Abstract
An experimental study is conducted of the influence of the etching time and external parameters of the discharge (bias potential, input power, gas pressure) on the etching rate of silicon in a CF4/Ar mixture. It is shown that the silicon etching process proceeds in the stationary mode. It is found that when a bias potential (–100 or –160 V) is applied to the substrate holder, the silicon etching rate increases significantly.
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Funding
This study was carried out as part of a state task for the implementation of research; subject no. FZZW-2020-0007. The study was carried out using the resources of the Center for Shared Use of Scientific Equipment of the ISUCT (with the support of the Ministry of Science and Higher Education of Russia, grant no. 075-15-2021-671).
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Murin, D.B., Pivovarenok, S.A. & Kozin, A.S. Plasma-Chemical and Reactive-Ion Etching of Silicon in Tetrafluoromethane with Argon. Russ Microelectron 51, 243–246 (2022). https://doi.org/10.1134/S106373972203009X
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DOI: https://doi.org/10.1134/S106373972203009X