This work presents a variable RF MEMS capacitor based on five cantilever shunt switches for the first time. Conceptually, the proposed varactor design comprises five identical cantilever shunt switches, which allow the creation of 32 discrete capacitance values ranging from 0.091 to 6.04 pF. The latter translates to a tuning range of around 67. The overall varactor’s size is 400 μm × 850 μm. As verified by finite element simulations, the proposed beam configuration reduces sensitivity to in-plane residual stresses, which alleviates the pull-in voltage effect. The pull-in voltage and switching time were 24.18 V and 2.39 μs, respectively. It was found that the pull-in voltage of 24.18 V is less affected by the residual stresses. The high capacitance ratio of the varactor is achieved by the new design of a fixed and different capacitor with asymmetric design as the base structure of the varactor. The minimum capacitance (C_min) is minimized by selecting the minimum overlap capacitor area. Moreover, the selection of fixed plate capacitors minimized the stresses. A thin layer of 0.5 μm was deposited on specified regions to avoid contact between the drive electrodes and the beam structure, thus improving the device's reliability. Furthermore, investigated and verified in-plane residual stress (induced by the fabrication process) and stress gradient's effects on spring constant and the beam's displacement profile. It was verified that the beam's behavior is minimally affected by the in-plane residual stresses, attributed to 3.2 GPa. The proposed RF-MEMS varactor provides a good solution for wireless multi-standard communication systems, such as phase shifters and reconfigurable filters as RF MEMS switching and varactors can be fabricated in a small package with low cost, low insertion loss, high linearity, high isolation, and low power consumption.

这项工作首次提出了一种基于五个悬臂分流开关的可变射频 MEMS 电容器。从概念上讲，所提出的变容二极管设计包括五个相同的悬臂并联开关，允许创建 32 个离散电容值，范围从 0.091 到 6.04 pF。后者转换为大约 67 的调谐范围。整个变容二极管的尺寸为 400 μm × 850 μm。正如有限元模拟所验证的那样，所提出的梁配置降低了对面内残余应力的敏感性，从而减轻了吸合电压效应。吸合电压和开关时间分别为 24.18 V 和 2.39 μs。发现 24.18 V 的吸合电压受残余应力的影响较小。变容二极管的高电容比是通过新设计的非对称设计的固定和不同电容器作为变容二极管的基础结构来实现的。最小电容（C_分钟) 通过选择最小重叠电容器面积来最小化。此外，固定板电容器的选择使应力最小化。在特定区域沉积了 0.5 μm 的薄层，以避免驱动电极与梁结构之间的接触，从而提高了器件的可靠性。此外，研究并验证了平面内残余应力（由制造过程引起）和应力梯度对弹簧常数和梁位移分布的影响。经证实，梁的行为受平面内残余应力的影响最小，归因于 3.2 GPa。所提出的 RF-MEMS 变容二极管为无线多标准通信系统提供了一个很好的解决方案，