当前期刊: Nature Electronics Go to current issue    加入关注   
显示样式:        排序: IF: - GO 导出
我的关注
我的收藏
您暂时未登录!
登录
  • In situ learning using intrinsic memristor variability via Markov chain Monte Carlo sampling
    Nat. Electron. (IF 27.5) Pub Date : 2021-01-18
    Thomas Dalgaty; Niccolo Castellani; Clément Turck; Kamel-Eddine Harabi; Damien Querlioz; Elisa Vianello

    Resistive memory technologies could be used to create intelligent systems that learn locally at the edge. However, current approaches typically use learning algorithms that cannot be reconciled with the intrinsic non-idealities of resistive memory, particularly cycle-to-cycle variability. Here, we report a machine learning scheme that exploits memristor variability to implement Markov chain Monte Carlo

    更新日期:2021-01-18
  • A biosensor that learns on the go
    Nat. Electron. (IF 27.5) Pub Date : 2021-01-11
    Simon Tam; Benoit Gosselin

    A flexible biosensing system with in-sensor machine-learning functionality can recognize up to 21 hand gestures in real time based on surface electromyography patterns from a forearm.

    更新日期:2021-01-12
  • Illusion of large on-chip memory by networked computing chips for neural network inference
    Nat. Electron. (IF 27.5) Pub Date : 2021-01-11
    Robert M. Radway; Andrew Bartolo; Paul C. Jolly; Zainab F. Khan; Binh Q. Le; Pulkit Tandon; Tony F. Wu; Yunfeng Xin; Elisa Vianello; Pascal Vivet; Etienne Nowak; H.-S. Philip Wong; Mohamed M. Sabry Aly; Edith Beigne; Mary Wootters; Subhasish Mitra

    Hardware for deep neural network (DNN) inference often suffers from insufficient on-chip memory, thus requiring accesses to separate memory-only chips. Such off-chip memory accesses incur considerable costs in terms of energy and execution time. Fitting entire DNNs in on-chip memory is challenging due, in particular, to the physical size of the technology. Here, we report a DNN inference system—termed

    更新日期:2021-01-12
  • Stretchable transistors and functional circuits for human-integrated electronics
    Nat. Electron. (IF 27.5) Pub Date : 2021-01-11
    Yahao Dai; Huawei Hu; Maritha Wang; Jie Xu; Sihong Wang

    Electronics with skin- or tissue-like mechanical properties, including low stiffness and high stretchability, can be used to create intelligent technologies for application in areas such as health monitoring and human–machine interactions. Stretchable transistors that provide signal-processing and computational functions will be central to the development of this technology. Here, we review the development

    更新日期:2021-01-12
  • A wearable biosensing system with in-sensor adaptive machine learning for hand gesture recognition
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-21
    Ali Moin; Andy Zhou; Abbas Rahimi; Alisha Menon; Simone Benatti; George Alexandrov; Senam Tamakloe; Jonathan Ting; Natasha Yamamoto; Yasser Khan; Fred Burghardt; Luca Benini; Ana C. Arias; Jan M. Rabaey

    Wearable devices that monitor muscle activity based on surface electromyography could be of use in the development of hand gesture recognition applications. Such devices typically use machine-learning models, either locally or externally, for gesture classification. However, most devices with local processing cannot offer training and updating of the machine-learning model during use, resulting in

    更新日期:2020-12-21
  • Conference changes
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-14

    Technology breakthroughs at the 2020 IEEE International Electron Devices Meeting, which this year takes place online.

    更新日期:2020-12-14
  • Reconfigurable photo-induced doping of two-dimensional van der Waals semiconductors using different photon energies
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-14
    Seung-Young Seo; Gunho Moon; Odongo F. N. Okello; Min Yeong Park; Cheolhee Han; Soonyoung Cha; Hyunyong Choi; Han Woong Yeom; Si-Young Choi; Jewook Park; Moon-Ho Jo

    Two-dimensional semiconductors have a range of electronic and optical properties that can be used in the development of advanced electronic devices. However, unlike conventional silicon semiconductors, simple doping methods to monolithically assemble n- and p-type channels on a single two-dimensional semiconductor are lacking, which makes the fabrication of integrated circuitry challenging. Here we

    更新日期:2020-12-14
  • A high-speed programmable and scalable terahertz holographic metasurface based on tiled CMOS chips
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-14
    Suresh Venkatesh; Xuyang Lu; Hooman Saeidi; Kaushik Sengupta

    Metasurfaces, which consist of arrays of subwavelength scatterers, can be used to precisely control incident electromagnetic fields, but are typically static once fabricated. A dynamically programmable array of terahertz meta-elements, in which each element can be individually reconfigured to allow controlled wavefront shaping, could be of value in terahertz applications such as wireless communication

    更新日期:2020-12-14
  • A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-14
    Cheng-Xin Xue; Yen-Cheng Chiu; Ta-Wei Liu; Tsung-Yuan Huang; Je-Syu Liu; Ting-Wei Chang; Hui-Yao Kao; Jing-Hong Wang; Shih-Ying Wei; Chun-Ying Lee; Sheng-Po Huang; Je-Min Hung; Shih-Hsih Teng; Wei-Chen Wei; Yi-Ren Chen; Tzu-Hsiang Hsu; Yen-Kai Chen; Yun-Chen Lo; Tai-Hsing Wen; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; Kea-Tiong Tang; Mon-Shu Ho; Chin-Yi Su; Chung-Cheng Chou; Yu-Der Chih; Meng-Fan

    The development of small, energy-efficient artificial intelligence edge devices is limited in conventional computing architectures by the need to transfer data between the processor and memory. Non-volatile compute-in-memory (nvCIM) architectures have the potential to overcome such issues, but the development of high-bit-precision configurations required for dot-product operations remains challenging

    更新日期:2020-12-14
  • A single silicon colour centre resolved
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-07
    Stephanie Simmons

    Isolated point defects in silicon that emit light at telecom wavelengths could help accelerate the development of quantum information technologies using commercial platforms.

    更新日期:2020-12-07
  • Two-dimensional transistors with reconfigurable polarities for secure circuits
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-07
    Peng Wu; Dayane Reis; Xiaobo Sharon Hu; Joerg Appenzeller

    Security is a critical aspect in modern circuit design, but research into hardware security at the device level is rare as it requires modification of existing technology nodes. With the increasing challenges facing the semiconductor industry, interest in out-of-the-box security solutions has grown, even if this implies introducing novel materials such as two-dimensional layered semiconductors. Here

    更新日期:2020-12-07
  • Building a half-adder based on spin waves
    Nat. Electron. (IF 27.5) Pub Date : 2020-12-02
    Daniela Petti

    A magnonic directional coupler based on yttrium iron garnet could be used to create integrated magnonic nanocircuits for logic operations.

    更新日期:2020-12-03
  • Suppression of the field-like torque for efficient magnetization switching in a spin–orbit ferromagnet
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-30
    Miao Jiang; Hirokatsu Asahara; Shoichi Sato; Shinobu Ohya; Masaaki Tanaka

    Spin–orbit torque magnetization switching is an efficient method to control magnetization. In perpendicularly magnetized films, two types of spin–orbit torque are induced by driving a current: a damping-like torque and a field-like torque. The damping-like torque assists magnetization switching, but a large field-like torque pushes the magnetization towards the in-plane direction, resulting in a larger

    更新日期:2020-12-01
  • Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-30
    Z. Kašpar; M. Surýnek; J. Zubáč; F. Krizek; V. Novák; R. P. Campion; M. S. Wörnle; P. Gambardella; X. Marti; P. Němec; K. W. Edmonds; S. Reimers; O. J. Amin; F. Maccherozzi; S. S. Dhesi; P. Wadley; J. Wunderlich; K. Olejník; T. Jungwirth

    Antiferromagnets are of potential use in the development of spintronic devices due to their ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray fields. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, the readout magnetoresistivity signals in simple antiferromagnetic

    更新日期:2020-12-01
  • Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-30
    Shouzhong Peng; Daoqian Zhu; Weixiang Li; Hao Wu; Alexander J. Grutter; Dustin A. Gilbert; Jiaqi Lu; Danrong Xiong; Wenlong Cai; Padraic Shafer; Kang L. Wang; Weisheng Zhao

    The electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin–orbit torques generated in an adjacent heavy-metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling

    更新日期:2020-12-01
  • Single artificial atoms in silicon emitting at telecom wavelengths
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-23
    W. Redjem; A. Durand; T. Herzig; A. Benali; S. Pezzagna; J. Meijer; A. Yu. Kuznetsov; H. S. Nguyen; S. Cueff; J.-M. Gérard; I. Robert-Philip; B. Gil; D. Caliste; P. Pochet; M. Abbarchi; V. Jacques; A. Dréau; G. Cassabois

    Given its potential for integration and scalability, silicon is likely to be a key platform for large-scale quantum technologies. Individual electron-encoded artificial atoms, formed by either impurities or quantum dots, have emerged as a promising solution for silicon-based integrated quantum circuits. However, single qubits featuring an optical interface, which is needed for long-distance exchange

    更新日期:2020-11-25
  • Implementation of XY entangling gates with a single calibrated pulse
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-23
    Deanna M. Abrams; Nicolas Didier; Blake R. Johnson; Marcus P. da Silva; Colm A. Ryan

    Near-term applications of quantum information processors will rely on optimized circuit implementations to minimize the circuit depth, reducing the negative impact of gate errors in noisy intermediate-scale quantum (NISQ) computers. One approach to minimize the circuit depth is the use of a more expressive gate set. The XY two-qubit gate set can offer reductions in circuit depth for generic circuits

    更新日期:2020-11-25
  • Shining a light on perovskite devices
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-17

    Could halide perovskites be of use in electronic devices beyond solar cells and LEDs?

    更新日期:2020-11-17
  • Near-sensor and in-sensor computing
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-17
    Feichi Zhou; Yang Chai

    The number of nodes typically used in sensory networks is growing rapidly, leading to large amounts of redundant data being exchanged between sensory terminals and computing units. To efficiently process such large amounts of data, and decrease power consumption, it is necessary to develop approaches to computing that operate close to or inside sensory networks, and that can reduce the redundant data

    更新日期:2020-11-17
  • Picosecond switching in a ferromagnet
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-09
    Can Onur Avci

    An ultrashort pulse of electric current can be used to switch the magnetization of a micrometre-scale magnetic element via spin–orbit torques.

    更新日期:2020-11-09
  • An epicardial bioelectronic patch made from soft rubbery materials and capable of spatiotemporal mapping of electrophysiological activity
    Nat. Electron. (IF 27.5) Pub Date : 2020-11-03
    Kyoseung Sim; Faheem Ershad; Yongcao Zhang; Pinyi Yang; Hyunseok Shim; Zhoulyu Rao; Yuntao Lu; Anish Thukral; Abdelmotagaly Elgalad; Yutao Xi; Bozhi Tian; Doris A. Taylor; Cunjiang Yu

    An epicardial bioelectronic patch is an important device for investigating and treating heart diseases. The ideal device should possess cardiac-tissue-like mechanical softness and deformability, and be able to perform spatiotemporal mapping of cardiac conduction characteristics and other physical parameters. However, existing patches constructed from rigid materials with structurally engineered mechanical

    更新日期:2020-11-04
  • Publisher Correction: Metal halide perovskites: Perovskite transistors clean up their act
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-27
    Huihui Zhu; Ao Liu; Yong-Young Noh

    An amendment to this paper has been published and can be accessed via a link at the top of the paper.

    更新日期:2020-10-28
  • Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-26
    Kaushalya Jhuria; Julius Hohlfeld; Akshay Pattabi; Elodie Martin; Aldo Ygnacio Arriola Córdova; Xinping Shi; Roberto Lo Conte; Sebastien Petit-Watelot; Juan Carlos Rojas-Sanchez; Gregory Malinowski; Stéphane Mangin; Aristide Lemaître; Michel Hehn; Jeffrey Bokor; Richard B. Wilson; Jon Gorchon

    The development of approaches that can efficiently control the magnetization of magnetic materials is central to the creation of fast and low-power spintronic devices. Spin transfer torque can be used to electrically manipulate magnetic order in devices, but is typically limited to nanosecond timescales. Alternatively, spin–orbit torque can be employed, and switching with current pulses down to ~200 ps

    更新日期:2020-10-28
  • Thermal generation, manipulation and thermoelectric detection of skyrmions
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-26
    Zidong Wang; Minghua Guo; Heng-An Zhou; Le Zhao; Teng Xu; Riccardo Tomasello; Hao Bai; Yiqing Dong; Soong-Geun Je; Weilun Chao; Hee-Sung Han; Sooseok Lee; Ki-Suk Lee; Yunyan Yao; Wei Han; Cheng Song; Huaqiang Wu; Mario Carpentieri; Giovanni Finocchio; Mi-Young Im; Shi-Zeng Lin; Wanjun Jiang

    The efficient generation, manipulation and detection of magnetic skyrmions are important for the development of future spintronic devices. One approach is to use electric-current-induced spin torques. Recently, thermally induced skyrmion motion has also been observed, but wider experimental evidence and its capabilities remain limited. Here we report the thermal generation, manipulation and thermoelectric

    更新日期:2020-10-28
  • Time to switch to ferroelectronics?
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19

    Ferroelectric field-effect transistors could play a key role in the development of data-centric computing hardware.

    更新日期:2020-10-19
  • Perovskite transistors clean up their act
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Huihui Zhu; Ao Liu; Yong-Young Noh

    A cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.

    更新日期:2020-10-19
  • 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Dimitra G. Georgiadou; James Semple; Abhay A. Sagade; Henrik Forstén; Pekka Rantakari; Yen-Hung Lin; Feras Alkhalil; Akmaral Seitkhan; Kalaivanan Loganathan; Hendrik Faber; Thomas D. Anthopoulos

    Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency

    更新日期:2020-10-19
  • Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interface
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Baodan Zhao; Yaxiao Lian; Linsong Cui; Giorgio Divitini; Gunnar Kusch; Edoardo Ruggeri; Florian Auras; Weiwei Li; Dexin Yang; Bonan Zhu; Rachel A. Oliver; Judith L. MacManus-Driscoll; Samuel D. Stranks; Dawei Di; Richard H. Friend

    Light-emitting diodes based on halide perovskites have recently reached external quantum efficiencies of over 20%. However, the performance of visible perovskite light-emitting diodes has been hindered by non-radiative recombination losses and limited options for charge-transport materials that are compatible with perovskite deposition. Here, we report efficient, green electroluminescence from mixed-dimensional

    更新日期:2020-10-19
  • Wafer-scale integration of two-dimensional materials in high-density memristive crossbar arrays for artificial neural networks
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Shaochuan Chen; Mohammad Reza Mahmoodi; Yuanyuan Shi; Chandreswar Mahata; Bin Yuan; Xianhu Liang; Chao Wen; Fei Hui; Deji Akinwande; Dmitri B. Strukov; Mario Lanza

    Two-dimensional materials could play an important role in beyond-CMOS (complementary metal–oxide–semiconductor) electronics, and the development of memristors for information storage and neuromorphic computing using such materials is of particular interest. However, the creation of high-density electronic circuits for complex applications is limited due to low device yield and high device-to-device

    更新日期:2020-10-19
  • A magnonic directional coupler for integrated magnonic half-adders
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Q. Wang; M. Kewenig; M. Schneider; R. Verba; F. Kohl; B. Heinz; M. Geilen; M. Mohseni; B. Lägel; F. Ciubotaru; C. Adelmann; C. Dubs; S. D. Cotofana; O. V. Dobrovolskiy; T. Brächer; P. Pirro; A. V. Chumak

    Magnons, the quanta of spin waves, could be used to encode information in beyond-Moore computing applications, and magnonic device components, including logic gates, transistors and units for non-Boolean computing, have already been developed. Magnonic directional couplers, which can function as circuit building blocks, have also been explored, but have been impractical because of their millimetre

    更新日期:2020-10-19
  • The future of ferroelectric field-effect transistor technology
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Asif Islam Khan; Ali Keshavarzi; Suman Datta

    The discovery of ferroelectricity in oxides that are compatible with modern semiconductor manufacturing processes, such as hafnium oxide, has led to a re-emergence of the ferroelectric field-effect transistor in advanced microelectronics. A ferroelectric field-effect transistor combines a ferroelectric material with a semiconductor in a transistor structure. In doing so, it merges logic and memory

    更新日期:2020-10-19
  • A solvent-based surface cleaning and passivation technique for suppressing ionic defects in high-mobility perovskite field-effect transistors
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-19
    Xiao-Jian She; Chen Chen; Giorgio Divitini; Baodan Zhao; Yang Li; Junzhan Wang; Jordi Ferrer Orri; Linsong Cui; Weidong Xu; Jun Peng; Shuo Wang; Aditya Sadhanala; Henning Sirringhaus

    Organometal halide perovskite semiconductors could potentially be used to create field-effect transistors (FETs) with high carrier mobilities. However, the performance of these transistors is currently limited by the migration of ionic surface defects. Here, we show that a surface cleaning and passivation technique, which is based on a sequence of three solution-based steps, can reduce the concentration

    更新日期:2020-10-19
  • Repairable integrated circuits for space
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-07
    Yangyang Wang; Lin Xiao

    Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.

    更新日期:2020-10-08
  • A shift in molecular devices
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-07
    Roberto Otero

    With the help of a gate electrode to control the charge state of individual molecules on graphene, information can be moved along a one-dimensional molecular chain, mimicking the behaviour of an electronic shift register.

    更新日期:2020-10-08
  • Real-time in situ optical tracking of oxygen vacancy migration in memristors
    Nat. Electron. (IF 27.5) Pub Date : 2020-10-05
    Giuliana Di Martino; Angela Demetriadou; Weiwei Li; Dean Kos; Bonan Zhu; Xuejing Wang; Bart de Nijs; Haiyan Wang; Judith MacManus-Driscoll; Jeremy J. Baumberg

    Resistive switches, which are also known as memristors, are low-power, nanosecond-response devices that are used in a range of memory-centric technologies. Driven by an externally applied potential, the switching mechanism of valence change resistive memories involves the migration, accumulation and rearrangement of oxygen vacancies within a dielectric medium, leading to a change in electrical conductivity

    更新日期:2020-10-05
  • A molecular shift register made using tunable charge patterns in one-dimensional molecular arrays on graphene
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-28
    Hsin-Zon Tsai; Johannes Lischner; Arash A. Omrani; Franklin Liou; Andrew S. Aikawa; Christoph Karrasch; Sebastian Wickenburg; Alexander Riss; Kyler C. Natividad; Jin Chen; Won-Woo Choi; Kenji Watanabe; Takashi Taniguchi; Chenliang Su; Steven G. Louie; Alex Zettl; Jiong Lu; Michael F. Crommie

    The ability to tune the electronic properties of molecular arrays is an important step in the development of molecule-scale electronic devices. However, control over internal device charge distributions by tuning interactions between molecules has proved challenging. Here, we show that gate-tunable charge patterning can occur in one-dimensional molecular arrays on graphene field-effect transistors

    更新日期:2020-09-28
  • Programmable devices based on reversible solid-state doping of two-dimensional semiconductors with superionic silver iodide
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-28
    Sung-Joon Lee; Zhaoyang Lin; Jin Huang; Christopher S. Choi; Peng Chen; Yuan Liu; Jian Guo; Chuancheng Jia; Yiliu Wang; Laiyuan Wang; Qingliang Liao; Imran Shakir; Xidong Duan; Bruce Dunn; Yue Zhang; Yu Huang; Xiangfeng Duan

    Two-dimensional (2D) semiconductors are attractive for electronic devices with atomically thin channels. However, controlling the electronic properties of the 2D materials by incorporating impurity dopants is inherently difficult due to the limited physical space in the atomically thin lattices. Here we show that a solid-state ionic doping approach can be used to tailor the carrier type in 2D semiconductors

    更新日期:2020-09-28
  • Large-scale flexible and transparent electronics based on monolayer molybdenum disulfide field-effect transistors
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-21
    Na Li; Qinqin Wang; Cheng Shen; Zheng Wei; Hua Yu; Jing Zhao; Xiaobo Lu; Guole Wang; Congli He; Li Xie; Jianqi Zhu; Luojun Du; Rong Yang; Dongxia Shi; Guangyu Zhang

    Atomically thin molybdenum disulfide (MoS2) is a promising semiconductor material for integrated flexible electronics due to its excellent mechanical, optical and electronic properties. However, the fabrication of large-scale MoS2-based flexible integrated circuits with high device density and performance remains a challenge. Here, we report the fabrication of transparent MoS2-based transistors and

    更新日期:2020-09-21
  • Rethinking negative capacitance research
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-18

    Negative capacitance field-effect transistors have been proposed as a route to low-power electronics, but a lack of fundamental understanding limits progress.

    更新日期:2020-09-20
  • Hardware design and the competency awareness of a neural network
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-18
    Yukun Ding; Weiwen Jiang; Qiuwen Lou; Jinglan Liu; Jinjun Xiong; Xiaobo Sharon Hu; Xiaowei Xu; Yiyu Shi

    The ability to estimate the uncertainty of predictions made by a neural network is essential when applying neural networks to tasks such as medical diagnosis and autonomous vehicles. The approach is of particular relevance when deploying the networks on devices with limited hardware resources, but existing competency-aware neural networks largely ignore any resource constraints. Here we examine the

    更新日期:2020-09-20
  • What’s next for negative capacitance electronics?
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-09
    Michael Hoffmann; Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick

    Progress towards low-power electronics based on negative capacitance has been slow. For the field to develop, the gap between fundamental research on ferroelectric materials and the engineering of practical devices needs to be bridged.

    更新日期:2020-09-10
  • An aquatic-eye inspired miniature camera
    Nat. Electron. (IF 27.5) Pub Date : 2020-09-04
    Zhenqiang Ma

    A monocentric lens and a sensitive hemispherical imager can be combined to create a miniaturized camera that offers a field of view of 120°, deep depth of field and minimal optical aberration.

    更新日期:2020-09-05
  • A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-24
    Darsith Jayachandran; Aaryan Oberoi; Amritanand Sebastian; Tanushree H. Choudhury; Balakrishnan Shankar; Joan M. Redwing; Saptarshi Das

    Accurately detecting a potential collision and triggering a timely escape response is critical in the field of robotics and autonomous vehicle safety. The lobula giant movement detector (LGMD) neuron in locusts can detect an approaching object and prevent collisions within a swarm of millions of locusts. This single neuronal cell performs nonlinear mathematical operations on visual stimuli to elicit

    更新日期:2020-08-25
  • Radiation-hardened and repairable integrated circuits based on carbon nanotube transistors with ion gel gates
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-24
    Maguang Zhu; Hongshan Xiao; Gangping Yan; Pengkun Sun; Jianhua Jiang; Zheng Cui; Jianwen Zhao; Zhiyong Zhang; Lian-Mao Peng

    Electronics devices that operate in outer space and nuclear reactors require radiation-hardened transistors. However, high-energy radiation can damage the channel, gate oxide and substrate of a field-effect transistor (FET), and redesigning all vulnerable parts to make them more resistant to total ionizing dose irradiation has proved challenging. Here, we report a radiation-hardened FET that uses semiconducting

    更新日期:2020-08-25
  • An analogue future for 2D
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-18

    Two-dimensional materials could first find widespread commercial application in analogue electronics, rather than as a replacement for silicon in digital devices.

    更新日期:2020-08-19
  • Opportunities and challenges for spintronics in the microelectronics industry
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-18
    B. Dieny; I. L. Prejbeanu; K. Garello; P. Gambardella; P. Freitas; R. Lehndorff; W. Raberg; U. Ebels; S. O. Demokritov; J. Akerman; A. Deac; P. Pirro; C. Adelmann; A. Anane; A. V. Chumak; A. Hirohata; S. Mangin; Sergio O. Valenzuela; M. Cengiz Onbaşlı; M. d’Aquino; G. Prenat; G. Finocchio; L. Lopez-Diaz; R. Chantrell; O. Chubykalo-Fesenko; P. Bortolotti

    Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics

    更新日期:2020-08-19
  • Author Correction: How we created neuromorphic engineering
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-17
    Carver Mead

    An amendment to this paper has been published and can be accessed via a link at the top of the paper.

    更新日期:2020-08-18
  • Analogue two-dimensional semiconductor electronics
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-17
    Dmitry K. Polyushkin; Stefan Wachter; Lukas Mennel; Matthias Paur; Maksym Paliy; Giuseppe Iannaccone; Gianluca Fiori; Daniel Neumaier; Barbara Canto; Thomas Mueller

    Digital electronics are ubiquitous in the modern world, but analogue electronics also play a crucial role in many devices and applications. Analogue circuits are typically manufactured using silicon as the active material. However, the desire for improved performance, new devices and flexible integration has—as for their digital counterparts—led to research into alternative materials, including the

    更新日期:2020-08-17
  • A generic electroluminescent device for emission from infrared to ultraviolet wavelengths
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-10
    Yingbo Zhao; Vivian Wang; Der-Hsien Lien; Ali Javey

    The range of luminescent materials that can be used in electroluminescent devices is limited due to material processing challenges and band alignment issues. This impedes the development of electroluminescent devices at extreme wavelengths and hinders the use of electroluminescence spectroscopy as an analytical technique. Here, we show that a two-terminal device that uses an array of carbon nanotubes

    更新日期:2020-08-10
  • Large exchange splitting in monolayer graphene magnetized by an antiferromagnet
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-10
    Yingying Wu; Gen Yin; Lei Pan; Alexander J. Grutter; Quanjun Pan; Albert Lee; Dustin A. Gilbert; Julie A. Borchers; William Ratcliff; Ang Li; Xiao-dong Han; Kang L. Wang

    Spin splitting in graphene is required to develop graphene-based multifunctional spintronic devices with low dissipation and long-distance spin transport. Magnetic proximity effects are a promising route to realize exchange splitting in the material, which is otherwise intrinsically non-spin-polarized. Here, we show that monolayer graphene can be magnetized by coupling to an antiferromagnetic thin

    更新日期:2020-08-10
  • Native high- k oxides for 2D transistors
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-05
    Yury Yu. Illarionov; Theresia Knobloch; Tibor Grasser

    The two-dimensional semiconductor Bi2O2Se can be oxidized to create an atomically thin layer of Bi2SeO5 that can be used as the insulator in scaled field-effect transistors.

    更新日期:2020-08-05
  • Ferroelectric tunnel junctions with high tunnelling electroresistance
    Nat. Electron. (IF 27.5) Pub Date : 2020-08-05
    Xinran Wang; Jianlu Wang

    A van der Waals ferroelectric tunnel junction with asymmetric metal and graphene contacts exhibits a high resistance ratio between on and off states, and could be of value in the development of low-power computing.

    更新日期:2020-08-05
  • A native oxide high- κ gate dielectric for two-dimensional electronics
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-27
    Tianran Li; Teng Tu; Yuanwei Sun; Huixia Fu; Jia Yu; Lei Xing; Ziang Wang; Huimin Wang; Rundong Jia; Jinxiong Wu; Congwei Tan; Yan Liang; Yichi Zhang; Congcong Zhang; Yumin Dai; Chenguang Qiu; Ming Li; Ru Huang; Liying Jiao; Keji Lai; Binghai Yan; Peng Gao; Hailin Peng

    Silicon-based transistors are approaching their physical limits and thus new high-mobility semiconductors are sought to replace silicon in the microelectronics industry. Both bulk materials (such as silicon-germanium and III–V semiconductors) and low-dimensional nanomaterials (such as one-dimensional carbon nanotubes and two-dimensional transition metal dichalcogenides) have been explored, but, unlike

    更新日期:2020-07-27
  • Bipolar device fabrication using a scanning tunnelling microscope
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-27
    Tomáš Škereň; Sigrun A. Köster; Bastien Douhard; Claudia Fleischmann; Andreas Fuhrer

    Hydrogen-resist lithography with the tip of a scanning tunnelling microscope can be used to fabricate atomic-scale dopant devices in silicon substrates and could potentially be used to build a dopant-based quantum computer. However, all devices fabricated so far have been based on the n-type dopant precursor phosphine. Here, we show that diborane can be used as a p-type dopant precursor, allowing p-type

    更新日期:2020-07-27
  • Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-27
    Georg Gramse; Alexander Kölker; Tomáš Škereň; Taylor J. Z. Stock; Gabriel Aeppli; Ferry Kienberger; Andreas Fuhrer; Neil J. Curson

    Integrated circuits and certain silicon-based quantum devices require the precise positioning of dopant nanostructures, and hydrogen resist lithography can be used to fabricate such structures at the atomic-scale limit. However, there is no single technique capable of measuring the three-dimensional location and electrical characteristics of these dopant nanostructures, as well as the charge dynamics

    更新日期:2020-07-27
  • Publisher Correction: How we created neuromorphic engineering
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-24
    Carver Mead

    An amendment to this paper has been published and can be accessed via a link at the top of the paper.

    更新日期:2020-07-25
  • Computing on the brain
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-21

    Neuromorphic computing might be the answer to AI’s hardware problem.

    更新日期:2020-07-21
  • How we created neuromorphic engineering
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-21
    Carver Mead

    Neuromorphic engineering aims to create computing hardware that mimics biological nervous systems, and it is expected to play a key role in the next era of hardware development. Carver Mead recounts how it all began.

    更新日期:2020-07-21
  • The business of building brains
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-21
    Sunny Bains

    Neuromorphic engineering attempts to create brain-like computing hardware and has helped reawaken interest in computer chip start-ups. But is the technology ready for mainstream application?

    更新日期:2020-07-21
  • Neuro-inspired computing chips
    Nat. Electron. (IF 27.5) Pub Date : 2020-07-21
    Wenqiang Zhang; Bin Gao; Jianshi Tang; Peng Yao; Shimeng Yu; Meng-Fan Chang; Hoi-Jun Yoo; He Qian; Huaqiang Wu

    The rapid development of artificial intelligence (AI) demands the rapid development of domain-specific hardware specifically designed for AI applications. Neuro-inspired computing chips integrate a range of features inspired by neurobiological systems and could provide an energy-efficient approach to AI computing workloads. Here, we review the development of neuro-inspired computing chips, including

    更新日期:2020-07-21
Contents have been reproduced by permission of the publishers.
导出
全部期刊列表>>
微生物研究
亚洲大洋洲地球科学
NPJ欢迎投稿
自然科研论文编辑
ERIS期刊投稿
欢迎阅读创刊号
自然职场,为您触达千万科研人才
spring&清华大学出版社
城市可持续发展前沿研究专辑
Springer 纳米技术权威期刊征稿
全球视野覆盖
施普林格·自然新
chemistry
物理学研究前沿热点精选期刊推荐
自然职位线上招聘会
欢迎报名注册2020量子在线大会
化学领域亟待解决的问题
材料学研究精选新
GIANT
ACS ES&T Engineering
ACS ES&T Water
屿渡论文,编辑服务
阿拉丁试剂right
上海中医药大学
浙江大学
清华大学
南科大
北京理工大学
清华
隐藏1h前已浏览文章
课题组网站
新版X-MOL期刊搜索和高级搜索功能介绍
ACS材料视界
清华大学-1
武汉大学
浙江大学
天合科研
x-mol收录
试剂库存
down
wechat
bug