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On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture

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Abstract

The influence of the initial composition of a CF4 + CHF3 + Ar mixture and bias power on the electrical parameters of the plasma, the composition of the gas phase, and the kinetics of heterogeneous processes on the treated surface under conditions of an induction RF (13.56 MHz) discharge is studied. It is found that the variation of the CF4/CHF3 ratio does not lead to significant perturbations of the parameters of the electronic and ionic components of the plasma, but significantly changes the concentrations of fluorine atoms and polymer-forming radicals. In contrast, an increase in the bias power at a fixed initial composition of the mixture has practically no effect on the concentrations of active particles, but is characterized by a proportional change in the energy of the bombarding ions. The model analysis of the kinetics of heterogeneous processes shows that the CF4/CHF3 ratio provides wider ranges of regulation of the etching rate of the base material, as well as the deposition rate of the fluorocarbon polymer film and its thickness.

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Funding

The work was supported within the framework of the state task of the Federal State Institution, Federal Scientific Cente, Research Institute of Civil Engineering, Russian Academy of Sciences (Conducting fundamental scientific research (47 GP)) on research topic no. 11021060909091-4-1.2.1 “Fundamental and applied research in the field of lithographic limits of semiconductor technologies and physicochemical processes of etching 3D nanometer dielectric structures for the development of critical technologies for the production of electronic components. Research and construction of models and designs of microelectronic elements in an extended temperature range (from –60 to +300°С) (FNEF-2022-0006).”

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Authors and Affiliations

  1. Ivanovo State University of Chemistry and Technology, 153000, Ivanovo, Russia

    A. M. Efremov

  2. Scientific Research Institute for System Analysis, Russian Academy of Sciences, Moscow, Russia

    V. B. Betelin

  3. Korea University, 339-700, Sejong, South Korea

    K.-H. Kwon

Authors
  1. A. M. Efremov
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  2. V. B. Betelin
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  3. K.-H. Kwon
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Correspondence to A. M. Efremov.

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Efremov, A.M., Betelin, V.B. & Kwon, KH. On the Mechanisms Regulating the Plasma Composition and Kinetics of Heterogeneous Processes in a CF4 + CHF3 + Ar Mixture. Russ Microelectron 51, 302–310 (2022). https://doi.org/10.1134/S1063739722050055

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