The optoelectronic properties of two-dimensional (2D) transition metal dichalcogenide (TMD) thin layers prepared by exfoliation or chemical vapour deposition are strongly modulated by defects at the nanoscale. The mediated electronic and optical properties are expected to be spatially localised in a nanoscale width neighbouring the defects. Characterising such localised properties requires an analytical tool with nanoscale spatial resolution and high optical sensitivity. In recent years, tip-enhanced nanoscopy, represented by tip-enhanced Raman spectroscopy (TERS) and tip-enhanced photoluminescence (TEPL), has emerged as a powerful tool to characterise the localised phonon and exciton behaviours of 2D TMDs and heterojunctions (HJs) at the nanoscale. Herein, we first summarise the recent progress of TERS and TEPL in the characterisation of several typical defects in TMDs, such as edges, wrinkles, grain boundaries and other defects generated in transfer and growth processes. Then the local strain and its dynamic control of phonon and exciton behaviours characterised by TERS and TEPL will be reviewed. The recent progress in characterising TMD HJs using TERS and TEPL will be subsequently summarised. Finally, the progress of TERS and TEPL combined with optoelectronic sensitive electronic scanning probe microscopy (SPM) in the applications of TMDs will be reviewed.