Abstract

In this paper, comprehensive studies of the thermophysical properties of the SiGe semiconductor material are carried out in the general temperature range from 200 to 1200°C. The phase transition temperatures are determined by differential scanning calorimetry. The temperature dependences of the heat capacity and the temperature coefficient of linear expansion are given. The density of the studied samples is measured by hydrostatic weighing and gas pycnometry. A comparative analysis of the obtained measurement results is carried out and the methodological features of the experiments are shown.

中文翻译：

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SiGe半导体材料的热物理性质研究

摘要

本文在200～1200℃的一般温度范围内对SiGe半导体材料的热物理性质进行了综合研究。相变温度通过差示扫描量热法测定。给出了热容量和线性膨胀温度系数的温度依赖性。所研究样品的密度是通过静水称重和气体比重计来测量的。对获得的测量结果进行了比较分析，并显示了实验的方法学特征。