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Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators

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Abstract

The results of the analysis of limitations on the parameters of ion beams during experimental studies to estimate the sensitivity of a VLSI to the influence of heavy charged particles by single event effects (SEEs) are presented. The restrictions on the ion ranges, the bunch structure of the ion beam, the possibilities of changing the linear energy transfer (LET) by changing the angle of incidence of ions, the type of ions, and the use of energy degraders are substantiated.

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Authors and Affiliations

  1. SPELS, National Research Nuclear University “MEPhI,”, 115409, Moscow, Russia

    A. I. Chumakov, A. V. Sogoyan & A. V. Yanenko

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  1. A. I. Chumakov
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  2. A. V. Sogoyan
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  3. A. V. Yanenko
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Correspondence to A. I. Chumakov.

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Chumakov, A.I., Sogoyan, A.V. & Yanenko, A.V. Limitations of Methods for Evaluating the Hardness of Microelectronic Devices to Single Event Effects on Ion Accelerators. Russ Microelectron 51, 16–23 (2022). https://doi.org/10.1134/S1063739722010048

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  • DOI: https://doi.org/10.1134/S1063739722010048

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