The researchers — who are based at various institutions in the United States and South Korea — combined memristors based on 2D tungsten diselenide (WSe₂) and hexagonal boron nitride (hBN) with transistors based on 2D molybdenum disulfide (MoS₂). The memristors are monolithically integrated on top of the transistors, separated by a thin insulating layer of aluminium oxide (Al₂O₃) and connected with the help of patterned via-holes and metallic interconnects. Three of these two-tier integrated processors can then also be stacked, creating a 3D system with six layers of 2D devices in total.

中文翻译：

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使用堆叠的 2D 设备创建 3D 硬件

来自美国和韩国多个机构的研究人员将基于二维二硒化钨 (WSe2) 和六方氮化硼 (hBN) 的忆阻器_与基于二维二硫化钼 (MoS2 ₎的晶体管结合起来。忆阻器单片集成在晶体管顶部，由薄薄的氧化铝 (Al ₂ O ₃ ) 绝缘层隔开，并借助图案化通孔和金属互连进行连接。然后还可以堆叠三个这样的两层集成处理器，创建总共具有六层 2D 设备的 3D 系统。