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RF micro-electro-mechanical system (MEMS) capacitive switch performance parameters and improvement strategies
Microsystem Technologies ( IF 1.6 ) Pub Date : 2022-06-25 , DOI: 10.1007/s00542-022-05324-6
Kurmendra , Rajesh Kumar

In this review article, the important switch performance parameters such as actuation voltage, capacitance ratio, radio frequency-scattering parameters (RF S-parameters), the effect of air gap variation and switching time are covered along with their improvement strategies and methods. The available methods in literatures suggest that reduced spring constant of a beam, employing Push- Pull structure and use of two movable plate structure (TMPS) can improve actuation voltage requirement to a great extent. The capacitance ratio improvement strategy involves use of special structure like floating metal electrode, effective capacitive area, use of metal–insulator metal (MIM) capacitor, high-k dielectrics like lithium titanium oxide (LTO), aluminium nitride (AlN), however, high-k dielectrics may result in stiction problem. The benchmark capacitance models are also reviewed which helps in proper estimation of capacitance in a MEMS capacitive switch. The RF performance in MEMS switch is computed by using scattering parameters of coplanar waveguide line. The important tools and methods which have been extensively used for RF performance computation are also discussed. The effect of air height reduction on performance of the switch is explained by two methods: direct reduction and reduction using thick dielectric layer. Direct reduction method is recommended because thicker dielectric layer causes more dielectric charging and creates stiction. The switching time and release time in a MEMS switch is characterised by the choice of material and its properties, the dimension and design opted for switch, air gap height and dielectric material properties.



中文翻译:

射频微机电系统(MEMS)电容开关性能参数及改进策略

在这篇综述文章中,介绍了重要的开关性能参数,如驱动电压、电容比、射频散射参数(RF S 参数)、气隙变化的影响和开关时间以及它们的改进策略和方法。文献中可用的方法表明,降低梁的弹簧常数,采用推拉结构和使用两个可移动板结构(TMPS)可以在很大程度上提高驱动电压要求。电容比改进策略涉及使用浮动金属电极等特殊结构、有效电容面积、使用金属-绝缘体金属 (MIM) 电容器、钛酸锂 (LTO)、氮化铝 (AlN) 等高 k 电介质,但是,高 k 电介质可能会导致粘滞问题。还回顾了基准电容模型,这有助于正确估计 MEMS 电容开关中的电容。MEMS开关中的RF性能是通过使用共面波导线的散射参数来计算的。还讨论了广泛用于射频性能计算的重要工具和方法。空气高度降低对开关性能的影响通过两种方法解释:直接降低和使用厚介电层降低。建议使用直接还原方法,因为较厚的介电层会导致更多的介电充电并产生静摩擦。MEMS 开关中的开关时间和释放时间的特征在于材料及其特性的选择、开关的尺寸和设计、气隙高度和介电材料特性。

更新日期:2022-06-27
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