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Low Temperature Cu-to-Cu Bonding in Non-vacuum Atmosphere with Thin Gold Capping on Highly (111) Oriented Nanotwinned Copper

  • TMS2019 Microelectronic Packaging, Interconnect, and Pb-free Solder
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Abstract

Cu-to-Cu bonding has drawn a lot of attention as it not only has excellent electrical and thermal properties but also excellent electromigration resistance. It is believed to be a next-generation technology of IC packaging and it will help keep Moore’s law effective. According to previous studies, copper direct bonding using nanotwinned copper can reduce the bonding temperature to 150°C but still requires a vacuum atmosphere. This study employed an E-gun to plate a gold layer on nanotwinned copper thin films in order to prevent oxidation. With the aid of the thin gold layer, we can prevent the oxidation of Cu surfaces and reduce the surface roughness. In this way, we achieved bonding at 200°C in N2 and 250°C in ambient pressure with a low bonding pressure of 0.78 MPa.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan

    Yu-Ting Wu & Chih Chen

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  1. Yu-Ting Wu
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  2. Chih Chen
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Correspondence to Chih Chen.

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Wu, YT., Chen, C. Low Temperature Cu-to-Cu Bonding in Non-vacuum Atmosphere with Thin Gold Capping on Highly (111) Oriented Nanotwinned Copper. J. Electron. Mater. 49, 13–17 (2020). https://doi.org/10.1007/s11664-019-07724-3

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  • DOI: https://doi.org/10.1007/s11664-019-07724-3

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