Abstract

The influence of the initial composition of a CF₄ + CHF₃ + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF₄/CHF₃ ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF₄/CHF₃ ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness.

中文翻译：

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关于调节 CF4 + CHF3 + Ar 混合物中非均相过程的等离子体组成和动力学的机制

摘要

_{在感应射频条件下，CF 4} + CHF ₃ + Ar 混合物的初始成分和偏置功率对等离子体电参数、气相成分和处理表面上的非均质过程动力学的影响（13.56 MHz）放电进行了研究。发现CF ₄ /CHF _3的变化比率不会导致等离子体的电子和离子成分参数的显着扰动，但会显着改变氟原子和聚合物形成自由基的浓度。相比之下，在混合物的固定初始组成下，偏置功率的增加实际上对活性粒子的浓度没有影响，但其特征在于轰击离子的能量成比例变化。对非均相过程动力学的模型分析表明，CF ₄ /CHF ₃比值对基材的蚀刻速率、氟碳聚合物薄膜的沉积速率及其厚度提供了更广泛的调节范围。