In this paper, for the first time the threshold voltage instability of 100 V rated p-GaN power HEMTs is investigated by combined pulsed-IV measurements and capture and emission time (CET) maps, by investigating a remarkable time window of 9 decades, from 1 μs to 1000 s. After a statistical analysis to demonstrate the repeatability of the experimental results, pulsed IV characterization revealed the existence of a non-monotonic ΔV_TH shift, as a function of the (positive) gate stress bias. To gain further insight on the positive threshold shift, CET map analysis has been carried out at different temperatures: the results provide relevant insight on the physical properties of the population of traps responsible for the V_TH shift, most likely located at the AlGaN/GaN interface. In addition, the related capture and emission time-constant as a function of temperature are investigated, thus allowing to extract the activation energies for the trapping and de-trapping processes, and to propose a model for the trapping mechanisms.

在本文中，第一次通过组合脉冲 IV 测量和捕获和发射时间 (CET)图研究了 100 V 额定 p-GaN 功率 HEMT 的阈值电压不稳定性，研究了 9 个十年的显着时间窗口，从1 微秒至 1000 秒。在进行统计分析以证明实验结果的可重复性之后，脉冲 IV 表征揭示了作为（正）栅极应力偏差的函数的非单调ΔV _TH偏移的存在。为了进一步了解正阈值偏移，已在不同温度下进行了 CET图分析：结果提供了有关负责 V _{TH的陷阱群的物理特性的相关见解}位移，最有可能位于 AlGaN/GaN 界面。此外，研究了作为温度函数的相关捕获和发射时间常数，从而可以提取捕获和去捕获过程的活化能，并提出捕获机制的模型。