Tip-enhanced nanoscopy of two-dimensional transition metal dichalcogenides: progress and perspectives,Nanoscale

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Tip-enhanced nanoscopy of two-dimensional transition metal dichalcogenides: progress and perspectives
Nanoscale ( IF 5.8 ) Pub Date : 2022-11-17 , DOI: 10.1039/d2nr04864g
Jiaqi Shao ₁ , Weitao Su ₂

Affiliation

The optoelectronic properties of two-dimensional (2D) transition metal dichalcogenide (TMD) thin layers prepared by exfoliation or chemical vapour deposition are strongly modulated by defects at the nanoscale. The mediated electronic and optical properties are expected to be spatially localised in a nanoscale width neighbouring the defects. Characterising such localised properties requires an analytical tool with nanoscale spatial resolution and high optical sensitivity. In recent years, tip-enhanced nanoscopy, represented by tip-enhanced Raman spectroscopy (TERS) and tip-enhanced photoluminescence (TEPL), has emerged as a powerful tool to characterise the localised phonon and exciton behaviours of 2D TMDs and heterojunctions (HJs) at the nanoscale. Herein, we first summarise the recent progress of TERS and TEPL in the characterisation of several typical defects in TMDs, such as edges, wrinkles, grain boundaries and other defects generated in transfer and growth processes. Then the local strain and its dynamic control of phonon and exciton behaviours characterised by TERS and TEPL will be reviewed. The recent progress in characterising TMD HJs using TERS and TEPL will be subsequently summarised. Finally, the progress of TERS and TEPL combined with optoelectronic sensitive electronic scanning probe microscopy (SPM) in the applications of TMDs will be reviewed.

中文翻译：

二维过渡金属二硫化物的尖端增强纳米技术：进展与展望

通过剥离或化学气相沉积制备的二维 (2D) 过渡金属二硫化物 (TMD) 薄层的光电特性受到纳米级缺陷的强烈调制。介导的电子和光学特性预计将空间定位在与缺陷相邻的纳米级宽度内。表征这种局部特性需要具有纳米级空间分辨率和高光学灵敏度的分析工具。近年来，以尖端增强拉曼光谱 (TERS) 和尖端增强光致发光 (TEPL) 为代表的尖端增强纳米技术已成为表征二维 TMD 和异质结 (HJ) 局域声子和激子行为的有力工具。在纳米级。在此处，我们首先总结了 TERS 和 TEPL 在表征 TMD 中几种典型缺陷方面的最新进展，如边缘、皱纹、晶界等在转移和生长过程中产生的缺陷。然后将回顾以 TERS 和 TEPL 为特征的局部应变及其对声子和激子行为的动态控制。随后将总结使用 TERS 和 TEPL 表征 TMD HJ 的最新进展。最后，将综述 TERS 和 TEPL 结合光电敏感电子扫描探针显微镜 (SPM) 在 TMD 应用中的进展。然后将回顾以 TERS 和 TEPL 为特征的局部应变及其对声子和激子行为的动态控制。随后将总结使用 TERS 和 TEPL 表征 TMD HJ 的最新进展。最后，将综述 TERS 和 TEPL 结合光电敏感电子扫描探针显微镜 (SPM) 在 TMD 应用中的进展。然后将回顾以 TERS 和 TEPL 为特征的局部应变及其对声子和激子行为的动态控制。随后将总结使用 TERS 和 TEPL 表征 TMD HJ 的最新进展。最后，将综述 TERS 和 TEPL 结合光电敏感电子扫描探针显微镜 (SPM) 在 TMD 应用中的进展。

更新日期：2022-11-17

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