Abstract

The mechanisms of physical processes at the metal/La_1–xSr_xMnO₃ manganite interfaces that determine the memristive properties of structures based on them were investigated experimentally and by numerical modeling. The transport properties of percolation channels of memristive structures based on epitaxial La_1–xSr_xMnO_3–δ films were studied. It is shown that resistive switching in the studied structures is controlled by two processes. These are a change in the resistive state of the normal metal–oxide interface under the action of alternating voltage and electro diffusion of oxygen to vacancies, while the level of doping (oxygen) of the conducting channel changes, the electric field potential is redistributed, as a result, the resistive properties of the heterocontact change. The calculations showed that each successive transition of the heterostructure from the OFF to the ON state significantly depends not only on the switching voltage but also on the size and location of the gap structure that has been preserved from the previous switching from ON to OFF.

中文翻译：

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锰酸盐基平面结构的忆阻特性

摘要

_{金属/La 1- x} Sr _x MnO ₃亚锰酸盐界面的物理过程机制确定了基于它们的结构的忆阻特性，并通过实验和数值建模进行了研究。基于外延La _{1– x} Sr _x MnO _{3–δ的忆阻结构渗流通道的传输特性}研究了电影。结果表明，所研究结构中的电阻切换受两个过程控制。这些是在交流电压和氧向空位的电扩散作用下，正常金属-氧化物界面的电阻状态发生变化，而导电沟道的掺杂（氧）水平发生变化，电场电位重新分布，结果，异质接触的电阻特性发生了变化。计算表明，异质结构从关闭状态到开启状态的每次连续转变不仅取决于开关电压，还取决于从之前从开启状态切换到关闭状态时保留的间隙结构的大小和位置。