当前位置: X-MOL 学术Plasma Chem. Plasma Proc. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Fabrication of Silicon Carbide Nanocrystals by Electrical Discharge and Laser-Induced Processes in Solution
Plasma Chemistry and Plasma Processing ( IF 2.6 ) Pub Date : 2022-06-21 , DOI: 10.1007/s11090-022-10266-y
Alena Nevar , Natalie Tarasenka , Mikhail Nedelko , Supriya Chakrabarti , Tamilselvan Velusamy , Davide Mariotti , Nikolai Tarasenko

The capabilities of the liquid assisted electrical discharge technique with additional laser irradiation of colloids for the synthesis of SiC nanocrystals (NCs) have been studied. For optimization of the conditions for the binary NCs formation, the characterization of inner structure, phase composition and morphology was performed by means of high resolution transmission electron microscopy, selected area electron diffraction, X-Ray photoelectron spectroscopy, Raman and Fourier-transform infrared spectroscopy. The results of the characterization proved the formation of near-spherical SiC NCs having two-peak size distribution with average diameter of 3.7 and 11.4 nm before and 2.3 nm after additional laser treatment. The possible mechanism of nanostructured SiC formation has been discussed. The developed technique is expected to be effective for fabrication of SiC NCs as a promising material for optoelectronic devices.



中文翻译:

在溶液中通过放电和激光诱导工艺制备碳化硅纳米晶体

已经研究了液体辅助放电技术与胶体的额外激光照射用于合成 SiC 纳米晶体 (NCs) 的能力。为了优化二元NCs的形成条件,通过高分辨率透射电子显微镜、选区电子衍射、X射线光电子能谱、拉曼和傅里叶变换红外光谱对内部结构、相组成和形态进行了表征. 表征结果证明了近球形 SiC NCs 的形成具有两个峰值尺寸分布,在附加激光处理之前和 2.3 nm 的平均直径分别为 3.7 和 11.4 nm。讨论了纳米结构 SiC 形成的可能机制。

更新日期:2022-06-22
down
wechat
bug