In this letter, a 10–43-GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is designed in a commercial 0.15- $\mu \text{m}$ GaAs E-mode pseudomorphic high electron mobility transistor (pHEMT) technology. In the proposed LNA circuit, a novel coupled-line (CL)-based positive feedback structure is employed with the bandpass characteristic. By carefully tuning its coupling factor and arm length, the center frequency $f_{c}$ and the intensity of the feedback can be controlled, respectively. Subsequently, targeting $f_{c}$ at the higher cutting edge of the working band leads to compensated gain roll-off and extended bandwidth. Incorporating three-stage common-source (CS) architectures, an LNA prototype is fabricated with a size of 1.05 mm2 including pads. Under 2-V voltage drain drain (VDD), good performance is obtained, including 24.6-dB peak gain with 3-dB bandwidth of 33 GHz, 2.4–3.0-dB noise figure (NF), 54.5 ± 13.8-ps group delay, and 12.3/21.5-dBm best output power at 1 dB gain compression (OP1dB)/output third order intercept point (OIP3). The total dc power is 110 mW.

中文翻译：

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在 0.15-μm GaAs pHEMT 技术中使用耦合线反馈的宽带 10-43-GHz 高增益 LNA MMIC

在这封信中，一个 10-43-GHz 低噪声放大器 (LNA) 单片微波集成电路 (MMIC) 被设计在商用 0.15- $\mu\文本{m}$GaAs E 型假晶高电子迁移率晶体管 (pHEMT) 技术。在所提出的 LNA 电路中，采用了具有带通特性的新型耦合线 (CL) 正反馈结构。通过仔细调整其耦合系数和臂长，中心频率 $f_{c}$并且可以分别控制反馈的强度。随后，针对 $f_{c}$在工作频带的较高切割边缘导致补偿增益滚降和扩展带宽。结合三级共源 (CS) 架构，LNA 原型的制造尺寸为 1.05 mm2，包括焊盘。在 2 V 电压漏极 (VDD) 下，获得了良好的性能，包括 24.6 dB 峰值增益和 33 GHz 的 3 dB 带宽、2.4–3.0 dB 噪声系数 (NF)、54.5 ± 13.8 ps 群延迟、 1 dB 增益压缩 (OP1dB)/输出三阶截取点 (OIP3) 时的最佳输出功率为 12.3/21.5-dBm。总直流功率为 110 mW。