Cu-to-Cu bonding has drawn a lot of attention as it not only has excellent electrical and thermal properties but also excellent electromigration resistance. It is believed to be a next-generation technology of IC packaging and it will help keep Moore’s law effective. According to previous studies, copper direct bonding using nanotwinned copper can reduce the bonding temperature to 150°C but still requires a vacuum atmosphere. This study employed an E-gun to plate a gold layer on nanotwinned copper thin films in order to prevent oxidation. With the aid of the thin gold layer, we can prevent the oxidation of Cu surfaces and reduce the surface roughness. In this way, we achieved bonding at 200°C in N₂ and 250°C in ambient pressure with a low bonding pressure of 0.78 MPa.

铜对铜键合不仅具有出色的电学和热学性能，而且还具有出色的抗电迁移性能，因此受到了广泛的关注。它被认为是IC封装的下一代技术，它将有助于保持摩尔定律的有效性。根据以前的研究，使用纳米孪晶铜的铜直接键合可以将键合温度降低到150°C，但仍需要真空气氛。这项研究采用电子枪在纳米孪晶铜薄膜上镀金，以防止氧化。借助于薄的金层，我们可以防止铜表面的氧化并降低表面粗糙度。通过这种方式，我们在200°C的N _2中和250°C的环境压力下实现了0.78 MPa的低粘合力。