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Software-defined nanophotonic devices and systems empowered by machine learning Prog. Quant. Electron. (IF 11.7) Pub Date : 2023-04-04 Yihao Xu, Bo Xiong, Wei Ma, Yongmin Liu
Nanophotonic devices, such as metasurfaces and silicon photonic components, have been progressively demonstrated to be efficient and versatile alternatives to their bulky counterparts, enabling compact and light-weight systems for the application of imaging, sensing, communication and computing. The tremendous advances in machine learning provide new design methods, metrology and functionalities for
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Metasurface holographic optical traps for ultracold atoms Prog. Quant. Electron. (IF 11.7) Pub Date : 2023-04-03 Xiaoyan Huang, Weijun Yuan, Aaron Holman, Minho Kwon, Stuart J. Masson, Ricardo Gutierrez-Jauregui, Ana Asenjo-Garcia, Sebastian Will, Nanfang Yu
We propose metasurface holograms as a novel platform to generate optical trap arrays for cold atoms with high quality, efficiency, and thermal stability. We developed design and fabrication methods to create dielectric, phase-only metasurface holograms based on titanium dioxide. We experimentally demonstrated optical trap arrays of various geometries, including periodic and aperiodic configurations
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Light–matter interaction empowered by orbital angular momentum: Control of matter at the micro- and nanoscale Prog. Quant. Electron. (IF 11.7) Pub Date : 2023-02-27 A. Porfirev, S. Khonina, A. Kuchmizhak
Orbital angular momentum (OAM) of light is an important feature of structured electromagnetic fields exhibiting non-uniform spatial distribution. In contrast to a spin angular momentum (SAM) reflecting angular rotation of a polarization vector, OAM is the quantity that expresses the amount of dynamical rotation of a wavefront about an optical axis. In 1992 it was demonstrated that such rotation can
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Corrigendum to “Crested 2D materials for optoelectronics and photonics” [Prog. Quant. Electron. 86 (2022) 100436] Prog. Quant. Electron. (IF 11.7) Pub Date : 2023-01-20 Siwei Luo, Gencai Guo, Xiang Qi, Weiyang Liu, Han Tang, Qiaoliang Bao, Jianxin Zhong
Abstract not available
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Edge emitting mode-locked quantum dot lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2023-01-05 Amit Yadav, Nikolai B. Chichkov, Eugene A. Avrutin, Andrei Gorodetsky, Edik U. Rafailov
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources for the generation of picosecond and femtosecond pulses and/or broad frequency combs. They provide direct electrical control and footprints down to few millimeters. Their broad gain bandwidths (up to 50 nm for ground to ground state transitions as discussed below, with potential for increase to more than >200 nm
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N-polar GaN: Epitaxy, properties, and device applications Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-12-22 Subhajit Mohanty, Kamruzzaman Khan, Elaheh Ahmadi
In recent years, Gallium Nitride (GaN) has been established as a material of choice for high power switching, high power RF and lighting applications. In c-direction, depending on the surface termination III-nitrides have either a group III element (Al, In, Ga) polarity or a N-polarity. Currently, commercially available GaN-based electronic and optoelectronic devices are fabricated predominantly on
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Advances in Brillouin dynamic grating in optical fibers and its applications Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-11-16 Hongying Zhang, Yongkang Dong
Brillouin dynamic gratings (BDGs) in optical fibers have been developed for more than a decade and gained considerable interests in different photonics fields. Based on its features of flexibility and all-optical generation, BDG has been explored for many applications including distributed optical fiber sensing (temperature, strain, transverse pressure, hydrostatic pressure, and salinity), all-optical
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Photonic frequency microcombs based on dissipative Kerr and quadratic cavity solitons Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-11-11 Mingming Nie, Yijun Xie, Bowen Li, Shu-Wei Huang
Optical frequency comb, with precisely controlled spectral lines spanning a broad range, has been the key enabling technology for many scientific breakthroughs. In addition to the traditional implementation based on mode-locked lasers, photonic frequency microcombs based on dissipative Kerr and quadratic cavity solitons in high-Q microresonators have become invaluable in applications requiring compact
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Defect engineering of metal halide perovskite optoelectronic devices Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-11-08 Xuanyu Zhang, Xiongbin Wang, Huan Liu, Rui Chen
Recently, thanks to their unique and attractive properties, such as tunable bandgap, high absorption coefficient, and long charge carrier diffusion length, metal halide perovskites have been recognized as one of the emerging candidates for next-generation optoelectronic devices. Optoelectronic devices based on perovskites have achieved significant breakthroughs in a relatively short period of time
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Crested 2D materials for optoelectronics and photonics Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-11-07 Siwei Luo, Gencai Guo, Xiang Qi, Weiyang Liu, Han Tang, Qiaoliang Bao, Jianxin Zhong
To manipulate the electrical and optical properties of ultrathin two-dimensional (2D) layered materials, many approaches including the engineering of strain, doping, defects, and chemical absorption have been developed in recent years. However, the researches on crested substrates, which cause strains and emerging functionalities from the rigid substrate are limited. It shows great potential in improving
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Mesoscopic and macroscopic quantum correlations in photonic, atomic and optomechanical systems Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-10-17 Run Yan Teh, Laura Rosales-Zarate, Peter D. Drummond, M.D. Reid
This paper reviews the progress that has been made in our knowledge of quantum correlations at the mesoscopic and macroscopic level. We begin by summarizing the Einstein-Podolsky-Rosen (EPR) argument and the Bell correlations that cannot be explained by local hidden variable theories. It was originally an open question as to whether (and how) such quantum correlations could occur on a macroscopic scale
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Progress of magneto-optical ceramics Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-10-03 A. Ikesue, Y.L. Aung, J. Wang
The magneto-optical effect (Faraday effect) was discovered in the middle of the 19th century. In the latter half of the 20th century, the practical use of isolators using single crystals (Faraday rotators) using the melt growth method began. One century after Faraday's discovery of the magneto-optic effect, R.L. Coble proved translucency of polycrystalline ceramics. Ceramics may have many scattering
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Special issue in honor of the 65th birthday of Professor Chennupati Jagadish, AC Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-09-08 Martin Dawson, Zetian Mi, Hoe Tan
Abstract not available
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Polarization anisotropy in nanowires: Fundamental concepts and progress towards terahertz-band polarization devices Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-09-06 Michael B. Johnston, Hannah J. Joyce
Pronounced polarization anisotropy in semiconductor nanowires has been exploited to achieve polarization-sensitive devices operating across the electromagnetic spectrum, from the ultraviolet to the terahertz band. This contribution describes the physical origins of optical and electrical anisotropy in nanowires. Polarization anisotropy arising from dielectric contrast, and the behaviour of (nano)wire
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Photon-by-photon quantum light state engineering Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-08-17 Nicola Biagi, Saverio Francesconi, Alessandro Zavatta, Marco Bellini
The ability to manipulate light at the level of single photons, its elementary excitation quanta, has recently made it possible to produce a rich variety of tailor-made quantum states and arbitrary quantum operations, of high interest for fundamental science and applications. Here we present a concise review of the progress made over the last few decades in the engineering of quantum light states.
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Recent advances of eco-friendly quantum dots light-emitting diodes for display Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-08-16 Gaoyu Liu, Shuai Zhang, Lili Xu, Yang Hu, Xiaoming Li, Shengli Zhang, Haibo Zeng
The outstanding properties of wide and flexibly tunable emission range, high color saturation, and cost-effectiveness make quantum dots (QDs) promising candidates in display field. However, the vast majority of QDs used in high-performance display devices contain toxic elements such as cadmium (Cd) or lead (Pb). In recent years, with increasing attention to physical health and ecological environment
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High-power multicore fiber laser systems Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-08-05 Arno Klenke, Cesar Jauregui, Albrecht Steinkopff, Christopher Aleshire, Jens Limpert
Abstract not available
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Visible solid-state lasers based on Pr3+ and Tb3+ Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-07-01 Hiroki Tanaka, Sascha Kalusniak, Moritz Badtke, Maxim Demesh, Nikolai V. Kuleshov, Fumihiko Kannari, Christian Kränkel
Visible lasers are sought for in a variety of applications. They are required in fields as diverse as medicine, materials processing, display and entertainment technology and many others. Moreover, in contrast to infrared lasers, they enable very simple and efficient access to the UV spectral range by a single frequency doubling step. Currently, the choice of direct visibly emitting lasers is limited:
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Optical characterisation of nanowire lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-06-16 Stephen A. Church, Ruqaiya Al-Abri, Patrick Parkinson, Dhruv Saxena
Semiconductor nanowire lasers are single-element structures that can act as both gain material and cavity for optical lasing. They have typical dimensions on the order of an optical wavelength in diameter and several micrometres in length, presenting unique challenges for testing and characterisation. Optical microscopy and spectroscopy are powerful tools used to study nanowire lasers; here, we review
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III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-06-07 Yuanpeng Wu, Xianhe Liu, Ayush Pandey, Peng Zhou, Wan Jae Dong, Ping Wang, Jungwook Min, Parag Deotare, Mackillo Kira, Emmanouil Kioupakis, Zetian Mi
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic, optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including nanowires, monolayer heterostructures, and quantum dots. Their emerging applications in ultraviolet, visible and infrared photonics, quantum optoelectronics, and artificial photosynthesis that are relevant for
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Recent developments on polariton lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-05-21 Long Zhang, Jiaqi Hu, Jinqi Wu, Rui Su, Zhanghai Chen, Qihua Xiong, Hui Deng
Semiconductor lasers are ubiquitous in modern science and technology for they are compact, fast, and efficient. They require relatively low power and thus are well suited for applications in the information technology. However, in conventional semiconductor lasers, the power required to reach the lasing threshold has a fundamental lower bound determined by the carrier density required to reach population
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Evolution of optical wireless communication for B5G/6G Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-05-12 Zixian Wei, Zhaoming Wang, Jianan Zhang, Qian Li, Junping Zhang, H.Y. Fu
The research on optical wireless communication (OWC) has been going on for more than two decades. Particularly, visible light communication (VLC), as a means of OWC combining communication with illumination, has been regarded as a promising indoor high-speed wireless approach for short-distance access. Recently, lightwave, millimeter-wave (mmWave), terahertz (THz) and other spectrum mediums are considered
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Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-05-10 Jialin Yang, Kewei Liu, Xing Chen, Dezhen Shen
Owing to their novel physical properties, semiconductors have penetrated almost every corner of the contemporary industrial system. Nowadays, semiconductor materials and their microelectronic and optoelectronic devices are widely used in civil and military fields. Recently, ultrawide-bandgap (UWBG) semiconductors with bandgaps considerably wider than 3.4 eV of GaN, such as aluminium gallium nitride
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Quantum non-Gaussianity of light and atoms Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-05-02 Lukáš Lachman, Radim Filip
Quantum non-Gaussian states of photons and phonons are conclusive and direct witnesses of higher-than-quadratic nonlinearities in optical and mechanical processes. Moreover, they are proven resources for quantum sensing, communication and error correction with diverse continuous-variable systems. This review introduces theoretical analyses of nonclassical and quantum non-Gaussian states of photons
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Deterministic integration of single nanowire devices with on-chip photonics and electronics Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-04-30 D. Jevtics, B. Guilhabert, A. Hurtado, M.D. Dawson, M.J. Strain
The epitaxial growth of semiconductor materials in nanowire geometries is enabling a new class of compact, micron scale optoelectronic devices. The deterministic selection and integration of single nanowire devices, from large growth populations, is required with high spatial accuracy and yield to enable their integration with on-chip systems. In this review we highlight the main methods by which single
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Advances in single crystals and thin films of chiral hybrid metal halides Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-01-11 Zhihang Guo, Junzi Li, Rui Chen, Tingchao He
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Special issue in honor of the 70th birthday of Professor J. Gary Eden Prog. Quant. Electron. (IF 11.7) Pub Date : 2022-01-01 Martin Dawson,D.B. Geohegan,T.M. Spinka,C. Jagadish
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Biological tunable photonics: Emerging optoelectronic applications manipulated by living biomaterials Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-09-18 Yifan Zhang, Ziyihui Wang, Yu-Cheng Chen
Over the past few decades, optoelectronic devices have played a key role in human life and modern technology. To meet the development trends of the industry, photonics with tunable functions have emerged as building blocks with immense potential in controlling light–matter interactions, sensors, and integrated photonics. Compared with artificially designed materials and physical approaches, stimuli-responsive
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High-temperature terahertz quantum cascade lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-10-05 Boyu Wen, Dayan Ban
The terahertz (THz) quantum cascade laser (QCL), first demonstrated in 2002, is among the most promising radiation sources in the THz region owing to its high output power and broad frequency coverage from ∼1.3 to ∼5.4 THz and sub-terahertz, without and with assistance of external strong magnetic field. The operation of THz QCLs, however, has thus far been limited to applications below room temperature
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Structured photoionization bands of alkali diatomic molecules Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-11-06 Goran Pichler
We present a review on the photoionization bands that can be found in the far ultraviolet part of the spectrum using all sapphire cells in absorption experiments with hot alkali vapor. We describe cesium and rubidium dimers which have very pronounced photoionization bands together with bialkali mixtures like KCs and RbCs. We explain the origin of these peculiar bands as special molecular transitions
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A review of ptychographic techniques for ultrashort pulse measurement Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-10-11 Daniel J. Kane, Andrei B. Vakhtin
The measurement of optical ultrafast laser pulses is done indirectly because the required bandwidth to measure these pulses exceeds the bandwidth of current electronics. As a result, this measurement problem is often posed as a 1-D phase retrieval problem, which is fraught with ambiguities. The phase retrieval method known as ptychography solves this problem by making it possible to measure ultrafast
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On the principle operation of tunneling injection quantum dot lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-09-21 Igor Khanonkin, Sven Bauer, Vissarion Mikhelashvili, Ori Eyal, Michael Lorke, Frank Jahnke, Johann Peter Reithmaier, Gadi Eisenstein
The concept of tunneling injection was introduced in the 1990’s to improve the dynamical properties of semiconductor lasers by avoiding the problem of hot carrier injection which increase the gain nonlinearity and hence limit the modulation capabilities. Indeed, tunneling injection led to record modulation speeds in quantum well lasers. Employing tunneling injection in quantum dot lasers is significantly
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Symmetric and asymmetric photonic spin-orbit interaction in metasurfaces Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-07-24 Xiangang Luo, Xiong Li, Mingbo Pu, Yinghui Guo, Fei Zhang, Xiaoliang Ma
Photonic spin and orbital angular momenta, which are determined by the polarization and spatial degrees of freedom of photons, are strongly coupled with each other in subwavelength structured metasurfaces. The photonic spin-orbit interaction (PSOI) results in the splitting of the degenerated system states. In this review, we focus on the principles of symmetric PSOI associated with the conjugated geometric
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Optical near-field measurement for spin-orbit interaction of light Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-06-15 Peng Shi, Aiping Yang, Fanfei Meng, Jiashuo Chen, Yuquan Zhang, Zhenwei Xie, Luping Du, Xiaocong Yuan
Since the seminal work by J. H. Poynting, light has been known to carry momentum and angular momentum. The typical dynamical features of light and its interactions—termed spin–orbit interactions (SOIs), which have been investigated intensely over the last 30 years—play a crucial role in various light-matter interactions, for example: spin Hall effect, spin–orbit conversion, helicity-controlled unidirectional
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Recent advances and applications of random lasers and random fiber lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-07-14 Anderson S.L. Gomes, André L. Moura, Cid B. de Araújo, Ernesto P. Raposo
Random Lasers (RLs) and Random Fiber Lasers (RFLs) have been the subject of intense research since their first experimental demonstration in 1994 and 2007, respectively. These low coherence light sources rely on multiple scattering of light to provide optical feedback in a medium combining a properly excited gain material and a scattering disordered structure. It is the feedback mechanism which makes
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Mid-infrared supercontinuum generation in soft-glass specialty optical fibers: A review Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-06-19 Than Singh Saini, Ravindra Kumar Sinha
Mid-infrared region (2–20 μm) is an important region of electromagnetic spectrum. Most of the molecules including CH4, CO, NO, NO2, C6H6, TNT, NH3, SF6, HNO3, greenhouse gas radiation etc. have their fundamental vibrations in this domain. Thus, the mid-infrared region is known as ‘molecular fingerprint region’ and desirable to get the signature of these molecules. Tellurite and chalcogenide glasses
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III-nitride semiconductor lasers grown on Si Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-03-02 Meixin Feng, Jianxun Liu, Qian Sun, Hui Yang
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further expand their applications. Therefore, III-nitride lasers grown on Si have been pursued for about two decades. Different from GaN homoepitaxy on free-standing GaN substrates, III-nitride semiconductors grown on Si substrates
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Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics Prog. Quant. Electron. (IF 11.7) Pub Date : 2021-02-20 Daniel J. Ironside, Alec M. Skipper, Ashlee M. García, Seth R. Bank
Integration of embedded dielectric structures with crystalline III-V materials has generated significant interest, due to a host of important applications and material improvements that are central to high performance optoelectronic devices. The core challenge is the production of high-quality crystalline layers grown above embedded dielectric materials, requiring the growth processes of both lateral
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Suspended graphene electromechanical switches for energy efficient electronics Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-12-30 Thomas Szkopek, Eli Martel
Improving the energy efficiency of electronics is one of the grand challenges of semiconductor device physics, as global energy consumption by electronics grows in tandem with society’s growing reliance on information technology. Computationally intensive applications such as artificial intelligence further incentivizes the improvement of energy efficiency of electronics. At the corpuscular level of
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Gas lasers pumped by runaway electrons preionized diffuse discharge Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-12-21 Alexei N. Panchenko, Dmitry A. Sorokin, Victor F. Tarasenko
The paper is a review of gas lasers pumped by runaway electrons preionized diffuse discharge (REP DD). The various conditions under which the discharge occurs are described. It is shown that in the presence of the highly non-uniform electric field strength distribution in a gap filled with dense gases, a stable diffuse discharge is ignited without the use of additional sources of ionizing radiation
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Novel III-V Semiconductor Epitaxy for Optoelectronic Devices through Two-Dimensional Materials Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-12-01 Chao Zhao, Zhaonan Li, Tianyi Tang, Jiaqian Sun, Wenkang Zhan, Bo Xu, Huajun Sun, Hui Jiang, Kong Liu, Shengchun Qu, Zhijie Wang, Zhanguo Wang
Abstract III-V semiconductor materials are the basis of photonic devices due to their unique optical properties. There is an increasing demand for fabricating these devices on unconventional substrates for various applications, such as silicon photonic integrated circuits, flexible optoelectronic devices, and ultralow-profile photonics. However, the III-V semiconductor epitaxy often encounters problems
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Strained-layer quantum well materials grown by MOCVD for diode laser application Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 Luke J. Mawst,Honghyuk Kim,Gary Smith,Wei Sun,Nelson Tansu
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Special issue in honor of the 70th birthday of Professor James J. Coleman Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 Xiuling Li,Catrina Coleman,Weidong Zhou
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Selective Area Epitaxy By Metalorganic Chemical Vapor Deposition– A Tool For Photonic And Novel Nanostructure Integration Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 P. Daniel Dapkus, Chun Yung Chi, Sang Jun Choi, Hyung Joon Chu, Mitchell Dreiske, Rijuan Li, Yenting Lin, Yoshitake Nakajima, Dawei Ren, Ryan Stevenson, Maoqing Yao, Ting Wei Yeh, Hanmin Zhao
Abstract Selective area epitaxial (SAE) growth of III-V materials and devices by metalorganic chemical vapor deposition is selectively reviewed to illustrate the concepts employed in this technology and its most relevant applications. Special focus on the use of SAE use for photonic integration, heterogeneous integration of materials relevant to photonic integration, and nanostructure integration is
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Nanoscale Selective Area Epitaxy: From Semiconductor Lasers to Single-Photon Sources Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 V.B. Verma, V.C. Elarde
Abstract We present a review of selective area epitaxy and its history in the evolution of semiconductor lasers, with a focus on its application at the nanoscale level in the development of quantum dot and nanopore lasers. Recent applications will be discussed including applications to integrated photonics and quantum photonics, such as patterned single-photon sources.
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Hexagonal boron nitride: Epitaxial growth and device applications Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 A. Maity, S.J. Grenadier, J. Li, J.Y. Lin, H.X. Jiang
Abstract As a newest family member of the III-nitrides, BN is considered amongst the remaining frontiers in wide energy bandgap semiconductors with potentials for technologically significant applications in deep UV (DUV) optoelectronics, solid-state neutron detectors, electron emitters, single photon emitters, switching/memory devices, and super-capacitors. It was shown that it is possible to produce
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Survey of energy-autonomous solar cell receivers for satellite–air–ground–ocean optical wireless communication Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 Meiwei Kong, Chun Hong Kang, Omar Alkhazragi, Xiaobin Sun, Yujian Guo, Mohammed Sait, Jorge A. Holguin-Lerma, Tien Khee Ng, Boon S. Ooi
Abstract With the advent of the Internet of Things, energy- and bandwidth-related issues are becoming increasingly prominent in the context of supporting the massive connectivity of various smart devices. To this end, we propose that solar cells with the dual functions of energy harvesting and signal acquisition are critical for alleviating energy-related issues and enabling optical wireless communication
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Photonic Ge-Sb-Te phase change metamaterials and their applications Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 Tun Cao, Rongzi Wang, Robert E. Simpson, Guixin Li
Abstract The ultrafast, reversible, nonvolatile and multistimuli responsive phase change of Ge-Sb-Te (GST) alloy makes it an interesting “smart” material. The optical features of GST undergo significant variation when its state changes between amorphous and crystalline, meaning that they are useful for tuning photonic components. A GST phase change material (PCM) can be efficiently triggered by stimuli
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Er-doped crystalline active media for ∼ 3 μ m diode-pumped lasers Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-11-01 Richard Švejkar, Jan Šulc, Helena Jelínková
Abstract Lasers based on erbium ions using 4I11/2 → 4I13/2 transition can generate laser radiation in the spectral range from 2.7 μm to 3 μm. Since the strong absorption peak of water is located at 3 μm, there has been an effort to develop a suitable laser source for various medical applications, e.g. dentistry, dermatology, urology, or surgery. Laser radiation from this wavelength range can also
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Underwater wireless optical communications: opportunity, challenges and future prospects Commentary on “Recent progress in and perspectives of underwater wireless optical communication” Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-09-01 Boon S. Ooi, Meiwei Kong, Tien Khee Ng
King Abdullah University of Science and Technology(KAUST) baseline funding, BAS/1/1614-01-01.
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Two Dimensional Photonic Crystal Slab Biosensors Using Label Free Refractometric Sensing Schemes: A Review Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-09-01 Qing Shi, Jianlong Zhao, Lijuan Liang
Abstract Biosensor technology is a quite attractive and rapidly developing research field in recent years, and the sub field of optical photonic crystal (PC) biosensor based on label free sensing technology has also made great progress in this period. This review mainly concentrates on advances in the label free refractometric sensing based two dimensional (2D) PC slab biosensors particularly in the
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Recent Progress in and Perspectives of Underwater Wireless Optical Communication Prog. Quant. Electron. (IF 11.7) Pub Date : 2020-09-01 Shijie Zhu, Xinwei Chen, Xiaoyan Liu, Guoqi Zhang, Pengfei Tian
Abstract Underwater wireless optical communication (UWOC) is an emerging and feasible underwater communication technology and has developed rapidly in recent years. Building a high-performance and practical UWOC system requires comprehensive consideration and optimization design from the device to the system, as well as from the internal modulation to the external environment. This paper provides an