Abstract Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm−3, p-type with free hole concentration of 1016 cm−3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown.

中文翻译：

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氮化镓的基本氨热生长——最新技术、挑战、前景

摘要 本文介绍和讨论了基本环境下体块GaN 生长的氨热技术的最新进展。这种方法能够生长出直径为 2 英寸、结构特性优异、曲率半径超过数十米、穿透位错密度为 5 × 104 cm-2 数量级的晶体。可以获得具有不同类型导电性的晶体，自由电子浓度高达 1019 cm-3 的 n 型，自由空穴浓度为 1016 cm-3 的 p 型，以及电阻率超过 1011 Ω cm 的半绝缘晶体。根据材料中存在的点缺陷来描述具有各种电特性的氨热 GaN。还简要展示了高质量 GaN 衬底的潜在应用。