Abstract

A theoretical model that describes the degradation of the resistive states of the memristor over time has been proposing. It has been showing that the current through the memristor cell is limiting by tunneling through the barrier at the nonstoichiometric oxide/metal interfaces. Degradation of the resistive state is generated by diffusive dissolution of the conductive channel. It leads to a change in the space charge region of the metal/dielectric interface. The impact of the filament cross-section, the width of the rupture region, and vacancy concentration in this area on the degradation of HRS and LRS states were investigated. The model explains various kinds of memristor degradation observed in the experimental works of different authors. The connection between the type of degradation and the filament parameters/environment of the dielectric has been demonstrating.

中文翻译：

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影响灯丝型忆阻器保持时间的因素分析

摘要

已经提出了一种描述忆阻器的电阻状态随时间退化的理论模型。已经表明，通过忆阻器单元的电流受到通过非化学计量氧化物/金属界面处的势垒隧穿的限制。电阻状态的退化是由导电通道的扩散溶解产生的。它导致金属/电介质界面的空间电荷区域发生变化。研究了长丝截面、断裂区域的宽度和该区域的空位浓度对 HRS 和 LRS 状态退化的影响。该模型解释了在不同作者的实验工作中观察到的各种忆阻器退化。