Abstract

An experimental study is conducted of the influence of the etching time and external parameters of the discharge (bias potential, input power, gas pressure) on the etching rate of silicon in a CF₄/Ar mixture. It is shown that the silicon etching process proceeds in the stationary mode. It is found that when a bias potential (–100 or –160 V) is applied to the substrate holder, the silicon etching rate increases significantly.

中文翻译：

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用氩在四氟甲烷中对硅进行等离子体化学和反应离子蚀刻

摘要

实验研究了蚀刻时间和放电外部参数（偏置电位、输入功率、气压）对CF ₄ /Ar混合物中硅蚀刻速率的影响。结果表明，硅蚀刻过程以静止模式进行。发现当偏置电位（–100 或 –160 V）施加到衬底支架上时，硅蚀刻速率显着增加。