Biosensor technology is a quite attractive and rapidly developing research field in recent years, and the sub field of optical photonic crystal (PC) biosensor based on label free sensing technology has also made great progress in this period. This review mainly concentrates on advances in the label free refractometric sensing based two dimensional (2D) PC slab biosensors particularly in the last decade

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On behalf of myself and my fellow Guest Editors for the Special Issue on Ultra Wide Band Gap Semiconductors for Power Control and Conversion appearing in this month’s issue of the IEEE Transactions on Electron Devices, we are gratified to be able to present readers with a selection of papers spanning the current state of the art in wide and ultrawidebandgap semiconductor devices. Electronics for power

With projected performance advantages over silicon and incumbent wide-bandgap compound semiconductors, gallium oxide (Ga 2 O 3 ) has garnered worldwide attention as an ultrawide-bandgap semiconductor material suitable for high-voltage, high-temperature, and radiation-hard electronics. Thanks to recent breakthroughs in crystal growth and device processing technologies, the research and development of

We present a detailed investigation of the trapping and detrapping mechanisms that take place in the gate region of $\beta $ -Ga 2 O 3 vertical finFETs and describe the related processes. This analysis is based on combined pulsed characterization, transient measurements, and tests carried out under monochromatic light, with photon energies between 1.5 and 5 eV. The original results presented in this

We report an experimental demonstration of GaN-based vertical-channel junction field-effect transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition (MOCVD) and a subsequent self-planarization process were developed to fabricate the GaN VC-JFETs. Fin-like channel regions were patterned by electron beam lithography (EBL) and aligned to ${m}$ -plane or ${a}$ -plane. The electrical

This article reports trap-related forward conduction instability of GaN quasi-vertical p-i-n diodes grown on a Si substrate. Three hole traps with activation energies of 0.38, 0.60, and 0.70 eV together with one electron trap with an energy level of 0.26 eV under the conduction band were revealed by deep-level transient spectroscopy (DLTS). Pulsed ${I}$ – ${V}$ measurements were performed on a device

We survey impact-ionization coefficients for silicon, wide bandgap semiconductors (gallium nitride and 4H-silicon carbide), and ultrawide-bandgap semiconductors (aluminum gallium nitride, beta-gallium oxide, and diamond). We employ a custom genetic algorithm to fit those existing coefficients into a modified Thornber model. This fitting process leads to an estimation of material properties, such as

Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor

Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal–oxide-semiconductor-based design (CMOS)

This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted to OFF-state stress. We demonstrate that stress induces an increase in ON-resistance and a shift in the threshold voltage, along with a decrease in the transconductance peak value. These effects are ascribed to the generation of defects

In this article, the failure mechanism of a 1.2-kV monolithic junction barrier-controlled Schottky diode integrated silicon carbide metal–oxide–semiconductor field-effect transistor (JMOS) under short-circuit (SC) tests has been investigated by an experimental validation and simulation analysis. As a new type of device, JMOS has superior performance and chip area efficiency. However, the SC ruggedness

The anomalous RF inductive effect in which ${S}_{{21}}$ - and ${S}_{{22}}$ -parameters rotate clockwise in the lower and upper half-circles, respectively, with increasing the frequency at the high ${V}_{\text {DS}}$ region has been investigated in body contact (BCT) high-resistivity (HR) partially depleted (PD) silicon-on-insulator (SOI) nMOSFETs with a very high aspect ratio of gate finger. The negative

In this article, an analytical thermal conductivity model for confined nanochannel in gate-all-around silicon nanowire field-effect transistors (GAA SiNW FETs) is developed by considering the limitations caused by the cross section and length. A geometry dependence of phonon mean free path (MFP) is established for quantitatively analyzing the influence of cross-sectional dimension. Furthermore, the

We report improvement of TiN/Y 2 O 3 / Si 0.78 Ge 0.22 metal-oxide-semiconductor (MOS) interface properties by employing the trimethylaluminum (TMA) pretreatment before Y 2 O 3 deposition. It is found that the optimum number of the TMA pretreatment cycles for minimizing interface trap density ( ${D}_{\text {it}}$ ) and slow trap density ( $\Delta {N}_{\text {st}}$ ) of TiN/Y 2 O 3 /SiGe interfaces

The recently proposed stacked nanosheet-field-effect transistor (SNSH-FET) is considered as a promising candidate for continued scaling with silicon. While using punchthrough-stopper-doped (or) ground-plane-doped silicon substrate (PTS-Si substrate) in which the top part of the substrate is doped heavily with the p-type (for nMOS) impurity to avoid punchthrough leakage between the source and the drain

The distinct photoresponse of the floating channels and the parasitic channels can be a signature to check the existence of the parasitic channel. The photoresponse of the sole parasitic channel mainly shows the photocurrent ( ${I}_{\text {ph}}$ ), while the photoresponse of the sole floating channels without parasitic channel shows the negative threshold voltage shift ( $\Delta {V}_{\text {T}}$ )

The self-heating effects in vacuum gate dielectric gate-all-around field effect transistors (GAA FETs) with vertically stacked 4-nm silicon nanowire (SiNW) channels are investigated by 3-D TCAD simulation. The cross-sectional dimension-dependent thermal conductivity model of the SiNW is proposed for the precise numerical simulation of self-heating effects based on the temperature-dependent thermal

The temperature dependence of defect generation due to hot-carrier stress (HCS) is investigated in long-channel nMOSFETs with a SiO 2 insulator. In order to improve the understanding of hot-carrier degradation, we systematically investigate the impact of temperature on the HCS-induced trap densities and their energetic profiles using standard and spectroscopic charge pumping (CP). With the aid of polyheaters

Germanium is commonly suggested as an alternative for power electronic devices in emerging liquid hydrogen applications. Despite the clear benefits of a twofold conductivity increase and fabrication familiarity within the community, very few models exist, which describe the temperature-dependent electrical characteristics of the material. Here, models are presented and adapted, which describe the temperature

The introduction of graphene (Gr) with high thermal conductivity between GaAs and metal electrode can reduce the internal temperature rise and thermal stress accumulation of high-power chips, such as photoconductive switches, protect the contact electrode, and improve the device stability. Meanwhile, the introduction of graphene has the potential to decrease the interface contact resistance. It is

This article describes the thermal resistance “junction-to-case” measurement results for GaN high-electron mobility transistors (HEMTs). The measurements were taken by using the apparatus which includes two methods of thermal resistance measurements. For the first one that uses standard MIL-STD-750-3, a sequence of heating current pulses passes through the transistor channel and then the junction temperature

The effect of gate-length variation on key transistor metrics for vertical nanowire p-type GaSb metal–oxide–semiconductor field-effect transistors (MOSFETs) are demonstrated using a gate-last process. The new fabrication method enables short gate-lengths ( ${L}_{g} =40$ nm) and allows for selective digital etching of the channel region. Extraction of material properties as well as contact resistance

This article presents a finger-type gallium nitride (GaN) Schottky barrier diode (SBD)-based microwave rectifier with medium-power capacity and wide power bandwidth. A complete solution including SBD design and fabrication, model extraction, circuit optimization, and demonstration is proposed. The finger-type anode and critical thickness epitaxial layer techniques are adopted to reduce the GaN SBD

Schottky-barrier field-effect transistors (SBF-ETs) based on 2-D semiconductors had been investigated as a substitute for a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) based on bulk silicon in the field of high-performance (HP) device. Especially, the monolayer SiC has been studied because it has a large band gap, which results in reducing the short-channel effect. In this

In this article, an ultrathin-barrier (UTB) AlGaN/GaN diode featuring metal–insulator–semiconductor (MIS)-gated hybrid anode (MG-HAD) and in situ Si 3 N 4 cap passivation is demonstrated. The intrinsic turn-on voltage ( ${V}_{\mathrm{ON}}$ ) as low as 0.31 V determined by the as-grown AlGaN-barrier thickness (4.9 nm) is obtained and the ${V}_{\mathrm{ON}}$ exhibits excellent uniformity. More importantly

We have investigated the impact of relative gate position between source and drain on the DC and RF characteristics for AlGaN/GaN high electron mobility transistors. Devices with fixed source drain separation ( ${L}_{\text {SD}}$ ) of $5~\mu \text {m}$ , width ( ${W}$ ) of ${2}\times {50}\,\,\mu \text {m}$ and gate length ( ${L}_{G}$ ) of 200 nm are fabricated and characterized. The relative position

In order to further improve the electrical characteristics of AlGaN-buffer devices, we propose a new in situ SiN/AlGaN-sandwich-barrier (SWB)/GaN/Al 0.05 GaN high-electron mobility transistors (HEMTs). The dc, channel temperature, and RF temperature of the proposed AlGaN-buffer devices have been systematically studied and analyzed. The SWB structure can effectively reduce the peak value of the electric

The threshold voltage variability of the select transistors is an important issue in the development of 3-D NAND flash memory. Particularly, pillar-to-pillar variations in threshold voltage ( ${V}_{\text {T}}$ ) of the ground select transistor (GST) are critical across the wafer. The ${V}_{\text {T}}$ variation is attributed to the nonuniformity in the plug height of the epitaxially grown silicon layers

In this article, we present an appropriate compact model of spacer (SP) region for static characteristics of 3-D NAND flash memories. Though many studies on 3-D NAND flash have focused on the intrinsic part, they have not considered analysis on the SP region with gate-surrounded structure which is inevitable for 3-D NAND flash string due to punch-and-plug process. We focus on the electrostatics on

In a digital–analog mixed neuromorphic system, various complex peripheral circuits may offset the integration and energy efficiency advantages of the dense crossbar. To simplify the peripheral circuits, a self-activation neural network (SANN) is proposed based on a passive crossbar array formed by the rectified memristive (ReMem) cell. The ReMem cell is a dual-mode resistive switching device with a

This article demonstrates a novel technique for watermarking commercial off-the-shelf NAND flash memory chips. The technique uses repeated program-erase stressing to selectively control the physical properties of the flash cells and hence imprint watermark information into the flash media in an irreversible manner. It is accompanied by a watermark reading method that uses program disturb effects to

In this article, the electrical noise signal triggered switching of resistive random access memory (RRAM) device is investigated. As noise is also generated when powering up the light source, such a phenomenon can be easily mistaken as a light-activated event. Thus, it is necessary to conduct a “dark test” on the light-related experimental work to make a correct judgment of the observation. Although

Deep neural network (DNN) hardware designs have been bottlenecked by conventional memories, such as SRAM due to density, leakage, and parallel computing challenges. Resistive devices can address the density and volatility issues but have been limited by peripheral circuit integration. In this work, we present a resistive RAM (RRAM)-based in-memory computing (IMC) design, which is fabricated in 90-nm

The thermal budget of the standard integrated circuits (ICs) manufacturing process is one of the key considerations in the development of resistive random access memory (RRAM). To investigate the thermal budget effect on device performance, three types of HfO x -based RRAM devices with different top electrodes are subjected to postmetalization annealing (PMA) at 400 °C for more than three hours. Electrical

Atomic layer deposition (ALD)-based TiN electrode on ferroelectric HfZrO 2 metal/ferroelectric/metal (MFM) capacitor and ferroelectric field-effect transistor (FeFET) is demonstrated experimentally with weight transfer, that is, $\Delta {P}$ , per pulse analysis through consecutive alternating potentiation/depression (Pot./Dep.) training pulses. The weight training pulse schemes are studied to have

One of the key challenges in the reliability of valence change [valence change-based memory (VCM)] resistive switching random access memories (ReRAMs) is the short-term instability of the programed state. Due to read noise, program verify or shaping algorithms are ineffective and read current (or resistance) distributions always revert to their intrinsic statistics. In this work, we analyze the instability

In this article, we propose an energy-efficient monolithic 3-D (M3D) three-tier SRAM cell with back-end-of-the-line (BEOL) back-gated (BG) MoS 2 FETs. The impacts of wire routing resistance and capacitance, gate topology of MoS 2 FETs, and the layout optimization of multitier 6T SRAM cells have been comprehensively analyzed for SoC scaling through system-technology co-optimization. SRAM plays an integral

The Al-doped HfO x -based resistive memory devices have been fabricated on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) flexible substrate at room temperature. X-ray photoelectron spectroscopy is used to extract the different doping percentage of Al which allows optimizing the switching performance. It improves the cycle-to-cycle and cell-to-cell uniformity of switching parameters

The use of carbon-based (C-based) liners is investigated for RESET current reduction in self-heating, pillar-shaped phase-change memory (PCM) cells for storage class memory (SCM) technologies. The liner is inserted between the top electrode and the phase-change layer. A finite element analysis (FEA) is done to simulate the effect of this liner on the RESET current, using the melting current as a proxy

The lateral distributions of free carriers and defects in a channel of top gate In-Ga-Zn-O thin-film transistors were extracted using a single pulse charge pumping method. A square pulse was applied to the gate, while the charge transport current was monitored at the source–drain. A transmission line model was used to confirm the charging mechanism and extract the effective charge length. The time

In current work, InCaO x thin films with different Ca-doping concentrations were prepared via solution-processed method. A systematic investigation was conducted to reveal the variation in the physical properties of InCaO x thin films as a function of Ca-doping concentration by using various characteristic measurements. Results not only demonstrate that Ca-doping can change the optical properties,

This study uses mist atmospheric pressure chemical vapor deposition with deposition/annealing cyclic method to grow ${c}$ -axis aligned crystalline (CAAC) InGaZnO. The material characteristics of the CAAC-InGaZnO are analyzed by X-ray diffraction, X-ray photoelectron spectroscopy, photoluminescence, and an ellipsometer to determine the crystal structure, oxygen deficiency, trap energy level, and energy

Amorphous indium gallium zinc oxide (IGZO) deposited by plasma-enhanced atomic layer deposition (PEALD) thin-film transistors (TFTs) was fabricated using SiO 2 gate insulators synthesized via plasma-enhanced chemical vapor deposition (PECVD, device A) or PEALD (device B). The electrical performance of B devices was higher than that of device A. The mobilities of A and B devices were 19.39 and 21.11

Fabrication of zinc oxide (ZnO)-based p-n homojunction by depositing undoped p-ZnO nanoparticles (NPs) over electrodeposited n-ZnO hexagonal nanotube (NT) array is reported. Field emission scanning electron microscopy (FESEM) confirmed the formation of homojunction, while X-ray diffraction authenticated the crystallinity of the homojunction and its constituents. The conductivity type of the n- and

In this article, the effects of two-step annealing at the active layer (AL) and the completed device on the electrical properties and stability of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor (TFT) are studied. The subthreshold swing (SS) and stability of a-IGZO TFT devices are greatly improved, and the hump phenomenon under the negative bias illumination stability (NIBS) is particularly well

The effectiveness of a range of alternative high- ${k}$ dielectric layers as potential passivation layers for InAs avalanche photodiodes has been investigated. The suppression of surface leakage currents is investigated by analyzing the current–voltage performance of differently sized mesa diodes passivated with each oxide layer. Three potential passivation layers, such as ZnO, Al 2 O 3 , and MgO,

Photograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO 2 /ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location

We demonstrate the influence of surface terminated V-pits in tuning dark current and spectral responsivity of Al 0.25 Ga 0.75 N-based UV-B photodetectors with metal–semiconductor–metal geometry on Si (111) substrate. We show that the V-pit morphological defects contribute to a large internal gain in these photodetectors, thereby leading to a substantial enhancement in external quantum efficiency (EQE)

Laser-driven white lighting has been considered as a next-generation high-brightness white lighting source. Thermally stable color converter is an essential down-conversion material for phosphor-converted white laser diodes (pc-wLDs), which inevitably endures high-density laser excitation and huge heat shock from conversion loss. In this work, we proposed a thermally self-managing phosphor-in-glass

Silicon-based organic light-emitting diode (OLED) microdisplays are widely used in the head-mounted devices. This article proposes a novel atomized scan method for the digital driving silicon-based OLED microdisplays. By eliminating the time redundancy in the digital driving, the proposed method generates the high transmission efficiency, high lighting efficiency, high grayscale efficiency, and good

This article reports a solution-processed pentacene/Al Schottky photodiode for ultraviolet (UV) detection. A low-cost dispersion method is used to fabricate the pentacene film on ITO substrates. The surface morphology, crystalline properties, electrical, and optical properties of the pentacene film have been investigated in detail by X-ray diffraction (XRD), AFM, SEM, UV-visible (Vis), and Hall measurements

Inverted, top-illuminated flexible organic photodetectors (OPDs) are demonstrated using solution-processed hole extraction layer (HEL) at room temperature and semitransparent electrodes. The simplified fabrication process OPD yields a low dark current density of 80.9 nA/cm 2 at −5 V and a high sensitivity, as confirmed by a record high photo-to-dark-current ratio in excess of 7 $\times$ 10 3 in the

The solar photovoltaic (PV) array generates the power below the rated value due to the shading intensity and shading pattern losses under partial shading conditions (PSCs). The different levels of solar irradiance are received by the modules of PV array under PSCs; it causes the mismatch between the generated module currents, leading unfortunate impacts such as hot-spot and therefore total PV power

Single-crystal perovskite with no grain boundaries improves the performance of perovskite solar cell compared with its polycrystalline counterpart. Owing to its stability and excellent defect physics, it has enormous potential in the field of photovoltaics. In this article, a comprehensive numerical evaluation of single-crystal CH 3 NH 3 PbI 3 solar cell model with an unprecedented n-i-p-type architecture

In this study, unique short-circuit failure mechanisms in 1.2-kV SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) at 400 and 800-V dc bias were investigated using experiments and numerical TCAD simulations, taking electrical, thermal, and mechanical stress into account. It was found that the fracture of the interlayer dielectric, caused by high mechanical stress due to different thermal

A dual-gate superjunction insulated gate bipolar transistor (IGBT) (DG-SJ-IGBT) is proposed and studied with numerical TCAD simulations. The new structure utilizes the superjunction structure as a controlling port for the strength of conductivity modulation inside the IGBT, so that a low ${V}_{\text {ON}}$ is obtained by a strong conductivity modulation during ON-state and a near-unipolar turn-off

In this article, a method of single-event burnout (SEB) hardening at high linear energy transfer (LET) value range is proposed and investigated by the 2-D numerical simulations. The improved MOSFET using this method and the conventional MOSFET are analyzed and compared to evaluate the effectiveness of this method. Simulation results show that, compared with the conventional MOSFET, the improved MOSFET