Ready-to-transfer two-dimensional materials using tunable adhesive force tapes Nat. Electron. (IF 34.3) Pub Date : 2024-02-09 Maki Nakatani, Satoru Fukamachi, Pablo Solís-Fernández, Satoshi Honda, Kenji Kawahara, Yuta Tsuji, Yosuke Sumiya, Mai Kuroki, Kou Li, Qiunan Liu, Yung-Chang Lin, Aika Uchida, Shun Oyama, Hyun Goo Ji, Kenichi Okada, Kazu Suenaga, Yukio Kawano, Kazunari Yoshizawa, Atsushi Yasui, Hiroki Ago
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Wafer-scale transfer of two-dimensional materials with UV tape Nat. Electron. (IF 34.3) Pub Date : 2024-02-09 Tiange Zhao, Zhen Wang, Weida Hu
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End-to-end design of ingestible electronics Nat. Electron. (IF 34.3) Pub Date : 2024-02-09 Angsagan Abdigazy, Mohammed Arfan, Gianluca Lazzi, Constantine Sideris, Alex Abramson, Yasser Khan
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In-sensor dynamic computing for intelligent machine vision Nat. Electron. (IF 34.3) Pub Date : 2024-02-08 Yuekun Yang, Chen Pan, Yixiang Li, Xingjian Yangdong, Pengfei Wang, Zhu-An Li, Shuang Wang, Wentao Yu, Guanyu Liu, Bin Cheng, Zengfeng Di, Shi-Jun Liang, Feng Miao
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A tunable room-temperature nonlinear Hall effect in elemental bismuth thin films Nat. Electron. (IF 34.3) Pub Date : 2024-02-02 Pavlo Makushko, Sergey Kovalev, Yevhen Zabila, Igor Ilyakov, Alexey Ponomaryov, Atiqa Arshad, Gulloo Lal Prajapati, Thales V. A. G. de Oliveira, Jan-Christoph Deinert, Paul Chekhonin, Igor Veremchuk, Tobias Kosub, Yurii Skourski, Fabian Ganss, Denys Makarov, Carmine Ortix
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Recycle and recover Nat. Electron. (IF 34.3) Pub Date : 2024-01-30
The development of more sustainable electronics is increasingly vital.
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Creating 3D hardware with stacked 2D devices Nat. Electron. (IF 34.3) Pub Date : 2024-01-22 Owain Vaughan
The researchers — who are based at various institutions in the United States and South Korea — combined memristors based on 2D tungsten diselenide (WSe2) and hexagonal boron nitride (hBN) with transistors based on 2D molybdenum disulfide (MoS2). The memristors are monolithically integrated on top of the transistors, separated by a thin insulating layer of aluminium oxide (Al2O3) and connected with
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Electroluminescent fibres for making fabrics shine Nat. Electron. (IF 34.3) Pub Date : 2024-01-22 Matthew Parker
The electroluminescent threads — which can emit blue, green or yellow light — consist of a coating of zinc sulfide phosphors and thermoplastic polyurethane on a conductive thread. They are stitched into the fabric together with transparent conductive threads, made of silver-nanowire-coated nylon fibre, to form pixels where they overlap. The researchers show that a variety of designs can be embroidered
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A physicochemical-sensing electronic skin for stress response monitoring Nat. Electron. (IF 34.3) Pub Date : 2024-01-19 Changhao Xu, Yu Song, Juliane R. Sempionatto, Samuel A. Solomon, You Yu, Hnin Y. Y. Nyein, Roland Yingjie Tay, Jiahong Li, Wenzheng Heng, Jihong Min, Alison Lao, Tzung K. Hsiai, Jennifer A. Sumner, Wei Gao
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Stretchable interfaces come in from the cold Nat. Electron. (IF 34.3) Pub Date : 2024-01-15 Tomás Pinheiro
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Biomimetic olfactory chips based on large-scale monolithically integrated nanotube sensor arrays Nat. Electron. (IF 34.3) Pub Date : 2024-01-10 Chen Wang, Zhesi Chen, Chak Lam Jonathan Chan, Zhu’an Wan, Wenhao Ye, Wenying Tang, Zichao Ma, Beitao Ren, Daquan Zhang, Zhilong Song, Yucheng Ding, Zhenghao Long, Swapnadeep Poddar, Weiqi Zhang, Zixi Wan, Feng Xue, Suman Ma, Qingfeng Zhou, Geyu Lu, Kai Liu, Zhiyong Fan
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Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computing Nat. Electron. (IF 34.3) Pub Date : 2024-01-08 Xiaofu Wei, Xiankun Zhang, Huihui Yu, Li Gao, Wenhui Tang, Mengyu Hong, Zhangyi Chen, Zhuo Kang, Zheng Zhang, Yue Zhang
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Three-dimensional acoustic resonators for massively scalable spectral processors Nat. Electron. (IF 34.3) Pub Date : 2024-01-02
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Electronics devices that can be crumpled and stored in capsules Nat. Electron. (IF 34.3) Pub Date : 2024-01-02 Yaokang Zhang, Xuechang Zhou
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A ferroelectric-gate fin microwave acoustic spectral processor Nat. Electron. (IF 34.3) Pub Date : 2024-01-02 Faysal Hakim, Nicholas G. Rudawski, Troy Tharpe, Roozbeh Tabrizian
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Collaboration, IEDM and 60 years of CMOS Nat. Electron. (IF 34.3) Pub Date : 2023-12-21
Technology breakthroughs at the 2023 IEEE International Electron Devices Meeting, where collaboration and CMOS technology continue to play their part.
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Neuromorphic computing based on halide perovskites Nat. Electron. (IF 34.3) Pub Date : 2023-12-21 Maria Vasilopoulou, Abd Rashid bin Mohd Yusoff, Yang Chai, Michael-Alexandros Kourtis, Toshinori Matsushima, Nicola Gasparini, Rose Du, Feng Gao, Mohammad Khaja Nazeeruddin, Thomas D. Anthopoulos, Yong-Young Noh
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A skin-like multimodal haptic interface Nat. Electron. (IF 34.3) Pub Date : 2023-12-20 Zhongda Sun, Zixuan Zhang, Chengkuo Lee
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Thin-film transistors for large-area electronics Nat. Electron. (IF 34.3) Pub Date : 2023-12-19 Di Geng, Kai Wang, Ling Li, Kris Myny, Arokia Nathan, Jin Jang, Yue Kuo, Ming Liu
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Building a brain–computer interface to restore communication for people with paralysis Nat. Electron. (IF 34.3) Pub Date : 2023-12-19 Stuart Thomas
Riki Banerjee, vice president of research and development at Synchron, tells Nature Electronics about the company’s work on brain–computer interfaces and the future of communications.
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Unexpected large spin currents in the normal state of an oxide superconductor Nat. Electron. (IF 34.3) Pub Date : 2023-12-15
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A metallized silicon nitride membrane for clean 2D heterostructure assembly Nat. Electron. (IF 34.3) Pub Date : 2023-12-14
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Stretchable graphene–hydrogel interfaces for wearable and implantable bioelectronics Nat. Electron. (IF 34.3) Pub Date : 2023-12-14 Yuyao Lu, Geng Yang, Shenqiang Wang, Yuqi Zhang, Yihui Jian, Long He, Ting Yu, Huayu Luo, Depeng Kong, Yunlei Xianyu, Bo Liang, Tao Liu, Xiaoping Ouyang, Jicheng Yu, Xinyang Hu, Huayong Yang, Zhen Gu, Wei Huang, Kaichen Xu
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Reservoir computing with brain organoids Nat. Electron. (IF 34.3) Pub Date : 2023-12-11 Lena Smirnova, Brian Caffo, Erik C. Johnson
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Brain organoid reservoir computing for artificial intelligence Nat. Electron. (IF 34.3) Pub Date : 2023-12-11 Hongwei Cai, Zheng Ao, Chunhui Tian, Zhuhao Wu, Hongcheng Liu, Jason Tchieu, Mingxia Gu, Ken Mackie, Feng Guo
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Nanosheet-based complementary transistors with a 48 nm pitch Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Yeliang Wang
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A CMOS inverter from stacked ribbons Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Matthew Parker
The inverter consists of three n-type ribbons on top of three p-type ribbons, with 30 nm of vertical separation. The backside process — used to interconnect the devices — was adapted for the stacked CFETs for direct backside device contacts. The researchers also demonstrated a process for implementing circuits where the number of n- and p-type devices did not match, called device depopulation, where
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Memristors that stack up Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Matthew Parker
The first and second layers contain volatile RRAM arrays with titanium nitride (TiN) and ruthenium write lines, respectively. This creates different timescales for use in multi-timescale reservoir computing (a type of neural network). The third layer contains non-volatile RRAM devices for multi-bit storage.
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Smarter imaging in 3D Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Owain Vaughan
The researchers built a sequentially stacked device that combines logic, memory and image sensor layers on a single 8-inch silicon wafer. The logic layer is based on a silicon complementary metal–oxide–semiconductor (CMOS) circuit made from fin field-effect transistors (FinFETs; see image, which shows a scanning electron microscopy image of the FinFET circuit). The memory layer is based on capacitorless
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Magnetic random-access memory with disturb-free read Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Katharina Zeissler
The researchers — who are based at the Taiwan Semiconductor Research Institute and the Taiwan Semiconductor Manufacturing Company (TSMC) centres in Taiwan and the United States — demonstrate fast selector operation with an off-to-on and on-to-off switching transition speed of 2.5 ns and 3 ns, respectively, as well as an a.c. threshold voltage of ±1.1 V. The one-selector–one-resistor memory array operates
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Imaging pixels squeeze in Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Stuart Thomas
The researchers — who are based at Samsung Electronics in Korea — put the photodiodes, transfer gates and floating diffusion node on the top wafer, the pixel transistor on the middle wafer, and the analogue and logic circuits on the bottom wafer. Deep contacts — which connect the top wafer to the backside of the middle wafer, and so must pass through it — can limit the size of the pixel transistor
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Getting two-dimensional materials ready for industrial manufacturing Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Wenjuan Zhu, Xia Hong
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Creating stochastic neural networks with the help of probabilistic bits Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Samuel Liu, Jean Anne C. Incorvia
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Monolithic 3D stacking for neural network acceleration Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Bokyung Kim, Hai Li
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A deeper understanding of the brain with photonic–electronic integration Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Aseema Mohanty
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Van der Waals device integration beyond the limits of van der Waals forces using adhesive matrix transfer Nat. Electron. (IF 34.3) Pub Date : 2023-12-08 Peter F. Satterthwaite, Weikun Zhu, Patricia Jastrzebska-Perfect, Melbourne Tang, Sarah O. Spector, Hongze Gao, Hikari Kitadai, Ang-Yu Lu, Qishuo Tan, Shin-Yi Tang, Yu-Lun Chueh, Chia-Nung Kuo, Chin Shan Lue, Jing Kong, Xi Ling, Farnaz Niroui
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Organic flexible electronics with closed-loop recycling for sustainable wearable technology Nat. Electron. (IF 34.3) Pub Date : 2023-12-06 Haechan Park, Sehyun Kim, Juyeong Lee, Inwoo Lee, Sujitkumar Bontapalle, Younghoon Na, Kyoseung Sim
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Crumple-recoverable electronics based on plastic to elastic deformation transitions Nat. Electron. (IF 34.3) Pub Date : 2023-12-06 Yeonwook Roh, Seunggon Lee, Sang Min Won, Suhyeon Hwang, Dohyeon Gong, Changhwan Kim, Insic Hong, Daseul Lim, Hyeongseok Kim, Minho Kim, Baekgyeom Kim, Taewi Kim, Sunghoon Im, Dongwook Shin, Uikyum Kim, Jungil Choi, Je-Sung Koh, Daeshik Kang, Seungyong Han
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Large spin–orbit torque in bismuthate-based heterostructures Nat. Electron. (IF 34.3) Pub Date : 2023-12-05 Anthony L. Edgeton, Isaac A. Harris, Neil G. Campbell, Yahong Chai, Marcel M. Mazur, Gautam Gurung, Xiaoxi Huang, Sandhya Susarla, Evgeny Y. Tsymbal, Daniel C. Ralph, Tianxiang Nan, Mark S. Rzchowski, Ramamoorthy Ramesh, Chang-Beom Eom
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Clean assembly of van der Waals heterostructures using silicon nitride membranes Nat. Electron. (IF 34.3) Pub Date : 2023-12-05 Wendong Wang, Nicholas Clark, Matthew Hamer, Amy Carl, Endre Tovari, Sam Sullivan-Allsop, Evan Tillotson, Yunze Gao, Hugo de Latour, Francisco Selles, James Howarth, Eli G. Castanon, Mingwei Zhou, Haoyu Bai, Xiao Li, Astrid Weston, Kenji Watanabe, Takashi Taniguchi, Cecilia Mattevi, Thomas H. Bointon, Paul V. Wiper, Andrew J. Strudwick, Leonid A. Ponomarenko, Andrey V. Kretinin, Sarah J. Haigh, Alex
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Monolayer black phosphorus and germanium arsenide transistors via van der Waals channel thinning Nat. Electron. (IF 34.3) Pub Date : 2023-12-04 Wanying Li, Quanyang Tao, Zhiwei Li, Guanhua Yang, Zheyi Lu, Yang Chen, Yao Wen, Yiliu Wang, Lei Liao, Yuan Liu, Jun He
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A skin-integrated multimodal haptic interface for immersive tactile feedback Nat. Electron. (IF 34.3) Pub Date : 2023-11-30 Ya Huang, Jingkun Zhou, Pingchuan Ke, Xu Guo, Chun Ki Yiu, Kuanming Yao, Shaoyu Cai, Dengfeng Li, Yu Zhou, Jian Li, Tsz Hung Wong, Yiming Liu, Lei Li, Yuyu Gao, Xingcan Huang, Hu Li, Jiyu Li, Binbin Zhang, Zhenlin Chen, Huanxi Zheng, Xingyu Yang, Haichen Gao, Zichen Zhao, Enming Song, Hui Wu, Zuankai Wang, Zhaoqian Xie, Kening Zhu, Xinge Yu
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Ferroelectric transistors based on shear-transformation-mediated rhombohedral-stacked molybdenum disulfide Nat. Electron. (IF 34.3) Pub Date : 2023-11-30 Tilo H. Yang, Bor-Wei Liang, Hsiang-Chi Hu, Fu-Xiang Chen, Sheng-Zhu Ho, Wen-Hao Chang, Liu Yang, Han-Chieh Lo, Tzu-Hao Kuo, Jyun-Hong Chen, Po-Yen Lin, Kristan Bryan Simbulan, Zhao-Feng Luo, Alice Chinghsuan Chang, Yi-Hao Kuo, Yu-Seng Ku, Yi-Cheng Chen, You-Jia Huang, Yu-Chen Chang, Yu-Fan Chiang, Ting-Hua Lu, Min-Hung Lee, Kai-Shin Li, Menghao Wu, Yi-Chun Chen, Chun-Liang Lin, Yann-Wen Lan
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Strain engineering of vertical molybdenum ditelluride phase-change memristors Nat. Electron. (IF 34.3) Pub Date : 2023-11-23 Wenhui Hou, Ahmad Azizimanesh, Aditya Dey, Yufeng Yang, Wuxiucheng Wang, Chen Shao, Hui Wu, Hesam Askari, Sobhit Singh, Stephen M. Wu
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Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes Nat. Electron. (IF 34.3) Pub Date : 2023-11-22 Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang, Jing Wu
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Some steps towards a safe and sustainable AI Nat. Electron. (IF 34.3) Pub Date : 2023-11-22
The continuing advance of artificial intelligence requires initiatives to address the potential harms of the technology and efforts to develop new energy-efficient electronic hardware.
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Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes Nat. Electron. (IF 34.3) Pub Date : 2023-11-22 Peng Wu
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An inference chip in one Nat. Electron. (IF 34.3) Pub Date : 2023-11-20 Stuart Thomas
The researchers used a 12-nm silicon process to fabricate their chip, which contains 22 billion transistors, 256 cores and 224 MB of on-chip memory in an area of 800 mm2. Each core contains memory and processing elements, and can execute up to 8,192 operations per cycle at a precision of 2 bits. Software was co-designed for the chip to ensure that the full capabilities of the architecture were utilized
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A reconfigurable single-gate transistor Nat. Electron. (IF 34.3) Pub Date : 2023-11-20 Guanglong Ding, Su-Ting Han, Ye Zhou
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Reconfigurable heterojunction transistors for off-grid medical devices Nat. Electron. (IF 34.3) Pub Date : 2023-11-17 Minseong Park, Yongmin Baek, Kyusang Lee