Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have received significant attention recently due to their unique properties such as a transition from indirect to direct band gap when thinned down to a monolayer and also valley-dependent photoluminescence. In addition, being a semiconductor with considerable mobility, it has been touted as a candidate in next generation electronics. However, a major hurdle to its implementation is the difficulty in producing large areas of these 2D TMDCs with well-defined thicknesses. In this review, we will first introduce the basic properties as well as the various synthesis methods of 2D TMDCs. Focus will be placed on recent advances in chemical vapor deposition (CVD) growth as they currently yield the largest areas. Obstacles present in CVD growth will be presented and existing solutions to them will be discussed in tandem with current characterization methods for evaluation of crystal quality. Through our presentation on the latest approaches to issues in CVD growth, we hope to present the readers a perspective on recent developments as well as providing an outlook on the future of CVD growth of TMDCs.

中文翻译：

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二维过渡金属二硫属化物化学气相沉积生长的新进展

摘要 二维 (2D) 过渡金属二硫属化物 (TMDC) 由于其独特的性质，例如在减薄到单层时从间接带隙过渡到直接带隙以及依赖于谷的光致发光，最近受到了极大的关注。此外，作为具有相当大移动性的半导体，它被吹捧为下一代电子产品的候选者。然而，其实施的一个主要障碍是难以生产具有明确定义厚度的大面积二维 TMDC。在这篇综述中，我们将首先介绍二维 TMDC 的基本特性以及各种合成方法。重点将放在化学气相沉积 (CVD) 生长的最新进展上，因为它们目前产生的面积最大。将介绍 CVD 生长中存在的障碍，并将与当前用于评估晶体质量的表征方法一起讨论这些障碍的现有解决方案。通过我们对 CVD 增长问题的最新方法的介绍，我们希望向读者展示对近期发展的看法，并提供对 TMDC CVD 增长未来的展望。