Two-dimensional (2D) semiconductors could potentially replace silicon in future electronic devices. However, the low carrier mobility in 2D semiconductors at room temperature, caused by strong phonon scattering, remains a critical challenge. Here we show that lattice distortions can reduce electron–phonon scattering in 2D materials and thus improve the charge carrier mobility. We introduce lattice distortions into 2D molybdenum disulfide (MoS₂) using bulged substrates, which create ripples in the 2D material leading to a change in the dielectric constant and a suppressed phonon scattering. A two orders of magnitude enhancement in room-temperature mobility is observed in rippled MoS₂, reaching ∼900 cm² V⁻¹ s⁻¹, which exceeds the predicted phonon-limited mobility of flat MoS₂ of 200–410 cm² V⁻¹ s⁻¹. We show that our approach can be used to create high-performance room-temperature field-effect transistors and thermoelectric devices.

二维 (2D) 半导体可能会在未来的电子设备中取代硅。然而，由强声子散射引起的二维半导体在室温下的低载流子迁移率仍然是一个关键挑战。在这里，我们表明晶格畸变可以减少二维材料中的电子 - 声子散射，从而提高电荷载流子迁移率。我们使用凸起的基板将晶格畸变引入二维二硫化钼 (MoS ₂ )，这会在二维材料中产生波纹，从而导致介电常数发生变化并抑制声子散射。_{在波纹 MoS 2}中观察到室温迁移率提高了两个数量级，达到∼ 900 cm ²  V ^-1  s^-1，这超过了预测的200-410 cm ²  V ^-1  s ^{-1的平坦MoS} ₂的声子限制迁移率。我们表明，我们的方法可用于制造高性能室温场效应晶体管和热电器件。