Abstract

We fabricated a ZnO-based Schottky diode via the deposition of a ZnO film co-doped with Al + In (4 at.%) on a boron-doped ZnO film (8 at.%). Each film was prepared by layering coatings (2, 3, 4, and 5 layers) by sol–gel deposition. The finished diode consists of the combination of seven layers (each layer with a thickness of around 90 nm). The total thickness of the diode is around 700 nm. The films were previously studied and structurally, optically and electrically characterized. Additionally, for comparative purposes, we fabricated and characterized un-doped ZnO films. The energy bandgap values of the un-doped films, mono-doped films, and co-doped films were 3.30 eV, 3.32 eV, and 3.34 eV, respectively. X-ray diffraction did not show traces of different phases from hexagonal Wurtzite-type ZnO. The electrical resistivity values obtained were 386, 4.44 × 10⁴, and 3.37 Ω-cm, respectively. The junction diodes were built by depositing layers of the high-resistivity material (ZnO:B) on ITO conductor substrates, followed by the deposition of layers of the low-resistivity material (ZnO:Al + In) on the same substrate. The I–V characteristics of these diodes were analyzed in terms of the number of the deposited layers (or the different thickness of the films). The results show a Schottky-type behavior in the dark and under light (spot lamp of 160 W), which is controlled by the thickness of the resistive layer. From the I–V curves, the characteristic parameters including barrier height, ideality factor, and series resistance were calculated. From the transconductance (g_m=dI/dV), it was possible to identify the presence of all the layer–layer interfaces. Depending on the thickness of the resistive ZnO:B film, we found a region of negative differential resistance and a region of visible light detection.

中文翻译：

---

溶胶-凝胶沉积多层膜制备的透明ITO / ZnO：B / ZnO：（Al + In）/ Ag肖特基二极管的电流-电压特性

抽象的

我们通过在掺硼的ZnO薄膜（占8％）上沉积与Al + In（4at。％）共掺杂的ZnO薄膜来制造基于ZnO的肖特基二极管。每层膜是通过溶胶-凝胶沉积法将涂层（2、3、4和5层）分层来制备的。成品二极管由七层组成（每层厚度约90 nm）。二极管的总厚度约为700 nm。先前已对薄膜进行了研究，并在结构，光学和电学方面进行了表征。另外，出于比较的目的，我们制造并表征了未掺杂的ZnO薄膜。未掺杂的膜，单掺杂的膜和共掺杂的膜的能带隙值分别为3.30eV，3.32eV和3.34eV。X射线衍射未显示出六方纤锌矿型ZnO的不同相的痕迹。获得的电阻率为386，⁴和3.37Ω-cm。通过在ITO导体基板上沉积高电阻率材料（ZnO：B）层，然后在同一基板上沉积低电阻率材料（ZnO：Al + In）层来构建结型二极管。根据沉积层数（或膜的不同厚度）分析了这些二极管的I – V特性。结果表明，在黑暗和光线（点光源为160 W）下，肖特基型行为受到电阻层厚度的控制。从我- V曲线，包括势垒高度，理想因子，和串联电阻的特征参数进行了计算。从跨导（g _m = d I / d V），就有可能确定所有层-层接口的存在。根据电阻性ZnO：B膜的厚度，我们发现了一个负差分电阻区域和一个可见光检测区域。