Abstract not available

Abstract not available

Nanophotonic devices, such as metasurfaces and silicon photonic components, have been progressively demonstrated to be efficient and versatile alternatives to their bulky counterparts, enabling compact and light-weight systems for the application of imaging, sensing, communication and computing. The tremendous advances in machine learning provide new design methods, metrology and functionalities for

We propose metasurface holograms as a novel platform to generate optical trap arrays for cold atoms with high quality, efficiency, and thermal stability. We developed design and fabrication methods to create dielectric, phase-only metasurface holograms based on titanium dioxide. We experimentally demonstrated optical trap arrays of various geometries, including periodic and aperiodic configurations

Abstract not available

Orbital angular momentum (OAM) of light is an important feature of structured electromagnetic fields exhibiting non-uniform spatial distribution. In contrast to a spin angular momentum (SAM) reflecting angular rotation of a polarization vector, OAM is the quantity that expresses the amount of dynamical rotation of a wavefront about an optical axis. In 1992 it was demonstrated that such rotation can

Abstract not available

Abstract not available

Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the generation of picosecond and femtosecond pulses and/or broad frequency combs. They provide direct electrical control and footprints down to few millimeters. Their broad gain bandwidths (up to 50 nm for ground to ground state transitions as discussed below, with potential for increase to more than >200 nm

In recent years, Gallium Nitride (GaN) has been established as a material of choice for high power switching, high power RF and lighting applications. In c-direction, depending on the surface termination III-nitrides have either a group III element (Al, In, Ga) polarity or a N-polarity. Currently, commercially available GaN-based electronic and optoelectronic devices are fabricated predominantly on

Abstract not available

Brillouin dynamic gratings (BDGs) in optical fibers have been developed for more than a decade and gained considerable interests in different photonics fields. Based on its features of flexibility and all-optical generation, BDG has been explored for many applications including distributed optical fiber sensing (temperature, strain, transverse pressure, hydrostatic pressure, and salinity), all-optical

Optical frequency comb, with precisely controlled spectral lines spanning a broad range, has been the key enabling technology for many scientific breakthroughs. In addition to the traditional implementation based on mode-locked lasers, photonic frequency microcombs based on dissipative Kerr and quadratic cavity solitons in high-Q microresonators have become invaluable in applications requiring compact

Recently, thanks to their unique and attractive properties, such as tunable bandgap, high absorption coefficient, and long charge carrier diffusion length, metal halide perovskites have been recognized as one of the emerging candidates for next-generation optoelectronic devices. Optoelectronic devices based on perovskites have achieved significant breakthroughs in a relatively short period of time

To manipulate the electrical and optical properties of ultrathin two-dimensional (2D) layered materials, many approaches including the engineering of strain, doping, defects, and chemical absorption have been developed in recent years. However, the researches on crested substrates, which cause strains and emerging functionalities from the rigid substrate are limited. It shows great potential in improving

Abstract not available

This paper reviews the progress that has been made in our knowledge of quantum correlations at the mesoscopic and macroscopic level. We begin by summarizing the Einstein-Podolsky-Rosen (EPR) argument and the Bell correlations that cannot be explained by local hidden variable theories. It was originally an open question as to whether (and how) such quantum correlations could occur on a macroscopic scale

The magneto-optical effect (Faraday effect) was discovered in the middle of the 19th century. In the latter half of the 20th century, the practical use of isolators using single crystals (Faraday rotators) using the melt growth method began. One century after Faraday's discovery of the magneto-optic effect, R.L. Coble proved translucency of polycrystalline ceramics. Ceramics may have many scattering

Abstract not available

Abstract not available

Pronounced polarization anisotropy in semiconductor nanowires has been exploited to achieve polarization-sensitive devices operating across the electromagnetic spectrum, from the ultraviolet to the terahertz band. This contribution describes the physical origins of optical and electrical anisotropy in nanowires. Polarization anisotropy arising from dielectric contrast, and the behaviour of (nano)wire

The ability to manipulate light at the level of single photons, its elementary excitation quanta, has recently made it possible to produce a rich variety of tailor-made quantum states and arbitrary quantum operations, of high interest for fundamental science and applications. Here we present a concise review of the progress made over the last few decades in the engineering of quantum light states.

The outstanding properties of wide and flexibly tunable emission range, high color saturation, and cost-effectiveness make quantum dots (QDs) promising candidates in display field. However, the vast majority of QDs used in high-performance display devices contain toxic elements such as cadmium (Cd) or lead (Pb). In recent years, with increasing attention to physical health and ecological environment

Abstract not available

Visible lasers are sought for in a variety of applications. They are required in fields as diverse as medicine, materials processing, display and entertainment technology and many others. Moreover, in contrast to infrared lasers, they enable very simple and efficient access to the UV spectral range by a single frequency doubling step. Currently, the choice of direct visibly emitting lasers is limited:

Abstract not available

Semiconductor nanowire lasers are single-element structures that can act as both gain material and cavity for optical lasing. They have typical dimensions on the order of an optical wavelength in diameter and several micrometres in length, presenting unique challenges for testing and characterisation. Optical microscopy and spectroscopy are powerful tools used to study nanowire lasers; here, we review

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic, optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including nanowires, monolayer heterostructures, and quantum dots. Their emerging applications in ultraviolet, visible and infrared photonics, quantum optoelectronics, and artificial photosynthesis that are relevant for

Semiconductor lasers are ubiquitous in modern science and technology for they are compact, fast, and efficient. They require relatively low power and thus are well suited for applications in the information technology. However, in conventional semiconductor lasers, the power required to reach the lasing threshold has a fundamental lower bound determined by the carrier density required to reach population

The research on optical wireless communication (OWC) has been going on for more than two decades. Particularly, visible light communication (VLC), as a means of OWC combining communication with illumination, has been regarded as a promising indoor high-speed wireless approach for short-distance access. Recently, lightwave, millimeter-wave (mmWave), terahertz (THz) and other spectrum mediums are considered

Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 ​eV of GaN, such as aluminium gallium nitride

Quantum non-Gaussian states of photons and phonons are conclusive and direct witnesses of higher-than-quadratic nonlinearities in optical and mechanical processes. Moreover, they are proven resources for quantum sensing, communication and error correction with diverse continuous-variable systems. This review introduces theoretical analyses of nonclassical and quantum non-Gaussian states of photons

The epitaxial growth of semiconductor materials in nanowire geometries is enabling a new class of compact, micron scale optoelectronic devices. The deterministic selection and integration of single nanowire devices, from large growth populations, is required with high spatial accuracy and yield to enable their integration with on-chip systems. In this review we highlight the main methods by which single

Over the past few decades, optoelectronic devices have played a key role in human life and modern technology. To meet the development trends of the industry, photonics with tunable functions have emerged as building blocks with immense potential in controlling light–matter interactions, sensors, and integrated photonics. Compared with artificially designed materials and physical approaches, stimuli-responsive

The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the most promising radiation sources in the THz region owing to its high output power and broad frequency coverage from ∼1.3 to ∼5.4 ​THz and sub-terahertz, without and with assistance of external strong magnetic field. The operation of THz QCLs, however, has thus far been limited to applications below room temperature

We present a review on the photoionization bands that can be found in the far ultraviolet part of the spectrum using all sapphire cells in absorption experiments with hot alkali vapor. We describe cesium and rubidium dimers which have very pronounced photoionization bands together with bialkali mixtures like KCs and RbCs. We explain the origin of these peculiar bands as special molecular transitions

The measurement of optical ultrafast laser pulses is done indirectly because the required bandwidth to measure these pulses exceeds the bandwidth of current electronics. As a result, this measurement problem is often posed as a 1-D phase retrieval problem, which is fraught with ambiguities. The phase retrieval method known as ptychography solves this problem by making it possible to measure ultrafast

The concept of tunneling injection was introduced in the 1990’s to improve the dynamical properties of semiconductor lasers by avoiding the problem of hot carrier injection which increase the gain nonlinearity and hence limit the modulation capabilities. Indeed, tunneling injection led to record modulation speeds in quantum well lasers. Employing tunneling injection in quantum dot lasers is significantly

Photonic spin and orbital angular momenta, which are determined by the polarization and spatial degrees of freedom of photons, are strongly coupled with each other in subwavelength structured metasurfaces. The photonic spin-orbit interaction (PSOI) results in the splitting of the degenerated system states. In this review, we focus on the principles of symmetric PSOI associated with the conjugated geometric

Since the seminal work by J. H. Poynting, light has been known to carry momentum and angular momentum. The typical dynamical features of light and its interactions—termed spin–orbit interactions (SOIs), which have been investigated intensely over the last 30 years—play a crucial role in various light-matter interactions, for example: spin Hall effect, spin–orbit conversion, helicity-controlled unidirectional

Random Lasers (RLs) and Random Fiber Lasers (RFLs) have been the subject of intense research since their first experimental demonstration in 1994 and 2007, respectively. These low coherence light sources rely on multiple scattering of light to provide optical feedback in a medium combining a properly excited gain material and a scattering disordered structure. It is the feedback mechanism which makes

Mid-infrared region (2–20 ​μm) is an important region of electromagnetic spectrum. Most of the molecules including CH4, CO, NO, NO2, C6H6, TNT, NH3, SF6, HNO3, greenhouse gas radiation etc. have their fundamental vibrations in this domain. Thus, the mid-infrared region is known as ‘molecular fingerprint region’ and desirable to get the signature of these molecules. Tellurite and chalcogenide glasses

III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN homoepitaxy on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates

Integration of embedded dielectric structures with crystalline III-V materials has generated significant interest, due to a host of important applications and material improvements that are central to high performance optoelectronic devices. The core challenge is the production of high-quality crystalline layers grown above embedded dielectric materials, requiring the growth processes of both lateral

Improving the energy efficiency of electronics is one of the grand challenges of semiconductor device physics, as global energy consumption by electronics grows in tandem with society’s growing reliance on information technology. Computationally intensive applications such as artificial intelligence further incentivizes the improvement of energy efficiency of electronics. At the corpuscular level of

The paper is a review of gas lasers pumped by runaway electrons preionized diffuse discharge (REP DD). The various conditions under which the discharge occurs are described. It is shown that in the presence of the highly non-uniform electric field strength distribution in a gap filled with dense gases, a stable diffuse discharge is ignited without the use of additional sources of ionizing radiation

Abstract III-V semiconductor materials are the basis of photonic devices due to their unique optical properties. There is an increasing demand for fabricating these devices on unconventional substrates for various applications, such as silicon photonic integrated circuits, flexible optoelectronic devices, and ultralow-profile photonics. However, the III-V semiconductor epitaxy often encounters problems

Abstract Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is

Abstract We present a review of selective area epitaxy and its history in the evolution of semiconductor lasers, with a focus on its application at the nanoscale level in the development of quantum dot and nanopore lasers. Recent applications will be discussed including applications to integrated photonics and quantum photonics, such as patterned single-photon sources.

Abstract As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce

Abstract With the advent of the Internet of Things, energy- and bandwidth-related issues are becoming increasingly prominent in the context of supporting the massive connectivity of various smart devices. To this end, we propose that solar cells with the dual functions of energy harvesting and signal acquisition are critical for alleviating energy-related issues and enabling optical wireless communication

Abstract The ultrafast, reversible, nonvolatile and multistimuli responsive phase change of Ge-Sb-Te (GST) alloy makes it an interesting “smart” material. The optical features of GST undergo significant variation when its state changes between amorphous and crystalline, meaning that they are useful for tuning photonic components. A GST phase change material (PCM) can be efficiently triggered by stimuli

Abstract Lasers based on erbium ions using 4I11/2 ​→ ​4I13/2 transition can generate laser radiation in the spectral range from 2.7 ​μm to 3 ​μm. Since the strong absorption peak of water is located at 3 ​μm, there has been an effort to develop a suitable laser source for various medical applications, e.g. dentistry, dermatology, urology, or surgery. Laser radiation from this wavelength range can also

King Abdullah University of Science and Technology(KAUST) baseline funding, BAS/1/1614-01-01.

Abstract Biosensor technology is a quite attractive and rapidly developing research field in recent years, and the sub field of optical photonic crystal (PC) biosensor based on label free sensing technology has also made great progress in this period. This review mainly concentrates on advances in the label free refractometric sensing based two dimensional (2D) PC slab biosensors particularly in the

Abstract Underwater wireless optical communication (UWOC) is an emerging and feasible underwater communication technology and has developed rapidly in recent years. Building a high-performance and practical UWOC system requires comprehensive consideration and optimization design from the device to the system, as well as from the internal modulation to the external environment. This paper provides an