Abstract

The tensostimulated effect in a heat-treated and doped silicon has been studied. The uniaxial compressing along direction [111] is shown to lead to the decomposition of thermodonors and the appearance of hysteresis in the dependence of the resistivity on the compression value. The tensostimulated effect in a manganese-compensated silicon samples is found to be due to simultaneous changes in the concentration and the mobility of current carriers.

中文翻译：

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取向变形下掺杂和热处理硅中的张量刺激效应

摘要

已经研究了热处理和掺杂硅中的张力刺激效应。显示沿方向[111]的单轴压缩导致热供体的分解以及电阻率对压缩值的依赖性出现滞后现象。发现锰补偿硅样品中的张力刺激效应是由于电流载流子的浓度和迁移率同时发生变化。