A slanted tri-gate geometry improves electric field management in multi-channel AlGaN/GaN power transistors leading to higher breakdown voltage and lower on-resistance.
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References
Ma, J. et al. In Proc. 2019 IEEE Int. Electron Devices Meeting (in the press); https://ieee-iedm.org/program/
Ng, J. H., Asubar, J. T., Tokuda, H. & Kuzuhara, M. In Proc. 2016 Int. Conference on Compound Semiconductor Technology 8b.3 (CS MANTECH, 2016).
Chu, R. M. et al. IEEE Trans. Electron Devices 52, 438–446 (2005).
Howell, R. S. et al. In Proc. 2014 IEEE Int. Electron Devices Meeting 11.5.1–11.5.4 (IEEE, 2014).
Ma, J., Erine, C., Xiang, P., Cheng, K. & Matioli, E. Appl. Phys. Lett. 113, 242102 (2018).
Ma, J. & Matioli, E. IEEE Electron Device Lett. 38, 1305–1308 (2017).
Middleton, C. et al. IEEE Electron Device Lett. 40, 1374–1377 (2019).
Zhang, T. et al. IEEE Electron Device Lett. 40, 75–78 (2019).
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Kuball, M. Multi-channel power transistors shape up. Nat Electron 2, 553–554 (2019). https://doi.org/10.1038/s41928-019-0341-z
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DOI: https://doi.org/10.1038/s41928-019-0341-z
