Skip to main content
SpringerLink
Log in

Investigation of the Thermophysical Properties of the SiGe Semiconductor Material

  • Published:
Russian Microelectronics Aims and scope Submit manuscript

Abstract

In this paper, comprehensive studies of the thermophysical properties of the SiGe semiconductor material are carried out in the general temperature range from 200 to 1200°C. The phase transition temperatures are determined by differential scanning calorimetry. The temperature dependences of the heat capacity and the temperature coefficient of linear expansion are given. The density of the studied samples is measured by hydrostatic weighing and gas pycnometry. A comparative analysis of the obtained measurement results is carried out and the methodological features of the experiments are shown.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. Kablov, E.N., Materials as a basis of any business, Delov. Slava Ross., 2013, no. 2, pp. 4–9.

  2. Kablov, E.N., Quality control of materials is a guarantee of the safety of aviation equipment operation, Aviats. Mater. Tekhnol., 2001, no. 1, pp. 3–8.

  3. Introducing a Brain—Inspired Computer. www.research.ibm.com/articles/brain-chip.shtml. Accessed February 14, 2022.

  4. Garbin, D., Vianello, E., Bichler, O., Rafhay, Q., Gamrat, C., Ghibaudo, G., Desalvo, B., and Perniola, L., HfO2-based OxRAM devices as synapses for convolutional neural networks, IEEE Trans. Electron Dev., 2015, vol. 62, pp. 2494–2501. https://doi.org/10.1109/TED.2015.2440102

    Article  Google Scholar 

  5. Frascaroli, J., Brivio, S., Lupi, F., Seguini, G., Boarino, L., Perego, M., and Spiga, S., Resistive switching in high-density nanodevices fabricated by block copolymer self-assembly, ACS Nano, 2015, vol. 9, pp. 2518–2529. https://doi.org/10.1021/nn505131b

    Article  Google Scholar 

  6. Chang, T., Yang, Y., and Lu, W., Building neuromorphic circuits with memristive devices, IEEE Circuits Syst. Mag., 2013, vol. 13, pp. 56–73. https://doi.org/10.1109/MCAS.2013.2256260

    Article  Google Scholar 

  7. Belov, A.N., Perevalov, A.A., and Shevyakov, V.I., Physics-technological fabrication of memresistors for microand nanoelectronics. Review, Izv. Vyssh. Uchebn. Zaved., Elektron., 2017, vol. 22, no. 4, pp. 305–321. https://doi.org/10.24151/1561-5405-2017-22-4-305-321

    Article  Google Scholar 

  8. Wong, H.S.P., Lee, H.Y., Yu, S., Chen, Y.S., Wu, Y., Chen, P.S., Lee, B., Chen, F.T., and Tsai, M.J., Metal-oxide RRAM, Proc. IEEE, 2012, vol. 100, no. 6, pp. 1951–1970. https://doi.org/10.1109/JPROC.2012.2190369

    Article  Google Scholar 

  9. Jeong, D.S., Schroeder, H., Breuer, U., and Waser, R., Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere, J. Appl. Phys., 2008, vol. 104, p. 123716. https://doi.org/10.1063/1.3043879

    Article  Google Scholar 

  10. Kund, M., Beitel, G., Pinnow, C., Rohr, T., Schumann, J., Symanczyk, R., Ufert, K., and Muller, G., Conductive bridging RAM (CBRAM) an emerging non-volatile memory technology scalable to sub 20 nm, in Proceedings of the IEEE International Electron Devices Meeting, 2005, pp. 754–757.https://doi.org/10.1109/IEDM.2005.1609463

  11. Yang, J.J., Miao, F., Pickett, M.D., Ohlberg, D., Stewart, D., Lau, C., and Williams, R., The mechanism of electroforming of metal oxide memristive switches, Nanotecnology, 2009, vol. 20, p. 215201.https://doi.org/10.1088/0957-4484/20/21/215201

    Article  Google Scholar 

  12. Qureshi, M.K., Srinivasan, V., and Rivers, J.A., Scalable high performance main memory system using phase-change memory technology, in Proceedings of the ISCA’09, Austin, Texas, USA, 2009, pp. 24–33. https://doi.org/10.1145/1555754.1555760

  13. Valentinova, M., SiGe-technology—the process has begun, Elektron. NTB, 1998, no. 5, pp. 25–28.

  14. Inglizyan, P.N., Mikheyev, V.K., Novinkov, V.V., and Shchedrov, E.R., On the thermoelectric properties and band gap of silicon-germanium alloys in the high-temperature region, Semiconductors, 2016, vol. 50, no. 4, pp. 447–448.

    Article  Google Scholar 

  15. Choi, S., Tan, S., Li, Z., Kim, Y., Choi, C., Chen, P., Yeon, H., Yu, S., and Kim, J., SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations, Nat. Mater., 2018, vol. 17, pp. 335–340. https://doi.org/10.1038/s41563-017-0001-5

    Article  Google Scholar 

  16. Eremenko, V. and Rabier, J., Atomic features of the dislocation mechanism of plastic deformation of silicon, in Tezisy dokladov XII Konferentsii po aktual’nym problemam fiziki, materialovedeniya, tekhnologii i diagnostiki kremniya, nanometrovykh struktur i priborov na ego osnove “Kremnii-2018” (Proceedings of the 12th Conference on Topical Problems of Physics, Materials Science, Technology and Diagnostics of Silicon, Nanometer Structures and Devices Based on it Silicon-2018), Straumal, B.B., Ed., Chernogolovka, 2018, p. 16.

  17. Kuznetsov, B.Yu., Sorokin, O.Yu., Vaganova, M.L., and Osin, I.V., Synthesis of model high-temperature ceramic matrices by the method of spark plasma sintering and the study of their properties for the production of composite materials, Aviats. Mater. Tekhnol., 2018, no. 4, pp. 37–44. https://doi.org/10.18577/2071-9140-2018-0-4-37-44

  18. Vaganova, M.L., Sorokin, O.Yu., and Osin, I.V., Joining of ceramic materials by the method of spark plasma sintering, Aviats. Mater. Tekhnol., 2017, no. S, pp. 306–317. https://doi.org/10.18577/2071-9140-2017-0-S-306-317

  19. Zabelin, D.A., Chainikova, A.S., Kachaev, A.A., Osin, I.V., and Grashchenkov, D.V., Synthesis, structure and properties of ceramics based on aluminium oxynitride (AlON), obtained by the method of spark plasma sintering, Tr. VIAM, 2019, no. 6, p. 02. https://doi.org/10.18577/2307-6046-2019-0-6-13-19

  20. Kablov, E.N., Innovative developments of FSUE ‘VIAM’ SSC of RF on realization of “Strategic directions of the development of materials and technologies of their processing for the period until 2030,” Aviats. Mater. Tekhnol., 2015, no. 1 (34), pp. 3–33. https://doi.org/10.18577/2071-9140-2015-0-1-3-33

Download references

Funding

This study was supported by the Russian Foundation for Basic Research, grant no. 19-29-03055-mk.

This study was performed using the equipment of the Center for Collective Use “Climatic Testing” of the All-Russian Scientific Research Institute of Aviation Materials, National Research Center “Kurchatov Institute.”

This study was carried out as part of the implementation of the complex scientific direction 2.2. “Qualification and research of materials” (“Strategic directions for the development of materials and technologies for their processing for the period up to 2030”) [20].

Author information

Authors and Affiliations

  1. All-Russian Scientific Research Institute of Aviation Materials, National Research Center “Kurchatov Institute”, 105005, Moscow, Russia

    S. Yu. Shorstov, P. S. Marakhovsky, D. Ya. Barinov & M. G. Razmakhov

Authors
  1. S. Yu. Shorstov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. S. Marakhovsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. Ya. Barinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. G. Razmakhov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to S. Yu. Shorstov.

Ethics declarations

The authors declare that they have no conflicts of interest.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Shorstov, S.Y., Marakhovsky, P.S., Barinov, D.Y. et al. Investigation of the Thermophysical Properties of the SiGe Semiconductor Material. Russ Microelectron 51, 295–301 (2022). https://doi.org/10.1134/S1063739722050092

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063739722050092

Keywords:

Search

Navigation