• A stable laminated Al₂O₃/HfO₂ insulator is developed by atomic layer deposition at a relatively lower temperature of 150 °C.

• The flexible thin-film transistors (TFTs) with bottom-gate top-contacted configuration are fabricated on a flexible substrate with the Al₂O₃/HfO₂ insulator.

• The flexible TFTs present the carrier mobilities of 9.7 cm² V⁻¹ s⁻¹, ON/OFF ratio of ~ 1.3 × 10⁶, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec⁻¹.

Flexible thin-film transistors (TFTs) have attracted wide interest in the development of flexible and wearable displays or sensors. However, the conventional high processing temperatures hinder the preparation of stable and reliable dielectric materials on flexible substrates. Here, we develop a stable laminated Al₂O₃/HfO₂ insulator by atomic layer deposition at a relatively lower temperature of 150 °C. A sputtered amorphous indium-gallium-zinc oxide (IGZO) with the stoichiometry of In_0.37Ga_0.20Zn_0.18O_0.25 is used as the active channel material. The flexible TFTs with bottom-gate top-contacted configuration are further fabricated on a flexible polyimide substrate with the Al₂O₃/HfO₂ nanolaminates. Benefited from the unique structural and compositional configuration in the nanolaminates consisting of amorphous Al₂O₃, crystallized HfO₂, and the aluminate Al–Hf–O phase, the as-prepared TFTs present the carrier mobilities of 9.7 cm² V⁻¹ s⁻¹, ON/OFF ratio of ~ 1.3 × 10⁶, subthreshold voltage of 0.1 V, saturated current up to 0.83 mA, and subthreshold swing of 0.256 V dec⁻¹, signifying a high-performance flexible TFT, which simultaneously able to withstand the bending radius of 40 mm. The TFTs with nanolaminate insulator possess satisfactory humidity stability and hysteresis behavior in a relative humidity of 60–70%, a temperature of 25–30 °C environment. The yield of IGZO-based TFTs with the nanolaminate insulator reaches 95%.

• 稳定的层压 Al ₂ O ₃ /HfO ₂绝缘体是在 150 °C 的相对较低温度下通过原子层沉积开发的。

• 具有底栅顶接触配置的柔性薄膜晶体管 (TFT) 是在具有 Al ₂ O ₃ /HfO ₂绝缘体的柔性基板上制造的。

• 柔性 TFT 的载流子迁移率为 9.7 cm ²  V ⁻¹  s ⁻¹，开/关比为 ~ 1.3 × 10 ⁶，亚阈值电压为 0.1 V，饱和电流高达 0.83 mA，亚阈值摆幅为 0.256 V dec ^{− 1} .

柔性薄膜晶体管 (TFT) 在柔性和可穿戴显示器或传感器的开发中引起了广泛兴趣。然而，传统的高加工温度阻碍了在柔性基板上制备稳定可靠的介电材料。在这里，我们在 150 °C 的相对较低温度下通过原子层沉积开发了一种稳定的层压 Al ₂ O ₃ /HfO _{2绝缘体。化学计量为 In 0.37} Ga _0.20 Zn _0.18 O _0.25的溅射非晶氧化铟镓锌 (IGZO)用作活性通道材料。_{具有底栅顶接触配置的柔性 TFT 进一步在具有 Al 2} O ₃ /HfO ₂纳米层压板的柔性聚酰亚胺基板上制造。受益于由非晶 Al ₂ O ₃、结晶 HfO ₂和铝酸盐 Al-Hf-O 相组成的纳米层压板的独特结构和组成配置，所制备的 TFT 的载流子迁移率为 9.7 cm ²  V ^-1  s ⁻¹，开/关比为 ~ 1.3 × 10 ⁶，亚阈值电压为 0.1 V，饱和电流高达 0.83 mA，亚阈值摆幅为 0.256 V dec ⁻¹，标志着高性能柔性TFT，同时能够承受40毫米的弯曲半径。具有纳米层压绝缘体的 TFT 在相对湿度为 60-70%、温度为 25-30 °C 的环境中具有令人满意的湿度稳定性和滞后行为。具有纳米层压绝缘体的 IGZO 基 TFT 的产率达到 95%。