In this paper, we present the results of non-contact measurements of electron density in an inductively coupled chemically active plasma at a pressure of 0.5 Torr. As a plasma-forming gas volatile compounds of halides BF₃, SiF₄, GeF₄ mixed with hydrogen and argon were used. The electron density was determined by direct registration of the phase shift of the probing microwave radiation with a frequency of 58 GHz when passing through a cylindrical plasma layer. The method used makes it possible to increase the accuracy of measurements and level out the effects associated with the scattering and absorption of the useful signal by the plasma. It was experimentally shown that changing the content of argon and hydrogen in the ternary gas mixture (halogenide-hydrogen-argon) affects the electron density value in the discharge. Conclusions were drawn about the role of electron attachment to electronegative atoms and radicals as a mechanism for the loss of electrons in the studied low-pressure discharge in the presence of volatile fluorides.

在本文中，我们展示了在 0.5 托压力下感应耦合化学活性等离子体中电子密度的非接触测量结果。作为形成等离子气体的挥发性卤化物 BF ₃、SiF ₄、GeF ₄使用与氢气和氩气混合。当通过圆柱形等离子体层时，通过直接记录频率为 58 GHz 的探测微波辐射的相移来确定电子密度。所使用的方法可以提高测量的准确性，并消除与等离子体对有用信号的散射和吸收相关的影响。实验表明，改变三元气体混合物（卤化物-氢-氩）中氩和氢的含量会影响放电中的电子密度值。得出的结论是，电子附着在电负性原子和自由基上的作用是在挥发性氟化物存在的情况下研究的低压放电中电子损失的一种机制。