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Origins and characterization techniques of stress in SiC crystals: A review Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2024-02-24 Jiaqi Tian, Xuejian Xie, Laibin Zhao, Xinglong Wang, Xiufang Chen, Xianglong Yang, Yan Peng, Xiaomeng Li, Xiaobo Hu, Xiangang Xu
Silicon carbide (SiC) is a promising semiconductor material which attracts huge attention due to its wide bandgap, high thermal conductivity and great potential for electronic applications. Residual stress causes defects in crystals that can noticeably decrease the performance of SiC devices. This paper reviews the origins of residual stress and different methods for stress characterization. To begin
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The formation and stability of 3D and 2D materials Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2024-01-11 Mona Layegh, Peng Yan, Joseph W. Bennett
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Structural transformations and characterisation in nano-engineered alloys Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-11-26 Soham Mukherjee, Joysurya Basu, Rajiv Kumar Mandal
Structural transformations in the solid state dictate operating regimes of materials for engineering applications. Advanced structural characterisation facilitated by electron microscopy has resulted in significant progress in our understanding of structural transformations across resolvable length scales. We shall confine this communication to one of the metallic systems. This refers to titanium (Ti)
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Advances of interface, flow, and stress control for VB crystal growth: An overview Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-11-09 Yufeng Shi, Pengfei Wang, Honghe Mu, Huamin Kou, Anhua Wu, Liangbi Su
The Vertical Bridgman (VB) method plays a vital role in growing crystals of Group II-VI semiconductors, oxides, and fluorides. However, achieving large-scale crystals with high quality remains challenging due to the complexities of heat-mass transfer and phase change phenomena involved in the process. To enhance the understanding and control of the VB crystal growth, this paper reviews previous numerical
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On the multifaceted journey for the invention of epitaxial quantum dots Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-10-19 Emanuele Pelucchi
Epitaxial semiconductor quantum dots have been, in the last 40 years or so, at the center of the research effort of a large community. The focus being on “semiconductor physics and devices”, in view of the broad applications and potential, e.g., for efficient temperature insensitive lasers at telecom wavelengths, or as “artificial atoms” for quantum information processing. Our manuscript aims at addressing
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Preparation, growth mechanism, and application of Mg2B2O5 whiskers: A review Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-09-20 Zhaoyang Liu, Shuxing Wang, Songyang Pan, Kexin Cheng, Ruinan Zhang, Xiangnan Wang, Tianpeng Wen, Lei Yuan, Jingkun Yu
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Chronological evaluation of the synthesis techniques of nanocrystalline Fe73.5Cu1Nb3Si13.5B9 soft magnetic alloy Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-09-20 Mohammad Nur-E-Alam, Arvil Bhattacharjee, Deba Prasad Paul, M.A. Hakim, Mohammad Aminul Islam, Tiong S. Kiong, Nowshad Amin, Mohammad Rashed Iqbal Faruque, Mayeen Uddin Khandaker
In this review article, we focus on the synthesis process and properties of Fe-Si-B-based soft magnetic alloys that exhibit superior magnetic properties. The process parameters related to the synthesis and characterization of these types of alloys are studied widely and investigated the properties observed in nanocrystalline Cu and Nb-dopped Fe-Si-B-based magnetic alloys. The properties of these materials
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Editorial Board Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-07-27
Abstract not available
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Silica-carbonate biomorphs of alkaline earth metals: Relationship with minerals since the Precambrian era Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2023-06-29 Marcelino Antonio Zúñiga-Estrada, Erick Alfredo Zúñiga-Estrada, Mayra Cuéllar-Cruz
Under alkaline conditions, silica forms self-assembled mineral compounds which are similar in morphology, nanostructure, and texture to the hybrid biomineral structures that, millions of years ago gave to life. In this review we propose that, during the earliest history of this planet, there was a geochemical scenario that led to large-scale production of both simple and complex organic compounds,
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Editorial Board Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-11-24
Abstract not available
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Macrosteps dynamics and the growth of crystals and epitaxial layers Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-09-06 Stanislaw Krukowski, Konrad Sakowski, Paweł Strak, Paweł Kempisty, Jacek Piechota, Izabella Grzegory
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetics models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and therefore could not be used to elucidate macrostep creation during growth. A scenario of the instability, leading go macrostep creation, was based on the dynamics of the
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Advances on potential-driven growth of metal crystals from ionic liquids Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-07-22 Md. Mominul Islam, Saika Ahmed, Muhammed Shah Miran, Md. Abu Bin Hasan Susan
This article highlights the electrodeposition of metals, in crystalline or amorphous form, that are monentous in the present era of science and technology. Available literature related to nucleation and growth of metal crystals has been reviewed to gain insight into the mechanism and kinetics. The progress made in the electrodeposition technique, using an ionic liquid (IL) medium, has been detailed
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Thermal stress relaxation phenomenon through forming the interstitial region in CZ silicon pulled with rapid and slow cooling heat shields Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-07-11 Takao Abe
This review article aims to clarify a mechanism of point defects formation in a CZ Si crystal through an experimental arrangement using the two kinds of heat shields with different slow-pulling periods. Point defects in a melt grown silicon crystal have been studied for a long time. The author and his co-researchers have reported about “Mechanism for generating interstitial atoms by thermal stress
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Growth, structure, electrical and optical properties of transition metal chalcogenide crystals synthesized by improved chemical vapor transport technique for semiconductor technologies Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-07-01 Abhay Dasadia, Vidhi Bhavsar
Low dimensional structures, including bulk crystals, thin films, nanowires and nanotubes, have received remarkable attention due to their novel functionality and potential applications in various areas of optics, electronics, photonics, and sensing devices and photovoltaic field. Recently, remarkable progress and modification have been achieved in the synthesis process of crystalline material by vapor
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Theoretical and Practical Studies on Effects of External Electrostatic Electric Field on Nucleation and Growth Kinetics of Protein Crystals Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-06-07 Haruhiko Koizumi, Satoshi Uda
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Editorial Board Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-05-29
Abstract not available
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On the Vitality of the Classical Theory of Crystal Nucleation; Crystal Nucleation in Pure Own Melt; Atmospheric Ice and Snow; Ice in Frozen Foods Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-04-28 Christo N. Nanev
The main reason for the longevity of the Classical Nucleation Theory (CNT) is its firm thermodynamic basis; reviewing the discussion about the molecular-scale mechanism of crystal nucleation from solutions, and especially the mechanism of protein crystal nucleation, we note that the diverse nucleation pathways across the metastable phase cannot contradict the thermodynamic conclusions of the CNT. In
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A short overview on practical techniques for protein crystallization and a new approach using low intensity electromagnetic fields Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-02-10 Camila Campos-Escamilla, Luis A. Gonzalez-Rámirez, Fermín Otálora, José Antonio Gavira, Abel Moreno
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The formation of crystalline minerals and their role in the origin of life on Earth Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2022-02-08 Cesia D. Pérez-Aguilar, Mayra Cuéllar-Cruz
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In-situ optical microscopy observation of elementary steps on ice crystals grown in vapor and their growth kinetics Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-10-14 Gen Sazaki, Masahiro Inomata, Harutoshi Asakawa, Etsuro Yokoyama, Shunichi Nakatsubo, Ken-ichiro Murata, Ken Nagashima, Yoshinori Furukawa
Ice is one of the most abundant materials on the earth's surface, and its growth governs various natural phenomena. Hence, the molecular-level understanding of ice crystal surfaces is crucially important. However, it is generally acknowledged that the molecular-level observation of ice crystal surfaces by ordinary microscopy techniques, such as atomic force microscopy and scanning electron microscopy
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CdTe-based crystals with Mg, Se, or Mn as materials for X and gamma ray detectors: Selected physical properties Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-08-14 Andrzej Mycielski, Aneta Wardak, Dominika Kochanowska, Marta Witkowska-Baran, Michał Szot, Rafał Jakieła, Jarosław Z. Domagała, Leszek Kowalczyk, Michał Kochański, Gabriela Janusz, Marcin Dopierała, Adam Marciniak, Barbara Witkowska, Bartłomiej S. Witkowski, Anna Reszka, Andrei Avdonin, Elżbieta Łusakowska, Witold Chromiński, Małgorzata Górska
In recent years, a series of investigations has been devoted to a possibility of using crystals based on CdTe with addition of magnesium (Mg), selenium (Se), or manganese (Mn) for X and gamma radiation detectors. In the literature there are contradictory data with respect to the segregation of Mg in (Cd,Mg)Te and Se in Cd(Te,Se) and to the possibility of obtaining materials with a homogeneous composition
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Sapphire waveguides and fibers for terahertz applications Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-08-01 G.M. Katyba,K.I. Zaytsev,I.N. Dolganova,N.V. Chernomyrdin,V.E. Ulitko,S.N. Rossolenko,I.A. Shikunova,V.N. Kurlov
Abstract Sapphire shaped crystals are considered as a favorable material platform of the terahertz (THz) waveguide and fiber optics. Unique physical properties of sapphire, along with advantages of the Edge-defined Film-fed Growth (EFG) technique, yield fabrication of the THz waveguides and fibers with a complex cross-section geometry directly from the Al2O3-melt, where no labour-intensive mechanical
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Semi-wet growth and characterization of multi-functional nano-engineered mixed metal oxides for industrial application Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-07-17 Laxman Singh, Ravikant Sharma, Narayan Singh, Atendra Kumar, Dev K Mahato, Youngil Lee, Mikhael Bechelany, KD Mandal
This review paper covers the low temperature wet growth of nano-engineered particles of ZnO-based mixed metal oxides, their growth mechanism, and characterization using X-ray diffraction, SEM, TEM and IR, UV–visible, and XPS spectral techniques. Main focus of this article is centered on low temperature semi-wet methods of synthesis that are suitable for large scale production of zinc oxide-based systems
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Growth, characterization and performance of bulk and nanoengineered molybdenum oxides for electrochemical energy storage and conversion Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-06-11 C.V. Ramana, A. Mauger, C.M. Julien
Molybdenum oxides (MoOy) exhibit quite interesting structural, chemical, electrical, optical and electrochemical properties, which are often dependent on the synthetic procedures and fabrication conditions. The MoOy materiails are promising in numerous current and emerging technological applications, which include nanoelectronics, optoelectronics, energy storage and micromechanics. However, fundamental
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Progress in-situ synthesis of graphitic carbon nanoparticles with physical vapour deposition Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-06-04 Abdul Wasy Zia, Martin Birkett, Mohsin Ali Badshah, Munawar Iqbal
Graphitic carbon nanoparticles are in high demand for sensing, health care, and manufacturing industries. Physical vapour deposition (PVD) methods are advantageous for in-situ synthesis of graphitic carbon particles due to their ability to produce large area distributions. However, the carbon particles can agglomerate, irrespective of the PVD method, and form coagulated structures while growing inside
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Synthesis of hexagonal boron nitride: From bulk crystals to atomically thin films Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-03-08 J. Marcelo J. Lopes
Hexagonal boron nitride (h-BN) is a wide band gap layered material that is promising for a plethora of applications ranging from neutron detection to quantum information processing. Moreover, it has become highly relevant in the field of two-dimensional crystals and their van der Waals heterostructures due to its multiple functionality as substrate, encapsulation layer, tunneling barrier, or dielectric
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Bulk single crystals of β-Ga2O3 and Ga-based spinels as ultra-wide bandgap transparent semiconducting oxides Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-02-01 Zbigniew Galazka, Steffen Ganschow, Klaus Irmscher, Detlef Klimm, Martin Albrecht, Robert Schewski, Mike Pietsch, Tobias Schulz, Andrea Dittmar, Albert Kwasniewski, Raimund Grueneberg, Saud Bin Anooz, Andreas Popp, Uta Juda, Isabelle M. Hanke, Thomas Schroeder, Matthias Bickermann
Abstract In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa2O4. High melting points of the materials of about 1800 -1930 °C and their thermal instability, including incongruent decomposition of Ga-based
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Disk-driven flows and interface shape in vertical Bridgman growth with a baffle Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2021-01-20 A.G. Ostrogorsky
In vertical Bridgman (VB) systems, the shape of the S-L interface greatly influences the yield and perfection of single crystal, because of the continuous contact with the crucible. The melt flows and the shape of the S-L interface are difficult to modify and control. Baffles are flow-directing or obstructing devices. In VB melts, the baffles are disk shaped, and positioned horizontally above the solid-liquid
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Dilute nitride III-V nanowires for high-efficiency intermediate-band photovoltaic cells: Materials requirements, self-assembly methods and properties Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2020-11-01 Paola Prete, Nico Lovergine
ABSTRACT This paper deals with dilute nitride III-V (III-N-V) semiconductor nanowires and their synthesis by bottom-up (so-called self-assembly) methods for application to novel and high efficiency intermediate-band solar cells (IBSCs). Nanowire-IBSCs based on III-N-V compounds promise to overcome many of the limitations encountered so far in quantum-dots or planar-heterostructure IBSCs; indeed, thanks
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Atomic-resolution structure imaging of defects and interfaces in compound semiconductors Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2020-11-01 David J. Smith
Abstract This review focuses on the use of atomic-resolution structure imaging in the transmission electron microscope (TEM) to determine atomic arrangements at defects and interfaces in compound semiconductor (CS) thin films and heterostructures. The article begins with a brief overview of relevant sample preparation techniques and a short description of suitable TEM operating modes and some practical
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Progress in Modeling of III-Nitride MOVPE Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2020-08-01 Martin Dauelsberg, Roman Talalaev
Abstract This review provides an introduction to III-Nitrides MOVPE process modeling and its application to the design and optimization of MOVPE processes. Fundamentals of the MOVPE process with emphasis on transport phenomena are covered. Numerical techniques to obtain solutions for the underlying governing equations are discussed, as well as approaches to describe multi-component diffusion for typical
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Arsenides-and related III-V materials-based multilayered structures for terahertz applications: Various designs and growth technology Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2020-05-01 Alexander E. Yachmenev, Sergey S. Pushkarev, Rodion R. Reznik, Rustam A. Khabibullin, Dmitry S. Ponomarev
Abstract The fabrication and investigation of single and multilayered structures have become an essential issue in the past decades since these structures directly define valuable properties and efficiency of widely used terahertz (THz) emitters and detectors. Since the development of molecular-beam epitaxy, as well as other crystal growth techniques, a variety of structural designs has appeared and
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The role of silica and alkaline earth metals with biomolecules in the biomineralization processes: the eggshell's formation and the crystallization in vivo for x-ray crystallography Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2020-02-01 Nerith Rocío Elejalde-Cadena, Mayra Cuéllar-Cruz, Abel Moreno
Abstract This contribution is a scientific journey divided into three parts. In the first part, we review the role that silica biomorphs of alkaline earth metals have played in the formation of complex structures as a reminiscence of the chemistry of the primitive life on Earth. These biomorphs, and their variety of forms synthesized by simple chemical reactions, can nowadays be experimentally used
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Growth and characterization of two-dimensional crystals for communication and energy applications Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-11-01 Laxmi Narayan Tripathi, Sourabh Barua
Abstract This review article covers the growth and characterization of two-dimensional (2D) crystals of transition metal chalcogenides, h-BN, graphene, etc. The chemical vapor transport method for bulk single crystal growth is discussed in detail. Top-down methods like mechanical and liquid exfoliation and bottom-up methods like chemical vapor deposition and molecular beam epitaxy for mono/few-layer
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Preferred crystallographic orientation of nanocrystals embedded inside nanopores Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-11-01 Hanna Bishara, Shlomo Berger
Abstract The preferred crystallographic orientation of nanocrystals plays a significant role in determining their properties. From the wide variety of nanocrystal growth techniques, we focus in this paper on crystal growth by precipitation from liquid solutions inside porous substrates, and discuss the progress that has been made during the last decade concerning the control of crystal growth direction
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Hair growth at a solid-liquid interface as a protein crystal without cell division Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-08-01 Jun-ichi Chikawa, Masaichi Bandou, Ken Tabuchi, Katsuhiko Tani, Hisashi Saji, Yozo Takasaki
Abstract Concentrations of elements in single hair samples were evaluated by X-ray fluorescence by scanning with a narrow beam in the growth direction. Zn binds to the hair protein molecules, and is distributed uniformly from hair tip to root bulb by steady-state growth. To avoid the effect of thickness variation for the bulb, the hair elements were evaluated as the amount per protein molecule using
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Design, growth and characterization of PbTe-based thermoelectric materials Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-05-01 Ching-Hua Su
Abstract Thermoelectric devices convert thermal energy, i.e. heat, into electric energy. With no moving parts, the thermoelectric generator has demonstrated its advantage of long-duration operational reliability. The IV–VI compound semiconductor PbTe-based materials have been widely adopted for the thermoelectric applications in the medium temperature range of 350–650 °C. In most of the reports, thermoelectric
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Mechanism for generating interstitial atoms by thermal stress during silicon crystal growth Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-02-01 Takao Abe, Toru Takahashi, Koun Shirai
Abstract It has been known that, in growing silicon from melts, vacancies (Vs) predominantly exist in crystals obtained by high-rate growth, while interstitial atoms (Is) predominantly exist in crystals obtained by low-rate growth. To reveal the cause, the temperature distributions in growing crystal surfaces were measured. From this result, it was presumed that the high-rate growth causes a small
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FIBSIMS: A review of secondary ion mass spectrometry for analytical dual beam focussed ion beam instruments Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-02-01 Lex Pillatsch, Fredrik Östlund, Johann Michler
Abstract Secondary ion mass spectrometry (SIMS) is a well-known technique for 3D chemical mapping at the nanoscale, with detection sensitivity in the range of ppm or even ppb. Energy dispersive X-ray spectroscopy (EDS) is the standard chemical analysis and imaging technique in modern scanning electron microscopes (SEM), and related dual-beam focussed ion beam (FIBSEM) instruments. Contrary to the use
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Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2019-02-01 S.V. Ivanov, M.Yu. Chernov, V.A. Solov'ev, P.N. Brunkov, D.D. Firsov, O.S. Komkov
Abstract High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5 μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1 A are traditionally used for this spectral range. The attractive idea to
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Sapphire shaped crystals for waveguiding, sensing and exposure applications Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-12-01 G.M. Katyba, K.I. Zaytsev, I.N. Dolganova, I.A. Shikunova, N.V. Chernomyrdin, S.O. Yurchenko, G.A. Komandin, I.V. Reshetov, V.V. Nesvizhevsky, V.N. Kurlov
Abstract Second half of the XX century was marked by a rapid development of sapphire shaped crystal growth technologies, driven by the demands for fast, low-cost, and technologically reliable methods of producing sapphire crystals of complex shape. Numerous techniques of shaped crystal growth from a melt have been proposed relying on the Stepanov concept of crystal shaping. In this review, we briefly
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Metalorganic vapor phase epitaxy of III–V-on-silicon: Experiment and theory Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-12-01 Oliver Supplie, Oleksandr Romanyuk, Christian Koppka, Matthias Steidl, Andreas Nägelein, Agnieszka Paszuk, Lars Winterfeld, Anja Dobrich, Peter Kleinschmidt, Erich Runge, Thomas Hannappel
Abstract The integration of III–V semiconductors with Si has been pursued for more than 25 years since it is strongly desired in various high-efficiency applications ranging from microelectronics to energy conversion. In the last decade, there have been tremendous advances in Si preparation in hydrogen-based metalorganic vapor phase epitaxy (MOVPE) environment, III–V nucleation and subsequent heteroepitaxial
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Surface modification and grafting of carbon fibers: A route to better interface Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-09-01 Nischith Raphael, K. Namratha, B.N. Chandrashekar, Kishor Kumar Sadasivuni, Deepalekshmi Ponnamma, A.S. Smitha, S. Krishnaveni, Chun Cheng, K. Byrappa
Abstract This review is an audit of various Carbon fibers (CF) surface modification techniques that have been attempted and which produced results with an enhancement in the interfacial characteristics of CFRP systems. An introduction to the CF surface morphology, various techniques of modifications, their results and challenges are discussed here. CFs are emerging as the most promising materials for
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Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-09-01 M. Zajac, R. Kucharski, K. Grabianska, A. Gwardys-Bak, A. Puchalski, D. Wasik, E. Litwin-Staszewska, R. Piotrzkowski, J. Z Domagala, M. Bockowski
Abstract Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type
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Solution combustion synthesis, energy and environment: Best parameters for better materials Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-06-01 Francesca Deganello, Avesh Kumar Tyagi
Abstract Solution combustion synthesis (SCS) is a worldwide used methodology for the preparation of inorganic ceramic and composite materials with controlled properties for a wide number of applications, from catalysis to photocatalysis and electrocatalysis, from heavy metal removal to sensoristics and electronics. The high versatility and efficiency of this technique have led to the introduction of
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Synthesis and characterization of electrical features of bismuth manganite and bismuth ferrite: effects of doping in cationic and anionic sublattice: Materials for applications Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2018-02-01 A. Molak, D.K. Mahato, A.Z. Szeremeta
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Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-12-01 Qiang Li, Kei May Lau
Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial
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Crystal growth of inorganic, organic, and biological macromolecules in gels Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-09-01 Abel Moreno, María J. Rosales-Hoz
The growth of suitable crystals for X-ray crystallography studies is often a big obstacle on the way to getting a crystal structure of good quality. The growth of good protein crystals has promoted the development of several crystallization techniques1 These difficulties propmpted the development of gel techniques; agarose and silica gels were among the most studied systems. Less effort has been put
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Lifting the mist of flatland: The recent progress in the characterizations of two-dimensional materials Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-09-01 Mengjian Zhu, Kun Huang, Kai-Ge Zhou
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Germanium based photonic components toward a full silicon/germanium photonic platform Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-06-01 V. Reboud, A. Gassenq, J.M. Hartmann, J. Widiez, L. Virot, J. Aubin, K. Guilloy, S. Tardif, J.M. Fédéli, N. Pauc, A. Chelnokov, V. Calvo
Abstract Lately, germanium based materials attract a lot of interest as they can overcome some limits inherent to standard Silicon Photonics devices and can be used notably in Mid-Infra-Red sensing applications. The quality of epitaxially grown intrinsic and doped materials is critical to reach the targeted performances. One of the main challenges in the field remains the fabrication of efficient group-IV
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Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-06-01 S.V. Novikov, A.J. Kent, C.T. Foxon
Abstract Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid-state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured using the AlGaN material system; however, their efficiency is still low. The majority of UV LEDs require AlxGa1-xN layers with compositions in
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High-precision quantitative atomic-site-analysis of functional dopants in crystalline materials by electron-channelling-enhanced microanalysis Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-06-01 Shunsuke Muto, Masahiro Ohtsuka
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Spray pyrolysis deposition of undoped SnO2 and In2O3 films and their structural properties Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2017-02-01 G. Korotcenkov, B.K. Cho
Abstract In this paper the results of structural analysis of the SnO 2 and In 2 O 3 films deposited by spray pyrolysis are presented. The main goals of this analysis are summarizing the results obtained in this field, highlighting a correlation between parameters of film deposition and the material structure and formulating some general regularities, typical for metal oxides. Peculiarities and mechanisms
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Atomic layer deposition of high-k dielectrics on III–V semiconductor surfaces Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2016-12-01 Theodosia Gougousi
Abstract The goal of this article is to provide an overview of the state of knowledge regarding the Atomic Layer Deposition (ALD) of metal oxides on III–V semiconductor surfaces. An introduction to ALD, the band structure, various defects present on the III–V surface and how they relate to Fermi level pinning are discussed. Surface passivation approaches are examined in detail in conjunction with experimental
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Single crystal growth by the traveling solvent technique: A review Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2016-12-01 S.M. Koohpayeh
A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural
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Spring and parachute: How cocrystals enhance solubility Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2016-09-01 Dhara D. Bavishi, Chetan H. Borkhataria
Abstract This article is intended to combine literature on cocrystallization – a tool for enhancing the solubility and for improving the physicochemical properties of an API (an API is the molecule which is responsible for providing the therapeutic effect) with special emphasis on the mechanism responsible for the same. The pharmaceutical industries are witnessing a developing crisis in the process
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Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides Prog. Cryst. Growth Ch. Mater. (IF 5.1) Pub Date : 2016-09-01 Swee Liang Wong, Hongfei Liu, Dongzhi Chi
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have received significant attention recently due to their unique properties such as a transition from indirect to direct band gap when thinned down to a monolayer and also valley-dependent photoluminescence. In addition, being a semiconductor with considerable mobility, it has been touted as a candidate in next generation electronics