Russian Microelectronics Pub Date : 2022-04-01 , DOI: 10.1134/s1063739722020020 A. N. Aleshin 1 , O. A. Ruban 1
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Abstract
The experimental data on the measurement of resistance and electrical conductivity in a low-resistance mode of operation of a memristor based on germanium selenide with a self-directed conductive channel in the range of switching frequencies and temperatures are presented. In the frequency experiment, the switching frequency effect is conducted at room temperature in the range of 1 to 10 000 Hz. An experiment to study the effect of temperature on resistance and electrical conductivity is carried out in the temperature range –10–65°C at a switching frequency of 10 Hz. The aim of this study is to determine the activation energy of the formation of a conductive channel. It is shown that in the temperature range 22–65°C electrical conductivity obeys the Arrhenius law with an activation energy of 0.19 eV; at temperatures below room temperature, the electrical conductivity is insensitive to temperature changes. The reasons for the low value of the activation energy are discussed.
中文翻译：
具有自导电流通道的硒化锗忆阻器的温频研究
摘要
给出了基于硒化锗的忆阻器在开关频率和温度范围内具有自导向导电通道的低电阻操作模式下电阻和电导率测量的实验数据。在频率实验中，开关频率效应在室温下进行，频率范围为 1 至 10 000 Hz。在 –10–65°C 的温度范围内，以 10 Hz 的开关频率进行了一项研究温度对电阻和电导率影响的实验。本研究的目的是确定导电通道形成的活化能。结果表明，在 22-65°C 温度范围内，电导率遵循阿伦尼乌斯定律，活化能为 0.19 eV；在低于室温的温度下，电导率对温度变化不敏感。讨论了活化能值低的原因。
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