An Erratum to this paper has been published: https://doi.org/10.1134/S1063782621030192

Abstract An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments

Abstract The features of the electrochemical deposition of metal coatings on p-Si are presented, and the properties of the grown metal layers are measured. The dependence of the depleted-region thickness and the internal voltage drop in it on the electrolyte composition and deposited metal type is studied. The effect of the current density and electrolyte composition on the precipitate properties is

Abstract The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models) of quantum dots with the same characteristic size

Abstract Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO2|SiN is investigated. Capacitance-voltage at various temperatures (C–V–T)

Abstract Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga8Tl2N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.

Abstract The effects of the high-temperature (T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals

Abstract The propagation of solitary acoustic pulses in magnetized quantum electron–hole plasmas of semiconductors has been studied. The effects of an external magnetic field and quantum terms, including the electrons and holes quantum recoil effects, exchange-correlation force, and the degenerate pressure of charge carriers are considered. Starting from quantum hydrodynamic equations, by using the

Abstract The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I–V characteristics of the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures have a high sensitivity

Abstract High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largely depended on the etching induced surface damages. To overcome this, a controllable GaN etching method was developed using inductively coupled plasma reactive ion etching (ICP-RIE) by controlling radio frequency (RF) power, and DC bias. The etching

Abstract The anisotropy of the conductivity and the shape of the I–V characteristics for a two-dimensional quantum superlattice with the nonharmonic electron dispersion law are investigated for different directions of the current and field applied to the structure relative to the superlattice axes. The anisotropy of the characteristics and the conditions for the occurrence of multivalue I–V characteristics

Abstract Textured ZnO films obtained on amorphous substrates using the ion-beam sputtering method are studied. X-ray diffraction and atomic-force microscopy methods show that the resulting films have a polycrystalline structure immediately after deposition. It is established that further annealing of the samples in the temperature range from 200°C to 500°C results in recrystallization, which leads

Abstract Copper zinc tin sulphide (CZTS) thin films have been deposited on glass substrate at 323 ± 5 K using sequential ionic layer adsorption reaction (SILAR). The number of SILAR cycles required for optimum crystalline quality CZTS thin films was optimized. The as-deposited CZTS thin films showed kesterite crystalline structure with preferential orientation along (103) plane. Structural, optical

Abstract A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0

Abstract The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magnetron-assisted sputtering of a Ga2O3 target onto (0001)-oriented sapphire substrates. Two types of electrodes are formed on the surface of the oxide films. The first type corresponded

Abstract In the present paper, a Pb-free and eco-friendly perovskite solar cell (PSC) with a new structure of glass|TCO|TiO2|CZTSe1 – xSx|CH3NH3SnI3|back contact has been modeled and simulated by SCAPS-1D package. To verify the simulation process, an experimental report on Pb-free PSC was simulated initially. Then, the costly Spiro-OMeTAD layer as the common hole-transport material (HTM) was eliminated

Abstract Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with

Abstract The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range

In this study, we have presented a systematic theoretical study about the electronic, magnetic and structural properties of the full-Heusler compound Fe2CuSi based on first principles calculations. The L21-type structure with ferromagnetic configuration is determined to be the ground state. The calculated electronic band structures show metallic behavior for both spin direction and the obtained total

Magnetic tunnel junction with perpendicular magnetic anisotropy (p-MTJ) is the core component in spintronics-based memory, logic and sense devices, the synthetic anti-ferromagnetic (SAF) has been used to fix the reference layer and cancel the stray field in free layer and few works report the SAF-based reliability analysis of p-MTJ nanopillars. Here, we developed a complete set of method for single

This research work studies the structural, electronic and magnetic properties of Ge1_xTixTe (for x=0.25, 0.50, 0.75, 1) compounds in rock-salt structure based on first-principles spin-polarized density functional theory. As it is implemented in WIEN2k code, the full-potential augmented plane-wave method was used in the investigation. To evaluate the structural properties of compounds, the exchange-correlation

In high-Tc superconductors, electrons form pairs and electric transport becomes dissipation-less at low temperatures. The iron-based superconductors (FeSCs) have the highest superconducting (SC) transition temperature next to copper oxides. The gap structure and pairing mechanism for FeSCs are hotly discussed as a central issue since their discovery. A model Hamiltonian for the superconductivity in

The spin and pseudo-spin symmetries are analytically investigated by solving the three-dimensional Dirac equation for the Kratzer potential plus a ring-shaped potential. Relativistic Schrödinger-like wave equations coupled in energy are derived from Dirac equation. The energy eigenvalues and eigenfunctions are calculated by solving the coupled relativistic radial, and angular wave equations in the

The theoretical aspects of research on the role of Jahn–Teller (JT) interactions in quasi-two-dimensional iron-based high-Tc superconductors are analyzed. A model Hamiltonian for the JT distortion in iron-based superconductors is proposed by a tight-binding two-orbital model. We have proposed here a s±-wave pairing symmetry of the form coskx×cosky in the model in mean-field approximation. The model

The aim purpose of this study is to investigate the structural, elastic, magnetic, electronic properties and half-metallic stability under pressure of ScNiCrZ (Z=Al, Ga and In) quaternary Heusler alloys using full-potential linear muffin-tin orbital (FP-LMTO) method within the gradient generalized approximation (GGA) for exchange, and correlation potential. In order to evaluate the stability of our

In this paper, we have used the Monte Carlo simulations (MCSs) to investigate the magnetic properties of the brownmillerite KBiFe2O5 (KBFO) compound. The different exchange coupling interactions J1, J2 and J3 between different irons Fe atom have been outlined including the angles between Fe1-O-Fe2. The double exchange interaction is caused by the existence of the oxygen atoms. In a first step, we present

In this work, we have studied the structural, optoelectronic, elastic and thermoelectric properties for halides doubles perovskites compounds K2GeSiX6 (X=F, Cl, Br and I). Based on the linearized augmented plane wave method with full potential (FP-LAPW) method, the previous properties are treated within GGA-PBE and the modified Beck–Johnson correction (mBJ-GGA) approximations. The results show that

The full-potential linearized augmented plane waves (FP-LAPW) method, within the density functional theory (DFT), has been used to investigate the structural and elastic properties of KRbAs, KNaAs and NaRbAs. The obtained results, utilizing the generalized gradient approximation (GGA), revealed that all compounds prefer their type-I structure ferromagnetic (FM) phase. However, only two among them,

Quantum tunneling of the magnetization (QTM) of the spin-1/2 Vanadium-15 (V15) single molecular magnets (SMMs) is investigated by means of the effective field theory developed by Kaneyoshi. We deal with the two hexagon layers (shell, VS) and one triangular interlayer (core, VC) with the spin-1/2 Ising particles. We find that the V15 has a normal ferromagnetic hysteresis behavior for its all spins are

The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters (LPCs). Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure, and analyze the transport process of photogenerated carriers. Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated

The magnetic dynamics of a thin Co2FeAl film epitaxially grown on GaAs substrate was investigated using the time- resolved magneto-optical Kerr measurement under an out-of-plane external field. The intrinsic magnetic damping constant, which should do not vary with the external magnetic field, exhibits an abnormal huge increase when the precession frequency is tuned to be resonant with that of the coherent

A side-channel attack (SCA)-resistant AES S-box implementation is proposed, which is an improvement from the power-aware hiding (PAH) S-box but with higher security and a smaller area. We use the composite field approach and apply the PAH method to the inversion in the nonlinear kernel and a masking method to the other parts. In addition, a delay-matched enable control technique is used to suppress

This paper presents a 1.2 V high accuracy thermal sensor analog front-end circuit with 7 probes placed around the microprocessor chip. This analog front-end consists of a BGR (bandgap reference), a DEM (dynamic element matching) control, and probes. The BGR generates the voltages linear changed with temperature, which are followed by the data read out circuits. The superior accuracy of the BGR’s output

In this paper, the dependencies of Young's modulus and attenuation decrement on samarium sulfide polycrystals (SmS) under various annealing temperatures are studied by the piezoelectric ultrasonic composite oscillator technique at a frequency of 100 kHz in the temperature range of 80–300 K. A decrease in Young's modulus with an increase of the annealing temperature due to the texturing of the material

Polarization-resolved photodetectors, a significant branch of photodetection, can more effectively distinguish the target from the background by exploiting polarization-sensitive characteristics. However, due to the absence of intrinsic polarized absorption properties of many materials, there is still a great challenge to develop the high-performance polarization-resolved photodetectors. Here, we report

The photovoltaic (PV) market is currently dominated by silicon based solar cells. However technological diversification is essential to promote competition, which is the driving force for technological growth. Historically, the choice of PV materials has been limited to the three-dimensional (3D) compounds with a high crystal symmetry and direct band gap. However, to meet the strict demands for sustainable

Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance, large-area uniformity, and low processing temperature. This article reviews the recent progress and major trends in the field of IGZO-based TFTs. After a brief introduction

Purpose The purpose of this study is the design, fabrication and evaluation of a miniature ozone generator using the principle of electric discharge are presented. Design/methodology/approach The device was fabricated using a low-temperature co-fired ceramics (LTCC) technology, by which a multilayered ceramic structure with integrated electrodes, buried channels and cavities in micro and millimeter

Purpose Optimization of light-emitting diodes’ (LEDs’) design together with long-term reliability is directly correlated with their photometric, electric and thermal characteristics. For a given thermal layout of the LED system, the maximum luminous flux occurs at an optimal electrical input power and can be determined using a photo-electro-thermal (PET) theory. The purpose of this study is to extend

Purpose This paper aims to present an adaptation of digital image correlation (DIC) to the electronics industry for reliability assessment of electronic packages. Two case studies are presented: one for warpage measurement of a micro-electro-mechanical system (MEMS) package under different temperature conditions and the other for the measurement of transient displacements on the surface of a printed

Purpose In the past several years, CH3NH3PbI3 perovskite material has been extensively evaluated as an absorber layer of perovskite solar cells due to its excellent structural and optical properties, and greater than 22% conversion efficiency. However, improvement and future commercialization of solar cells based on CH3NH3PbI3 encountered restrictions due to toxicity and instability of the lead element

We demonstrate the key module of comparators in GaN ICs, based on resistor-transistor logic (RTL) on E-mode wafers in this work. The fundamental inverters in the comparator consist of a p-GaN gate HEMT and a 2DEG resistor as the load. The function of the RTL comparators is finally verified by a undervoltage lockout (UVLO) circuit. The compatibility of this circuit with the current p-GaN technology

Purpose This paper aims to determine the optimum set of temperatures through correlation study to attain the most effective capillary flow of underfill in a multi-stack ball grid array (BGA) chip device. Design/methodology/approach Finite volume method is implemented in the simulation. A three-layer multi-stack BGA is modeled to simulate the underfill flow. The simulated models were well validated

Memristors are now becoming a prominent candidate to serve as the building blocks of non-von Neumann in-memory computing architectures. By mapping analog numerical matrices into memristor crossbar arrays, efficient multiply accumulate operations can be performed in a massively parallel fashion using the physics mechanisms of Ohm’s law and Kirchhoff’s law. In this brief review, we present the recent

Von Neumann computers are currently failing to follow Moore’s law and are limited by the von Neumann bottleneck. To enhance computing performance, neuromorphic computing systems that can simulate the function of the human brain are being developed. Artificial synapses are essential electronic devices for neuromorphic architectures, which have the ability to perform signal processing and storage between

Non-volatile memory (NVM) devices with non-volatility and low power consumption properties are important in the data storage field. The switching mechanism and packaging reliability issues in NVMs are of great research interest. The switching process in NVM devices accompanied by the evolution of microstructure and composition is fast and subtle. Transmission electron microscopy (TEM) with high spatial

Abstract The thermal expansion and thermal conductivity of In2S3 and AgIn5S8 single-crystal compounds and (In2S3)x(AgIn5S8)1 – x alloys grown by the Bridgman method are studied. It is established that the thermal-expansion coefficient linearly varies under changes in the composition parameter x and the thermal conductivity has a minimum for the equimolar composition. From experimental data on the thermal-expansion

Abstract The molecular-dynamics simulation of the formation of dimers for the case of the low-temperature (001) reconstruction of a GaAs surface terminated in Ga or As atoms is employed using the analytical potential, which takes into account σ- and π-bonds between atoms. The values of the decrease in the potential energy of atoms during the formation of the surface of an isolated dimer are found,

Abstract Models of the densities of states of amorphous graphene and graphene-like binary compounds are proposed. The models are used for estimations of the quantum capacitance of these structures. It is shown that amorphization reduces the quantum capacitance. The same effect takes place if graphene or a graphene-like compound interacts with a metal substrate. At the same time, in the case of a semiconductor

Abstract The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amplification lengths of the emission spectral components, i.e., the different distances over which different emission components are amplified in

Abstract According to developed methods, in the fields of the mutual solubility of initial binary compounds (InP, InSb, and CdS), solid solutions of the InP–CdS and InSb–CdS systems certified as substitutional solid solutions with a cubic sphalerite structure are obtained. Their bulk (crystal-chemical, structural) and surface (the chemical composition of surfaces, acid-base) properties are studied

Abstract The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures

Abstract Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide range of electronic and photonic applications. The most widely employed growth plane for III-nitrides is the polar plane, characterized by the presence of a polarization-induced internal electric field in heterostructures. To eliminate the deleterious effects of polarization, III-nitride devices grown

Abstract Radiation-induced effects in Cu(In,Ga)Se2 alloy thin films after implantation with hydrogen ions with energies of 2.5, 5, and 10 keV and a dose of ~3 × 1015 cm–2 are studied. Comparative analysis of the optical characteristics of nonimplanted and hydrogen-implanted Cu(In,Ga)Se2 films is conducted on the basis of photoluminescence spectra and luminescence-excitation spectra recorded at liquid-helium

Abstract The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic

Abstract A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO)

Abstract Nanoheterostructures based on titanium dioxide synthesized by the sol–gel technique are studied. Microscopy, X-ray diffraction, optical spectroscopy, and electron-spin resonance techniques are used. All the investigated samples are characterized by a large specific surface area (~100 m2 per 1 g substance). It is established that the main types of radicals in the obtained structures are N•

Abstract The non-doped and alkali (Na,K)-doped Cu2ZnSnS4 (CZTS) thin films were prepared using the sol–gel spin-coating method on the glass substrate, and the changes in the structural, optical, and electrical characteristics of the films were examined and compared. The structural study results obtained showed that all the prepared samples had a kesterite structure. The scanning electron microscopy

Abstract The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal—oxide—semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding

Abstract With the continuous development of optoelectronic devices, parasitic capacitance of electrostatic protection device in the optoelectronic control circuit has become an important factor affecting its response speed. This work designs and manufactures a novel light-controlled dual-directional gate silicon-controlled rectifier (LDGSCR) to study the relationship between light and parasitic capacitance