A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.

中文翻译：

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多通道功率晶体管成型

倾斜的三栅极几何形状改善了多通道AlGaN / GaN功率晶体管中的电场管理，从而导致更高的击穿电压和更低的导通电阻。