Abstract

The results of the analysis of limitations on the parameters of ion beams during experimental studies to estimate the sensitivity of a VLSI to the influence of heavy charged particles by single event effects (SEEs) are presented. The restrictions on the ion ranges, the bunch structure of the ion beam, the possibilities of changing the linear energy transfer (LET) by changing the angle of incidence of ions, the type of ions, and the use of energy degraders are substantiated.

中文翻译：

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评估微电子器件硬度的方法对离子加速器单事件效应的限制

摘要

给出了在实验研究中分析离子束参数限制的结果，以估计 VLSI 对单事件效应 (SEE) 对重带电粒子影响的敏感性。对离子范围的限制、离子束的束结构、通过改变离子的入射角改变线性能量转移 (LET) 的可能性、离子的类型以及能量降解剂的使用都得到了证实。