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Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs
Microelectronics Reliability ( IF 1.6 ) Pub Date : 2022-09-25 , DOI: 10.1016/j.microrel.2022.114708
N. Modolo , M. Fregolent , F. Masin , A. Benato , A. Bettini , M. Buffolo , C. De Santi , M. Borga , N. Posthuma , B. Bakeroot , S. Decoutere , D. Vogrig , A. Neviani , G. Meneghesso , E. Zanoni , M. Meneghini

In this paper, for the first time the threshold voltage instability of 100 V rated p-GaN power HEMTs is investigated by combined pulsed-IV measurements and capture and emission time (CET) maps, by investigating a remarkable time window of 9 decades, from 1 μs to 1000 s. After a statistical analysis to demonstrate the repeatability of the experimental results, pulsed IV characterization revealed the existence of a non-monotonic ΔVTH shift, as a function of the (positive) gate stress bias. To gain further insight on the positive threshold shift, CET map analysis has been carried out at different temperatures: the results provide relevant insight on the physical properties of the population of traps responsible for the VTH shift, most likely located at the AlGaN/GaN interface. In addition, the related capture and emission time-constant as a function of temperature are investigated, thus allowing to extract the activation energies for the trapping and de-trapping processes, and to propose a model for the trapping mechanisms.



中文翻译:

捕获和发射时间图以研究 p-GaN 功率 HEMT 中的正 VTH 偏移

在本文中,第一次通过组合脉冲 IV 测量和捕获和发射时间 (CET)研究了 100 V 额定 p-GaN 功率 HEMT 的阈值电压不稳定性,研究了 9 个十年的显着时间窗口,从1 微秒至 1000 秒。在进行统计分析以证明实验结果的可重复性之后,脉冲 IV 表征揭示了作为(正)栅极应力偏差的函数的非单调ΔV TH偏移的存在。为了进一步了解正阈值偏移,已在不同温度下进行了 CET分析:结果提供了有关负责 V TH的陷阱群的物理特性的相关见解位移,最有可能位于 AlGaN/GaN 界面。此外,研究了作为温度函数的相关捕获和发射时间常数,从而可以提取捕获和去捕获过程的活化能,并提出捕获机制的模型。

更新日期:2022-09-26
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