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Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel

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Abstract

The experimental data on the measurement of resistance and electrical conductivity in a low-resistance mode of operation of a memristor based on germanium selenide with a self-directed conductive channel in the range of switching frequencies and temperatures are presented. In the frequency experiment, the switching frequency effect is conducted at room temperature in the range of 1 to 10 000 Hz. An experiment to study the effect of temperature on resistance and electrical conductivity is carried out in the temperature range –10–65°C at a switching frequency of 10 Hz. The aim of this study is to determine the activation energy of the formation of a conductive channel. It is shown that in the temperature range 22–65°C electrical conductivity obeys the Arrhenius law with an activation energy of 0.19 eV; at temperatures below room temperature, the electrical conductivity is insensitive to temperature changes. The reasons for the low value of the activation energy are discussed.

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Funding

This work was supported by the Russian Foundation for Basic Research, grant no. 19-29-03003 MK.

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Authors and Affiliations

  1. Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia

    A. N. Aleshin & O. A. Ruban

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  1. A. N. Aleshin
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  2. O. A. Ruban
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Correspondence to A. N. Aleshin or O. A. Ruban.

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Aleshin, A.N., Ruban, O.A. Temperature-Frequency Study of Germanium Selenide Memristors with a Self-Directed Current-Conducting Channel. Russ Microelectron 51, 59–67 (2022). https://doi.org/10.1134/S1063739722020020

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  • DOI: https://doi.org/10.1134/S1063739722020020

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