HfO x N y thin film was deposited on oxidized silicon substrate; its physical structure and chemical composition were studied in detail by X-ray diffractometer, scanning electron microscopy, field emission transmission electron microscope and X-ray photoelectron spectrometer. Microtemperature sensors with high sensitivity based on the film were fabricated. To clarify the conduction process of grain, grain boundary (GB) and the whole film, temperature-dependent AC impedances of a sensor were measured and analyzed in 40–300 K. The results show that at all of the measured temperatures, the resistance of grain is much larger than that of GB, and its rising rates with the temperature reduction are also much larger than that of GB, indicating that the resistive property of HfO x N y thin film is determined by grain. In addition, it has been confirmed that the conduction process of both the HfO x N y film and GB is dominated by thermal activation and Mott variable-range hopping (VRH) in relatively high and low temperature range, respectively. The conduction process of the grain obeys Mott VRH in the whole considered temperature range, while the Mott characteristic temperature is changed. These results provide new insights into the performance enhancement of the transition metal oxynitride-based temperature sensors.

中文翻译：

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半导体氧氮化铪薄膜中晶粒和晶界的电子传输机制

在氧化硅衬底上沉积HfO x N y 薄膜；通过X射线衍射仪、扫描电子显微镜、场发射透射电子显微镜和X射线光电子能谱仪对其物理结构和化学成分进行了详细研究。制作了基于该薄膜的高灵敏度微型温度传感器。为了阐明晶粒、晶界 (GB) 和整个薄膜的传导过程，在 40–300 K 下测量和分析了传感器的温度相关交流阻抗。结果表明，在所有测量温度下，晶粒远大于GB，其随温度降低的上升速率也远大于GB，说明HfO x N y 薄膜的电阻性能是由晶粒决定的。此外，已经证实，HfO x N y 薄膜和GB的传导过程分别在相对较高和较低的温度范围内由热激活和莫特可变范围跳跃（VRH）主导。在整个考虑的温度范围内，晶粒的传导过程服从莫特 VRH，而莫特特征温度发生变化。这些结果为基于过渡金属氧氮化物的温度传感器的性能增强提供了新的见解。