Abstract

The schematic design of electronic devices for harsh environments requires SPICE models of electronic components that take into account the influence of ultralow and ultrahigh ambient temperatures. However, the standard SPICE models of components in commercial versions of SPICE-like simulators provide sufficient accuracy in a limited temperature range (–60 to 150°С) and cannot be used for calculating electronic circuits in the range from ultralow to ultrahigh temperatures. This paper presents modified Low-T and High-T SPICE models of field-effect transistors with the MOSFET and JFET structure, intended for calculating electronic circuits in the temperature range from ultralow to ultrahigh (–200 to 300°С) temperatures. All the models are built using a universal approach, which consists of adding additional expressions for the temperature-dependent parameters of the model to the basic SPICE model of the devices. A procedure for extracting the parameters of SPICE models based on the results of measurements or TCAD modeling of the standard set of I–V and CV characteristics in a wide temperature range is developed. The error in describing the static I–V characteristics of MOSFET and JFET transistors does not exceed 10–12% in the temperature range –200 to 300°С.

中文翻译：

---

宽温度范围内的 JFET 和 MOSFET SPICE 模型

摘要

恶劣环境下电子设备的原理图设计需要考虑超低和超高环境温度影响的电子元件SPICE模型。然而，商业版本的类 SPICE 模拟器中的标准 SPICE 组件模型在有限的温度范围内（–60 到 150°С）提供足够的精度，并且不能用于计算从超低温到超高温范围内的电子电路。本文介绍了具有 MOSFET 和 JFET 结构的场效应晶体管的改良 Low-T 和 High-T SPICE 模型，旨在计算超低至超高（–200 至 300°С）温度范围内的电子电路。所有模型都是使用通用方法构建的，它包括将模型的温度相关参数的附加表达式添加到设备的基本 SPICE 模型中。根据测量结果或标准集的 TCAD 建模提取 SPICE 模型参数的过程开发了宽温度范围内的I-V和CV特性。在–200 至 300°С 的温度范围内，描述MOSFET 和 JFET 晶体管的静态I-V特性的误差不超过 10-12%。