The researchers — who are based at the National Institute for Materials Science, Mie University, Keio University, Osaka University and TDK Corporation — studied 252 combinations of different magnesium (Mg2+) and gallium (Ga3+) cation occupations in the spinel material. The simulations were performed using a machine-learning factorization machine developed by the team in combination with D-Wave’s Advantage

The electronics are first fabricated on a planar substrate and then picked up by the petal-like stamp, which consists of a silicone rubber and water-soluble double-sided adhesive tape. Key to the transfer process is controlling the wrapping process so the stamp applies a uniform pressure at all points on the target curvy surface. This is achieved by placing the target and stamp in a pre-strained wrapping

The researchers — who are based at Linköping University, the International School for Advanced Studies, Columbia University, the University of Milan and the Swedish University of Agricultural Sciences — developed a 20 mm × 25 mm grid containing 120 polymer-based electrodes. They found that the action potentials in the lobes of the Venus flytrap when a trigger hair is stimulated propagate at constant

The researchers — who are based at Yonsei University, Hongik University, Kongju National University and the Institute for Basic Science in Korea — developed a hot-wall metal–organic chemical vapour deposition method to grow MoS2 on flexible substrates attached to a rigid carrier substrate, which can later be removed. The growth process also leads to larger domain sizes across the MoS2 films compared

Each cellular unit has a hydraulically amplified self-healing electrostatic actuator, a sensor combining a soft magnetic block and magnetometer, and a driving circuit with a high-voltage sensor to regulate the actuator voltage. The cells, which are 60 mm × 60 mm in size, can exhibit reversible shape morphing at a rate of up to 50 Hz. The magnetic-based sensors embedded in the surface layer are interference-free

Metal halide perovskites are of increasing use in applications beyond conventional photovoltaics, from flexible solar cells for wearable devices to field-effect transistors for unconventional computing.

The researchers used extreme-ultraviolet patterning to define a silicon germanium/silicon epitaxial layer stack that forms the basis of the top and bottom transistor channel layers. A silicon nitride cover spacer was used to shield the top device during formation of the source and drain for the bottom device, and a silicon dioxide isolation layer was used to shield the bottom device during source and

The researchers — who are based at Stanford University, Western Digital, the University of Nebraska-Lincoln, the University of Missouri and SLAC National Accelerator Laboratory — show that the capacitors have an operation voltage of 1.3 V (which is lower than the industrial requirement of 1.5 V), a polarization switching of 108 μC cm–2 and a device endurance of up to 1010 cycles. Device fatigue under

The researchers built upon first-generation gate-all-around technology, which is currently in mass production, to develop this second-generation technology. The gain in performance is attributed to the improved uniformity of the epitaxially grown source and drain contacts on very thin nanosheets, and to optimized metal gate deposition that reduces parasitic leakage, prevents damage to the dielectric

Although the approach uses an electrode array, the silicon substrate can be thinned to 15 μm and is then encapsulated by polyimide and parylene (with a total thickness of 25 μm). This is sufficiently thin to be positioned in the subdural space of the skull and flexible enough to conform to the brain surface. The 6.8 mm × 7.4 mm chip contains an array with 65,536 channels, as well as electronics to

The HEMTs are based on indium gallium arsenide (InGaAs) and use superconducting niobium-based contacts. At 4 K, the niobium-based contacts have a resistance of 37 Ω μm, about 20% lower than molybdenum-based contacts. A 70-nm-gate-length InGaAs HEMT exhibited (at 4 K) a unity gain cut-off frequency of 601 GHz and unity power gain cut-off frequency of 593 GHz. The researchers — who are based at the Korea

New energy-efficient electronic hardware will be required to sustain the development of machine learning and artificial intelligence.

The researchers — who are based at Tsinghua University — use a multimodal sensing approach that includes a dynamic vision sensor, a frame-based camera and an inertial measurement unit. The incoming data are encoded and processed using a multimodal hybrid neural network and multiscale liquid-state-machine models to create a sparse representation space, which also allows the robot to function in situations

The capabilities of touchless user interfaces that recognize hand gestures are improving, but their place in the future of everyday electronics remains uncertain.

The interface consists of two cortical implants containing 64 electrodes and peripheral electronics that measure electrocorticographic signals from the sensorimotor cortex. Antennas are used to power the implanted devices via wireless induction and to transfer the signals. The signal is converted into intended movements and a commercial implantable pulse generator — previously used to treat Parkinson’s

The researchers use an external magnetic field, generated by pulsed currents in electromagnetic coils, to cause rotational oscillation of a spherical neodymium iron boron magnet suspended by a filament above a second, fixed magnet. After the excitation, the rotation decays and is detected via the voltage induced in 16 receiver coils. The signal amplitude and distribution over these coils can be used

No matter the platform, errors are an inevitable part of quantum computing and thus steps need to be taken to reduce them during operation. The work featured on our April 2019 cover (image, left), for example, provided an approach to reduce error rates in silicon qubits based on electron spins confined in quantum dot structures. The paper was from Henry Yang and colleagues, and was entitled ‘Silicon

The researchers — who are based at the Korea Advanced Institute of Science and Technology and Korea University — use an off-chip optical frequency comb source to generate low-jitter photocurrent pulses, which drive capacitive driverless metal-mesh structures in the integrated circuit and thus generate clock signal edges in the voltage domain. A test chip that contains three clock distribution structures