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Superdiffusive to ballistic transport in nonintegrable Rydberg simulator npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-19 Chun Chen, Yan Chen, Xiaoqun Wang
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Magnetic heating of interacting nanoparticles under different driving field waveforms Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-18 J. Ortega-Julia, D. Ortega, J. Leliaert
This study explores the impact of different magnetic driving field waveforms on nanoparticle heating in magnetic hyperthermia. Our research, which shifts the usual focus from individual nanoparticle properties to interacting particle clusters, evidences that square waves induce more uniform and greater heating than sinusoidal waves. The sequential switching observed with sinusoidal waves, which additionally
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Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-18 A. Papamichail, A. R. Persson, S. Richter, V. Stanishev, N. Armakavicius, P. Kühne, S. Guo, P. O. Å. Persson, P. P. Paskov, N. Rorsman, V. Darakchieva
Ultra-thin high-Al content barrier layers can enable improved gate control and high-frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the precise composition control is very challenging. In this work, we investigate the compositional profiles of AlxGa1−xN/GaN HEMT structures with targeted Al content in the barrier layer, x = 0.50, 0.70, and 1, and thickness in the sub-10
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Regulating phase homogeneity by self-assembled molecules for enhanced efficiency and stability of inverted perovskite solar cells Nat. Photon. (IF 32.3) Pub Date : 2024-09-18 Xi Wang, Jia Li, Renjun Guo, Xinxing Yin, Ran Luo, Dengyang Guo, Kangyu Ji, Linjie Dai, Haoming Liang, Xiangkun Jia, Jinxi Chen, Zhenrong Jia, Zhuojie Shi, Shunchang Liu, Yuduan Wang, Qilin Zhou, Tao Wang, Guangjiu Pan, Peter Müller-Buschbaum, Samuel D. Stranks, Yi Hou
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Highly tunable skyrmion-like polar nanodomains for high-density ferroelectric hard disks Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-09-17 Hongying Chen, Wenda Yang, Cheng Li, Peijie Jiao, Zhiyu Liu, Chuanjie Lin, Yaoyao Chen, Guo Tian, Yu Deng, Yuefeng Nie, Yongjun Wu, Jun-Ming Liu, Zijian Hong, Xingsen Gao, Di Wu
Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer
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Energy storage chemistry: Atomic and electronic fundamental understanding insights for high-performance supercapacitors Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-09-17 Thanigai Arul Kumaravelu, Ramana Ramya Jayapalan, Han-Wei Chang, Asokan Kandasami, Lionel Vayssieres, Chung-Li Dong
The scarcity of fuels, high pollution levels, climate change, and other major environmental issues are critical challenges that modern societies are facing, mostly originating from fossil fuels-based economies. These challenges can be addressed by developing green, eco-friendly, inexpensive energy sources and energy storage devices. Electrochemical energy storage materials possess high capacitance
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Swift heavy ion irradiation-induced enhancement of spin–orbit torque efficiency in Pt/Co/Ta trilayers Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Jianrong Zhang, Yuzhi Li, Xiaodong He, Qi Zhang, Ze Yan, Yuhan Chang, Baoshan Cui, Yalu Zuo, Yan-bin Sheng, Li Xi
Increasing the efficiency of spin–orbit torque (SOT) is of great interest in applications for magnetic random access memory and logic devices due to decreased energy consumption. Here, we present that the SOT efficiency of Pt/Co/Ta films with perpendicular magnetic anisotropy can be improved by swift high-energy heavy Fe11+ ion irradiation, which is an effective method to alter crystallinity, interface
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Statistical features of the response of a superconducting hot-electron bolometer to extremely weak terahertz pulses of picosecond and nanosecond duration Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 T. I. Novikova, K. A. Kuznetsov, I. V. Korolev, I. V. Pentin, P. A. Prudkovskii, G. Kh. Kitaeva
We study the statistical distributions of the output signals of a superconducting hot-electron bolometer (HEB) detector exposed to weak photon pulses of 1 THz (terahertz) frequency. Pulses with variable photon numbers were generated through strongly non-degenerate parametric downconversion (PDC) in a LiNbO3 crystal at 4.8 K. Fundamental differences in histograms are found between two PDC pumping modes
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High-quality Ge/SiGe heterostructure with atomically sharp interface grown by molecular beam epitaxy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Jie-yin Zhang, Ming Ming, Jian-huan Wang, Ding-ming Huang, Han Gao, Yi-xin Chu, Bin-xiao Fu, H. Q. Xu, Jian-jun Zhang
Germanium is a versatile material for realization of spin and topological quantum computing. Here, we report on the epitaxial growth of an undoped Ge/SiGe heterostructure in which a hole quantum well is formed in the sandwiched Ge layer. The heterostructure is grown on Si (001) via molecular beam epitaxy (MBE). Atomic force microscopy characterizations display a flat surface with a root mean square
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Charge carrier absorption in n-type Sb2Se3 Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 F. Herklotz, E. V. Lavrov, T. D. C. Hobson, J. D. Major, K. Durose
The optical and electrical properties of n-type chlorine-doped Sb2Se3 single crystals, with free carrier concentrations above 1016 cm−3 at room temperature, have been studied. The experiments reveal a strongly polarized temperature-dependent long-wavelength infrared absorption attributable to conduction band electrons within the material. For wavelengths between 1.6 and 6 μm, the room temperature absorption
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Compact widely tunable laser integrated on an indium phosphide membrane platform Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Tasfia Kabir, Yi Wang, Stefano Tondini, Kevin Williams, Yuqing Jiao, Martijn J. R. Heck
We present the design, fabrication, and characterization results of a compact, widely tunable laser realized on an indium phosphide membrane-on-silicon (IMOS) platform. The laser features a compact Mach–Zehnder interferometric structure as the wavelength-selective intracavity filter with a footprint of 0.13 mm2. The filter design is optimized to ensure narrow filter transmission and high side-mode-to-main-mode-ratio
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300-nm-thick, ultralow-loss silicon nitride photonic integrated circuits by 8-in. foundry production Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Xuguang Zhang, Yuxin Liang, Yujun Chen, Bitao Shen, Jiahui Huang, Chenghao Lao, Yichen Wu, Zhihui Li, Dapeng Liu, Haowen Shu, Weiwei Hu, Xingjun Wang, Naidi Cui, Lin Chang
Silicon nitride (Si3N4) photonic integrated circuits are rapidly developing in recent decades. The low loss of Si3N4 attracts significant attention and facilitates a wide range of applications in integrated photonics. In this work, we demonstrate the foundry fabrication of a 300-nm-thick 8-in. wafer-scale Si3N4 platform, with a microresonator intrinsic quality factor of up to 15×106, corresponding
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ScAlInN/GaN heterostructures grown by molecular beam epitaxy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Haotian Ye, Rui Wang, Liuyun Yang, Jinlin Wang, Tao Wang, Ran Feng, Xifan Xu, Wonseok Lee, Ping Wang, Xinqiang Wang
Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their potential in advanced high-frequency and high-power electronic applications. We report on the molecular beam epitaxy of quaternary alloy ScAlInN, which is an encouraging strategy to improve the heterointerface quality when grown at relatively low temperatures. Monocrystalline wurtzite phase and uniform domain
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Non-Foster approach to broadband optical metamaterials based on Lorentzian gain materials Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Silvio Hrabar, Richard W. Ziolkowski
All passive metamaterials are inherently narrowband due to fundamental dispersion-energy constraints, and their dispersive properties are usually approximated by a Lorentz model. However, there are broadband active metamaterials in the radio frequency (RF) regime based on negative capacitors with non-Foster dispersion properties. Non-Foster dispersion is usually considered as an “electronic-engineering
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Surface thermomigration of 2D voids Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Stefano Curiotto, Nicolas Combe, Pierre Müller, Ali El Barraj, Nayef Abu Dahech, Fabien Cheynis, Olivier Pierre-Louis, Frédéric Leroy
In a thermal gradient, surface nanostructures have been experimentally observed to move due to thermomigration. However, analytical models that describe the thermomigration force acting on surfaces are still controversial. In this work, we start from a thermodynamic approach based on the Massieu function, which is used to describe thermomigration of single adatoms, to develop an expression for the
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Spin filtering and quantum transport with transition metal-doped hydrogenated silicon quantum dot Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Hemant Arora, Arup Samanta
Spin filtering is a fundamental operation in spintronics, enabling the generation and detection of spin-polarized carriers. Here, we proposed and theoretically demonstrated that a 3d transition metal (TM) doped hydrogenated silicon quantum dot (TM:H-SiQD) is a suitable candidate for spin-filter devices. Using density functional theory, we investigate the structure, electronic properties, and magnetic
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Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe3+xGaTe2 Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Gaojie Zhang, Jie Yu, Hao Wu, Li Yang, Wen Jin, Bichen Xiao, Wenfeng Zhang, Haixin Chang
Two-dimensional (2D) van der Waals (vdW) magnets are crucial for ultra-compact spintronics. However, so far, no vdW crystal has exhibited tunable above-room-temperature intrinsic ferromagnetism in the 2D ultrathin regime. Here, we report the tunable above-room-temperature intrinsic ferromagnetism in ultrathin vdW crystal Fe3+xGaTe2 (x = 0 and 0.3). By increasing the Fe content, the Curie temperature
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Topological photonic quasicrystal alloy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Ziyao Wang, Xiang Xi, Zhen Gao
Recently, a concept of topological photonic alloy was proposed by mixing magnetized and non-magnetized gyromagnetic rods in a two-dimensional square photonic crystal that supports tunable Chern bandgaps and robust chiral edge states even at a low concentration of magnetized rods. However, whether such a notion can be extended to non-crystalline systems is still an open question. Here, we theoretically
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Ferrimagnetic second-order topological insulator with valley polarization in two-dimensional magnet Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-17 Xin-yu Liu, Wei-xiao Ji, Meng Ding, Sheng-shi Li, Chang-wen Zhang
Two-dimensional (2D) ferromagnetic and antiferromagnetic second-order topological insulators (SOTIs) coexisting with valley polarization have received increasing attention recently, while 2D valley-polarized ferrimagnetic (ferri-valley) SOTI has not been reported yet. In this work, we propose an effective six-band tight-binding model based on structural symmetry to confirm the possibility of coexistence
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Resource-efficient photonic quantum computation with high-dimensional cluster states Nat. Photon. (IF 32.3) Pub Date : 2024-09-16 Ohad Lib, Yaron Bromberg
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Experimental preparation of multiphoton-added coherent states of light npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-14 Jiří Fadrný, Michal Neset, Martin Bielak, Miroslav Ježek, Jan Bílek, Jaromír Fiurášek
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Demonstration of quantum network protocols over a 14-km urban fiber link npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-14 Stephan Kucera, Christian Haen, Elena Arenskötter, Tobias Bauer, Jonas Meiers, Marlon Schäfer, Ross Boland, Milad Yahyapour, Maurice Lessing, Ronald Holzwarth, Christoph Becher, Jürgen Eschner
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An extremely bad-cavity laser npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-13 Jia Zhang, Tiantian Shi, Jianxiang Miao, Deshui Yu, Jingbiao Chen
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Applications of surface enhanced Raman scattering (SERS) spectroscopy for detection of nucleic acids Nanophotonics (IF 6.5) Pub Date : 2024-09-14 Aleksandra Michałowska, Andrzej Kudelski
Nucleic acids (deoxyribonucleic acid – DNA and ribonucleic acid – RNA) are essential components of all living organisms, with DNA encoding genetic information and RNA facilitating vital biological processes. The detection of nucleic acids having a specific sequence is crucial for identifying organisms and diagnosing genetic diseases. Because surface-enhanced Raman spectroscopy (SERS) is considered
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Large-scale simulations of Floquet physics on near-term quantum computers npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-13 Timo Eckstein, Refik Mansuroglu, Piotr Czarnik, Jian-Xin Zhu, Michael J. Hartmann, Lukasz Cincio, Andrew T. Sornborger, Zoë Holmes
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Polarization-entangled photons from a whispering gallery resonator npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-13 Sheng-Hsuan Huang, Thomas Dirmeier, Golnoush Shafiee, Kaisa Laiho, Dmitry V. Strekalov, Gerd Leuchs, Christoph Marquardt
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Quantum autoencoders using mixed reference states npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-13 Hailan Ma, Gary J. Mooney, Ian R. Petersen, Lloyd C. L. Hollenberg, Daoyi Dong
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High-brightness transition metal-sensitized lanthanide near-infrared luminescent nanoparticles Nat. Photon. (IF 32.3) Pub Date : 2024-09-13 Jiang Ming, Ying Chen, Han Miao, Yong Fan, Shangfeng Wang, Zihan Chen, Zhenhao Guo, Zhixiu Guo, Luyin Qi, Xusheng Wang, Baofeng Yun, Peng Pei, Haisheng He, Hongxin Zhang, Yun Tang, Dongyuan Zhao, Gary Ka-Leung Wong, Jean-Claude G. Bünzli, Fan Zhang
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Positive-feedback organic light-emitting diodes and upconverters Nat. Photon. (IF 32.3) Pub Date : 2024-09-13 Raju Lampande, Jon-Paul S. DesOrmeaux, Adrian Pizano, Jonathon R. Schrecengost, Robert Cawthorn, Hunter Bowman, Alex Grede, Urcan Guler, John W. Hamer, Noel C. Giebink
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Brillouin laser-driven terahertz oscillator up to 3 THz with femtosecond-level timing jitter Nat. Photon. (IF 32.3) Pub Date : 2024-09-13 Brendan M. Heffernan, James Greenberg, Takashi Hori, Tatsuya Tanigawa, Antoine Rolland
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Carrier cooling in direct bandgap hexagonal silicon-germanium nanowires Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-13 M. F. Schouten, M. A. J. van Tilburg, V. T. van Lange, W. H. J. Peeters, R. Farina, M. M. Jansen, M. Vettori, E. P. A. M. Bakkers, J. E. M. Haverkort
Direct bandgap group IV semiconductors, like strained Ge, GeSn, or hexagonal SiGe, are considered promising for photonic integration on silicon. For group IV semiconductor lasers, it is crucial to understand the carrier cooling efficiency toward the band edges. From a fundamental perspective, a study of carrier cooling within the Γ-valley of direct bandgap group IV semiconductors is particularly interesting
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Quantitative determination of twist angle and strain in Van der Waals moiré superlattices Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-13 Steven J. Tran, Jan-Lucas Uslu, Mihir Pendharkar, Joe Finney, Aaron L. Sharpe, Marisa Hocking, Nathan J. Bittner, Kenji Watanabe, Takashi Taniguchi, Marc A. Kastner, Andrew J. Mannix, David Goldhaber-Gordon
Scanning probe techniques are popular, nondestructive ways to visualize the real space structure of Van der Waals moirés. The high lateral spatial resolution provided by these techniques enables extracting the moiré lattice vectors from a scanning probe image. We have found that the extracted values, while precise, are not necessarily accurate. Scan-to-scan variations in the behavior of the piezos
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Dual-comb spectroscopy over a 100 km open-air path Nat. Photon. (IF 32.3) Pub Date : 2024-09-12 Jin-Jian Han, Wei Zhong, Ruo-Can Zhao, Ting Zeng, Min Li, Jian Lu, Xin-Xin Peng, Xi-Ping Shi, Qin Yin, Yong Wang, Ali Esamdin, Qi Shen, Jian-Yu Guan, Lei Hou, Ji-Gang Ren, Jian-Jun Jia, Yu Wang, Hai-Feng Jiang, Xiang-Hui Xue, Qiang Zhang, Xian-Kang Dou, Jian-Wei Pan
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Heisenberg-limited Hamiltonian learning for interacting bosons npj Quantum Inform. (IF 6.6) Pub Date : 2024-09-11 Haoya Li, Yu Tong, Tuvia Gefen, Hongkang Ni, Lexing Ying
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Ultra-stable gold nanoparticles based on N-heterocyclic carbene interfacial compound Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-09-11 Kyung Ho Kim, Yejin Kim, Sung Eun Seo, Chul Soon Park, Jinyoung Kim, Yu Kyung Kim, Hyoung-il Kim, Yoo Min Park, Oh Seok Kwon
Interfacial chemicals for metal surface functionalization were developed for applications of high water dispersibility and environmental stability. Metal nanomaterials, i.e., gold nanoparticles (AuNPs), were synthesized by introducing various interfacial chemicals, to improve the hydrophilicity of biosensors, such as those used in fluorescence resonance energy transfer (FRET) and lateral flow assay
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The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-09-11 Kazi Faridur Rahman, Shaili Falina, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Mohd Syamsul
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention. There has been a rapid acceleration in the development of EVs in a number of nations in order to lessen their reliance on oil and their contribution to environmental pollution. In the tangible world, fully EVs do not release any carbon dioxide (CO2) emissions from their tailpipes, unlike any other conventional
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Effects of residual oxygen on superconducting niobium films Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Miguel Manzo-Perez, Moeid Jamalzadeh, Zhujun Huang, Xiao Tong, Kim Kisslinger, Dmytro Nykypanchuk, Davood Shahrjerdi
The integration of niobium (Nb) into emerging superconducting circuits can enhance their performance and function. However, growth of high purity Nb can be challenging due to its high reactivity with oxygen. Here, we examine the role of residual oxygen inside the growth chamber in transforming the structural, chemical, and superconducting properties of Nb films. We demonstrate that an increase in unintentional
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Versatile hybrid optical waveguides in amorphous silicon carbide with enhanced functionality and performance Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Mohammad Talebi Khoshmehr, Mahdi Mozdoor Dashtabi, Hamed Nikbakht, Bruno Lopez Rodriguez, Naresh Sharma, Iman Esmaeil Zadeh, Bob van Someren, B. Imran Akca
In most optical waveguides employed within photonic integrated circuits, light confinement is achieved by etching the high-index layer. However, these waveguides often lack versatility in optimizing optical properties, such as mode size, shape, dispersion, and polarization. Moreover, they frequently suffer from high coupling losses and their propagation losses are significantly influenced by the quality
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Macrospin study on magnetization reversal in synthetic antiferromagnetically coupled composite of perpendicularly magnetized nanomagnets Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Toshiki Yamaji, Hiroshi Imamura
Magnetization reversal in a synthetic antiferromagnetically coupled composite of perpendicularly magnetized nanomagnets is theoretically explored based on the macrospin model. The analytical expressions of magnetization reversal are derived. The analytical results are confirmed by the results of the Landau–Lifshitz–Gilbert simulation. Furthermore, we find that a critical antiferromagnetic coupling
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Unconventional two-dimensional quantum oscillations in three-dimensional thick SrRuO3 films Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Yuta Matsuki, Shinichi Nishihaya, Markus Kriener, Ren Oshima, Fumiya Miwa, Masaki Uchida
SrRuO3 is a prototypical transition metal oxide that hosts rich physical properties, including itinerant ferromagnetism, high conductivity, and intrinsic Hall effect originating in the Weyl points. Recently, high-quality SrRuO3 films with residual resistivity ratios of more than 50 have been reported to exhibit quantum oscillations at low temperatures in spite of their strong electron correlation.
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Enhanced e–e interaction in suspended 2DEG evidenced by transverse magnetic focusing Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Dmitry A. Egorov, Dmitriy A. Pokhabov, Evgeny Yu. Zhdanov, Andrey A. Shevyrin, Askhat K. Bakarov, Arthur G. Pogosov
The features of electron–electron (e–e) interaction in a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures, including the case of structures detached from the substrate in which this interaction is enhanced, are experimentally studied using transverse magnetic focusing over a wide temperature range. The measurements reveal pronounced resonant ballistic magnetoresistance peaks that
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Magnetic relaxometry of methemoglobin by widefield nitrogen-vacancy microscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Suvechhya Lamichhane, Evelyn Carreto Guevara, Ilja Fescenko, Sy-Hwang Liou, Rebecca Y. Lai, Abdelghani Laraoui
Hemoglobin (Hb) is a multifaceted protein, classified as a metalloprotein, chromoprotein, and globulin. It incorporates iron, which plays a crucial role in transporting oxygen within red blood cells. Hb functions by carrying oxygen from the respiratory organs to diverse tissues in the body, where it releases oxygen to fuel aerobic respiration, thus supporting the organism's metabolic processes. Hb
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Tungsten donors doping in β-gallium oxide single crystal Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Baizhong Li, Hongji Qi, A. M. Ahmed, Qinglin Sai, Mingyan Pan, Changtai Xia, H. F. Mohamed
Crystal structure, Raman spectra, electrical properties, and photoluminescence of unintentionally doped (UID) and W-doped β-Ga2O3 (W:β-Ga2O3) crystals grown using the optical floating zone technique were investigated. Based on the experimental data, W6+ ions substitute Ga3+ ions mainly in the octahedral lattice site, as revealed by the Raman spectroscopic assessment of W:β-Ga2O3 crystals. The carrier
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Polymer-assisted crystal growth regulation and defect passivation for efficient perovskite solar cells Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Jing Liu, Wanxian Cai, Wenzhe Shang, Wenrui Li, Shuhong Wang, Wanqing Cai, Yantao Shi, Yudi Wang
Despite the ongoing breakthroughs in power conversion efficiency (PCE) of perovskite solar cells (PSCs), the presence of inherent defects in perovskite films remains the predominant hurdle impeding the further progress of this promising photovoltaic technology. Herein, we propose a straightforward yet highly effective additive strategy to passivate the bulk defects of perovskite films. Specifically
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Tunable long-lived exciton lifetime and high carrier mobilities in Group III A elements doped two-dimensional blue phosphorene: A time domain ab initio study Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Chang Liu, Yanbo Qiu, Caifeng Zhou, Hao Dong
In this Letter, we combine first-principles calculations with the non-adiabatic molecular dynamics (NAMD) method to investigate the photocatalytic and excited-state properties of blue phosphorene (BlueP). Doping with Group III A elements not only maintains an appropriate bandgap and band edge positions for photocatalytic water splitting but also converts the indirect bandgap of BlueP to a direct bandgap
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MoS2 bipolar junction photo-transistor (BJPT) with high gain and millisecond speed Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Yujue Yang, Yongchao Zhang, Zihao Liu, Yin Long, Ziyu Li, Chunyang Yao, Xin Zhang, Huafeng Dong
Semiconducting two-dimensional (2D) MoS2 has emerged as a promising material for logic transistors and photodetectors, benefiting from its considerable mobility and strong light–mater interaction, along with the low cost and large area growth. However, the reported MoS2 based photodiode and photoconductor suffer from either absence of gain or slow dynamic response, limiting their practical application
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Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Muhammad Aqib, Mina Moradnia, Mihee Ji, Vijay S. Parameshwaran, Wendy L. Sarney, Sara Pouladi, Nam-In Kim, Rheno Paul Rajesh Kumar, Gregory A. Garrett, Anand V. Sampath, Rebecca L. Forrest, Jae-Hyun Ryou
Growing crack-free, epitaxial ultrawide-bandgap semiconductor films on cost-effective, large-area substrates, such as AlN on Si, poses a significant challenge due to substantial lattice and thermal expansion mismatches. We introduce an approach to mitigate tensile strain or reverse strain signs between the substrate and the AlN layer, thereby suppressing crack formation during the heteroepitaxial growth
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Selectable growth and electronic structures of two-dimensional layered InSe and In2Se3 films Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-11 Xianxian Xu, Qinghao Meng, Qichao Tian, Junyu Zong, Kaili Wang, Yi Zhang
InSe, as a representative two-dimensional (2D) semiconductor of the III–VI group, possesses numerous advantages and is widely used in 2D electronic and optoelectronic devices. In2Se3, known for its 2D ferroelectricity and high photoelectric response rates, has recently gained widespread attention. Therefore, realizing selectable growth of these two structural phases and studying their electronic structures
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Metalens array for quantum random number Appl. Phys. Rev. (IF 11.9) Pub Date : 2024-09-10 Yubin Fan, Shufan Chen, Xiaoyuan Liu, Xiaoyu Che, Xiaodong Qiu, Mu Ku Chen, Din Ping Tsai
Quantum random number generation (QRNG) leveraging intrinsic quantum uncertainty has attracted significant interest in the field of integrated photonic architecture, with applications in quantum cryptography, tests of quantum nonlocality, and beyond. The demand for compact, low-energy consumption, robust, fast, and cost-effective QRNGs integrated into photonic chips is highlighted, whereas most previous
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Effect of magnesium doping on NiO hole injection layer in quantum dot light-emitting diodes Nanophotonics (IF 6.5) Pub Date : 2024-09-10 Nayoon Lee, Van Khoe Vo, Hyo-Jun Lim, Sunwoo Jin, Thi Huong Thao Dang, Heewon Jang, Dayoung Choi, Joon-Hyung Lee, Byoung-Seong Jeong, Young-Woo Heo
This study reports on the fabrication of quantum dot light-emitting diodes (QLEDs) with an ITO/Ni1−x Mg x O/SAM/TFB/QDs/ZnMgO/Al structure and investigates the effects of various Mg doping concentrations in NiO on device performance. By doping Mg into the inorganic hole-injection layer NiO (Ni1−x Mg x O), we improved the band alignment with the hole-injection layer through band tuning, which enhanced
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High-performing organic/quantum dot hybrid upconversion device based on a single-component near-infrared-sensitive layer Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Ke Wang, Yuanhong Hu, Lixiang Chen, Haijun Jiang, Haohong Jiang, Xingwen Tan, Qiaoming Zhang, Yanlian Lei
A donor/acceptor (D/A) heterojunction with an interfacial energetic offset is demonstrated to enable efficient exciton dissociation in organic photodetectors and upconversion devices (UCDs). Unfortunately, this approach usually encounters complicated optimization procedures and interfacial instability. Herein, we present an alternative strategy for achieving high-performing UCDs by utilizing an organic
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Monolayer-scale AlN/GaN digital alloys grown by plasma-assisted molecular beam epitaxy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Siqi Li, Xiao Liang, Pengfei Shao, Songlin Chen, Zhenhua Li, Xujun Su, Tao Tao, Zili Xie, M. Ajmal Khan, Li Wang, T. T. Lin, Hideki Hirayama, Bin Liu, Dunjun Chen, Ke Wang, Rong Zhang
The efficiency of usual AlGaN based deep ultraviolet light-emitting devices is still quite low. The difficulties are basically originated from the fundamental material properties of AlGaN. This work has adopted monolayer-scale (AlN)m/(GaN)n ordered digital alloys (DAs) as alternatives to AlGaN random alloys, m and n are the numbers of monolayers. X-ray diffraction scans have demonstrated clear satellite
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Impact of orbital hybridization on spin-polarized electronic transport through Ni-MAPbI3 interfaces Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Xiangpeng Zhang, Wei Li, Yang Li, Linze Jiang, Xixiang Zhu, Haomiao Yu, Jinpeng Li, Yumeng Shi, Ding Yi, Kai Wang
The solution-processed methylammonium lead tri-iodine (MAPbI3), with long spin lifetimes and large spin diffusion lengths, has merit for developing stable perovskite spin valves (PeSV) with low saturation fields. By far, it remains challenging to avoid ill-defined ferromagnet-MAPbI3 interfaces during device fabrications using solution methods and to quantify the hybridized interfacial electronic and
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Enhanced and tunable near-field thermophotovoltaics driven by hybrid polaritons Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Lin Li, Xiaohu Wu, Haotuo Liu, Zhimin Yang, Kun Yu
Near-field thermophotovoltaics (NF-TPV) offers the potential for achieving elevated power density and conversion efficiency by leveraging the amplification of thermal radiation within a nanoscale gap. Here, we propose an NF-TPV device with a sandwich emitter composed of calcite film and graphene layer. The results show that this sandwich configuration can significantly enhance output power, outperforming
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Nonequilibrium bandgap modification in porphyrin-based metal-organic frameworks revealed by transient absorption spectroscopy Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Yadong Han, Junhong Yu, Yunfan Yang, Hang Zhang, Zhengbang Wang, Jianbo Hu
Modifying the equilibrium bandgap has proven to be an effective strategy for optimizing photocarrier properties in metal-organic frameworks (MOFs). In this work, we have investigated the nonequilibrium bandgap modification in cobalt porphyrin-based MOF (Co-TCPP MOF) nanofilms through transient absorption spectroscopy. Our results reveal a captivating redshift–blueshift crossover in the nonequilibrium
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Kinetics of monolayer MoS2-encapsulated nanobubbles on hexagonal boron nitride substrates Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Zihan Liu, Yingchun Jiang, Dingli Wang, Junpeng Lai, Huimin Zhou, Jia Deng, Changhong Ke
Understanding the kinetics of nanobubbles encapsulated by ultrathin two-dimensional (2D) layered van der Waals crystal membranes on atomically flat substrates is important to the applications of 2D materials and the pursuit of 2D nanobubble technologies. Here, we investigate the controlled motion of monolayer molybdenum disulfide (MoS2)-encapsulated nanobubbles on flat hexagonal boron nitride substrates
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Effective control of magnetism and transport properties of monolayer WV2N4 with two magnetic atomic layers and its van der Waals heterostructure Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Xiaoyan Guo, Xiaolin Zhang, Yu Zhu, Yuheng Liu, Xiufeng Han, Yu Yan
The large magneto-resistance (MR) effect produced by electric control of the magnetic state for van der Waals (vdW) heterostructures composed of vdW intrinsic magnets holds great significance for low-dissipation spintronic devices. Our first-principles calculations reveal that the proposed monolayer WV2N4 is a ferromagnetic (FM) metal with two magnetic V atomic layers, and the interlayer magnetic coupling
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FeS2/SnS2@C with mosaic-like heterointerface as robust sodium anode Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 Miaoxin Di, Tenglong Miao, Zhenqi Song, Suhua Chen, Ying Bai
Sodium-ion batteries (SIBs) have been widely researched due to their abundant resource and inherent safety. However, the major challenge for further commercialization of SIBs is the absence of low-priced anode electrodes with high reversible capacity and durability. Herein, a hierarchical heterogeneous structure of FeS2/SnS2@C nanocubes with rich two-dimensional mosaic-like heterointerface and N/S
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Frequency stabilization of adiabatic temperature change in Fe50Rh50 alloy in a cyclic magnetic field of 1.2 T Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 A. G. Gamzatov, P. A. Igoshev, A. M. Aliev, K. Qiao, F. Hu, J. Wang, B. Shen
We present the results of direct measurements of the adiabatic temperature change (ΔTad) for the Fe50Rh50 alloy in a cyclic magnetic field (CMF) of 1.2 T. It is shown that increasing the frequency of the CMF from 1 to 30 Hz is accompanied by a shift of the position of temperature dependence ΔTad(T) maximum, Tmax, toward low temperatures. With an increase in the CMF frequency from 1 to 5 Hz, the ΔTmax
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Destructive dielectric breakdown of 2D muscovite mica Appl. Phys. Lett. (IF 3.5) Pub Date : 2024-09-10 A. Maruvada, S. J. O'Shea, J. Deng, K. Shubhakar, N. Raghavan, K. L. Pey
This study investigates the destructive breakdown (DBD) phenomenon in the van der Waals gate dielectric 2D muscovite mica (4–12 nm thick), focusing on its electrical reliability as a gate dielectric material. Capacitor test structures were electrically stressed, and the resulting impact on the physical structure was analyzed using atomic force microscopy. The volume of material removed in a DBD event