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Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

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Abstract

The tensostimulated effect in a heat-treated and doped silicon has been studied. The uniaxial compressing along direction [111] is shown to lead to the decomposition of thermodonors and the appearance of hysteresis in the dependence of the resistivity on the compression value. The tensostimulated effect in a manganese-compensated silicon samples is found to be due to simultaneous changes in the concentration and the mobility of current carriers.

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Authors and Affiliations

  1. Namangan Institute of Engineering and Technology, 160115, Namangan, Uzbekistan

    O. O. Mamatkarimov

  2. Tashkent State Technical University named after Islam Karimov, 100174, Tashkent, Uzbekistan

    O. Khimmatkulov

  3. Chirchik State Pedagogical Institute, 100700, Chirchik, Uzbekistan

    I. G. Tursunov

  4. National University of Uzbekistan, 100174, Tashkent, Uzbekistan

    I. G. Tursunov

Authors
  1. O. O. Mamatkarimov
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  2. O. Khimmatkulov
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  3. I. G. Tursunov
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Correspondence to I. G. Tursunov.

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Translated by Yu. Ryzhkov

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Mamatkarimov, O.O., Khimmatkulov, O. & Tursunov, I.G. Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation. Phys. Solid State 63, 738–741 (2021). https://doi.org/10.1134/S1063783421050127

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  • DOI: https://doi.org/10.1134/S1063783421050127

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