Abstract

This article is devoted to the issues of numerical simulation of field Hall sensors (FHSs) based on the silicon-on-insulator (SOI) structure with two control gates. To solve the problem, a two-level local-one-dimensional computational model is used. At the first level, a series of one-dimensional Schrödinger–Poisson equations, which describe the distribution of the density of charge carriers across the heterostructure in different sections, are solved. The received information is transferred to the second level, where the current characteristics of the element are calculated. The numerical simulation results are compared with the experimental data obtained for FHSs. Comparative analysis shows close agreement between the calculated and experimental data. The developed computer model makes it possible to quickly carry out a multivariate analysis of various FHS structures, which creates the base for optimizing devices of the class under consideration.

中文翻译：

---

基于纳米绝缘体上硅异质结构的霍尔场元件仿真

摘要

本文致力于研究基于具有两个控制门的绝缘体上硅 (SOI) 结构的场霍尔传感器 (FHS) 的数值模拟问题。为了解决这个问题，使用了一个二级局部一维计算模型。在第一级，求解了一系列一维薛定谔-泊松方程，这些方程描述了电荷载流子在不同部分的异质结构中的密度分布。接收到的信息被传送到第二级，在第二级计算元素的当前特性。数值模拟结果与 FHS 获得的实验数据进行了比较。比较分析表明，计算数据和实验数据非常吻合。