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Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors

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Abstract

A theoretical model that describes the degradation of the resistive states of the memristor over time has been proposing. It has been showing that the current through the memristor cell is limiting by tunneling through the barrier at the nonstoichiometric oxide/metal interfaces. Degradation of the resistive state is generated by diffusive dissolution of the conductive channel. It leads to a change in the space charge region of the metal/dielectric interface. The impact of the filament cross-section, the width of the rupture region, and vacancy concentration in this area on the degradation of HRS and LRS states were investigated. The model explains various kinds of memristor degradation observed in the experimental works of different authors. The connection between the type of degradation and the filament parameters/environment of the dielectric has been demonstrating.

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Funding

This study was supported by the Program no. FFNN-2022-0019 of the Ministry of Science and Higher Education of Russia for Valiev Institute of Physics.

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  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    A. V. Fadeev & K. V. Rudenko

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  1. A. V. Fadeev
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Correspondence to A. V. Fadeev or K. V. Rudenko.

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Fadeev, A.V., Rudenko, K.V. Analysis of the Effects Influencing the Retention Time of Filament-Based Memristors. Russ Microelectron 51, 264–272 (2022). https://doi.org/10.1134/S1063739722040059

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